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“Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy”. Hens S, van Landuyt J, Bender H, Boullart W, Vanhaelemeersch S, Materials science in semiconductor processing 4, 109 (2001). http://doi.org/10.1016/S1369-8001(00)00147-5
Abstract: The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
DOI: 10.1016/S1369-8001(00)00147-5
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“EFTEM study of plasma etched low-k Si-O-C dielectrics”. Hens S, Bender H, Donaton RA, Maex K, Vanhaelemeersch S, van Landuyt J, Institute of physics conference series
T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND , 415 (2001)
Abstract: Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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