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“The ferroelectric phase transition in tridymite type BaAl2O4 studied by electron microscopy”. Abakumov AM, Lebedev OI, Nistor L, Van Tendeloo G, Amelinckx S, Phase transitions 71, 143 (2000). http://doi.org/10.1080/01411590008224545
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.06
Times cited: 21
DOI: 10.1080/01411590008224545
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“Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application”. Ferroni M, Carotta MC, Guidi V, Martinelli G, Ronconi F, Richard O, van Dyck D, van Landuyt J, Sensors and actuators : B : chemical 68, 140 (2000). http://doi.org/10.1016/S0925-4005(00)00474-3
Abstract: Pure and Nb-doped TiO2 thick-films were prepared by screen-printing, starting from nanosized powders. Grain growth and crystalline phase modification occurred as consequence of firing at high temperature. It has been shown that niobium addition inhibits grain coarsening and hinders anatase-to-rutile phase transition. These semiconducting films exhibited n-type behavior, while Nb acted as donor-dopant. Gas measurements demonstrated that the films are suitable for CO or NO2 sensing. Microstructural characterization by electron microscopy and differential thermal analysis (DTA) highlights the dependence of gas-sensing behavior on film's properties. (C) 2000 Elsevier Science S.A. All rights reserved.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 5.401
Times cited: 51
DOI: 10.1016/S0925-4005(00)00474-3
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“Nanoscale inhomogeneities in melt-spun Ni-Al”. Potapov PL, Ochin P, Pons J, Schryvers D, Acta materialia 48, 3833 (2000). http://doi.org/10.1016/S1359-6454(00)00188-9
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.301
Times cited: 28
DOI: 10.1016/S1359-6454(00)00188-9
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“Structure refinement of L21 Cu-Zn-Al austenite, using dynamical electron diffraction data”. Satto S, Jansen J, Lexcellent C, Schryvers D, Solid state communications 116, 273 (2000). http://doi.org/10.1016/S0038-1098(00)00316-1
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.554
Times cited: 7
DOI: 10.1016/S0038-1098(00)00316-1
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“Low-energy-deposited Au clusters investigated by high-resolution electron microscopy and molecular dynamics simulations”. Pauwels B, Van Tendeloo G, Bouwen W, Kuhn LT, Lievens P, Lei H, Hou M, Physical review : B : condensed matter and materials physics 62, 10383 (2000). http://doi.org/10.1103/PhysRevB.62.10383
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 88
DOI: 10.1103/PhysRevB.62.10383
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“Comparative study of structural properties and photoluminescence in InGaN layers with a high In content”. Vantomme A, Wu MF, Hogg S, van Landuyt J, et al, Internet journal of nitride semiconductor research
T2 –, Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS 5, art. no.-W11.38 (2000)
Abstract: Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Epitaxial Ni-Al thin films on NaCl using a Ag buffer layer”. Yandouzi M, Toth L, Vasudevan V, Cannaerts M, van Haesendonck C, Schryvers D, Philosophical magazine letters 80, 719 (2000). http://doi.org/10.1080/09500830050192936
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.941
Times cited: 2
DOI: 10.1080/09500830050192936
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“Comparative Hall studies in the electron- and hole-doped manganites La0.33Ca0.67MnO3 and La0.70Ca0.30MnO3”. Gordon I, Wagner P, Das A, Vanacken J, Moshchalkov VV, Bruynseraede Y, Schuddinck W, Van Tendeloo G, Ziese M, Borghs G, Physical review : B : condensed matter and materials physics 62, 11633 (2000). http://doi.org/10.1103/PhysRevB.62.11633
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 18
DOI: 10.1103/PhysRevB.62.11633
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“TEM and laser-polarized 129Xe NMR characterization of oxidatively purified carbon nanotubes”. Kneller JM, Soto RJ, Surber SE, Colomer JF, Fonseca A, Nagy JB, Van Tendeloo G, Pietrass T, Journal of the American Chemical Society 122, 10591 (2000). http://doi.org/10.1021/ja994441y
Abstract: Multiwall carbon nanotubes are produced by decomposition of acetylene at 600 degreesC on metal catalysts supported on NaY zeolite. The support and the metal are eliminated by dissolving them in aqueous hydrofluoric acid (HF). Two methods were used to eliminate the pyrolitic carbon: oxidation in air at 500 degreesC and oxidation by potassium permanganate in acidic solution at 70 degreesC. The progress and efficacy of the purification methods are verified by TEM. The properties of the purified multiwalled carbon nanotubes are probed using C-13 and Xe-129 NMR spectroscopy under continuous-flow optical-pumping conditions. Xenon is shown to penetrate the interior of the nanotubes. A distribution of inner tube diameters gives rise to chemical shift dispersion. When the temperature is lowered, an increasing fraction of xenon resides inside the nanotubes and is not capable of exchanging with xenon in the interparticle space. In the case of the permanganate-oxidized sample, rapid xenon relaxation is attributed to interaction with residual MnO2 nanoparticles in the interior of the tubes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 13.858
