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“In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Mironov OA, Parker EHC, Physical review : B : condensed matter and materials physics 61, 10336 (2000). http://doi.org/10.1103/PhysRevB.61.10336
Abstract: We present a detailed analysis of the point-defect clustering in strained Si/Si(1-x)Ge(x)/(001)Si structures, including the interaction of the point defects with the strained interfaces and the sample surface during 400 kV electron irradiation at room temperature. Point-defect cluster formation is very sensitive to the type and magnitude of the strain in the Si and Si(1-x)Ge(x) layers. A small compressive strain (-0.3%) in the SiGe alloy causes an aggregation of vacancies in the form of metastable [110]-oriented chains. They are located on {113} planes and further recombine with interstitials. Tensile strain in the Si layer causes an aggregation of interstitial atoms in the forms of additional [110] rows which are inserted on {113} planes with [001]-split configurations. The chainlike configurations are characterized by a large outward lattice relaxation for interstitial rows (0.13 +/-0.01 nm) and a very small inward relaxation for vacancy chains (0.02+/-0.01 nm). A compressive strain higher than -0.5% strongly decreases point-defect generation inside the strained SiGe alloy due to the large positive value of the formation volume of a Frenkel pair. This leads to the suppression of point-defect clustering in a strained SiGe alloy so that SiGe relaxes via a diffusion of vacancies from the Si layer, giving rise to an intermixing at the Si/SiGe interface. In material with a 0.9% misfit a strongly increased flow of vacancies from the Si layer to the SiGe layer and an increased biaxial strain in SiGe bath promote the preferential aggregation of vacancies in the (001) plane, which relaxes to form intrinsic 60 degrees dislocation loops.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 27
DOI: 10.1103/PhysRevB.61.10336
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“Structural and magnetic properties of the colossal magnetoresistance perovskite La0.85Ca0.15MnO3”. Lobanov MV, Balagurov AM, Pomjakushin VJ, Fischer P, Gutmann M, Abakumov AM, D'yachenko OG, Antipov EV, Lebedev OI, Van Tendeloo G, Physical review : B : condensed matter and materials physics 61, 8941 (2000). http://doi.org/10.1103/PhysRevB.61.8941
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 47
DOI: 10.1103/PhysRevB.61.8941
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“High-resolution electron microscopy study of strained epitaxial La0.7Sr0.3MnO3 thin films”. Lebedev OI, Van Tendeloo G, Amelinckx S, Ju HL, Krishnan KM, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 80, 673 (2000). http://doi.org/10.1080/01418610008212075
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 52
DOI: 10.1080/01418610008212075
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“Atomic and microstructure of CMR materials”. Van Tendeloo G, Lebedev OI, Amelinckx S, Journal of magnetism and magnetic materials 211, 73 (2000). http://doi.org/10.1016/S0304-8853(99)00716-7
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.63
Times cited: 48
DOI: 10.1016/S0304-8853(99)00716-7
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“Synthesis and crystal structure of a new complex oxyfluoride La0.813Sr0.187Cu(o,F)3-\delta”. Abakumov AM, Hadermann J, Rozova MG, Pavljuk BP, Antipov EV, Lebedev OI, Van Tendeloo G, Journal of solid state cemistry 149, 189 (2000). http://doi.org/10.1006/jssc.1999.8521
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 8
DOI: 10.1006/jssc.1999.8521
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“Epitaxial strain induced metal insulator transition in La0.9Sr0.1MnO3 and La0.88Sr0.1MnO3 thin films”. Razavi FS, Gross G, Habermeier H-U, Lebedev O, Amelinckx S, Van Tendeloo G, Vigliante A, Applied physics letters 76, 155 (2000). http://doi.org/10.1063/1.125687
Abstract: We are reporting an unexpected metal insulator transition at the ferromagnetic phase-transition temperature for thin films of La0.9Sr0.1MnO3 (< 50 nm), grown on a (100) face of SrTiO3 substrate. For the thicker films (> 50 nm), similar to the single crystal, no such transition is observed below T-C. Additionally, we observe the suppression of the features associated with charge or orbital ordering in intentionally La-deficient thin films of La0.88Sr0.1MnO3 (< 75 nm). In thin films, transmission electron microscopy reveals a compressive strain due to the epitaxial growth, that is, lattice parameters adopt those of the cubic lattice of SrTiO3. As the film thickness increases, coherent microtwinning is observed in the films and the films relax to a orthorhombic structure. (C) 2000 American Institute of Physics. [S0003-6951(00)00402-2].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 91
DOI: 10.1063/1.125687
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“Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE”. Farvacque JL, Bougrioua Z, Moerman I, Van Tendeloo G, Lebedev O, Physica: B : condensed matter
