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“Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures”. Pokatilov EP, Fomin VM, Balaban SN, Gladilin VN, Klimin SN, Devreese JT, Magnus W, Schoenmaker W, Collaert N, van Rossum M, de Meyer K, Journal Of Applied Physics 85, 6625 (1999). http://doi.org/10.1063/1.370171
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 2.068
Times cited: 16
DOI: 10.1063/1.370171
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“Electron microscopy investigation of ternary \gamma-brass-type precipitation in a Ni39.6Mn47.5Ti12.9 alloy”. Seo JW, Schryvers D, Vermeulen W, Richard O, Potapov P, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 79, 1279 (1999). http://doi.org/10.1080/01418619908210361
Abstract: Homogenized Ni39.6Mn47.5T12.9 material was investigated by different electron microscopy techniques. Apart from the martensite precursor distortions typical for B2 phase alloys undergoing a thermoelastic martensitic transformation upon cooling, coherent dodecahedron-shaped precipitates with sizes between 20 and 100 nm and faceted by lozenge shapes of {110}-type planes are observed. Selected-area and microdiffraction patterns reveal an overall unit cell with a size of 3 x 3 x 3 units of the bcc lattice of the matrix and a body-centred symmetry without screw axes. Finally a ternary gamma-brass-type atomic structure of space group 14(3) over bar m is suggested for these precipitates in accordance with the obtained symmetry constraints, the energy-dispersive X-ray measurements and high-resolution transmission electron microscopy images. This is the first time this type of structure is found in an alloy completely consisting of transition-metal elements.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Laboratory Experimental Medicine and Pediatrics (LEMP)
Times cited: 3
DOI: 10.1080/01418619908210361
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“Electron microscopy on nanoparticles: structure of C60 and C70 nanopraticles”. Pauwels B, Van Tendeloo G, Joutsensaari J, Kauppinen EI, (1999)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“EM investigation of precursors and precipitation in a Ni39.6Mn47.5Ti12.9 alloy”. Seo JW, Schryvers D, Vermeulen W, Richard O, Potapov P, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 79, 1279 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 3
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“Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research
T2 –, International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171, 147 (1999). http://doi.org/10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
Abstract: In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 40
DOI: 10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
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“Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research 171, 147 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 40
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“Growth of pure and doped Rb2ZnCl4and K2ZnCl4 single crystals by Czochralski technique”. Stefan M, Nistor SV, Mateescu DC, Abakumov AM, Journal of crystal growth 200, 148 (1999). http://doi.org/10.1016/S0022-0248(98)01247-0
Abstract: High-quality single crystals of Rb2ZnCl4 and K2ZnCl4, pure or doped with Cu, Mn, Cd, Tl, Sn, Pb and In cations, were grown by Czochralski technique in argon atmosphere, using an experimental setup that allows direct visual access to the whole growth zone. Slowly cooled crystals exhibit excellent cleavage properties. Fastly cooled crystals do cleave poorly. As shown by X-ray diffraction studies, such K2ZnCl4 samples exhibit inclusions of the high-temperature Pmcn phase with lattice parameters a = 7.263(2) Angstrom, b = 12.562(2) Angstrom and c = 8.960(4) Angstrom in the P2(1) cn room temperature stable phase. ESR and optical spectroscopy studies revealed the localization and valence state of the cation dopants. (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 13
DOI: 10.1016/S0022-0248(98)01247-0
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“High resolution electron microscopy and electron spin resonance studies on cubic boron nitride crystals made by high-pressure/high-temperature synthesis”. Nistor L, Nistor SV, Dincã, G, van Landuyt J, Schoemaker D, Copaciu V, Georgeoni P, Arnici N, Diamonds an related materials 8, 738 (1999). http://doi.org/10.1016/S0925-9635(98)00282-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 7
DOI: 10.1016/S0925-9635(98)00282-9
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“High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs”. Buschmann V, Rodewald M, Fuess H, Van Tendeloo G, Schäffer C, Journal of applied physics 85, 2119 (1999). http://doi.org/10.1063/1.369512
