Abstract: The effects due to intersubband coupling and screening on the ionized impurity scattering are studied for a quasi-two-dimensional electron system in delta-doped semiconductors. We found that intersubband coupling plays an essential role in describing the screening properties and the effect of ionized impurity scattering on the mobility in a multisubband system. At the onset of the occupation of a higher subband, the screening due to the intersubband coupling leads to a reduction of the small angle scattering rate in the lower subband. We showed that such an effect is significant in a delta-doped quantum well and results in a pronounced increase of the quantum mobility at the onset of the occupation of a higher subband. (C) 1996 American Institute of Physics.

Abstract: Submicron colloidal Ag particles and nano-sized filaments forming a statistical percolation network during ''in situ'' development of double structure tabular microcrystals of AgRr(I) emulsions have been studied by electron energy-loss spectroscopy and zero-loss electron spectroscopic imaging (EELS/ZLESI). Image analysis has shown that random quasi-fractal clusters were formed in the colloid. ZLESI has been applied to characterise the morphology and defect structure of aggregated particles and filaments. Their energy-loss spectra revealed plasmon excitations and interband 4d electron transitions between 4-32 eV energy-loss. To study the cluster structure and its relation to the physical properties, fractal analysis including estimations of cluster fractal dimensions and of density autocorrelation functions has been performed. Mechanisms of fractal aggregation based on known models of diffusion limited aggregation, cluster-cluster aggregation and percolation are discussed.

Abstract: mu-XRF is the microscopic equivalent of the well-established multielement analytical technique. In this paper, after comparing the interaction of X-ray photons, electrons and protons with matter and an introduction to synchrotron rings and microfocussing of X-rays, the instrumentation for mu-XRF is discussed, both for laboratory source and synchrotron based setups and the analytical characteristics of mu-XRF are contrasted to that of other microanalytical techniques, Also, this issue of quantification of mu-XRF data is addressed; the applicability of the method in archeological and geological analysis is illustrated.

Abstract: Starting from a model of microscopic interactions between C-70 molecules, we have developed a theory which describes the orientational dynamics and its coupling to lattice displacements in the rhombohedral phase of C-70 fullerite. The Landau free energy is calculated. We obtain a first-order phase transition to a monoclinic structure with the space group P2(1)/m. The transition is driven by the condensation of orientational quadrupoles at the F point of the Brillouin zone of the rhombohedral lattice. We find no evidence that the monoclinic structure is connected with the freezing in of orientations around the fivefold molecular axis. We calculate the lattice strains that are associated with the transition to the monoclinic structure. The theory is compared with a range of experimental data on the phase transition.

Abstract: We present a theoretical study of the electronic structure of a heavily Si delta-doped layer in a GaAs/AlxGa1-xAs/GaAs quantum barrier. In this class of structures the effect of DX centers on the electronic properties can be tuned by changing the AlxGa1-xAs barrier width and/or the Al concentration, which leads to a lowering of the DX level with respect to the Fermi energy without disturbing the wave functions much. A self-consistent approach is developed in which the effective confinement potential and the Fermi energy of the system, the energies, the wave functions, and the electron densities of the discrete subbands have been obtained as a function of both the material parameters of the samples and the experimental conditions. The effect of DX centers on such structures at nonzero temperature and under an external pressure is investigated for three different models: (1) the DX(nc)(0) model with no correlation effects, (2) the d(+)/DX(0) model, and (3) the d(+)/DX(-) model with inclusion of correlation effects. In the actual calculation, influences of the background accepters, the discontinuity of the effective mass of the electrons at the interfaces of the different materials, band nonparabolicity, and the exchange-correlation energy of the electrons have been taken into account. We have found that (1) introducing a quantum barrier into delta-doped GaAs makes it possible to control the energy gaps between different electronic; subbands; (2) the electron wave functions are mon spread out when the repellent effect of the barriers is increased as compared to those in delta-doped GaAs; (3) increasing the quantum-barrier height and/or the application of hydrostatic pressure are helpful to experimentally observe the effect of the DX centers through a decrease of the total free-electron density; and (4) the correlation effects of the charged impurities are important for the systems under study.