“Hole subbands and effective masses in p-doped [113]-grown heterojunctions”. Goldoni G, Peeters FM, Physical review : B : condensed matter and materials physics 51, 17806 (1995). http://doi.org/10.1103/PhysRevB.51.17806
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 14
DOI: 10.1103/PhysRevB.51.17806
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“Multisubband electron transport in δ-doped semiconductor systems”. Hai GQ, Studart N, Peeters FM, Physical review : B : condensed matter and materials physics 52, 8363 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 65
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“Multisubband electron-transport in delta-doped semiconductor systems”. Hai, Studart, Peeters FM, Physical review : B : condensed matter and materials physics 52, 8363 (1995). http://doi.org/10.1103/PhysRevB.52.8363
Abstract: The electron transport properties in delta-doped semiconductor systems-are studied. The subband electronic structure of the delta-doped system is obtained by solving the coupled Schrodinger and Poisson equations. The screening of the quasi-two-dimensional electron gas is taken into account for the ionized impurity scattering through the matrix dielectric function within the random-phase approximation. The quantum and transport mobilities are calculated numerically as a function of the total electron density and the width of the doped layer at zero temperature. The intersubband scattering and the effect of empty subbands above the Fermi level on the electron mobilities are investigated. The calculated mobilities are in reasonable agreement with the available experimental results.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 67
DOI: 10.1103/PhysRevB.52.8363
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“Effect of the substitution Ba\leftrightarrow Sr on the Ga-1222 superstructure : an electron diffraction study”. Milat O, Van Tendeloo G, Amelinckx S, Wright AJ, Greaves C, Chemistry of materials 7, 1709 (1995). http://doi.org/10.1021/cm00057a021
Abstract: The superstructure of the RE(2)(Sr0.85-xBaxNd0.15)(2)GaCU2O9 compound is found to change significantly with increasing substitution of Ba for Sr. Most of the changes take place in the (Sr0.85-xBaxNd0.15)O-GaO-(Sr0.85-xBaxNd0.15)O lamella, the rest of the basic structure being hardly affected. The structural changes for O less than or equal to x less than or equal to 0.65 are studied by electron diffraction. The arrangement of the chains of GaO4 tetrahedra in the Ba-free compound becomes disordered at x > 0.25. At x similar to 0.65 a rearrangement of the chains in the GaO layers takes place; they form a meandering arrangement, which can be described on a 4a(p) x 2a(p) x c(p) superlattice. This rearrangement is accompanied by ordering of Ba and Sr atoms in the adjacent (ST0.85-xBaxNd0.15)O layers. A simple scheme is proposed to explain the influence of the substitution of Ba for Sr on the linking of the GaO4 tetrahedra and on the geometry of the ''chains'' in the GaO layer.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.354
DOI: 10.1021/cm00057a021
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“Nonlinear Schrödinger equation on a circle”. Smondyrev MA, Vansant P, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 52, 11231 (1995). http://doi.org/10.1103/PhysRevB.52.11231
Abstract: The nonlinear Schrodinger equation is solved on an infinitesimal thin ring or circle. We obtained the exact real wave functions with their corresponding energies for the ground state and the excited states. Critical values of the circle perimeter are found at which the ground state changes its structure and additional higher excited states appear. Also, the complex wave functions that correspond to energy levels with finite angular momentum are studied.
