|
“From Bi4V2O11 to Bi4V2O10.66: the VV-VIV transformation in the Aurovillius-type framework”. Huvé, M, Vannier R-N, Nowogrocki G, Mairesse G, Van Tendeloo G, Journal of materials chemistry 6, 1339 (1996). http://doi.org/10.1039/jm9960601339
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 63
DOI: 10.1039/jm9960601339
|
|
|
“The chirality of carbon nanotubules determined by dark-field electron microscopy”. Bernaerts D, op de Beeck M, Amelinckx S, van Landuyt J, Van Tendeloo G, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 74, 723 (1996). http://doi.org/10.1080/01418619608243538
Abstract: Multishell carbon nanotubules are studied by means of diffraction contrast dark field images. This results in an electron microscopy method for the determination of the sign of the chiral angles in carbon nanotubes. The method is justified by a reasoning either in direct space or in diffraction space. We also investigate a carbon nanotubule exhibiting a bend and we confront the observations with the heptagon-pentagon pair model.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 20
DOI: 10.1080/01418619608243538
|
|
|
“Structural defects and epitaxial rotation of C60 and C70 (111) films on GeS(001)”. Bernaerts D, Van Tendeloo G, Amelinckx S, Hevesi K, Gensterblum G, Yu LM, Pireaux JJ, Grey F, Bohr J, Journal of applied physics 80, 3310 (1996). http://doi.org/10.1063/1.363241
Abstract: A transmission electron microscopy study of epitaxial C-60 and C-70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C-60 and C-70 crystals, are studied. Small misalignments of the overlayers with respect to the orientation of the substrate, so-called epitaxial rotations, exist mainly in C-70 films, but also sporadically in the C-60 overlayers. A simple symmetry model, previously used to predict the rotation of hexagonal overlayers on hexagonal substrates, is numerically tested and applied to the present situation. Some qualitative conclusions concerning the substrate-film interaction are deduced. (C) 1996 American Institute of Physics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.183
Times cited: 6
DOI: 10.1063/1.363241
|
|
|
“Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate”. Frangis N, Van Tendeloo G, van Landuyt J, Muret P, Nguyen TTA, Applied surface science 102, 163 (1996). http://doi.org/10.1016/0169-4332(96)00040-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 9
DOI: 10.1016/0169-4332(96)00040-2
|
|
|
“Photoelectric and electrical responses of several erbium silicide/silicon interfaces”. Muret P, Nguyen TTA, Frangis N, Van Tendeloo G, van Landuyt J, Applied surface science
T2 –, International Symposium on Si Heterostructures –, From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE 102, 173 (1996). http://doi.org/10.1016/0169-4332(96)00042-6
Abstract: In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 3
DOI: 10.1016/0169-4332(96)00042-6
|
|
|
“Low- or high-angle Ar ion-beam etching to create ramp-type Josephson junctions”. Verbist K, Lebedev OI, Van Tendeloo G, Verhoeven MAJ, Rijnders AJHM, Blank DHA, Superconductor science and technology 9, 978 (1996). http://doi.org/10.1088/0953-2048/9/11/009
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.325
Times cited: 10
DOI: 10.1088/0953-2048/9/11/009
|
|
|
“Microstructural and physical properties of layered manganite oxides related to the magnetoresistive perovskites”. Laffez P, Van Tendeloo G, Seshadri R, Hervieu M, Martin C, Maignan A, Raveau B, Journal of applied physics 80, 5850 (1996). http://doi.org/10.1063/1.363578
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.183
Times cited: 36
DOI: 10.1063/1.363578
|
|
|
“Microscopic origin of dimerization in the CuO2 chains in Sr14Cu24O41”. Hiroi Z, Amelinckx S, Van Tendeloo G, Kobayashi N, Physical review : B : condensed matter and materials physics 54, 849 (1996). http://doi.org/10.1103/PhysRevB.54.15849
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.736
Times cited: 33
DOI: 10.1103/PhysRevB.54.15849
|
|
|
“New erbium silicide superstructures: a study by high resolution electron microscopy”. Frangis N, Van Tendeloo G, van Landuyt J, Kaltsas G, Travlos A, Nassiopoulos AG, Physica status solidi: A: applied research 158, 107 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 6
|
|
|