Abstract: Two CoSi2/Si1-xGex/Si(100) heterostructures, with different Ge content, made by molecular beam epitaxy are characterized by high resolution electron microscopy. In general, the interface between the CoSi2 thin film and the Si1-xGex layer is of a high structural quality and the strained Si1-xGex layer exhibits few defects. For both samples, different interface structures are present, although the dominant interfacial configuration is similar to the unreconstructed interface present at the CoSi2/Si(100) interface. Only occasionally (2x1) reconstructed interface regions are found which are just a few nanometers in length. Phenomena such as Ge segregation and the introduction of defects are also observed in the Si1-xGex layer. We attribute the minimal presence of the reconstructed interface to both the (2x8):Si1-xGex(100) surface reconstruction and the Ge segregation that takes place. (C) 1999 American Institute of Physics. [S0021-8979(99)02104-0].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 6
DOI: 10.1063/1.369512
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“Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays”. Cloetens P, Ludwig W, Baruchel J, van Dyck D, van Landuyt J, Guigay JP, Schlenker M, Applied physics letters 75, 2912 (1999). http://doi.org/10.1063/1.125225
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 3.411
Times cited: 481
DOI: 10.1063/1.125225
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“A homologous series Pb2n+1Nb2n-1O7n-1 studied by electron microscopy”. Leroux C, Badeche T, Nihoul G, Richard O, Van Tendeloo G, European physical journal: applied physics 7, 33 (1999). http://doi.org/10.1051/epjap:1999196
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.684
Times cited: 4
DOI: 10.1051/epjap:1999196
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“Influence of laser and isothermal treatments on microstructural properties of SnO2 films”. Rembeza ES, Richard O, van Landuyt J, Materials research bulletin 34, 1527 (1999). http://doi.org/10.1016/S0025-5408(99)00188-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.446
Times cited: 17
DOI: 10.1016/S0025-5408(99)00188-9
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“Influence of water on the pillaring of montmorillonite with aminopropyltriethoxysilane”. Ahenach J, Cool P, Vansant EF, Lebedev O, van Landuyt J, Physical chemistry, chemical physics 1, 3703 (1999). http://doi.org/10.1039/a901888c
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
Impact Factor: 4.123
Times cited: 10
DOI: 10.1039/a901888c
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“Josephson phenomenology and microstructure of YBaCuO artificial grain boundaries characterized by misalignment of the c-axes”. Tafuri F, Granozio FM, Carillo F, Lombardi F, Di Uccio US, Verbist K, Lebedev O, Van Tendeloo G, Physica: C : superconductivity 327, 63 (1999). http://doi.org/10.1016/S0921-4534(99)00372-X
Abstract: YBa(2)Cu(3)O(7-delta) (YBCO) grain boundaries characterized by a misalignment of the c-axes (45 degrees c-axis tilt or 45 degrees c-axis twist) have been obtained by employing a recently implemented biepitaxial technique. Junctions based on these grain boundaries exhibit good Josephson properties useful for applications. High values of the I(C)R(N) product and a Fraunhofer-like dependence of the critical current on the magnetic field, differently from traditional biepitaxial junctions, have been obtained. The correlation between transport properties and microstructure has been investigated by Transmission Electron Microscopy (TEM), which was also performed on previously measured junctions. The presence of atomically clean basal plane (BP) faced tilt boundaries, among other types of interfaces, has been shown. The possibility of selecting these kinds of boundaries by controlling film growth, and their possible advantages in terms of reproducibility and uniformity of the junction properties an discussed. The possibility of employing these junctions to explore the symmetry of the order parameter is also discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 7
DOI: 10.1016/S0921-4534(99)00372-X
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“The local structure of YBCO based materials by TEM”. Van Tendeloo G, Lebedev OI, Verbist K, Abakumov AM, Shpanchenko RV, Antipov EV, Blank DHA Kluwer Academic, Dordrecht, page 11 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“Martensitic transformations and microstructures in splat-cooled Ni-Al”. Schryvers D, Holland-Moritz D, Materials science and engineering: part A: structural materials: properties, microstructure and processing 273/275, 697 (1999). http://doi.org/10.1016/S0921-5093(99)00399-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 6
