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“Au particles supported on (110) anatase-TiO2”. Giorgio S, Henry CR, Pauwels B, Van Tendeloo G, Microstructure And Processing 297, 197 (2001). http://doi.org/10.1016/S0921-5093(00)01261-2
Abstract: Au particles were prepared by evaporation in ultra high vacuum at high temperature, on the surfaces of TiO2 micro-spheres with the anatase structure. The morphology and the structural deformation in Au deposits were studied by high resolution transmission electron microscopy and image simulations by the multislice technique. The particles were polyhedral, limited by (100) and (111) faces. Patches with a hexagonal lattice were found around the particles, which was interpreted as thin Au islands on the surface. In these islands the Au lattice was deformed and perfectly accommodated to the (110) surface of TiO2. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 40
DOI: 10.1016/S0921-5093(00)01261-2
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“High resolution electron microscopy for materials”. van Landuyt J Eurem 92, Granada, page 23 (1992).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
Times cited: 7
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“Interaction of a Ti-capped Co thin film with Si3N4”. Li H, Bender H, Conard T, Maex K, Gutakovskii A, van Landuyt J, Froyen L, Applied physics letters 77, 4307 (2000). http://doi.org/10.1063/1.1329329
Abstract: The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 3
DOI: 10.1063/1.1329329
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“Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization”. Romano-Rodriguez A, Perez-Rodriguez A, Serre C, van Landuyt J, et al, Materials science forum
T2 –, International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA 338-3, 309 (2000)
Abstract: In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
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“Structural transformation in fluorinated LaACuGaO5 (A=Ca, Sr) brownmillerites”. Hadermann J, Van Tendeloo G, Abakumov AM, Pavlyuk BP, Rozova MG, Antipov EV, International journal of inorganic materials 2, 493 (2000). http://doi.org/10.1016/S1466-6049(00)00072-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 13
DOI: 10.1016/S1466-6049(00)00072-6
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“Reconstruction of the La0.9Sr0.1MnO3-SrTiO3 interface by quantitative high-resolution electron microscopy”. Geuens P, Lebedev OI, Van Tendeloo G, Solid state communications 116, 643 (2000). http://doi.org/10.1016/S0038-1098(00)00411-7
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.554
Times cited: 2
DOI: 10.1016/S0038-1098(00)00411-7
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“Transmission electron microscopy of NdNiO3 thin films on silicon substrates”. Laffez P, Retoux R, Boullay P, Zaghrioui M, Lacorre P, Van Tendeloo G, European physical journal: applied physics 12, 55 (2000). http://doi.org/10.1051/epjap:2000171
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.684
Times cited: 16
DOI: 10.1051/epjap:2000171
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“Atomic structure of alloys close to phase transitions”. Van Tendeloo G, Schryvers D, Nucleation and growth processes in materials 580, 283 (2000)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Chemical, structural and electrical characterizations in the BIZNVOX family”. Vernochet C, Vannier R-N, Huvé, M, Pirovano C, Nowogrocki G, Mairesse G, Van Tendeloo G, Journal of materials chemistry 10, 2811 (2000). http://doi.org/10.1039/b006157n
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 13
DOI: 10.1039/b006157n
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“TEM and laser-polarized 129Xe NMR characterization of oxidatively purified carbon nanotubes”. Kneller JM, Soto RJ, Surber SE, Colomer JF, Fonseca A, Nagy JB, Van Tendeloo G, Pietrass T, Journal of the American Chemical Society 122, 10591 (2000). http://doi.org/10.1021/ja994441y
Abstract: Multiwall carbon nanotubes are produced by decomposition of acetylene at 600 degreesC on metal catalysts supported on NaY zeolite. The support and the metal are eliminated by dissolving them in aqueous hydrofluoric acid (HF). Two methods were used to eliminate the pyrolitic carbon: oxidation in air at 500 degreesC and oxidation by potassium permanganate in acidic solution at 70 degreesC. The progress and efficacy of the purification methods are verified by TEM. The properties of the purified multiwalled carbon nanotubes are probed using C-13 and Xe-129 NMR spectroscopy under continuous-flow optical-pumping conditions. Xenon is shown to penetrate the interior of the nanotubes. A distribution of inner tube diameters gives rise to chemical shift dispersion. When the temperature is lowered, an increasing fraction of xenon resides inside the nanotubes and is not capable of exchanging with xenon in the interparticle space. In the case of the permanganate-oxidized sample, rapid xenon relaxation is attributed to interaction with residual MnO2 nanoparticles in the interior of the tubes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 13.858
Times cited: 53
DOI: 10.1021/ja994441y
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“Comparative Hall studies in the electron- and hole-doped manganites La0.33Ca0.67MnO3 and La0.70Ca0.30MnO3”. Gordon I, Wagner P, Das A, Vanacken J, Moshchalkov VV, Bruynseraede Y, Schuddinck W, Van Tendeloo G, Ziese M, Borghs G, Physical review : B : condensed matter and materials physics 62, 11633 (2000). http://doi.org/10.1103/PhysRevB.62.11633
