Abstract: The high temperature phase of Ni1-xS has the NiAs-type structure. The coexistence of two superstructures, ''3a3a3c'' and ''2a2a3c'' with the basic phase is confirmed by means of electron diffraction. The 2a2a3c superstructure is studied by means of electron diffraction and high resolution electron microscopy. A structure model is proposed based on the periodic insertion of stacking faults in the NiAs-type basic structure and the ordering of vacancies in alternate metal-atom layers. Microtwinning in very narrow slabs is found to be a main feature of the 2a2a3c regions and two defect models are discussed.

Abstract: The crystal field in the orientationally disordered phase of C90-fullerite is derived from an intermolecular potential model, which takes into account the geometric difference between double bonds and single bonds. The molecules are modelled as rigid bodies, atoms and single bonds are treated as single interaction centers, while double bonds are described by a distribution of interaction centers along the bond. The crystal field is expanded in terms of cubic rotator functions. The calculated expansion coefficients are compared with empirical values derived from diffraction data. The angular dependence of the crystal field, resulting from an anticlockwise rotation of the molecule around the [111] axis, exhibits an absolute and a secondary minimum at angles of 98-degrees and 38-degrees respectively. The self interaction of the molecule in a deformable lattice is investigated.

Abstract: http://dx.doi.org/doi:10.1103/PhysRevLett.70.2146

Abstract: The structure of the metastable Ni2Al phase, which has long been a matter of controversy, has been carefully re-examined by means of high-resolution transmission electron microscopy (HREM) and electron microdiffraction. First, it is concluded that theas-quenched NixAl100-x(60 less-than-or-equal-to x less-than-or-equal-to 65) material already exhibits a partial omega-type collapse in a one-dimensional fashion which and is consistent with the anomalous dip in the phonon dispersion curve. Ni2Al precipitates are formed on annealing by thermal decomposition of the high-temperature NixAl100-xB2 phase and still retain the small omega-type shuffle. The amount of displacement in the well developed Ni2Al phase was estimated to be between 20 and 50% of the ideal omega collapse; this was determined by means of a combined technique of HREM and microdiffraction together with dynamical calculations of HREM images and diffraction intensities.

Abstract: It is shown that the infrared absorption spectra of pure type IaB diamonds, namely those that on cursory examination show only a B one-phonon component and neither A nor D, and the complete absence of a B' localized-mode platelet absorption peak, may be divided into two subgroups. The defect content of specimens of one of these subgroups has been studied before and comprises slip dislocations and voidites in random homogeneous distributions unconnected with the transformation of platelets to dislocation loops. Electron microscopy of a specimen of the other subgroup, which may be recognized by the presence of weak additional one-phonon absorption near 1100 cm-1, shows a population of dislocation loops resulting from the complete transformation of a former platelet population, plus accompanying voidites. It is suggested that the extra absorption is caused by the dislocation loops. Observation of the way in which loops and voidites are distributed suggests that voidite production and platelet transformation may not, after all, be interlinked phenomena, but parallel independent processes both promoted by the same unknown conditions.

Abstract: The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE.

Abstract: When the energy difference between two electric subbands in a quasi-two-dimensional electron system equals a LO-phonon energy, resonant scattering will occur. This leads to an enhancement of the scattering rate and, consequently, to a suppression of the conductivity. Changing the energy difference between the electric subbands (e.g., through a gate) leads to a series of electrophonon resonances in the conductivity. A detailed study is made of this effect for different confinement potentials. We found that the scattering processes where the emission of a phonon is involved are very important for the electrophonon resonance and that the size of the effect decreases with increasing temperature.