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“Magnetotransport in a pseudomorhic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, van Hove M, Borghs G, Physical review : B : condensed matter and materials physics 52, 12218 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 35
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“Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si \delta-doping layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, Van Hove M, Borghs G, Physical review : B : condensed matter and materials physics 52, 12218 (1995). http://doi.org/10.1103/PhysRevB.52.12218
Abstract: Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 43
DOI: 10.1103/PhysRevB.52.12218
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“Magnetotransport properties of Si-δ-doped InSb layers grown on GaAs”. de Keyser A, Bogaerts R, van Bockstal L, Hoeks W, Herlach F, Karavolas VC, Peeters FM, van de Graaf W, Borghs G, Physica: B : condensed matter 211, 455 (1995). http://doi.org/10.1016/0921-4526(94)01092-F
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.319
Times cited: 2
DOI: 10.1016/0921-4526(94)01092-F
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“Measuring quantum Hall resistors in pulsed magnetic fields”. van der Burgt M, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, Foxon CT, , 750 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Microscopic theory of orientational disorder and lattice instability in solid C70”. Callebaut AK, Michel KH, Physical review : B : condensed matter and materials physics 52, 15279 (1995). http://doi.org/10.1103/PhysRevB.52.15279
Abstract: We have developed a microscopic theory which describes the orientational dynamics of C-70 molecules and its coupling to lattice displacements in the face-centered-cubic phase of C-70 fullerite. The single-molecule orientational density distribution in the disordered phase is calculated. The ferroelastic transition to the rhombohedral phase is investigated. The discontinuity of the orientational order parameter at the phase transition is calculated. It is found that the transition leads to a stretching of the primitive unit cell along a [111] cubic direction. A softening of the elastic constant c(44) at the transition is predicted.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 20
DOI: 10.1103/PhysRevB.52.15279
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“Multisubband electron transport in δ-doped semiconductor systems”. Hai GQ, Studart N, Peeters FM, Physical review : B : condensed matter and materials physics 52, 8363 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 65
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“Multisubband electron-transport in delta-doped semiconductor systems”. Hai, Studart, Peeters FM, Physical review : B : condensed matter and materials physics 52, 8363 (1995). http://doi.org/10.1103/PhysRevB.52.8363
Abstract: The electron transport properties in delta-doped semiconductor systems-are studied. The subband electronic structure of the delta-doped system is obtained by solving the coupled Schrodinger and Poisson equations. The screening of the quasi-two-dimensional electron gas is taken into account for the ionized impurity scattering through the matrix dielectric function within the random-phase approximation. The quantum and transport mobilities are calculated numerically as a function of the total electron density and the width of the doped layer at zero temperature. The intersubband scattering and the effect of empty subbands above the Fermi level on the electron mobilities are investigated. The calculated mobilities are in reasonable agreement with the available experimental results.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 67
DOI: 10.1103/PhysRevB.52.8363
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“Nonlinear Schrödinger equation on a circle”. Smondyrev MA, Vansant P, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 52, 11231 (1995). http://doi.org/10.1103/PhysRevB.52.11231
Abstract: The nonlinear Schrodinger equation is solved on an infinitesimal thin ring or circle. We obtained the exact real wave functions with their corresponding energies for the ground state and the excited states. Critical values of the circle perimeter are found at which the ground state changes its structure and additional higher excited states appear. Also, the complex wave functions that correspond to energy levels with finite angular momentum are studied.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 5
DOI: 10.1103/PhysRevB.52.11231
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“Orientational order and disorder in solid C60 : theory and diffraction experiments”. Michel KH, Lamoen D, David WIF, Acta crystallographica: section A: foundations of crystallography 51, 365 (1995). http://doi.org/10.1107/S0108767394013280
