Records |
Author |
Vanraes, P.; Bogaerts, A. |
Title |
The essential role of the plasma sheath in plasma–liquid interaction and its applications—A perspective |
Type |
A1 Journal Article |
Year |
2021 |
Publication |
Journal Of Applied Physics |
Abbreviated Journal |
J Appl Phys |
Volume |
129 |
Issue |
22 |
Pages |
220901 |
Keywords |
A1 Journal Article; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ; |
Abstract |
Based on the current knowledge, a plasma–liquid interface looks and behaves very differently from its counterpart at a solid surface. Local processes characteristic to most liquids include a stronger evaporation, surface deformations, droplet ejection, possibly distinct mechanisms behind secondary electron emission, the formation of an electric double layer, and an ion drift-mediated liquid resistivity. All of them can strongly influence the interfacial charge distribution. Accordingly, the plasma sheath at a liquid surface is most likely unique in its own way, both with respect to its structure and behavior. However, insights into these properties are still rather scarce or uncertain, and more studies are required to further disclose them. In this Perspective, we argue why more research on the plasma sheath is not only recommended but also crucial to an accurate understanding of the plasma–liquid interaction. First, we analyze how the sheath regulates various elementary processes at the plasma–liquid interface, in terms of the electrical coupling, the bidirectional mass transport, and the chemistry between plasma and liquid phase. Next, these three regulatory functions of the sheath are illustrated for concrete applications. Regarding the electrical coupling, a great deal of attention is paid to the penetration of fields into biological systems due to their relevance for plasma medicine, plasma agriculture, and food processing. Furthermore, we illuminate the role of the sheath in nuclear fusion, nanomaterial synthesis, and chemical applications. As such, we hope to motivate the plasma community for more fundamental research on plasma sheaths at liquid surfaces. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
000681700000013 |
Publication Date |
2021-06-14 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.068 |
Times cited |
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Open Access |
OpenAccess |
Notes |
P.V. thanks Dr. Angela Privat Maldonado (University of Antwerp) for the fruitful discussions on Sec. III and Professor Mark J. Kushner (University of Michigan) for the interesting discussion on Ref. 198. |
Approved |
Most recent IF: 2.068 |
Call Number |
PLASMANT @ plasmant @c:irua:178814 |
Serial |
6794 |
Permanent link to this record |
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Author |
Karaaslan, Y.; Haskins, J.B.; Yapicioglu, H.; Sevik, C. |
Title |
Influence of randomly distributed vacancy defects on thermal transport in two-dimensional group-III nitrides |
Type |
A1 Journal article |
Year |
2021 |
Publication |
Journal Of Applied Physics |
Abbreviated Journal |
J Appl Phys |
Volume |
129 |
Issue |
22 |
Pages |
224304 |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
Abstract |
Efficient thermal transport control is a fundamental issue for electronic device applications such as information, communication, and energy storage technologies in modern electronics in order to achieve desired thermal conditions. Structural defects in materials provide a mechanism to adjust the thermal transport properties of these materials on demand. In this context, the effect of structural defects on lattice thermal conductivities of two-dimensional hexagonal binary group-III nitride (XN, X = B, Al, and Ga) semiconductors is systematically investigated by means of classical molecular dynamics simulations performed with recently developed transferable inter-atomic potentials accurately describing defect energies. Here, two different Green-Kubo based approaches and another approach based on non-equilibrium molecular dynamics are compared in order to get an overall understanding. Our investigation clearly shows that defect concentrations of 3% decrease the thermal conductivity of systems containing these nitrites up to 95%. Results hint that structural defects can be used as effective adjustment parameters in controlling thermal transport properties in device applications associated with these materials. Published under an exclusive license by AIP Publishing. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
000692024300001 |
Publication Date |
2021-06-09 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; 1089-7550 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.068 |
Times cited |
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Open Access |
Not_Open_Access |
Notes |
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Approved |
Most recent IF: 2.068 |
Call Number |
UA @ admin @ c:irua:181618 |
Serial |
8096 |
Permanent link to this record |
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Author |
Sun, J.; Li, Y.; Karaaslan, Y.; Sevik, C.; Chen, Y. |
Title |
Misfit dislocation structure and thermal boundary conductance of GaN/AlN interfaces |
Type |
A1 Journal article |
Year |
2021 |
Publication |
Journal Of Applied Physics |
Abbreviated Journal |
J Appl Phys |
Volume |
130 |
Issue |
3 |
Pages |
035301 |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
Abstract |
