Abstract: ErSi2-x films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si substrate was deduced for a1 samples and observed phases. Different defect modulated structures are formed; they can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained.

Abstract: Aerosol samples have been collected over the southern bight of the North Sea from an aircraft. In this way, 96 samples were taken for single-particle analysis during 16 flights. Almost 45 000 individual particles were analyzed with electron probe X-ray microanalysis. More than 5000 of these were found to contain significant concentrations of one or more of the heavy metals Cr, Pb, and Zn. With the help of hierarchical, nonhierarchical, and fuzzy clustering techniques, various heavy metal-containing particle types could be identified. Significant differences in abundances were detected in the North Sea heavy metal aerosol, depending on the origin of the air masses. In samples with continental influence 50 times more Zn- and Pb-containing particles were found than in samples with a marine history. For Cr, on the other hand, we found abundances in the marine sector that were one-third of the values for continental sectors. This might point to a rather undefined marine source, which could be the recycling of previously deposited material by reinjection into the atmosphere by sea spray. The highest values for Cr-, Pb-, and Zn-containing particles were always detected under southeastern wind directions.

Abstract: Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.