toggle visibility
Search within Results:
Display Options:

Select All    Deselect All
 |   | 
Details
   print
  Record
Author van Landuyt, J.
  Title The evolution of HVEM application in antwerp Type A1 Journal article
  Year (down) 1991 Publication Ultramicroscopy T2 – 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan Abbreviated Journal Ultramicroscopy
  Volume 39 Issue 1-4 Pages 287-298
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)
  Abstract The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies.
  Address
  Corporate Author Thesis
  Publisher Elsevier Place of Publication Amsterdam Editor
  Language Wos A1991GY23100034 Publication Date 2002-10-18
  Series Editor Series Title Abbreviated Series Title
  Series Volume Series Issue Edition
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record
  Impact Factor 2.436 Times cited Open Access
  Notes Approved PHYSICS, APPLIED 47/145 Q2 #
  Call Number UA @ lucian @ c:irua:95973 Serial 3579
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records: