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Author |
Cooper, D.; Denneulin, T.; Bernier, N.; Béché, A.; Rouvière, J.-L. |
![goto web page (via DOI) doi](http://nano.uantwerpen.be/nanorefs/img/doi.gif)
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Title |
Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope |
Type |
A1 Journal article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
2016 |
Publication |
Micron |
Abbreviated Journal |
Micron |
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Volume |
80 |
Issue |
80 |
Pages |
145-165 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The last few years have seen a great deal of progress in the development of transmission electron microscopy based techniques for strain mapping. New techniques have appeared such as dark field electron holography and nanobeam diffraction and better known ones such as geometrical phase analysis have been improved by using aberration corrected ultra-stable modern electron microscopes. In this paper we apply dark field electron holography, the geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images, nanobeam diffraction and precession diffraction, all performed at the state-of-the-art to five different types of semiconductor samples. These include a simple calibration structure comprising 10-nm-thick SiGe layers to benchmark the techniques. A SiGe recessed source and drain device has been examined in order to test their capabilities on 2D structures. Devices that have been strained using a nitride stressor have been examined to test the sensitivity of the different techniques when applied to systems containing low values of deformation. To test the techniques on modern semiconductors, an electrically tested device grown on a SOI wafer has been examined. Finally a GaN/AlN superlattice was tested in order to assess the different methods of measuring deformation on specimens that do not have a perfect crystalline structure. The different deformation mapping techniques have been compared to one another and the strengths and weaknesses of each are discussed. |
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Place of Publication |
Oxford |
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Wos |
000366770100018 |
Publication Date |
2015-09-15 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0968-4328 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.98 |
Times cited |
50 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.98 |
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Call Number |
UA @ lucian @ c:irua:136446 |
Serial |
4401 |
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Permanent link to this record |
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Author |
Rouvière, J.-L.; Béché, A.; Martin, Y.; Denneulin, T.; Cooper, D. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Improved strain precision with high spatial resolution using nanobeam precession electron diffraction |
Type |
A1 Journal article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
2013 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
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Volume |
103 |
Issue |
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Pages |
241913 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
NanoBeam Electron Diffraction is a simple and efficient technique to measure strain in nanostructures. Here, we show that improved results can be obtained by precessing the electron beam while maintaining a few nanometer probe size, i.e., by doing Nanobeam Precession Electron Diffraction (N-PED). The precession of the beam makes the diffraction spots more uniform and numerous, making N-PED more robust and precise. In N-PED, smaller probe size and better precision are achieved by having diffraction disks instead of diffraction dots. Precision in the strain measurement better than 2 × 10−4 is obtained with a probe size approaching 1 nm in diameter. |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
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Wos |
000328706500031 |
Publication Date |
2013-12-14 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-6951; 1077-3118 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.411 |
Times cited |
53 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.411; 2013 IF: 3.515 |
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Call Number |
UA @ lucian @ c:irua:136442 |
Serial |
4502 |
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Permanent link to this record |
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Author |
Jones, E.; Cooper, D.; Rouvière, J.-L.; Béché, A.; Azize, M.; Palacios, T.; Gradecak, S. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Towards rapid nanoscale measurement of strain in III-nitride heterostructures |
Type |
A1 Journal article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
2013 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl Phys Lett |
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Volume |
103 |
Issue |
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Pages |
231904 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
We report the structural and compositional nanoscale characterization of InAlN/GaN nanoribbon-structured high electron mobility transistors (HEMTs) through the use of geometric phase analysis (GPA) and nanobeam electron diffraction (NBED). The strain distribution in the HEMT layer is quantified and compared to the expected strain profile for the nominal structure predicted by finite element analysis (FEA). Using the experimental strain results, the actual structure is determined and used to modify the FEA model. The improved fit of the model demonstrates that GPA and NBED provide a powerful platform for routine and rapid characterization of strain in III-V semiconducting device systems leading to insights into device evolution during processing and future device optimization. |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
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Wos |
000328634900025 |
Publication Date |
2013-12-03 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-6951; 1077-3118 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.411 |
Times cited |
6 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.411; 2013 IF: 3.515 |
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Call Number |
UA @ lucian @ c:irua:136443 |
Serial |
4513 |
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Permanent link to this record |
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Author |
Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy |
Type |
A1 Journal article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
2012 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl Phys Lett |
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Volume |
112 |
Issue |
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Pages |
124505 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
