| Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. |
Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation |
2014 |
Journal of applied physics |
115 |
26 |
UA library record; WoS full record; WoS citing articles |