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 18
DOI: 10.1103/PhysRevB.62.11633
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“Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer”. Yandouzi M, Toth L, Vasudevan V, Cannaerts M, van Haesendonck C, Schryvers D, Philosophical magazine letters 80, 719 (2000). http://doi.org/10.1080/09500830050192936
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.941
Times cited: 2
DOI: 10.1080/09500830050192936
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“Comparative study of structural properties and photoluminescence in InGaN layers with a high In content”. Vantomme A, Wu MF, Hogg S, van Landuyt J, et al, Internet journal of nitride semiconductor research
T2 –, Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS 5, art. no.-W11.38 (2000)
Abstract: Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Low-energy-deposited Au clusters investigated by high-resolution electron microscopy and molecular dynamics simulations”. Pauwels B, Van Tendeloo G, Bouwen W, Kuhn LT, Lievens P, Lei H, Hou M, Physical review : B : condensed matter and materials physics 62, 10383 (2000). http://doi.org/10.1103/PhysRevB.62.10383
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 88
DOI: 10.1103/PhysRevB.62.10383
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“Structure refinement of L21 Cu-Zn-Al austenite, using dynamical electron diffraction data”. Satto S, Jansen J, Lexcellent C, Schryvers D, Solid state communications 116, 273 (2000). http://doi.org/10.1016/S0038-1098(00)00316-1
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.554
Times cited: 7
DOI: 10.1016/S0038-1098(00)00316-1
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“Nanoscale inhomogeneities in melt-spun Ni-Al”. Potapov PL, Ochin P, Pons J, Schryvers D, Acta materialia 48, 3833 (2000). http://doi.org/10.1016/S1359-6454(00)00188-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
Times cited: 28
DOI: 10.1016/S1359-6454(00)00188-9
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“Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application”. Ferroni M, Carotta MC, Guidi V, Martinelli G, Ronconi F, Richard O, van Dyck D, van Landuyt J, Sensors and actuators : B : chemical 68, 140 (2000). http://doi.org/10.1016/S0925-4005(00)00474-3
Abstract: Pure and Nb-doped TiO2 thick-films were prepared by screen-printing, starting from nanosized powders. Grain growth and crystalline phase modification occurred as consequence of firing at high temperature. It has been shown that niobium addition inhibits grain coarsening and hinders anatase-to-rutile phase transition. These semiconducting films exhibited n-type behavior, while Nb acted as donor-dopant. Gas measurements demonstrated that the films are suitable for CO or NO2 sensing. Microstructural characterization by electron microscopy and differential thermal analysis (DTA) highlights the dependence of gas-sensing behavior on film's properties. (C) 2000 Elsevier Science S.A. All rights reserved.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 5.401
Times cited: 51
DOI: 10.1016/S0925-4005(00)00474-3
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“The ferroelectric phase transition in tridymite type BaAl2O4 studied by electron microscopy”. Abakumov AM, Lebedev OI, Nistor L, Van Tendeloo G, Amelinckx S, Phase transitions 71, 143 (2000). http://doi.org/10.1080/01411590008224545
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.06
Times cited: 21
DOI: 10.1080/01411590008224545
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“Microstructure of CuXMo6S8 Chevrel phase thin films on R-plane sapphire”. Richard O, Van Tendeloo G, Lemée N, le Lannic J, Guilloux-Viry M, Perrin A, Journal of electron microscopy 49, 493 (2000). http://doi.org/10.1093/oxfordjournals.jmicro.a023834
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
DOI: 10.1093/oxfordjournals.jmicro.a023834
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“Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer”. Nistor L, Bender H, Vantomme A, Wu MF, van Landuyt J, O'Donnell KP, Martin R, Jacobs K, Moerman I, Applied physics letters 77, 507 (2000). http://doi.org/10.1063/1.127026
Abstract: We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 44
DOI: 10.1063/1.127026
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“Ferroelastic domains in lead phosphate-arsenate: an AFM, X-ray diffraction, TEM and raman study”. Bismayer U, Mathes D, Oroyo M, Bosbach D, Putnis A, Van Tendeloo G, Güttler B, Phase transitions 71, 243 (2000). http://doi.org/10.1080/01411590008229654
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.06
Times cited: 6
DOI: 10.1080/01411590008229654
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“Synthesis and characterization of new phases: Sr3.75K1.75Bi3O12 and Sr3.1Na2.9Bi3O12”. Pshirkov JS, Kazakov SM, Abakumov AM, Putilin SN, Antipov EV, Bougerol-Chaillout C, Lebedev OI, Van Tendeloo G, Journal of solid state chemistry 152, 492 (2000). http://doi.org/10.1006/jssc.2000.8718
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 2
DOI: 10.1006/jssc.2000.8718
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“Gradient expansion and beyond for stress tensor and tangential pressure deficit through a planar liquid-vapour interface”. Lamoen D, March NH, Physics And Chemistry Of Liquids 38, 495 (2000). http://doi.org/10.1080/00319100008030296
