Number of records found: 9
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Citations
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Single crystalline GaN grown on porous Si(111) by MOVPE”. Cheng K, Degroote S, Leys M, van Daele B, Germain M, Van Tendeloo G, Borghs G, Physica status solidi: C: conferences and critical reviews 4, 1908 (2007). http://doi.org/10.1002/pssc.200674316
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Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers”. Cheng K, Leys M, Degroote S, van Daele B, Boeykens S, Derluyn J, Germain M, Van Tendeloo G, Engelen J, Borghs G, Journal of electronic materials 35, 592 (2006). http://doi.org/10.1007/s11664-006-0105-1
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Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors”. Van Daele B, Van Tendeloo G, Derluyn J, Shrivastava P, Lorenz A, Leys MR, Germain M;, Applied physics letters 89, Artn 201908 (2006). http://doi.org/10.1063/1.2388889
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The role of Al on Ohmic contact formation on n-type GaN and AlGaN/GaN”. van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys M, Germain M, Applied physics letters 87, 061905 (2005). http://doi.org/10.1063/1.2008361
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Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN”. van Daele B, Van Tendeloo G, Ruythooren W, Derluyn J, Leys MR, Germain M, Springer proceedings in physics 107, 389 (2005)
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Formation of metallic In in InGaN/GaN multiquantum wells”. van Daele B, Van Tendeloo G, Jacobs K, Moerman I, Leys M, Applied physics letters 85, 4379 (2004). http://doi.org/10.1063/1.1815054
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High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AIN interlayers”. Germain M, Leys M, Boeykens S, Degroote S, Wang W, Schreurs D, Ruythooren W, Choi K-H, van Daele B, Van Tendeloo G, Borghs G, Materials Research Society symposium proceedings 798, Y10.22 (2004)
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Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures”. Jacobs K, van Daele B, Leys M, Moerman I, Van Tendeloo G, Journal of crystal growth 248, 498 (2003). http://doi.org/10.1016/S0022-0248(02)01847-X
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Relation between microstructure and 2DEG properties of AlGaN/GaN structures”. van Daele B, Van Tendeloo G, Germain M, Leys M, Bougrioua Z, Moerman I, Physica status solidi: B: basic research 234, 830 (2002). http://doi.org/10.1002/1521-3951(200212)234:3<830::AID-PSSB830>3.0.CO;2-O
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