Times cited: 53
DOI: 10.1021/ja994441y
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“Chemical, structural and electrical characterizations in the BIZNVOX family”. Vernochet C, Vannier R-N, Huvé, M, Pirovano C, Nowogrocki G, Mairesse G, Van Tendeloo G, Journal of materials chemistry 10, 2811 (2000). http://doi.org/10.1039/b006157n
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 13
DOI: 10.1039/b006157n
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“Atomic structure of alloys close to phase transitions”. Van Tendeloo G, Schryvers D, Nucleation and growth processes in materials 580, 283 (2000)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Transmission electron microscopy of NdNiO3 thin films on silicon substrates”. Laffez P, Retoux R, Boullay P, Zaghrioui M, Lacorre P, Van Tendeloo G, European physical journal: applied physics 12, 55 (2000). http://doi.org/10.1051/epjap:2000171
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.684
Times cited: 16
DOI: 10.1051/epjap:2000171
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“Reconstruction of the La0.9Sr0.1MnO3-SrTiO3 interface by quantitative high-resolution electron microscopy”. Geuens P, Lebedev OI, Van Tendeloo G, Solid state communications 116, 643 (2000). http://doi.org/10.1016/S0038-1098(00)00411-7
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.554
Times cited: 2
DOI: 10.1016/S0038-1098(00)00411-7
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“Structural transformation in fluorinated LaACuGaO5 (A=Ca, Sr) brownmillerites”. Hadermann J, Van Tendeloo G, Abakumov AM, Pavlyuk BP, Rozova MG, Antipov EV, International journal of inorganic materials 2, 493 (2000). http://doi.org/10.1016/S1466-6049(00)00072-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 13
DOI: 10.1016/S1466-6049(00)00072-6
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“Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization”. Romano-Rodriguez A, Perez-Rodriguez A, Serre C, van Landuyt J, et al, Materials science forum
T2 –, International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA 338-3, 309 (2000)
Abstract: In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
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“Interaction of a Ti-capped Co thin film with Si3N4”. Li H, Bender H, Conard T, Maex K, Gutakovskii A, van Landuyt J, Froyen L, Applied physics letters 77, 4307 (2000). http://doi.org/10.1063/1.1329329
Abstract: The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 3
DOI: 10.1063/1.1329329
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“High resolution electron microscopy for materials”. van Landuyt J Eurem 92, Granada, page 23 (1992).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
Times cited: 7
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“Au particles supported on (110) anatase-TiO2”. Giorgio S, Henry CR, Pauwels B, Van Tendeloo G, Microstructure And Processing 297, 197 (2001). http://doi.org/10.1016/S0921-5093(00)01261-2
Abstract: Au particles were prepared by evaporation in ultra high vacuum at high temperature, on the surfaces of TiO2 micro-spheres with the anatase structure. The morphology and the structural deformation in Au deposits were studied by high resolution transmission electron microscopy and image simulations by the multislice technique. The particles were polyhedral, limited by (100) and (111) faces. Patches with a hexagonal lattice were found around the particles, which was interpreted as thin Au islands on the surface. In these islands the Au lattice was deformed and perfectly accommodated to the (110) surface of TiO2. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.094
Times cited: 40
DOI: 10.1016/S0921-5093(00)01261-2
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“Electron microscopy and X-ray structural investigations of incommensurate spin-ladder Sr4.1Ca4.7Bi0.3Cu17O29 single crystals”. Dluzewski P, Pietraszko A, Kozlowski M, Szczepanska A, Gorecka J, Baran M, Leonyuk L, Babonas GJ, Lebedev OI, Szymczak R, Acta physica Polonica: A: general physics, solid state physics, applied physics 98, 729 (2000)
Abstract: Transmission electron microscopy and X-ray diffraction proved chain/ladder incommensurate single crystal structure of investigated samples. The incommensurate ratio was determined from the X-ray and electron diffraction being equal to 0.704. Diffuse scattering intensities localised on the planes perpendicular to the c*-axis and passing through the spots originating from the periodicity of chain sublattice were detected. High-angle grain boundary or twinning formed by rotation of 33.3 degrees around [100] direction was observed. High-resolution electron microscopy images revealed the stacking faults in ac planes.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.469
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“Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation”. Lei CH, Van Tendeloo G, Siegert M, Schubert J, Buchal C, Journal of crystal growth 222, 558 (2001). http://doi.org/10.1016/S0022-0248(00)00943-X
