“Enhanced self-assembly of metal oxides and metal-organic frameworks from precursors with magnetohydrodynamically induced long-lived collective spin states”. Breynaert E, Emmerich J, Mustafa D, Bajpe SR, Altantzis T, Van Havenbergh K, Taulelle F, Bals S, Van Tendeloo G, Kirschhock CEA, Martens JA;, Advanced materials 26, 5173 (2014). http://doi.org/10.1002/adma.201400835
Abstract: Magneto-hydrodynamic generation of long-lived collective spin states and their impact on crystal morphology is demonstrated for three different, technologically relevant materials: COK-16 metal organic framework, manganese oxide nanotubes, and vanadium oxide nano-scrolls.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 7
DOI: 10.1002/adma.201400835
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“Global and local superconductivity in boron-doped granular diamond”. Zhang G, Turner S, Ekimov EA, Vanacken J, Timmermans M, Samuely T, Sidorov VA, Stishov SM, Lu Y, Deloof B, Goderis B, Van Tendeloo G, Van de Vondel J, Moshchalkov VV;, Advanced materials 26, 2034 (2014). http://doi.org/10.1002/adma.201304667
Abstract: Strong granularity-correlated and intragrain modulations of the superconducting order parameter are demonstrated in heavily boron-doped diamond situated not yet in the vicinity of the metal-insulator transition. These modulations at the superconducting state (SC) and at the global normal state (NS) above the resistive superconducting transition, reveal that local Cooper pairing sets in prior to the global phase coherence.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 34
DOI: 10.1002/adma.201304667
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“A hard oxide semiconductor with a direct and narrow bandgap and switchable pn electrical conduction”. Ovsyannikov SV, Karkin AE, Morozova NV, Shchennikov VV, Bykova E, Abakumov AM, Tsirlin AA, Glazyrin KV, Dubrovinsky L, Advanced materials 26, 8185 (2014). http://doi.org/10.1002/adma.201403304
Abstract: An oxide semiconductor (perovskite-type Mn2O3) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 27
DOI: 10.1002/adma.201403304
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“Interface-induced modulation of charge and polarization in thin film Fe3O4”. Tian H, Verbeeck J, Brück S, Paul M, Kufer D, Sing M, Claessen R, Van Tendeloo G, Advanced materials 26, 461 (2014). http://doi.org/10.1002/adma.201303329
Abstract: Charge and polarization modulations in Fe3O4 are controlled by taking advantage of interfacial strain effects. The feasibility of oxidation state control by strain modification is demonstrated and it is shown that this approach offers a stable configuration at room temperature. Direct evidence of how a local strain field changes the atomic coordination and introduces atomic displacements leading to polarization of Fe ions is presented.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 15
DOI: 10.1002/adma.201303329
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“Element Specific Monolayer Depth Profiling”. Macke S, Radi A, Hamann-Borrero JE, Verna A, Bluschke M, Brück S, Goering E, Sutarto R, He F, Cristiani G, Wu M, Benckiser E, Habermeier H-U, Logvenov G, Gauquelin N, Botton GA, Kajdos AP, Stemmer S, Sawatzky GA, Haverkort MW, Keimer B, Hinkov V, Advanced Materials 26, 6554 (2014). http://doi.org/10.1002/adma.201402028
Abstract: The electronic phase behavior and functionality of interfaces and surfaces in complex materials are strongly correlated to chemical composition profiles, stoichiometry and intermixing. Here a novel analysis scheme for resonant X-ray reflectivity maps is introduced to determine such profiles, which is element specific and non-destructive, and which exhibits atomic-layer resolution and a probing depth of hundreds of nanometers.
