Abstract: In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.

Abstract: A quantitative HPLC method was applied to determine the amounts of C-60 and C-70 present in extracts of soot produced in the electric arc reactor and in flames. The combustion method was found to yield a higher C-70/C-60 ratio (0.67) compared with the evaporation experiment where the C-70/C-60 ratio amounts to 0.27.

Abstract: We have studied tunnelling through Si donors incorporated in the quantum well of double barrier resonant tunnelling devices. In addition to a resonance associated with the ground state of a single donor (1s level), a novel donor-related resonance at a smaller binding energy is observed in high magnetic fields where it becomes dominant over the Is resonance. We attribute this novel feature to a D-minus state of a shallow donor.

Abstract: ErSi2-x films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples and observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained.

Abstract: We optimized the deposition of YBa2(Cu1-xZnx)(3)O-7-delta thin-films using inverted cylindrical magnetron sputtering and report here a detailed structural study, especially in relation to crystal growth, associated surface morphology, Y2O3 precipitation and other secondary phases important for flux pinning. We find that the epitaxial quality of the Zn-substituted YBa2Cu3O7-delta films is decreased compared with high-quality pure YBa2Cu3O7-delta films prepared under identical conditions. The pure films have smoother surfaces, while those of Zn-substituted films contain pinholes and outgrowths. Secondary phases and a-axis grains were observed in the Zn-substituted films. Y2O3 precipitates with typical dimensions of 50-100 Angstrom have been found in both pure and Zn-substituted samples. However, their density of about 10(23) m(-3), observed in the pure films, is significantly reduced in the Zn-substituted films when increasing the Zn concentration up to 4%.

Abstract: Submicron colloidal Ag particles and nano-sized filaments forming a statistical percolation network during ''in situ'' development of double structure tabular microcrystals of AgRr(I) emulsions have been studied by electron energy-loss spectroscopy and zero-loss electron spectroscopic imaging (EELS/ZLESI). Image analysis has shown that random quasi-fractal clusters were formed in the colloid. ZLESI has been applied to characterise the morphology and defect structure of aggregated particles and filaments. Their energy-loss spectra revealed plasmon excitations and interband 4d electron transitions between 4-32 eV energy-loss. To study the cluster structure and its relation to the physical properties, fractal analysis including estimations of cluster fractal dimensions and of density autocorrelation functions has been performed. Mechanisms of fractal aggregation based on known models of diffusion limited aggregation, cluster-cluster aggregation and percolation are discussed.