The structure and thermal boundary conductance of the wurtzite GaN/AlN (0001) interface are investigated using molecular dynamics simulation. Simulation results with three different empirical interatomic potentials have produced similar misfit dislocation networks and dislocation core structures. Specifically, the misfit dislocation network at the GaN/AlN interface is found to consist of pure edge dislocations with a Burgers vector of 1/3(1 (2) over bar 10) and the misfit dislocation core has an eight-atom ring structure. Although different interatomic potentials lead to different dislocation properties and thermal conductance values, all have demonstrated a significant effect of misfit dislocations on the thermal boundary conductance of the GaN/AlN (0001) interface. Published under an exclusive license by AIP Publishing. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
000694725800001 |
Publication Date |
2021-07-15 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; 1089-7550 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.068 |
Times cited |
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Open Access |
Not_Open_Access |
Notes |
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Approved |
Most recent IF: 2.068 |
Call Number |
UA @ admin @ c:irua:181623 |
Serial |
8254 |
Permanent link to this record |
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Author |
Milošević, M.V.; Mandrus, D. |
Title |
2D quantum materials : magnetism and superconductivity |
Type |
A1 Journal article |
Year |
2021 |
Publication |
Journal Of Applied Physics |
Abbreviated Journal |
J Appl Phys |
Volume |
130 |
Issue |
18 |
Pages |
180401 |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
Abstract |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
000720289900004 |
Publication Date |
2021-11-11 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; 1089-7550 |
ISBN |
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Additional Links |
UA library record; WoS full record |
Impact Factor |
2.068 |
Times cited |
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Open Access |
Not_Open_Access |
Notes |
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Approved |
Most recent IF: 2.068 |
Call Number |
UA @ admin @ c:irua:184090 |
Serial |
6963 |
Permanent link to this record |
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Author |
Osca, J.; Sorée, B. |
Title |
Torque field and skyrmion motion by spin transfer torque in a quasi-2D interface in presence of strong spin-orbit interaction |
Type |
A1 Journal article |
Year |
2021 |
Publication |
Journal Of Applied Physics |
Abbreviated Journal |
J Appl Phys |
Volume |
130 |
Issue |
13 |
Pages |
133903 |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
Abstract |
We investigate the torque field and skyrmion motion at an interface between a ferromagnet hosting a skyrmion and a material with a strong spin-orbit interaction. We analyze both semiconductor materials and topological insulators using a Hamiltonian model that includes a linear term. The spin torque-inducing current is considered to flow in the single band limit; therefore, a quantum model of current is used. Skyrmion motion due to spin transfer torque proves to be more difficult in the presence of a spin-orbit interaction in the case where only interface in-plane currents are present. However, edge effects in narrow nanowires can be used to drive the skyrmion motion and to exert a limited control on its motion direction. We also show the differences and similarities between torque fields due to electric current in the many and single band limits. Published under an exclusive license by AIP Publishing. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
000755090400003 |
Publication Date |
2021-10-07 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; 1089-7550 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.068 |
Times cited |
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Open Access |
Not_Open_Access |
Notes |
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Approved |
Most recent IF: 2.068 |
Call Number |
UA @ admin @ c:irua:186452 |
Serial |
7034 |
Permanent link to this record |
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Author |
Sargin, G.O.; Sarikurt, S.; Sevincli, H.; Sevik, C. |
Title |
The peculiar potential of transition metal dichalcogenides for thermoelectric applications : a perspective on future computational research |
Type |
A1 Journal article |
Year |
2023 |
Publication |
Journal of applied physics |
Abbreviated Journal |
|
Volume |
133 |
Issue |
15 |
Pages |
150902-150937 |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
Abstract |
The peculiar potential transition metal dichalcogenides in regard to sensor and device applications have been exhibited by both experimental and theoretical studies. The use of these materials, thermodynamically stable even at elevated temperatures, particularly in nano- and optoelectronic technology, is about to come true. On the other hand, the distinct electronic and thermal transport properties possessing unique coherency, which may result in higher thermoelectric efficiency, have also been reported. However, exploiting this potential in terms of power generation and cooling applications requires a deeper understanding of these materials in this regard. This perspective study, concentrated with this intention, summarizes thermoelectric research based on transition metal dichalcogenides from a broad perspective and also provides a general evaluation of future theoretical investigations inevitable to shed more light on the physics of electronic and thermal transport in these materials and to lead future experimental research. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