Abstract: Starting from a microscope model of the intermolecular potential, a unified description is presented of the Bragg scattering law in the orientationally disordered and in the ordered phase of solid C-60. The orientational structure factor is expanded in terms of symmetry-adapted surface harmonics. The expansion coefficients are calculated from theory and compared with experiment Their temperature evolution is studied in the disordered phase at the 260 K transitions and in the ordered phase. In the ordered phase, new results from high-resolution neutron powder diffraction are given. In the disordered phase, space group Fm $($) over bar$$ 3m, the reflections have A(1g) symmetry; in the ordered phase, space group Pa $$($) over bar 3, reflections of T-2g symmetry appear and in addition the A(1g) reflections are renormalized. The orientational density distribution is calculated. The effective crystal-field potential is constructed, its temperature evolution in the ordered phase is studied and related to the occurrence of an orientational glass.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.307
Times cited: 14
DOI: 10.1107/S0108767394013280
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“Quantum oscillations in the Hall effect of thin Sc1-xErxAs epitaxial layers burried in GaAs”. Bogaerts R, de Keyser A, Herlach F, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, , 596 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Reply to “Comment on 'Oscillator strength and sum rule for intersubband transitions in a superlattice'””. Peeters FM, Matulis A, Physical review : B : condensed matter and materials physics 51, 7932 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 1
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“Self-consistent g* factor and spin-split Landau levels in strong magnetic fields and at low temperatures”. Xu W, Vasilopoulos P, Das MP, Peeters FM, , 743 (1995)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Spectral properties of classical two-dimensional clusters”. Schweigert VA, Peeters FM, Physical review : B : condensed matter and materials physics 51, 7700 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 237
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“Stability of the superconducting vortex structure around a magnetic dot”. Marmorkos IK, Matulis A, Peeters FM, Physics of low-dimensional structures 10/11, 77 (1995)
Keywords: A3 Journal article; Condensed Matter Theory (CMT)
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“D- states in GaAs/AlxGa1-xAs superlattices in a magnetic field”. Shi JM, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 51, 7714 (1995). http://doi.org/10.1103/PhysRevB.51.7714
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 76
DOI: 10.1103/PhysRevB.51.7714
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“Two-dimensional electrons in lateral magnetic superlattices”. Ibrahim IS, Peeters FM, Physical review : B : condensed matter and materials physics 52, 17321 (1995). http://doi.org/10.1103/PhysRevB.52.17321
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 169
DOI: 10.1103/PhysRevB.52.17321
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“Acoustical polarons and bipolarons in two dimensions”. Farias GA, da Costa WB, Peeters FM, Physical review : B : condensed matter and materials physics 54, 12835 (1996). http://doi.org/10.1103/PhysRevB.54.12835
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 30
DOI: 10.1103/PhysRevB.54.12835
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“Binding of remote and spatial separated D- centers in double barrier resonant tunneling semiconductor devices”. Marmorkos IK, Schweigert VA, Peeters FM, Lok JGS, , 2769 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Charged-impurity correlations in a δ-doped quantum barrier”. Koenraad PM, Shi JM, van de Stadt AFW, Smets A, Perenboom JAAJ, Peeters FM, Devreese JT, Wolter JH, , 2351 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Charged-impurity correlations in Si ?-doped GaAs”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, , 2351 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Composite fermions in tilded magnetic fields and the effect of the confining potential width on the composite fermion effective mass”. Gee PJ, Peeters FM, Singleton J, Uji S, Aoki H, Foxon CTB, Harris JJ, Physical review : B : condensed matter and materials physics 54, R14313 (1996)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 15
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“Destruction of magnetophonon resonance in high magnetic fields from impurity and phonon scattering in heterojunctions”. Xu W, Peeters FM, Devreese JT, Leadley DR, Nicholas RJ, International journal of modern physics: B: condensed matter physics, statistical physics, applied physics 10, 169 (1996). http://doi.org/10.1142/S0217979296000076
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 0.937
Times cited: 11
DOI: 10.1142/S0217979296000076