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 5
DOI: 10.1103/PhysRevB.52.11231
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“Electron-mobility in 2 coupled delta-layers”. Hai, Studart, Peeters FM, Physical review : B : condensed matter and materials physics 52, 11273 (1995). http://doi.org/10.1103/PhysRevB.52.11273
Abstract: The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 25
DOI: 10.1103/PhysRevB.52.11273
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“Electron mobility in two coupled &delta, layers”. Hai GQ, Studart N, Peeters FM, Physical review : B : condensed matter and materials physics 52, 11273 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 24
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“Magnetotransport in a pseudomorhic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si δ-doping layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, van Hove M, Borghs G, Physical review : B : condensed matter and materials physics 52, 12218 (1995)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 35
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“Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si \delta-doping layer”. van der Burgt M, Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, Van Hove M, Borghs G, Physical review : B : condensed matter and materials physics 52, 12218 (1995). http://doi.org/10.1103/PhysRevB.52.12218
Abstract: Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 43
DOI: 10.1103/PhysRevB.52.12218
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“Microscopic theory of orientational disorder and lattice instability in solid C70”. Callebaut AK, Michel KH, Physical review : B : condensed matter and materials physics 52, 15279 (1995). http://doi.org/10.1103/PhysRevB.52.15279
Abstract: We have developed a microscopic theory which describes the orientational dynamics of C-70 molecules and its coupling to lattice displacements in the face-centered-cubic phase of C-70 fullerite. The single-molecule orientational density distribution in the disordered phase is calculated. The ferroelastic transition to the rhombohedral phase is investigated. The discontinuity of the orientational order parameter at the phase transition is calculated. It is found that the transition leads to a stretching of the primitive unit cell along a [111] cubic direction. A softening of the elastic constant c(44) at the transition is predicted.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 20
DOI: 10.1103/PhysRevB.52.15279
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“Structural aspects of AuCu I or AuCu II and a cuboidal black configuration of f.c.c. disordered phase in AuCu-Pt and AuCu-Ag pseudobinary alloys”. Udoh K-I, El- Araby AM, Tanaka Y, Hisatsune K, Yasuda K, Van Tendeloo G, van Landuyt J, Materials science and engineering: part A: structural materials: properties, microstructure and processing 203, 154 (1995). http://doi.org/10.1016/0921-5093(95)09850-X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.567
Times cited: 15
DOI: 10.1016/0921-5093(95)09850-X
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“Magnetopolaron effect on the donor transition energies in ZnSe”. Shi JM, Peeters FM, Devreese JT, Imanaka Y, Miura N, Physical review : B : condensed matter and materials physics 52, 17205 (1995). http://doi.org/10.1103/PhysRevB.52.17205
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 7
DOI: 10.1103/PhysRevB.52.17205
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“Two-dimensional electrons in lateral magnetic superlattices”. Ibrahim IS, Peeters FM, Physical review : B : condensed matter and materials physics 52, 17321 (1995). http://doi.org/10.1103/PhysRevB.52.17321
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 169
DOI: 10.1103/PhysRevB.52.17321
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“Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995). http://doi.org/10.1179/mst.1995.11.11.1194
Abstract: Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 0.995
Times cited: 7
DOI: 10.1179/mst.1995.11.11.1194
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“Point defect reactions in silicon studies in situ by high flux electron irradiation in high voltage transmission electron microscope”. Vanhellemont J, Romano-Rodriguez A, Fedina L, van Landuyt J, Aseev A, Materials science and technology 11, 1194 (1995)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 7
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“Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope”. Fedina L, van Landuyt J, Vanhellemont J, Aseev A, Materials Research Society symposium proceedings 404, 189 (1996)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
Times cited: 1
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“Two electron quantum disks”. Peeters FM, Schweigert VA, Physical review : B : condensed matter and materials physics 53, 1468 (1996). http://doi.org/10.1103/PhysRevB.53.1468
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 204
DOI: 10.1103/PhysRevB.53.1468
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“Vortex structure around a magnetic dot in planar superconductors”. Marmorkos IK, Matulis A, Peeters FM, Physical review : B : condensed matter and materials physics 53, 2677 (1996). http://doi.org/10.1103/PhysRevB.53.2677
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 58
DOI: 10.1103/PhysRevB.53.2677
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“Stability, dynamical properties and melting of a classical bi-layer Wigner crystal”. Goldoni G, Peeters FM, Physical review : B : condensed matter and materials physics 53, 4591 (1996). http://doi.org/10.1103/PhysRevB.53.4591
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 117
DOI: 10.1103/PhysRevB.53.4591
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“Impurity band and magnetic-field-induced metal-insulator transition in a doped GaAs/AlxGa1-xAs superlattice”. Hilber W, Helm M, Peeters FM, Alavi K, Pathak RN, Physical review : B : condensed matter and materials physics 53, 6919 (1996). http://doi.org/10.1103/PhysRevB.53.6919