001079329000001 |
Publication Date |
2023-04-27 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; 1089-7550 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.2 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.2; 2023 IF: 2.068 |
Call Number |
UA @ admin @ c:irua:200351 |
Serial |
9105 |
Permanent link to this record |
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Author |
Mehmonov, K.; Ergasheva, A.; Yusupov, M.; Khalilov, U. |
Title |
The role of carbon monoxide in the catalytic synthesis of endohedral carbyne |
Type |
A1 Journal article |
Year |
2023 |
Publication |
Journal of applied physics |
Abbreviated Journal |
|
Volume |
134 |
Issue |
14 |
Pages |
144303-144307 |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
The unique physical properties of carbyne, a novel carbon nanostructure, have attracted considerable interest in modern nanotechnology. While carbyne synthesis has been accomplished successfully using diverse techniques, the underlying mechanisms governing the carbon monoxide-dependent catalytic synthesis of endohedral carbyne remain poorly understood. In this simulation-based study, we investigate the synthesis of endohedral carbyne from carbon and carbon monoxide radicals in the presence of a nickel catalyst inside double-walled carbon nanotubes with a (5,5)@(10,10) structure. The outcome of our investigation demonstrates that the incorporation of the carbon atom within the Ni-n@(5,5)@(10,10) model system initiates the formation of an elongated carbon chain. In contrast, upon the introduction of carbon monoxide radicals, the growth of the carbyne chain is inhibited as a result of the oxidation of endohedral nickel clusters by oxygen atoms after the initial steps of nucleation. Our findings align with prior theoretical, simulation, and experimental investigations, reinforcing their consistency and providing valuable insights into the synthesis of carbyne-based nanodevices that hold promising potential for future advancements in nanotechnology. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
001083993400003 |
Publication Date |
2023-10-10 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; 1089-7550 |
ISBN |
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Additional Links |
UA library record; WoS full record |
Impact Factor |
3.2 |
Times cited |
|
Open Access |
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Notes |
|
Approved |
Most recent IF: 3.2; 2023 IF: 2.068 |
Call Number |
UA @ admin @ c:irua:201233 |
Serial |
9106 |
Permanent link to this record |
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Author |
Duran, T.A.; Yayak, Y.O.; Aydin, H.; Peeters, F.M.; Yagmurcukardes, M. |
Title |
A perspective on the state-of-the-art functionalized 2D materials |
Type |
A1 Journal article |
Year |
2023 |
Publication |
Journal of applied physics |
Abbreviated Journal |
|
Volume |
134 |
Issue |
12 |
Pages |
120901-120929 |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
Abstract |
Two-dimensional (2D) ultra-thin materials are more crucial than their bulk counterparts for the covalent functionalization of their surface owing to atomic thinness, large surface-to-volume ratio, and high reactivity of surface atoms having unoccupied orbitals. Since the surface of a 2D material is composed of atoms having unoccupied orbitals, covalent functionalization enables one to improve or precisely modify the properties of the ultra-thin materials. Chemical functionalization of 2D materials not only modifies their intrinsic properties but also makes them adapted for nanotechnology applications. Such engineered materials have been used in many different applications with their improved properties. In the present Perspective, we begin with a brief history of functionalization followed by the introduction of functionalized 2D materials. Our Perspective is composed of the following sections: the applications areas of 2D graphene and graphene oxide crystals, transition metal dichalcogenides, and in-plane anisotropic black phosphorus, all of which have been widely used in different nanotechnology applications. Finally, our Perspectives on the future directions of applications of functionalized 2D materials are given. The present Perspective sheds light on the current progress in nanotechnological applications of engineered 2D materials through surface functionalization. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
001087770500008 |
Publication Date |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; 1089-7550 |
ISBN |
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Additional Links |
UA library record; WoS full record |
Impact Factor |
3.2 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.2; 2023 IF: 2.068 |
Call Number |
UA @ admin @ c:irua:201281 |
Serial |
9000 |
Permanent link to this record |
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Author |
Liu, J.; Xu, W.; Xiao, Y.M.; Ding, L.; Li, H.W.; Peeters, F.M. |
Title |
Optical spectrum of n-type and p-type monolayer MoS₂ in the presence of proximity-induced interactions |
Type |
A1 Journal article |
Year |
2023 |
Publication |
Journal of applied physics |
Abbreviated Journal |
|
Volume |
134 |
Issue |
22 |
Pages |
224301-224307 |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
Abstract |
