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“High-strain-induced local modification of the electronic properties of VO₂, thin films”. Birkholzer YA, Sotthewes K, Gauquelin N, Riekehr L, Jannis D, van der Minne E, Bu Y, Verbeeck J, Zandvliet HJW, Koster G, Rijnders G, ACS applied electronic materials 4, 6020 (2022). http://doi.org/10.1021/ACSAELM.2C01176
Abstract: Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long- and short-range elastic distortions, as well as the symmetry change and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue toward mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO2 while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO2-metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO2. The tunneling barrier is formed by a very thin but persistently insulating surface layer of the VO2. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto unexplored regime. Our study provides valuable information on pressure-induced electronic modifications of the VO2 properties, as well as on nanoscale metal-oxide contacts, which can help in the future design of oxide electronics.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1021/ACSAELM.2C01176
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“Enhanced local magnetization by interface engineering in perovskite-type correlated oxide heterostructures”. Huijben M, Liu Y, Boschker H, Lauter V, Egoavil R, Verbeeck J, te Velthuis SGE, Rijnders G, Koster G, Advanced Materials Interfaces 2, 1400416 (2015). http://doi.org/10.1002/admi.201400416
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.279
Times cited: 30
DOI: 10.1002/admi.201400416
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“Domain Selectivity in BiFeO3Thin Films by Modified Substrate Termination”. Solmaz A, Huijben M, Koster G, Egoavil R, Gauquelin N, Van Tendeloo G, Verbeeck J, Noheda B, Rijnders G, Advanced functional materials 26, 2882 (2016). http://doi.org/10.1002/adfm.201505065
Abstract: Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial role in attaining unique ferroelectric and magnetic properties. In this study, controlled ordering of domains in BiFeO3 film is presented, as well as a controlled selectivity between two types of domain walls is presented, i.e., 71° and 109°, by modifying the substrate termination. The experiments on two different substrates, namely SrTiO3 and TbScO3, strongly indicate that the domain selectivity is determined by the growth kinetics of the initial BiFeO3 layers.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 34
DOI: 10.1002/adfm.201505065
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“On the importance of the work function and electron carrier density of oxide electrodes for the functional properties of ferroelectric capacitors”. Wang J, Nguyen MD, Gauquelin N, Verbeeck J, Do MT, Koster G, Rijnders G, Houwman E, Physica Status Solidi-Rapid Research Letters 14, 1900520 (2020). http://doi.org/10.1002/PSSR.201900520
Abstract: It is important to understand the effect of the interfaces between the oxide electrode layers and the ferroelectric layer on the polarization response for optimizing the device performance of all-oxide ferroelectric devices. Herein, the effects of the oxide La0.07Ba0.93SnO3 (LBSO) as an electrode material in an PbZr0.52Ti0.48O3 (PZT) ferroelectric capacitor are compared with those of the more commonly used SrRuO3 (SRO) electrode. SRO (top)/PZT/SRO (bottom), SRO/PZT/LBSO, and SRO/PZT/2 nm SRO/LBSO devices are fabricated. Only marginal differences in crystalline properties, determined by X-ray diffraction and scanning transmission electron microscopy, are found. High-quality polarization loops are obtained, but with a much larger coercive field for the SRO/PZT/LBSO device. In contrast to the SRO/PZT/SRO device, the polarization decreases strongly with increasing field cycling. This fatigue problem can be remedied by inserting a 2 nm SRO layer between PZT and LBSO. It is argued that strongly increased charge injection into the PZT occurs at the bottom interface, because of the low PZT/LBSO interfacial barrier and the much lower carrier density in LBSO, as compared with that in SRO, causing a low dielectric constant, depleted layer in LBSO. The charge injection creates a trapped space charge in the PZT, causing the difference in fatigue behavior.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.8
Times cited: 6
DOI: 10.1002/PSSR.201900520
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“Strain-engineered metal-to-insulator transition and orbital polarization in nickelate superlattices integrated on silicon”. Chen B, Gauquelin N, Jannis D, Cunha DM, Halisdemir U, Piamonteze C, Lee JH, Belhadi J, Eltes F, Abel S, Jovanovic Z, Spreitzer M, Fompeyrine J, Verbeeck J, Bibes M, Huijben M, Rijnders G, Koster G, Advanced Materials , 2004995 (2020). http://doi.org/10.1002/ADMA.202004995
Abstract: Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni 3dx2-y2 orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 29.4
Times cited: 18
DOI: 10.1002/ADMA.202004995
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