DOI: 10.1016/S0921-5093(99)00399-8
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“Microstructure and Josephson phenomenology in 45°, tilt and twist Yba2Cu3o7-\delta artificial grain boundaries”. Tafuri F, Miletto Granozio F, Carillo F, di Chiara A, Verbist K, Van Tendeloo G, Physical review : B : condensed matter and materials physics 59, 11523 (1999). http://doi.org/10.1103/PhysRevB.59.11523
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 52
DOI: 10.1103/PhysRevB.59.11523
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“Microstructure and phase transitions in Pb(Sc0.5Ta0.5)O3”. Lemmens H, Richard O, Van Tendeloo G, Bismayer U, Journal of electron microscopy 48, 843 (1999). http://doi.org/10.1093/oxfordjournals.jmicro.a023756
Abstract: The microstructure and phase transitions in the perovskite-based ferroelectric lead scandium tantalate, Pb(Sc0.5Ta0.5)O-3 have been investigated by transmission electron microscopy. The effects of ordering of Sc and Ta cations are apparent in reciprocal space as well as in direct space images. High-resolution observations allow direct structure imaging of the domain structure. The structure of the low temperature ferroelectric phase is studied by selected area electron diffraction (SAED) and electron microdiffraction. The relaxer behaviour of this paraelectric-ferroelectric transition is displayed by diffuse intensities in the SAED patterns at temperatures around the Curie point.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 7
DOI: 10.1093/oxfordjournals.jmicro.a023756
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“Microstructure and properties of oxygen controlled melt textured NdBaCuO superconductive ceramics”. Monot I, Tancret F, Laffez P, Van Tendeloo G, Desgardin G, Technology 65, 26 (1999). http://doi.org/10.1016/S0921-5107(99)00193-2
Abstract: Nd1+xBa2-xCu3O7-delta (123) bulk superconductors have been synthesised by the oxygen controlled melt growth method. Unlike the YBaCuO system, platinum doping or Nd4Ba2Cu2O10 (422) rich compositions do not refine the peritectic '422' secondary phase, but the latter improves the microstructural quality. Low oxygen partial pressure and high purity precursors are necessary to achieve in a reproducible manner high T-c and J(c) (up to 56 000 A/cm(2) in 0T and 30 000 A/cm(2) under 1.5T). The fishtail effect observed at 77 K is compared with the one observed in the YBCO system, and is discussed in terms of oxygen deficiency, Nd-Ba substitution, defects and vortex lattice. Our TEM observations did not evidence any Nd-Ba substituted clusters in the Nd123 matrix; however, some diffuse streaks, observed in the [100] zone ED pattern, support the fact that the source of the peak effect in this system is mainly due to oxygen disorder and low stability of the orthorhombic phase. (C) 1999 Elsevier Science S.A. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.552
Times cited: 5
DOI: 10.1016/S0921-5107(99)00193-2
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“Microstructure of tough polycrystalline natural diamond”. Chen JH, Van Tendeloo G, Journal of electron microscopy 48, 121 (1999). http://doi.org/10.1093/oxfordjournals.jmicro.a023658
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 9
DOI: 10.1093/oxfordjournals.jmicro.a023658
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“Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE”. Bougrioua Z, Farvacque J-L, Moerman I, Demeester P, Harris JJ, Lee K, Van Tendeloo G, Lebedev O, Trush EJ, Physica status solidi: B: basic research 216, 571 (1999). http://doi.org/10.1002/(SICI)1521-3951(199911)216:1<571::AID-PSSB571>3.0.CO;2-K
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 13
DOI: 10.1002/(SICI)1521-3951(199911)216:1<571::AID-PSSB571>3.0.CO;2-K
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“Morphology and defects in shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, Rooyackers R, Badenes G, Conference series of the Institute of Physics 164, 443 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
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“Multiply twinned C60 and C70 nanoparticles”. Pauwels B, Bernaerts D, Amelinckx S, Van Tendeloo G, Joutsensaari J, Kauppinen EI, Journal of crystal growth 200, 126 (1999). http://doi.org/10.1016/S0022-0248(98)01285-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 17
DOI: 10.1016/S0022-0248(98)01285-8
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“Nanohardness and structure of nitrogen implanted SixAly coatings post-implanted with oxygen”. Jacobs M, Bodart F, Terwagne G, Schryvers D, Poulet A, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms 147, 231 (1999). http://doi.org/10.1016/S0168-583X(98)00535-7