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“Effects of DX centers on electronic structure of a ?-doped quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, , 2355 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Effects of the DX centers on electronic structure of a δ-doped quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, , 2355 (1996)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering”. Kálna K, Mo×ko M, Peeters FM, Applied physics letters 68, 117 (1996)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.302
Times cited: 10
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“Electronic structure of a Si \delta-doped layer in a GaAs/AlxGa1-xAs/GaAs quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, Physical Review B 54, 7996 (1996). http://doi.org/10.1103/PhysRevB.54.7996
Abstract: We present a theoretical study of the electronic structure of a heavily Si delta-doped layer in a GaAs/AlxGa1-xAs/GaAs quantum barrier. In this class of structures the effect of DX centers on the electronic properties can be tuned by changing the AlxGa1-xAs barrier width and/or the Al concentration, which leads to a lowering of the DX level with respect to the Fermi energy without disturbing the wave functions much. A self-consistent approach is developed in which the effective confinement potential and the Fermi energy of the system, the energies, the wave functions, and the electron densities of the discrete subbands have been obtained as a function of both the material parameters of the samples and the experimental conditions. The effect of DX centers on such structures at nonzero temperature and under an external pressure is investigated for three different models: (1) the DX(nc)(0) model with no correlation effects, (2) the d(+)/DX(0) model, and (3) the d(+)/DX(-) model with inclusion of correlation effects. In the actual calculation, influences of the background accepters, the discontinuity of the effective mass of the electrons at the interfaces of the different materials, band nonparabolicity, and the exchange-correlation energy of the electrons have been taken into account. We have found that (1) introducing a quantum barrier into delta-doped GaAs makes it possible to control the energy gaps between different electronic; subbands; (2) the electron wave functions are mon spread out when the repellent effect of the barriers is increased as compared to those in delta-doped GaAs; (3) increasing the quantum-barrier height and/or the application of hydrostatic pressure are helpful to experimentally observe the effect of the DX centers through a decrease of the total free-electron density; and (4) the correlation effects of the charged impurities are important for the systems under study.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 11
DOI: 10.1103/PhysRevB.54.7996
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“Electrons in a periodic magnetic field”. Ibrahim IS, Peeters FM, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 341 (1996). http://doi.org/10.1016/0039-6028(96)00417-7
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.925
Times cited: 3
DOI: 10.1016/0039-6028(96)00417-7
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“Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields”. Bogaerts R, Herlach F, de Keyser A, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, Physical review : B : condensed matter and materials physics 53, 15951 (1996). http://doi.org/10.1103/PhysRevB.53.15951
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 9
DOI: 10.1103/PhysRevB.53.15951
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“Impurity band and magnetic-field-induced metal-insulator transition in a doped GaAs/AlxGa1-xAs superlattice”. Hilber W, Helm M, Peeters FM, Alavi K, Pathak RN, Physical review : B : condensed matter and materials physics 53, 6919 (1996). http://doi.org/10.1103/PhysRevB.53.6919
Abstract: A combination of infrared spectroscopy and magnetotransport is used to investigate the impurity band and the magnetic-field-induced metal-insulator transition in n-type GaAs/AlxGa1-xAs superlattices. The dropping of the Fermi level from the conduction band into the impurity band upon increasing magnetic field is observed in a sample doped to n=4n(c), where n(c) is the critical density according to the Mott criterion. The metal-insulator transition takes place while the Fermi level is in the impurity band, with no qualitative change from the metallic to the insulating side. Due to the anisotropy of the superlattice band structure, the metal-insulator transition is shifted to higher magnetic field, when the magnetic field is tilted away from the growth axis towards the layer planes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 14
DOI: 10.1103/PhysRevB.53.6919
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“Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs”. de Keyser A, Bogaerts R, Karavolas VC, van Bockstal L, Herlach F, Peeters FM, van de Graaf W, Borghs G, Solid state electronics 40, 395 (1996). http://doi.org/10.1016/0038-1101(96)84617-X
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.504
Times cited: 2
DOI: 10.1016/0038-1101(96)84617-X
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