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Author |
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. |
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Title |
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers |
Type |
A1 Journal article |
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Year |
2009 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
106 |
Issue |
8 |
Pages |
083704,1-083704,9 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We present comprehensive calculations of the low-field hole mobility in Ge p-channel inversion layers with SiO2 insulator using a six-band k·p band-structure model. The cases of relaxed, biaxially, and uniaxially (both tensily and compressively) strained Ge are studied employing an efficient self-consistent methodmaking use of a nonuniform spatial mesh and of the Broyden second methodto solve the coupled envelope-wave function k·p and Poisson equations. The hole mobility is computed using the KuboGreenwood formalism accounting for nonpolar hole-phonon scattering and scattering with interfacial roughness. Different approximations to handle dielectric screening are also investigated. As our main result, we find a large enhancement (up to a factor of 10 with respect to Si) of the mobility in the case of uniaxial compressive stress similarly to the well-known case of Si. Comparison with experimental data shows overall qualitative agreement but with significant deviations due mainly to the unknown morphology of the rough Ge-insulator interface, to additional scattering with surface optical phonon from the high- insulator, to Coulomb scattering interface traps or oxide chargesignored in our calculationsand to different channel structures employed. |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
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Wos  |
000271358100050 |
Publication Date |
2009-10-20 |
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ISSN |
0021-8979; |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.068 |
Times cited |
29 |
Open Access |
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Approved |
Most recent IF: 2.068; 2009 IF: 2.072 |
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Call Number |
UA @ lucian @ c:irua:80137 |
Serial |
2617 |
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Author |
Bhatia, H.; Keshavarz, M.; Martin, C.; Van Gaal, L.; Zhang, Y.; de Coen, B.; Schrenker, N.J.; Valli, D.; Ottesen, M.; Bremholm, M.; Van de Vondel, J.; Bals, S.; Hofkens, J.; Debroye, E. |
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Title |
Achieving High Moisture Tolerance in Pseudohalide Perovskite Nanocrystals for Light-Emitting Diode Application |
Type |
A1 Journal Article |
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Year |
2023 |
Publication |
ACS Applied Optical Materials |
Abbreviated Journal |
ACS Appl. Opt. Mater. |
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Volume |
1 |
Issue |
6 |
Pages |
1184-1191 |
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Keywords |
A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ; |
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Abstract |
The addition of potassium thiocyanate (KSCN) to the FAPbBr3 structure and subsequent post-treatment of nanocrystals (NCs) lead to high quantum confinement, resulting in a photoluminescent quantum yield (PLQY) approaching unity and microsecond decay times. This synergistic approach demonstrated exceptional stability under humid conditions, retaining 70% of the PLQY for over a month, while the untreated NCs degrade within 24 h. Additionally, the devices incorporating the post-treated NCs displayed 1.5% external quantum efficiency (EQE), a 5-fold improvement over untreated devices. These results provide promising opportunities for the use of perovskites in moisture-stable optoelectronics. |
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Publication Date |
2023-06-23 |
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ISSN |
2771-9855 |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
OpenAccess |
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Notes |
Hercules Foundation, HER/11/14 ; European Commission; Ministerio de Ciencia e Innovaci?n, PID2021-128761OA-C22 ; European Regional Development Fund; Vlaamse regering, CASAS2 Meth/15/04 ; Fonds Wetenschappelijk Onderzoek, 1238622N 1514220N 1S45223N G.0B39.15 G.0B49.15 G098319N S002019N ZW15_09-GOH6316 ; Onderzoeksraad, KU Leuven, C14/19/079 db/21/006/bm iBOF-21-085 STG/21/010 ; Junta de Comunidades de Castilla-La Mancha, SBPLY/21/180501/000127 ; H2020 European Research Council, 642196 815128 ; |
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Most recent IF: NA |
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Call Number |
EMAT @ emat @c:irua:201011 |
Serial |
8975 |
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