In this paper, we examined the effects of proximity-induced interactions such as Rashba spin-orbit coupling and effective Zeeman fields (EZFs) on the optical spectrum of n-type and p-type monolayer (ML)-MoS2. The optical conductivity is evaluated using the standard Kubo formula under random-phase approximation by including the effective electron-electron interaction. It has been found that there exist two absorption peaks in n-type ML-MoS2 and two knife shaped absorptions in p-type ML-MoS2, which are contributed by the inter-subband spin-flip electronic transitions within conduction and valence bands at valleys K and K ' with a lifted valley degeneracy. The optical absorptions in n-type and p-type ML-MoS 2 occur in THz and infrared radiation regimes and the position, height, and shape of them can be effectively tuned by Rashba parameter, EZF parameters, and carrier density. The interesting theoretical predictions in this study would be helpful for the experimental observation of the optical absorption in infrared to THz bandwidths contributed by inter-subband spin-flip electronic transitions in a lifted valley degeneracy monolayer transition metal dichalcogenides system. The obtained results indicate that ML-MoS2 with the platform of proximity interactions make it a promising infrared and THz material for optics and optoelectronics. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
001135684400003 |
Publication Date |
2023-12-11 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; 1089-7550 |
ISBN |
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Additional Links |
UA library record; WoS full record |
Impact Factor |
3.2 |
Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: 3.2; 2023 IF: 2.068 |
Call Number |
UA @ admin @ c:irua:202777 |
Serial |
9069 |
Permanent link to this record |
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Author |
Bogaerts, A.; van Straaten, M.; Gijbels, R. |
Title |
Description of the thermalization process of the sputtered atoms in a glow discharge using a 3-dimensional Monte Carlo method |
Type |
A1 Journal article |
Year |
1995 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
Volume |
77 |
Issue |
|
Pages |
1868-1874 |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
A1995RC30300006 |
Publication Date |
2002-07-26 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.183 |
Times cited |
87 |
Open Access |
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Notes |
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Approved |
no |
Call Number |
UA @ lucian @ c:irua:12270 |
Serial |
655 |
Permanent link to this record |
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Author |
Bogaerts, A.; Gijbels, R.; Goedheer, W. |
Title |
Hybrid Monte Carlo-fluid model of a direct current glow discharge |
Type |
A1 Journal article |
Year |
1995 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
Volume |
78 |
Issue |
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Pages |
2233-2241 |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
A1995RP71800009 |
Publication Date |
2002-07-26 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.183 |
Times cited |
117 |
Open Access |
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Notes |
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Approved |
no |
Call Number |
UA @ lucian @ c:irua:12262 |
Serial |
1526 |
Permanent link to this record |
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Author |
Bogaerts, A.; Gijbels, R. |
Title |
The role of fast argon ions and atoms in the ionization of argon in a direct current glow discharge: a mathematical simulation |
Type |
A1 Journal article |
Year |
1995 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
Volume |
78 |
Issue |
|
Pages |
6427-6431 |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
A1995TH85100012 |
Publication Date |
2002-07-26 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.183 |
Times cited |
60 |
Open Access |
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Notes |
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Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 # |
Call Number |
UA @ lucian @ c:irua:12264 |
Serial |
2913 |
Permanent link to this record |
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Author |
Chu, D.P.; Peeters, F.M.; Kolodinski, S.; Roca, E. |
Title |
Theoretical investigation of CoSi2/Si1-xGex detectors: influence of a Si tunneling barrier on the electro-optical characteristics |
Type |
A1 Journal article |
Year |
1996 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
Volume |
79 |
Issue |
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Pages |
1151-1156 |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
Abstract |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
A1996TQ77500084 |
Publication Date |
0000-00-00 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; 1089-7550 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.183 |
Times cited |
3 |
Open Access |
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Notes |
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Approved |
no |
Call Number |
UA @ lucian @ c:irua:15801 |
Serial |
3606 |
Permanent link to this record |
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Author |
Bogaerts, A.; Gijbels, R. |
Title |
Role of sputtered Cu atoms and ions in a direct current glow discharge: combined fluid and Monte Carlo model |
Type |
A1 Journal article |
Year |
1996 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
Volume |
79 |
Issue |
3 |
Pages |
1279-1286 |
Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