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.145
Times cited: 1
DOI: 10.1080/00319100008030296
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“Defect structure of the low temperature α-cristobalite phase and the cristobalite <->, tridymite transformation in (Si-Ge)O2”. Lemmens H, Czank M, Van Tendeloo G, Amelinckx S, Physics and chemistry of minerals 27, 386 (2000). http://doi.org/10.1007/s002699900082
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.521
Times cited: 5
DOI: 10.1007/s002699900082
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“Microstructural characterization of diamond films deposited on c-BN crystals”. Nistor L, Buschmann V, Ralchenko V, Dinca G, Vlasov I, van Landuyt J, Fuess H, Diamond and related materials
T2 –, 10th European Conference on Diamond, Diamond-Like Materials, Nitrides, and Silicon Carbide (Diamond 1999), SEP 12-17, 1999, PRAGUE, CZECH REPUBLIC 9, 269 (2000). http://doi.org/10.1016/S0925-9635(99)00246-0
Abstract: The morphology and structure of diamond films, deposited on cubic boron nitride (c-BN) crystals by microwave-plasma-enhanced chemical vapor deposition, is studied by high-resolution scanning electron microscopy and micro-Raman spectroscopy. The c-BN crystals, with sizes of 200 to 350 mu m and grown by a high-temperature/high-pressure technique, were embedded in a copper holder, and used as substrates in deposition runs of 15 min to 5 h. The nucleation centers for diamond appear as well-shaped cuboctahedral crystallites, having diameters of approximately 100 nm. With increasing deposition time the diamond crystallites grew larger, forming islands on the c-BN faces. In some cases, epitaxial growth was observed on the (111) c-BN faces where coalesced particles gave rise to very smooth regions. A number of diamond crystals with peculiar shapes are observed, such as a pseudo five-fold symmetry due to multiple twinning. Moreover, both randomly distributed carbon tubes, about 100 nn in diameter and 1 mu m in length, and spherically shaped features are observed in samples prepared under the typical conditions of diamond deposition, this effect being ascribed to the influence of plasma-sputtered copper contamination. Quite unusual diamond crystals with a deep, pyramidal-shaped hole in the middle grew on the copper substrate between the c-BN crystals. (C) 2000 Elsevier Science S.A. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 9
DOI: 10.1016/S0925-9635(99)00246-0
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“The layered manganate Sr4-xBaxMn3O10: synthesis, structural and magnetic properties”. Floros N, Hervieu M, Van Tendeloo G, Michel C, Maignan A, Raveau B, Solid state sciences 2, 1 (2000). http://doi.org/10.1016/S1293-2558(00)00115-1
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.811
Times cited: 29
DOI: 10.1016/S1293-2558(00)00115-1
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“Structural and magnetotransport transitions in the electron-doped Pr1-xSrxMnO3(0.85\leq x\leq1) manganites”. Hervieu M, Martin C, Maignan A, Van Tendeloo G, Jirak Z, Hejtmanek J, Barnabe A, Thopart D, Raveau B, Chemistry and materials 12, 1456 (2000). http://doi.org/10.1021/cm000016o
Abstract: The exploration of the Mn4+-rich side of the Pr1-xSrxMnO3 system has allowed the extension of the domain of the cubic perovskite, by using a two-step process, combining synthesis under Ar flow at high temperature and O-2 pressure annealing at lower temperature. We show that these Pr-doped cubic perovskites exhibit a coupled structural (cubic-tetragonal) and magnetic (para-antiferro) transition connected with a resistivity jump at the same temperature. The strong interplay between lattice, charges, and spins for these oxides results from the appearance at low temperature of the distorted C-type antiferromagnetic structure. The Pr1-xSrxMnO3 magnetic phase diagram shows, for 0.9 less than or equal to x less than or equal to 1 (i.e., on the Mn4+-rich side), the existence at low temperature of C- and G-type antiferromagnetism. The absence of ferromagnetic-antiferromagnetic competition explains that magnetoresistante properties are not observed in this system, in contrast to Mn4+-rich Ln(1-x)Ca(x)MnO(3) systems.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 24
DOI: 10.1021/cm000016o
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“Ferroelastic orientation states and domain walls in lead phosphate type crystals”. Bismayer U, Mathes D, Bosbach D, Putnis A, Van Tendeloo G, Novak J, Salje EKH, Mineralogical magazine 64, 233 (2000). http://doi.org/10.1180/002646100549328
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.285
Times cited: 16
DOI: 10.1180/002646100549328
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“On the Ginzburg-Landau analysis of a mixed s-dx2-y2-wave superconducting mesoscopic square”. Misko VR, Fomin VM, Devreese JT, Moshchalkov VV, Solid State Communications 114, 499 (2000). http://doi.org/10.1016/S0038-1098(00)00090-9
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 1.554
Times cited: 2
DOI: 10.1016/S0038-1098(00)00090-9
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“In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Mironov OA, Parker EHC, Physical review : B : condensed matter and materials physics 61, 10336 (2000). http://doi.org/10.1103/PhysRevB.61.10336
Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.61.10336
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