Keywords: A1 Journal Article; Electron Microscopy for Materials Science (EMAT)
Impact Factor: 19.791
Times cited: 34
DOI: 10.1002/adma.201402028
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“Mn2FeWO6 : a new Ni3TeO6-type polar and magnetic oxide”. Li MR, Croft M, Stephens PW, Ye M, Vanderbilt D, Retuerto M, Deng Z, Grams CP, Hemberger J, Hadermann J, Li WM, Jin CQ, Saouma FO, Jang JI, Akamatsu H, Gopalan V, Walker D, Greenblatt M;, Advanced materials 27, 2177 (2015). http://doi.org/10.1002/adma.201405244
Abstract: Mn22+Fe2+W6+O6, a new polar magnetic phase, adopts the corundum-derived Ni3TeO6-type structure with large spontaneous polarization (P-S) of 67.8 mu C cm-2, complex antiferromagnetic order below approximate to 75 K, and field-induced first-order transition to a ferrimagnetic phase below approximate to 30 K. First-principles calculations predict a ferrimagnetic (udu) ground state, optimal switching path along the c-axis, and transition to a lower energy udu-udd magnetic double cell.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 32
DOI: 10.1002/adma.201405244
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“A Universal Deposition Protocol for Planar Heterojunction Solar Cells with High Efficiency Based on Hybrid Lead Halide Perovskite Families”. Conings B, Babayigit A, Klug M T, Bai S, Gauquelin N, Sakai N, Wang J T-W, Verbeeck J, Boyen H-G, Advanced materials 28, 10701 (2016). http://doi.org/10.1002/adma.201603747
Abstract: A robust and expedient gas quenching method is developed for the solution deposition of hybrid perovskite thin films. The method offers a reliable standard practice for the fabrication of a non-exhaustive variety of perovskites exhibiting excellent film morphology and commensurate high performance in both regular and inverted structured solar cell architectures.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 95
DOI: 10.1002/adma.201603747
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“Imaging heterogeneously distributed photo-active traps in perovskite single crystals”. Yuan H, Debroye E, Bladt E, Lu G, Keshavarz M, Janssen KPF, Roeffaers MBJ, Bals S, Sargent EH, Hofkens J, Advanced materials 30, 1705494 (2018). http://doi.org/10.1002/ADMA.201705494
Abstract: Organic-inorganic halide perovskites (OIHPs) have demonstrated outstanding energy conversion efficiency in solar cells and light-emitting devices. In spite of intensive developments in both materials and devices, electronic traps and defects that significantly affect their device properties remain under-investigated. Particularly, it remains challenging to identify and to resolve traps individually at the nanoscopic scale. Here, photo-active traps (PATs) are mapped over OIHP nanocrystal morphology of different crystallinity by means of correlative optical differential super-resolution localization microscopy (Delta-SRLM) and electron microscopy. Stochastic and monolithic photoluminescence intermittency due to individual PATs is observed on monocrystalline and polycrystalline OIHP nanocrystals. Delta-SRLM reveals a heterogeneous PAT distribution across nanocrystals and determines the PAT density to be 1.3 x 10(14) and 8 x 10(13) cm(-3) for polycrystalline and for monocrystalline nanocrystals, respectively. The higher PAT density in polycrystalline nanocrystals is likely related to an increased defect density. Moreover, monocrystalline nanocrystals that are prepared in an oxygen and moisture-free environment show a similar PAT density as that prepared at ambient conditions, excluding oxygen or moisture as chief causes of PATs. Hence, it is conduded that the PATs come from inherent structural defects in the material, which suggests that the PAT density can be reduced by improving crystalline quality of the material.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 29
DOI: 10.1002/ADMA.201705494
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“Spontaneous self-assembly of Perovskite nanocrystals into electronically coupled supercrystals : toward filling the green gap”. Tong Y, Yao E-P, Manzi A, Bladt E, Wang K, Doeblinger M, Bals S, Mueller-Buschbaum P, Urban AS, Polavarapu L, Feldmann J, Advanced materials 30, 1801117 (2018). http://doi.org/10.1002/ADMA.201801117