Abstract: Yittria-stabilized zirconia (YSZ) films doped with 3 and 9 vol%. Y(2)O(3), respectively, are epitaxially deposited on (0 0 1) silicon substrates by means of pulsed laser deposition (PLD) technique. Transmission electron microscopy (TEM) and X-ray diffraction are mainly combined to study the film microstructure. It is: found that the film structure strongly depends on the amount of Y(2)O(3) dopant. 99/0 Y(2)O(3)-doped films display a near cubic structure; 45 degrees 1/2(1 1 0) dislocations are the main defects in the film and thermal cracks are formed during cooling. The 3% Y(2)O(3)-doped films are dominated by {1 1 0} twin-related tetragonal domains in which monoclinic phase is found. The films are free of thermal cracks even for films thicker than 2 mum. (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 12
DOI: 10.1016/S0022-0248(00)00943-X
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“On the crystal structure of TiNi-Cu martensite”. Potapov P, Shelyakov A, Schryvers D, Scripta materialia 44, 1 (2001). http://doi.org/10.1016/S1359-6462(00)00555-8
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.747
Times cited: 36
DOI: 10.1016/S1359-6462(00)00555-8
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“Morphology and defects in shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, Rooyackers R, Badenes G, Conference series of the Institute of Physics 164, 443 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
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“Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Institute of physics conference series
T2 –, Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND , 495 (1999)
Abstract: In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Production of short carbon nanotubes with open tips by ball milling”. Pierard N, Fonseca A, Konya Z, Willems I, Van Tendeloo G, Nagy JB, Chemical physics letters 335, 1 (2001). http://doi.org/10.1016/S0009-2614(01)00004-5
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.815
Times cited: 203
DOI: 10.1016/S0009-2614(01)00004-5
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“The fine structure of YCuO2+x delafossite determined by synchrotron powder diffraction and electron microscopy”. Van Tendeloo G, Garlea O, Darie C, Bougerol-Chaillout C, Bordet P, Journal of solid state chemistry 156, 428 (2001). http://doi.org/10.1006/jssc.2000.9018
Abstract: YCuO2 delafossite crystallizes into two stacking variants; hexagonal 2H or rhombohedral 3R, depending on the preparation conditions. The structure of the fully oxygenated material YCuO2.50 has been determined as orthorhombic (a(O) = 6.1961 Angstrom; b(O) = 11.2158 Angstrom; c(O) = 7.1505 Angstrom; space group Pnma). The structure is based on the hexagonal 2H structure (a(O) = a(H)root3; b(O) = c(H); c(O) = 2a(H)). Upon incomplete oxidation, a different YCuOZ phase with ideal composition YCuO2.33 and lattice parameters a(H root)3, a(H)root3, c(H) is also formed. Diffraction patterns are often very complex because of the presence of planar defects and intergrowth of both phases. Under electron beam irradiation, oxygen is released from the structure and one phase gradually transforms into the other. (C) 2001 Academic Press.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 33
DOI: 10.1006/jssc.2000.9018
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“Suppression of modulations in fluorinated Bi-2201 phases”. Hadermann J, Khasanova NR, Van Tendeloo G, Abakumov AM, Rozova MG, Alekseeva AM, Antipov EV, Journal of solid state chemistry 156, 445 (2001). http://doi.org/10.1006/jssc.2000.9020
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 8
DOI: 10.1006/jssc.2000.9020
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“In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates”. Ghica C, Nistor L, Bender H, Steegen A, Lauwers A, Maex K, van Landuyt J, Journal of materials research 16, 701 (2001). http://doi.org/10.1557/JMR.2001.0121
Abstract: The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.673
Times cited: 4
DOI: 10.1557/JMR.2001.0121
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“Stabilisation of fcc cobalt layers by 0.4 nm thick manganese layers in Co/Mn superlattices”. Michel A, Pierron-Bohnes V, Jay JP, Panissod P, Lefebvre S, Bessière M, Fischer HE, Van Tendeloo G, European physical journal : B : condensed matter and complex systems 19, 225 (2001). http://doi.org/10.1007/s100510170331
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.461
Times cited: 8
DOI: 10.1007/s100510170331
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“HREM study of fluorinated Nd2CuO4”. Hadermann J, Van Tendeloo G, Abakumov AM, Rozova MG, Antipov EV, Journal of solid state chemistry 157, 56 (2001). http://doi.org/10.1006/jssc.2000.9038
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 7
DOI: 10.1006/jssc.2000.9038
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“Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy”. Hens S, van Landuyt J, Bender H, Boullart W, Vanhaelemeersch S, Materials science in semiconductor processing 4, 109 (2001). http://doi.org/10.1016/S1369-8001(00)00147-5
Abstract: The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
DOI: 10.1016/S1369-8001(00)00147-5
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