Number of records found: 9
 | 
Citations
 | 
   web
Optimization of tungsten beta-phase window for spin-orbit-torque magnetic random-access memory”. Sethu KKV, Ghosh S, Couet S, Swerts J, Sorée B, De Boeck J, Kar GS, Garello K, Physical Review Applied 16, 064009 (2021). http://doi.org/10.1103/PHYSREVAPPLIED.16.064009
toggle visibility
Topochemical deintercalation of Li from layered LiNiB : toward 2D MBene”. Bhaskar G, Gvozdetskyi V, Batuk M, Wiaderek KM, Sun Y, Wang R, Zhang C, Carnahan SL, Wu X, Ribeiro RA, Bud'ko SL, Canfield PC, Huang W, Rossini AJ, Wang C-Z, Ho K-M, Hadermann J, Zaikina J V, Journal Of The American Chemical Society 143, 4213 (2021). http://doi.org/10.1021/JACS.0C11397
toggle visibility
Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions”. Devolder T, Bultynck O, Bouquin P, Nguyen VD, Rao S, Wan D, Sorée B, Radu IP, Kar GS, Couet S, Physical Review B 102, 184406 (2020). http://doi.org/10.1103/PHYSREVB.102.184406
toggle visibility
Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles”. Clima S, Garbin D, Opsomer K, Avasarala NS, Devulder W, Shlyakhov I, Keukelier J, Donadio GL, Witters T, Kundu S, Govoreanu B, Goux L, Detavernier C, Afanas'ev V, Kar GS, Pourtois G, Physica Status Solidi-Rapid Research Letters , 1900672 (2020). http://doi.org/10.1002/PSSR.201900672
toggle visibility
Computationally Driven Discovery of a Family of Layered LiNiB Polymorphs”. Gvozdetskyi V, Bhaskar G, Batuk M, Zhao X, Wang R, Carnahan SL, Hanrahan MP, Ribeiro RA, Canfield PC, Rossini AJ, Wang C-Z, Ho K-M, Hadermann J, Zaikina JV, Angewandte Chemie: international edition in English 58, 15855 (2019). http://doi.org/10.1002/anie.201907499
toggle visibility
Material relaxation in chalcogenide OTS SELECTOR materials”. Clima S, Garbin D, Devulder W, Keukelier J, Opsomer K, Goux L, Kar GS, Pourtois G, Microelectronic engineering 215, 110996 (2019). http://doi.org/10.1016/J.MEE.2019.110996
toggle visibility
Evidence of magnetostrictive effects on STT-MRAM performance by atomistic and spin modeling”. Sankaran K, Swerts J, Carpenter R, Couet S, Garello K, Evans RFL, Rao S, Kim W, Kundu S, Crotti D, Kar GS, Pourtois G, 2018 Ieee International Electron Devices Meeting (iedm) (2018)
toggle visibility
Kinetic and thermodynamic heterogeneity : an intrinsic source of variability in Cu-based RRAM memories”. Clima S, Belmonte A, Degraeve R, Fantini A, Goux L, Govoreanu B, Jurczak M, Ota K, Redolfi A, Kar GS, Pourtois G, Journal of computational electronics 16, 1011 (2017). http://doi.org/10.1007/S10825-017-1042-3
toggle visibility
Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems”. Goux L, Fantini A, Govoreanu B, Kar G, Clima S, Chen Y-Y, Degraeve R, Wouters DJ, Pourtois G, Jurczak M, ECS solid state letters 1, 63 (2012). http://doi.org/10.1149/2.003204ssl
toggle visibility