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Corporate Author |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
A1996TT92200011 |
Publication Date |
2002-07-26 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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ISSN |
0021-8979; |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.183 |
Times cited |
81 |
Open Access |
|
Notes |
|
Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 # |
Call Number |
UA @ lucian @ c:irua:16239 |
Serial |
2920 |
Permanent link to this record |
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Author |
Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; Hevesi, K.; Gensterblum, G.; Yu, L.M.; Pireaux, J.J.; Grey, F.; Bohr, J. |
Title |
Structural defects and epitaxial rotation of C60 and C70 (111) films on GeS(001) |
Type |
A1 Journal article |
Year |
1996 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
Volume |
80 |
Issue |
6 |
Pages |
3310-3318 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
A transmission electron microscopy study of epitaxial C-60 and C-70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C-60 and C-70 crystals, are studied. Small misalignments of the overlayers with respect to the orientation of the substrate, so-called epitaxial rotations, exist mainly in C-70 films, but also sporadically in the C-60 overlayers. A simple symmetry model, previously used to predict the rotation of hexagonal overlayers on hexagonal substrates, is numerically tested and applied to the present situation. Some qualitative conclusions concerning the substrate-film interaction are deduced. (C) 1996 American Institute of Physics. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
A1996VG68100027 |
Publication Date |
2002-07-26 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
|
Edition |
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.183 |
Times cited |
6 |
Open Access |
|
Notes |
|
Approved |
|
Call Number |
UA @ lucian @ c:irua:95233 |
Serial |
3229 |
Permanent link to this record |
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Author |
Hai, G.-Q.; Studart, N.; Peeters, F.M.; Koenraad, P.M.; Wolter, J.H. |
Title |
Intersubband-coupling and screening effects on the electron transport in a quasi-two-dimensional δ-doped semiconductor system |
Type |
A1 Journal article |
Year |
1996 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
Volume |
80 |
Issue |
|
Pages |
5809-5814 |
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
Abstract |
The effects due to intersubband coupling and screening on the ionized impurity scattering are studied for a quasi-two-dimensional electron system in delta-doped semiconductors. We found that intersubband coupling plays an essential role in describing the screening properties and the effect of ionized impurity scattering on the mobility in a multisubband system. At the onset of the occupation of a higher subband, the screening due to the intersubband coupling leads to a reduction of the small angle scattering rate in the lower subband. We showed that such an effect is significant in a delta-doped quantum well and results in a pronounced increase of the quantum mobility at the onset of the occupation of a higher subband. (C) 1996 American Institute of Physics. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
A1996VU98700039 |
Publication Date |
2002-07-26 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.183 |
Times cited |
40 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:15789 |
Serial |
1712 |
Permanent link to this record |
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Author |
Laffez, P.; Van Tendeloo, G.; Seshadri, R.; Hervieu, M.; Martin, C.; Maignan, A.; Raveau, B. |
Title |
Microstructural and physical properties of layered manganite oxides related to the magnetoresistive perovskites |
Type |
A1 Journal article |
Year |
1996 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
Volume |
80 |
Issue |
|
Pages |
5850-5856 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
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Corporate Author |
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Thesis |
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
A1996VU98700045 |
Publication Date |
2002-07-26 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.183 |
Times cited |
36 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:17848 |
Serial |
2039 |
Permanent link to this record |
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Author |
Milants, K.; Verheyden, J.; Barancira, T.; Deweerd, W.; Pattyn, H.; Bukshpan, S.; Williamson, D.L.; Vermeiren, F.; Van Tendeloo, G.; Vlekken, C.; Libbrecht, S.; van Haesendonck, C. |
Title |
Size distribution and magnetic behavior of lead inclusions in silicon single crystals |
Type |
A1 Journal article |
Year |
1997 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
Volume |
81 |
Issue |
5 |
Pages |
2148-2152 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
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Thesis |
|
Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos ![sorted by Wos field, ascending order (up)](img/sort_asc.gif) |
A1997WK08800017 |
Publication Date |
0000-00-00 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
ISSN |
0021-8979; 1089-7550 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.068 |
Times cited |
8 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.068; 1997 IF: 1.630 |
Call Number |
UA @ lucian @ c:irua:21433 |
Serial |
3035 |
Permanent link to this record |