T2 –, 20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA 273-4, 140 (1999). http://doi.org/10.1016/S0921-4526(99)00431-7
Abstract: Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 10(18) cm(-3). We show that such a behavior can be theoretically reproduced by assuming that the columnar structure i.e. the dislocation microstructure is responsible for internal electronic barriers. (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.386
Times cited: 5
DOI: 10.1016/S0921-4526(99)00431-7
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“Josephson phenomenology and microstructure of YBaCuO artificial grain boundaries characterized by misalignment of the c-axes”. Tafuri F, Granozio FM, Carillo F, Lombardi F, Di Uccio US, Verbist K, Lebedev O, Van Tendeloo G, Physica: C : superconductivity 327, 63 (1999). http://doi.org/10.1016/S0921-4534(99)00372-X
Abstract: YBa(2)Cu(3)O(7-delta) (YBCO) grain boundaries characterized by a misalignment of the c-axes (45 degrees c-axis tilt or 45 degrees c-axis twist) have been obtained by employing a recently implemented biepitaxial technique. Junctions based on these grain boundaries exhibit good Josephson properties useful for applications. High values of the I(C)R(N) product and a Fraunhofer-like dependence of the critical current on the magnetic field, differently from traditional biepitaxial junctions, have been obtained. The correlation between transport properties and microstructure has been investigated by Transmission Electron Microscopy (TEM), which was also performed on previously measured junctions. The presence of atomically clean basal plane (BP) faced tilt boundaries, among other types of interfaces, has been shown. The possibility of selecting these kinds of boundaries by controlling film growth, and their possible advantages in terms of reproducibility and uniformity of the junction properties an discussed. The possibility of employing these junctions to explore the symmetry of the order parameter is also discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 7
DOI: 10.1016/S0921-4534(99)00372-X
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“Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE”. Bougrioua Z, Farvacque J-L, Moerman I, Demeester P, Harris JJ, Lee K, Van Tendeloo G, Lebedev O, Trush EJ, Physica status solidi: B: basic research 216, 571 (1999). http://doi.org/10.1002/(SICI)1521-3951(199911)216:1<571::AID-PSSB571>3.0.CO;2-K
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 13
DOI: 10.1002/(SICI)1521-3951(199911)216:1<571::AID-PSSB571>3.0.CO;2-K
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“Structural transformations in the fluorinated T* phase”. Hadermann J, Abakumov AM, Lebedev OI, Van Tendeloo G, Rozova MG, Shpanchenko RV, Pavljuk BP, Kopnin EM, Antipov EV, Journal of solid state chemistry 147, 647 (1999). http://doi.org/10.1006/jssc.1999.8438
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 8
DOI: 10.1006/jssc.1999.8438
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“Phase competition between Y2BaCuO5 and Y2O3 precipitates in Y-rich YBCO thin films”. Scotti di Uccio U, Miletto Granozio F, di Chiara A, Tafuri F, Lebedev OI, Verbist K, Van Tendeloo G, Physica: C : superconductivity 321, 162 (1999)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 17
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“The phase transition and crystal structures of Ba3RM2O7.5 complex oxides (R=rare-earth elements, M = Al,Ga)”. Abakumov AM, Shpanchenko RV, Lebedev OI, Van Tendeloo G, Amelinckx S, Antipov EV, Acta crystallographica: section A: foundations of crystallography 55, 828 (1999). http://doi.org/10.1107/S0108767399002068
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.725
Times cited: 7
DOI: 10.1107/S0108767399002068
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“Correlation of microstructure and magnetotransport properties of epitaxially grown La-Ca-Mn-O3 thin films”. Habermeier HU, Razavi F, Lebedev O, Gross GM, Praus R, Zhang PX, Physica status solidi: B: basic research
T2 –, International Conference on Solid State Spectroscopy –, (ICSSS), SEP 05-07, 1999, SCHWABISCH-GMUND, GERMANY 215, 679 (1999). http://doi.org/10.1002/(SICI)1521-3951(199909)215:1<679::AID-PSSB679>3.0.CO;2-H
Abstract: We have investigated epitaxially grown single-crystalline Ca-doped LaMnO3 thin films using the pulsed laser deposition technique in a case study aimed to explore the possibilities buried in epitaxial stress tailoring in order to control the transport properties of CMR materials beyond the limits set by equilibrium thermodynamics. Depending on the film thickness there is an abrupt transition from pseudomorphic to epitaxial granular growth observable which is related to the epitaxial strain of the films. This is associated with microscopic stress relaxation and leads to well controllable modifications of the atomic arrangements of the Mn-O sublattice in the films. Due to the interrelation of double exchange, spin-, charge- and orbital ordering and the Jahn-Teller effect mediated coupling of the electronic system to the crystal lattice, the magnetotransport properties of the firms can be modified in a controllable way.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.674