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.109
Times cited: 3
DOI: 10.1016/S0168-583X(98)00535-7
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“Oscillating sliding wear of mono- and multilayer ceramic coatings in air”. Huq MZ, Celis JP, Meneve J, Stals L, Schryvers D, Surface and coatings technology 113, 242 (1999). http://doi.org/10.1016/S0257-8972(99)00009-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.589
Times cited: 10
DOI: 10.1016/S0257-8972(99)00009-2
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“Phase competition between Y2BaCuO5 and Y2O3 precipitates in Y-rich YBCO thin films”. Scotti di Uccio U, Miletto Granozio F, di Chiara A, Tafuri F, Lebedev OI, Verbist K, Van Tendeloo G, Physica: C : superconductivity 321, 162 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 17
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“The phase transition and crystal structures of Ba3RM2O7.5 complex oxides (R=rare-earth elements, M = Al,Ga)”. Abakumov AM, Shpanchenko RV, Lebedev OI, Van Tendeloo G, Amelinckx S, Antipov EV, Acta crystallographica: section A: foundations of crystallography 55, 828 (1999). http://doi.org/10.1107/S0108767399002068
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.725
Times cited: 7
DOI: 10.1107/S0108767399002068
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“A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction”. Verbist K, Lebedev OI, Van Tendeloo G, Tafuri F, Granozio FM, Di Chiara A, Bender H, Applied physics letters 74, 1024 (1999). http://doi.org/10.1063/1.123443
Abstract: A method to correlate microstructure from cross-section transmission electron microscopy (TEM) investigations and transport properties of a single well characterized high-T-c artificial grain boundary junction is reported. A YBa2Cu3O7-delta 45 degrees twist junction exhibiting the typical phenomenology of high T-c Josephson weak links was employed. The TEM sample preparation is based on focused ion beam etching and allows to easily localize the electron transparent area on a microbridge. The reported technique opens clear perspectives in the determination of the microstructural origin of variations in Josephson junction properties, such as the spread in I-c and IcRN values and the presence of different transport regimes in nominally identical junctions. (C) 1999 American Institute of Physics. [S0003-6951(99)03404-X].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 5
DOI: 10.1063/1.123443
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“Preparation of nanocrystalline titania powder via aerosol pyrolysis of titanium tetrabutoxide”. Ahonen PP, Kauppinen EI, Joubert JC, Deschanvres JL, Van Tendeloo G, Journal of materials research 14, 3938 (1999). http://doi.org/10.1557/JMR.1999.0533
Abstract: Nanocrystalline titanium dioxide was prepared via aerosol pyrolysis of titanium alkoxide precursor at 200-580 degrees C in air and in nitrogen atmospheres. Powders were characterized by x-ray diffraction, thermogravimetric analysis, Brunauer-Emmett-Teller analysis, scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, x-ray fluorescence, Raman and infrared spectroscopy, and Berner-type low-pressure impactor. The anatase phase transition was initiated at 500 degrees C in nitrogen and at 580 degrees C in air. Under other conditions amorphous powders were observed and transformed to nanocrystalline TiO2 via thermal postannealing. In air, smooth and spherical particles with 2-4-mu m diameter were formed with an as-expected tendency to convert to rutile in the thermal postannealings. In nitrogen, a fraction of the titanium tetrabutoxide precursor evaporated and formed ultrafine particles via the gas-to-particle conversion. At 500 degrees C thermally stable anatase phase was formed in nitrogen. A specific surface area as high as 280 m(2) g(-1) was observed for an as-prepared powder.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.673
Times cited: 38
DOI: 10.1557/JMR.1999.0533
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“Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE”. Farvacque JL, Bougrioua Z, Moerman I, Van Tendeloo G, Lebedev O, Physica: B : condensed matter
T2 –, 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA 273-4, 140 (1999). http://doi.org/10.1016/S0921-4526(99)00431-7
Abstract: Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 10(18) cm(-3). We show that such a behavior can be theoretically reproduced by assuming that the columnar structure i.e. the dislocation microstructure is responsible for internal electronic barriers. (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.386
Times cited: 5
DOI: 10.1016/S0921-4526(99)00431-7
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