Strain engineering in the conduction channel is a cost effective method of boosting the performance in state-of-the-art semiconductor devices. However, given the small dimensions of these devices, it is difficult to quantitatively measure the strain with the required spatial resolution. Three different transmission electron microscopy techniques, high-angle annular dark field scanning transmission electron microscopy, dark field electron holography, and nanobeam electron diffraction have been applied to measure the strain in simple bulk and SOI calibration specimens. These techniques are then applied to different gate length SiGe SOI pFET devices in order to measure the strain in the conduction channel. For these devices, improved spatial resolution is required, and strain maps with spatial resolutions as good as 1 nm have been achieved. Finally, we discuss the relative advantages and disadvantages of using these three different techniques when used for strain measurement. |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
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Language |
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Wos |
000312829400128 |
Publication Date |
2012-12-19 |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-6951; 1077-3118 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.411 |
Times cited |
14 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.411; 2012 IF: 3.794 |
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Call Number |
UA @ lucian @ c:irua:136433 |
Serial |
4510 |
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Permanent link to this record |
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Author |
Cooper, D.; Le Royer, C.; Béché, A.; Rouvière, J.-L. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy |
Type |
A1 Journal article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
2012 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl Phys Lett |
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Volume |
100 |
Issue |
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Pages |
233121 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The strain in pMOS p-type metal-oxide-semiconductor devicesgrown on silicon-on-insulator substrates has been measured by using the geometrical phase analysis of high angle annular dark field scanning electron microscopy. We show that by using the latest generations of electron microscopes, the strain can now be quantitatively measured with a large field of view, a spatial resolution as low as 1 nm with a sensitivity as good as 0.15%. This technique is extremely flexible, provides both structural and strain information, and can be applied to all types of nanoscale materials both quickly and easily. |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
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Wos |
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Publication Date |
2012-06-08 |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-6951; 1077-3118 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.411 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.411; 2012 IF: 3.794 |
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Call Number |
UA @ lucian @ c:irua:136432 |
Serial |
4509 |
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Permanent link to this record |
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Author |
Cooper, D.; Rouvière, J.-L.; Béché, A.; Kadkhodazadeh, S.; Semenova, E.S.; Dunin-Borkowsk, R. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography |
Type |
A1 Journal article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
2011 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
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Volume |
99 |
Issue |
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Pages |
261911-261913 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAsquantum dotsgrown in InP with a spatial resolution of 1 nm. A strain value of 5.4% ± 0.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations. |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
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Language |
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Wos |
000298638500027 |
Publication Date |
2012-01-03 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-6951; 1077-3118 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.411 |
Times cited |
26 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.411; 2011 IF: 3.844 |
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Call Number |
UA @ lucian @ c:irua:136428 |
Serial |
4507 |
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Permanent link to this record |
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Author |
Cooper, D.; de la Peña, F.; Béché, A.; Rouvière, J.-L.; Servanton, G.; Pantel, R.; Morin, P. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Field mapping with nanometer-scale resolution for the next generation of electronic devices |
Type |
A1 Journal article |
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Year ![sorted by Year field, descending order (down)](img/sort_desc.gif) |
2011 |
Publication |
Nano letters |
Abbreviated Journal |
Nano Lett |
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Volume |
11 |
Issue |
11 |
Pages |
4585-4590 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
In order to improve the performance of todays nanoscaled semiconductor devices, characterization techniques that can provide information about the position and activity of dopant atoms and the strain fields are essential. Here we demonstrate that by using a modern transmission electron microscope it is possible to apply multiple techniques to advanced materials systems in order to provide information about the structure, fields, and composition with nanometer-scale resolution. Off-axis electron holography has been used to map the active dopant potentials in state-of-the-art semiconductor devices with 1 nm resolution. These dopant maps have been compared to electron energy loss spectroscopy maps that show the positions of the dopant atoms. The strain fields in the devices have been measured by both dark field electron holography and nanobeam electron diffraction. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington |
Editor |
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Language |
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Wos |
000296674700014 |
Publication Date |
2011-10-05 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1530-6984 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
12.712 |
Times cited |
12 |
Open Access |
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Notes |
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Approved |
Most recent IF: 12.712; 2011 IF: 13.198 |
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Call Number |
UA @ lucian @ c:irua:136369 |
Serial |
4499 |
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Permanent link to this record |