“The paraelectric-ferroelectric phase transition of Bi4Ti3O12 studied by electron microscopy”. Nistor L, Van Tendeloo G, Amelinckx S, Phase transitions 59, 135 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.954
Times cited: 6
|
|
|
“133Xe(Cs) Mössbauer measurements on Ar, Ne, Kr, Xe, Rb, and Cs inclusions in W and Mo”. Milants K, Hendrickx P, Verheyden J, Barancira T, Deweerd W, Pattyn H, Bukshpan S, Vermeiren F, Van Tendeloo G, Physical review : B : condensed matter and materials physics 55, 2831 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 2
|
|
|
“Microstructure and flux pinning properties of melt textured grown doped YBa2Cu3O7-\delta”. Monot I, Verbist K, Hervieu M, Laffez P, Delamare MP, Wang J, Desgardin G, Van Tendeloo G, Physica: C : superconductivity 274, 253 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 33
|
|
|
“Size distribution and magnetic behavior of lead inclusions in silicon single crystals”. Milants K, Verheyden J, Barancira T, Deweerd W, Pattyn H, Bukshpan S, Williamson DL, Vermeiren F, Van Tendeloo G, Vlekken C, Libbrecht S, van Haesendonck C, Journal of applied physics 81, 2148 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.068
Times cited: 8
|
|
|
“Ga segregation in DyBa2Cu3O7-\delta/PrBa2Cu3-xGaxO7-\delta/DyBa2Cu3O7-\delta ramp-type Josephson junctions”. Verbist K, Lebedev OI, Van Tendeloo G, Verhoeven MAJ, Rijnders AJHM, Blank DHA, Rogalia H, Applied physics letters 70, 1167 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 8
|
|
|
“Microstructure and formation mechanisms of cylindrical and conical scrolls of the misfit layer compounds PbNbnS2n+1”. Bernaerts D, Amelinckx S, Van Tendeloo G, van Landuyt J, Journal of crystal growth 172, 433 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 23
|
|
|
“Structural properties of c-axis oriented epitaxial YBa2Cu3O7-\delta thin films”. Ye M, Schroeder J, Deltour R, Delplancke MP, Winand R, Verbist K, Van Tendeloo G, Superlattices and microstructures 21, 287 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.123
|
|
|
“Decomposition of a metastable bcc phase in rapidly solidified Ni-9 at.% Zr and Ni-8 at.%X alloys”. Chandrasekaran M, Ghosh G, Schryvers D, de Graef M, Delaey L, Van Tendeloo G, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 75, 677 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 5
|
|
|
“Short-range order in phase segregation systems”. De Meulenaere P, Mommaert C, Van Tendeloo G, Solid state communications 102, 687 (1997). http://doi.org/10.1016/S0038-1098(97)00071-9
Abstract: Spin systems on an f.c.c.-lattice which exhibit phase segregation are studied by means of Monte Carlo simulations. Short-range order, both above and below the segregation temperature, is observed. Experimental evidence for short range order in Ti-V is provided by electron diffraction.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.554
DOI: 10.1016/S0038-1098(97)00071-9
|
|
|
“Microstructure of YBa2Cu3O7-x films on buffered Si for microelectronic applications”. Vasiliev AL, Van Tendeloo G, Boikov Y, Olsson E, Ivanov S, Superconductor science and technology 10, 356 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.878
Times cited: 2
|
|
|
“First evidence of synthetic polygonal serpentines”. Devouard B, Baronnet A, Van Tendeloo G, Amelinckx S, European journal of mineralogy 9, 539 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.362
Times cited: 15
|
|
|
“Room temperature (2a x 2b) superstructure formed in Sr-submitted Bi2(Sr1.6Y0.4)CaCu2Oy single crystals”. Zhang XF, Van Tendeloo G, Hu DW, Brabers VAM, Physica: C : superconductivity 278, 31 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
|
|
|
“Real-space characterization of short-range order in Cu-Pd alloys”. Rodewald M, Rodewald K, De Meulenaere P, Van Tendeloo G, Physical review : B : condensed matter and materials physics 55, 14173 (1997). http://doi.org/10.1103/PhysRevB.55.14173