Times cited: 3
DOI: 10.1002/(SICI)1521-3951(199909)215:1<679::AID-PSSB679>3.0.CO;2-H
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“Influence of water on the pillaring of montmorillonite with aminopropyltriethoxysilane”. Ahenach J, Cool P, Vansant EF, Lebedev O, van Landuyt J, Physical chemistry, chemical physics 1, 3703 (1999). http://doi.org/10.1039/a901888c
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
Impact Factor: 4.123
Times cited: 10
DOI: 10.1039/a901888c
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“A study of the domain structure of epitaxial (La-Ca)MnO3 films by high-resolution transmission electron microscopy”. Lebedev OI, Van Tendeloo G, Abakumov AM, Amelinckx S, Leibold B, Habermeier H-U, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 79, 1461 (1999). http://doi.org/10.1080/01418619908210372
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 27
DOI: 10.1080/01418619908210372
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“The local structure of YBCO based materials by TEM”. Van Tendeloo G, Lebedev OI, Verbist K, Abakumov AM, Shpanchenko RV, Antipov EV, Blank DHA Kluwer Academic, Dordrecht, page 11 (1999).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction”. Verbist K, Lebedev OI, Van Tendeloo G, Tafuri F, Granozio FM, Di Chiara A, Bender H, Applied physics letters 74, 1024 (1999). http://doi.org/10.1063/1.123443
Abstract: A method to correlate microstructure from cross-section transmission electron microscopy (TEM) investigations and transport properties of a single well characterized high-T-c artificial grain boundary junction is reported. A YBa2Cu3O7-delta 45 degrees twist junction exhibiting the typical phenomenology of high T-c Josephson weak links was employed. The TEM sample preparation is based on focused ion beam etching and allows to easily localize the electron transparent area on a microbridge. The reported technique opens clear perspectives in the determination of the microstructural origin of variations in Josephson junction properties, such as the spread in I-c and IcRN values and the presence of different transport regimes in nominally identical junctions. (C) 1999 American Institute of Physics. [S0003-6951(99)03404-X].
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 5
DOI: 10.1063/1.123443
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“Synthesis and structural study of hexagonal pervoskites in the Ba5>Ta4O15-MZrO3 (M=Ba, Sr) system”. Abakumov AM, Shpanchenko RV, Antipov EV, Lebedev OI, Van Tendeloo G, Amelinckx S, Journal of solid state chemistry 141, 492 (1998). http://doi.org/10.1006/jssc.1998.8001
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 17
DOI: 10.1006/jssc.1998.8001
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“Structure and magnetotransport properties of La2/3Ca1/3MnO3 thin films prepared by pulsed laser deposition”. Lebedev OI, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier HU, Phillipp F, Materials Research Society symposium proceedings
T2 –, Symposium on Advances in Laser Ablation of Materials at the 1998 MRS, Spring Meeting, April 13-16, 1998, San Francisco, Calif. , 219 (1998). http://doi.org/10.1557/PROC-526-219
Abstract: La1-xCaxMnO3-delta (LCMO) thin films are grown by pulsed laser deposition on a (100) SrTiO3 substrate at temperatures between 530 degrees C and 890 degrees C. The magnetotransport properties show a high negative magnetoresistance and a shift of the maximum of the R(T) curve as function of temperature. The Curie temperature changes with deposition temperature and film quality in the range of 100-220K. The film quality is characterised by X-ray diffraction and transmission electron microscopy (TEM); film and target compositions were verified by atomic emission spectroscopy. The local structure of the film depends on the growth conditions and substrate temperature. TEM reveals a slight distortion of the film leading to a breakdown of the symmetry from orthorhombic to monoclinic. At the highest growth temperatures, a well defined interface is observed within the LCMO film, parallel to the substrate surface; this interface divides the film into two lamellae with a different microstructure. The lamella close to the substrate is perfectly coherent with the substrate, suggesting that it is strained as a result of the lattice parameter mismatch; the upper lamella shows a typical domain structure with unusual translation interfaces characterised by a displacement vector of the type 1/2[010](m) and 1/2[001](m) when referred ten the monoclinic lattice.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
DOI: 10.1557/PROC-526-219
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“Structure of Y123 and Y247 fluorinated phases by HREM”. Lebedev OI, Van Tendeloo G, Abakumov AM, Shpanchenko RV, Rozova MG, Antipov EV, Electron microscopy: vol. 3 , 297 (1998)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“HREM investigation of La(1-x)Ca(x)MnO3-delta thin films”. Lebedev O, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier HU, , 517 (1998)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“HREM investigation of La1-xCaxMnO3- thin films”. Lebedev OI, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier H-U, Electron microscopy: vol. 2 , 517 (1998)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Structure and microstructure of La1-xCaxMnO3- thin films prepared by pulsed layer deposition”. Lebedev OI, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier H-U, Physical review : B : condensed matter and materials physics 58, 8065 (1998). http://doi.org/10.1103/PhysRevB.58.8065