Abstract: A combination of infrared spectroscopy and magnetotransport is used to investigate the impurity band and the magnetic-field-induced metal-insulator transition in n-type GaAs/AlxGa1-xAs superlattices. The dropping of the Fermi level from the conduction band into the impurity band upon increasing magnetic field is observed in a sample doped to n=4n(c), where n(c) is the critical density according to the Mott criterion. The metal-insulator transition takes place while the Fermi level is in the impurity band, with no qualitative change from the metallic to the insulating side. Due to the anisotropy of the superlattice band structure, the metal-insulator transition is shifted to higher magnetic field, when the magnetic field is tilted away from the growth axis towards the layer planes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 14
DOI: 10.1103/PhysRevB.53.6919
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“D- centers probed by resonant tunneling spectroscopy”. Lok JGS, Geim AK, Maan JC, Marmorkos I, Peeters FM, Mori N, Eaves L, Forster TJ, Main PC, Sakai JW, Henini M, Physical review : B : condensed matter and materials physics 53, 9554 (1996)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 40
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“Symmetry breaking of the admittance of a classical two-dimensional electron system in a magnetic field”. Sommerfeld PKH, van der Heijden RW, Peeters FM, Physical review : B : condensed matter and materials physics 53, R13250 (1996). http://doi.org/10.1103/PhysRevB.53.R13250
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 7
DOI: 10.1103/PhysRevB.53.R13250
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“Monoclinic microdomains and clustering in the colossal magnetoresistance manganites Pr0.7Ca0.25Sr0.05MnO3 and Pr0.75Sr0.25MnO3”. Hervieu M, Van Tendeloo G, Caignaert V, Maignan A, Raveau B, Physical review : B : condensed matter and materials physics 53, 14274 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.736
Times cited: 75
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“Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields”. Bogaerts R, Herlach F, de Keyser A, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, Physical review : B : condensed matter and materials physics 53, 15951 (1996). http://doi.org/10.1103/PhysRevB.53.15951
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 9
DOI: 10.1103/PhysRevB.53.15951
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“Accurate evaluation of \mu-PIXE and \mu-XRF spectral data through iterative least squares fitting”. Janssens K, Vekemans B, Adams F, van Espen P, Mutsaers P, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, 7th International Conference on Particle Induced X-ray Emission and Its Analytical Applications, MAY 26-30, 1995, Abano Terme, Italy 109, 179 (1996). http://doi.org/10.1016/0168-583X(95)01211-7
Abstract: The integration of the nonlinear least squares X-ray spectrum evaluation progam AXIL. into a mu-PIXE and a mu-XRF setup is discussed. The use of the software when procesing data sets derived from biological and geological samples is described.
Keywords: A1 Journal article; Engineering sciences. Technology; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Chemometrics (Mitac 3)
DOI: 10.1016/0168-583X(95)01211-7
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“Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization”. Frangis N, Nejim A, Hemment PLF, Stoemenos J, van Landuyt J, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing –, Fr 112, 325 (1996). http://doi.org/10.1016/0168-583X(95)01236-2
Abstract: The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 9
DOI: 10.1016/0168-583X(95)01236-2
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“Structural phase transition at low temperature, corresponding to charge ordering in the CMR perovskites LN0.5A0.5MNO3”. Laffez P, Van Tendeloo G, Millange F, Caignaert V, Hervieu M, Raveau B, Materials research bulletin 31, 905 (1996). http://doi.org/10.1016/S0025-5408(96)00090-6
Abstract: The magneto resistive perovskites Nd0.5Sr0.5MnO3 and Pr0.5Sr0.41Ca0.09MnO3 undergo a transition from anti ferromagnetic insulator to ferromagnetic metal as function of temperature. The room temperature phase is orthorhombic with the space group Imma and the cell parameters a approximate to root 2a(p), b approximate to 2a(p), and c approximate to root 2a(p). A structural phase transition related to charge ordering accompanying the transition from ferromagnetic state to antiferromagnetic state has been evidenced by low temperature electron diffraction. This transition is reversible and a new superstructure, with a P-type orthorhombic cell. and lattice parameters parameters a approximate to 2 root 2a(p), b approximate to 2a(p), and c approximate to root 2a(p), is formed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.288
Times cited: 25
DOI: 10.1016/S0025-5408(96)00090-6
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“Magneto-polaron effect on shallow indium donors in CdTe”. Grynberg M, Huant S, Martinez G, Kossut J, Wojtowicz T, Karczewski G, Shi JM, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 54, 1467 (1996). http://doi.org/10.1103/PhysRevB.54.1467
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 33
DOI: 10.1103/PhysRevB.54.1467
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“From Bi4V2O11 to Bi4V2O10.66: the VV-VIV transformation in the Aurovillius-type framework”. Huvé, M, Vannier R-N, Nowogrocki G, Mairesse G, Van Tendeloo G, Journal of materials chemistry 6, 1339 (1996). http://doi.org/10.1039/jm9960601339
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 63
DOI: 10.1039/jm9960601339
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“Properties of two-dimensional Coulomb clusters confined in a ring”. Schweigert IV, Schweigert VA, Peeters FM, Physical review : B : condensed matter and materials physics 54, 10827 (1996). http://doi.org/10.1103/PhysRevB.54.10827
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 27
DOI: 10.1103/PhysRevB.54.10827
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