Abstract: Cu-Pd alloys containing 10, 20, 30, 40, and 50 at. % Pd and quenched from a temperature just above the ordering temperature T-c are investigated by electron diffraction and high-resolution electron microscopy (HREM). The results show diffuse electron diffraction intensities at {100} and {110} positions for the alloy with 10 at. % Pd, but with a characteristic twofold and fourfold splitting for the alloys with more than 10 at. % Pd. High-resolution images show the formation of microdomains best developed between 20 and 30 at. % Pd. A real-space characterization has been performed by applying videographic real-structure simulations revealing that the splitting of the diffuse maxima depends on the average distance between microdomains of Cu3Au type in antiphase with each other. By applying image processing routines on the HREM images, correlation vectors are identified which correspond to correlations between microdomains.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 15
DOI: 10.1103/PhysRevB.55.14173
|
|
|
“Molecular beam epitaxy and microstructural study of La2-xSr1+xCu2O6+y thin films”. Verbist K, Milat O, Van Tendeloo G, Arrouy F, Williams EJ, Rossel C, Machler E, Locquet J-P, Physical review : B : condensed matter and materials physics 56, 853 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 2
|
|
|
“Characterisation of multilayer ramp-type REBa2Cu3O7-\delta structures by scanning probe microscopy and high-resolution electron microscopy”. Blank DHA, Rijnders AJHM, Verhoeven MAJ, Bergs RMH, Rogalla H, Verbist K, Lebedev O, Van Tendeloo G, Journal of alloys and compounds
T2 –, Symposium on High Temperature Superconductor Thin Films, Growth, Mechanisms, Interfaces, Multilayers, at the 1996 Spring Meeting of the European-Materials-Society, June 04-07, 1996, Strasbourg, France 251, 206 (1997). http://doi.org/10.1016/S0925-8388(96)02799-5
Abstract: We studied the morphology of ramps in REBa2CU3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TIN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence, Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBa2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, con even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 3.133
DOI: 10.1016/S0925-8388(96)02799-5
|
|
|
“Microstructure of Mn-doped, spin-cast FeSi2”. Morimura T, Frangis N, Van Tendeloo G, van Landuyt J, Hasaka M, Hisatsune K, Journal of electron microscopy 46, 221 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 3
|
|
|
“The crystal structure of Ca3ReO6”. Abakumov AM, Shpanchenko RV, Antipov EV, Lebedev OI, Van Tendeloo G, Journal of solid state chemistry 131, 305 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 10
|
|
|
“Inducing superconductivity and structural transformations by fluorination of reduced YBCO”. Shpanchenko RV, Rozova MG, Abakumov AM, Ardashnikova EI, Kovba ML, Putilin SN, Antipov EV, Lebedev OI, Van Tendeloo G, Physica: C : superconductivity 280, 272 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.404
Times cited: 35
|
|
|
“Cation ordering in [(Tl, M)O] layers of “1202”-based cuprates : similarity to ordering in fcc-based alloys”. Van Tendeloo G, De Meulenaere P, Letouzé, F, Martin C, Hervieu M, Raveau B, Journal of solid state chemistry 132, 113 (1997). http://doi.org/10.1006/jssc.1997.7418
Abstract: ''1201'' Tl-based substituted cuprates of the type (Tl1-xMx) Sr2CuO5 have been synthesized for M = Nb, Ta, or W. These materials do not superconduct due to a statistical distribution of some of the M for Cu. The remarkable feature of these materials is the ordering observed between Tl and M in the (Tl1-xMx-epsilon)O plane. The type of ordering depends on the composition and shows remarkable similarities with the ordering in Ni-Mo or other so-called 1 1/2 0 type fcc-based alloys or with the ordering in rocksalt oxides TiOx. The short-range order, for M = W, can be readily interpreted in terms of a mixing of nano-clusters with two different compositions. These observations of two-dimensional ordering confirm recent ideas about ordering in three-dimensional fcc-based alloys.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.299
Times cited: 2
DOI: 10.1006/jssc.1997.7418
|
|
|
“Structural phase transition in the manganite Nd0.5Ca0.2Sr0.3MnO3-\delta”. Hervieu M, Van Tendeloo G, Schuddinck W, Richard O, Caignaert V, Millange F, Raveau B, Journal of electron microscopy 46, 263 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 2
|
|
|
“HREM study of ion implantation in 6H-SiC at high temperatures”. Lebedev OI, Van Tendeloo G, Suvorova AA, Usov IO, Suvorov AV, Journal of electron microscopy 46, 271 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.9
Times cited: 7
|
|