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 131
DOI: 10.1103/PhysRevB.58.8065
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“Synthesis and structural study of Pb2Re2O7-x pyrochlores”. Abakumov AM, Shpanchenko RV, Antipov EV, Kopnin EM, Capponi JJ, Marezio M, Lebedev OI, Van Tendeloo G, Amelinckx S, Journal of solid state chemistry 138, 220 (1998). http://doi.org/10.1006/jssc.1998.7778
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 5
DOI: 10.1006/jssc.1998.7778
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“Effects of fluorination on the structure and superconducting properties of Y2Ba4Cu7O14+ phases”. Abakumov A, Rozova M, Shpanchenko R, Kovba M, Putilin S, Antipov E, Lebedev O, Van Tendeloo G, Kopnin E, Karpinski J, Physica: C : superconductivity 301, 155 (1998). http://doi.org/10.1016/S0921-4534(98)00108-7
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 9
DOI: 10.1016/S0921-4534(98)00108-7
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“Study of ramp-type Josephson junctions by HREM”. Verbist K, Lebedev OI, Van Tendeloo G, Verhoeven MAJ, Rijnders AJHM, Blank DHA, Electronic Applications, Vol 2: Large Scale And Power Applications , 49 (1997)
Abstract: Structural aspects of ramp-type Josephson junctions based on REBa2Cu3O7-delta high-T-c superconductors, are investigated by cross-section transmission electron microscopy and results related to fabrication process or physical properties. The barrier layer material is PrBa2Cu3-xGaxO7-delta. The ramp-geometry depends on the etching conditions. High levels of Ga doping (x>0.7) influence the microstructure of the barrier layer thereby changing the junctions properties.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure”. Fedina L, Lebedev OI, Van Tendeloo G, van Landuyt J, Conference series of the Institute of Physics 157, 55 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
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“Microstructure of YBa2Cu3O7-\delta Josephson junctions in relation to their properties”. Verbist K, Lebedev OI, Verhoeven MAJ, Winchern R, Rijnders AJHM, Blank DHA, Tafuri F, Bender H, Van Tendeloo G, Superconductor science and technology 11, 13 (1998). http://doi.org/10.1088/0953-2048/11/1/004
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.878
DOI: 10.1088/0953-2048/11/1/004
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“Biaxially aligned yttria stabilized zirconia and titanium nitride layers deposited by unbalanced magnetron sputtering”. Mahieu S, Ghekiere P, de Winter G, de Gryse R, Depla D, Lebedev OI, Diffusion and defect data : solid state data : part B : solid state phenomena
T2 –, 2nd International Conference on Texture and Anisotropy of Polycrystals, JUL 07-09, 2004, Metz, FRANCE 105, 447 (2005)
Abstract: Control of the texture and the biaxial alignment of sputter deposited films has provoked a great deal of interest due to its technological importance. indeed, many physical properties of thin films are influenced by the biaxial alignment. In this context, extensive research has been established to understand the growth mechanism of biaxially aligned Yttria Stabilized Zirconia (YSZ) as a buffer layer for high temperature superconducting copper oxides. In this work, the growth mechanism in general and the mechanism responsible of the biaxial alignment in detail were investigated for thin films of YSZ and TiN deposited by unbalanced magnetron sputtering using non-aligned polycrystalline stainless steel substrates. The mechanism responsible for the preferential out-of-plane alignment has been investigated by performing depositions on a non-tilted substrate. However, to study the in-plane alignment a tilted substrate was used. The microstructure of the deposited layers was characterised by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The crystallographic alignment has been investigated by X-ray diffraction (XRD) (angular scans and pole figures) and by Selective Area Diffraction (SAD). It was observed that the deposited layers show a zone T or zone II structure and the layers with a zone T structure consist of faceted grains. There seems to be a correlation between the crystal habit of these faceted grains and the measured biaxial alignment. A model for the preferential out-of-plane orientation, the in-plane alignment and the correlation between the microstructure and the biaxial alignment is proposed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy”. De Gryse O, Clauws P, Vanhellemont J, Lebedev O, van Landuyt J, Simoen E, Claeys C, , 183 (2002)
Abstract: Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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