“The superconducting proximity effect in epitaxial Al/Pb nanocomposites”. Wang H, Picot T, Houben K, Moorkens T, Grigg J, Van Haesendonck C, Biermans E, Bals S, Brown SA, Vantomme A, Temst K, Van Bael MJ;, Superconductor science and technology 27, 015008 (2014). http://doi.org/10.1088/0953-2048/27/1/015008
Abstract: We have investigated the superconducting properties of Pb nanoparticles with a diameter ranging from 8 to 20 nm, synthesized by Pb+ ion implantation in a crystalline Al matrix. A detailed structural characterization of the nanocomposites reveals the highly epitaxial relation between the Al crystalline matrix and the Pb nanoparticles. The Al/Pb nanocomposites display a single superconducting transition, with the critical temperature T-c increasing with the Pb content. The dependence of T-c on the Pb/Al volume ratio was compared with theoretical models of the superconducting proximity effect based on the bulk properties of Al and Pb. A very good correspondence with the strong-coupling proximity effect model was found, with an electron-phonon coupling constant in the Pb nanoparticles slightly reduced compared to bulk Pb. Our result differs from other studies on Pb nanoparticle based proximity systems where weak-coupling models were found to better describe the T-c dependence. We infer that the high interface quality resulting from the ion implantation synthesis method is a determining factor for the superconducting properties. Critical field and critical current measurements support the high quality of the nanocomposite superconducting films.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.878
Times cited: 2
DOI: 10.1088/0953-2048/27/1/015008
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“Unexpected optical response of single ZnO nanowires probed using controllable electrical contacts”. Zeng YI, Menghini M, Li DY, Lin SS, Ye ZZ, Hadermann J, Moorkens T, Seo JW, Locquet J-P, van Haesendonck C, Physical chemistry, chemical physics 13, 6931 (2011). http://doi.org/10.1039/c1cp00012h
Abstract: Relying on combined electron-beam lithography and lift-off methods Au/Ti bilayer electrical contacts were attached to individual ZnO nanowires (NWs) that were grown by a vapor phase deposition method. Reliable Schottky-type as well as ohmic contacts were obtained depending on whether or not an ion milling process was used. The response of the ZnO NWs to ultraviolet light was found to be sensitive to the type of contacts. The intrinsic electronic properties of the ZnO NWs were studied in a field-effect transistor configuration. The transfer characteristics, including gate threshold voltage, hysteresis and operational mode, were demonstrated to unexpectedly respond to visible light. The origin of this effect could be accounted for by the presence of point defects in the ZnO NWs.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.123
Times cited: 7
DOI: 10.1039/c1cp00012h
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