Abstract: Self-assembly of nanoscale building blocks into ordered nanoarchitectures has emerged as a simple and powerful approach for tailoring the nanoscale properties and the opportunities of using these properties for the development of novel optoelectronic nanodevices. Here, the one-pot synthesis of CsPbBr3 perovskite supercrystals (SCs) in a colloidal dispersion by ultrasonication is reported. The growth of the SCs occurs through the spontaneous self-assembly of individual nanocrystals (NCs), which form in highly concentrated solutions of precursor powders. The SCs retain the high photoluminescence (PL) efficiency of their NC subunits, however also exhibit a redshifted emission wavelength compared to that of the individual nanocubes due to interparticle electronic coupling. This redshift makes the SCs pure green emitters with PL maxima at approximate to 530-535 nm, while the individual nanocubes emit a cyan-green color (approximate to 512 nm). The SCs can be used as an emissive layer in the fabrication of pure green light-emitting devices on rigid or flexible substrates. Moreover, the PL emission color is tunable across the visible range by employing a well-established halide ion exchange reaction on the obtained CsPbBr3 SCs. These results highlight the promise of perovskite SCs for light emitting applications, while providing insight into their collective optical properties.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 161
DOI: 10.1002/ADMA.201801117
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“Homojunction of oxygen and titanium vacancies and its interfacial n-p effect”. Wu S-M, Liu X-L, Lian X-L, Tian G, Janiak C, Zhang Y-X, Lu Y, Yu H-Z, Hu J, Wei H, Zhao H, Chang G-G, Van Tendeloo G, Wang L-Y, Yang X-Y, Su B-L, Advanced materials 30, 1802173 (2018). http://doi.org/10.1002/ADMA.201802173
Abstract: The homojunction of oxygen/metal vacancies and its interfacial n-p effect on the physiochemical properties are rarely reported. Interfacial n-p homojunctions of TiO2 are fabricated by directly decorating interfacial p-type titanium-defected TiO2 around n-type oxygen-defected TiO2 nanocrystals in amorphous-anatase homogeneous nanostructures. Experimental measurements and theoretical calculations on the cell lattice parameters show that the homojunction of oxygen and titanium vacancies changes the charge density of TiO2; a strong EPR signal caused by oxygen vacancies and an unreported strong titanium vacancies signal of 2D H-1 TQ-SQ MAS NMR are present. Amorphous-anatase TiO2 shows significant performance regarding the photogeneration current, photocatalysis, and energy storage, owing to interfacial n-type to p-type conductivity with high charge mobility and less structural confinement of amorphous clusters. A new homojunction of oxygen and titanium vacancies concept, characteristics, and mechanism are proposed at an atomic-/nanoscale to clarify the generation of oxygen vacancies and titanium vacancies as well as the interface electron transfer.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 39
DOI: 10.1002/ADMA.201802173
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“Electrostatic force-driven oxide heteroepitaxy for interface control”. Ren Z, Wu M, Chen X, Li W, Li M, Wang F, Tian H, Chen J, Xie Y, Mai J, Li X, Lu X, Lu Y, Zhang H, Van Tendeloo G, Zhang Z, Han G, Advanced materials 30, 1707017 (2018). http://doi.org/10.1002/ADMA.201707017
Abstract: Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low-temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid-liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 4
DOI: 10.1002/ADMA.201707017
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“A Facet-Specific Quantum Dot Passivation Strategy for Colloid Management and Efficient Infrared Photovoltaics”. Kim Y, Che F, Jo JW, Choi J, de Arquer FPG, Voznyy O, Sun B, Kim J, Choi M-J, Quintero-Bermudez R, Fan F, Tan CS, Bladt E, Walters G, Proppe AH, Zou C, Yuan H, Bals S, Hofkens J, Roeffaers MBJ, Hoogland S, Sargent EH, Advanced materials 31, 1805580 (2019). http://doi.org/10.1002/ADMA.201805580
Abstract: Colloidal nanocrystals combine size- and facet-dependent properties with solution processing. They offer thus a compelling suite of materials for technological applications. Their size- and facet-tunable features are studied in synthesis; however, to exploit their features in optoelectronic devices, it will be essential to translate control over size and facets from the colloid all the way to the film. Larger-diameter colloidal quantum dots (CQDs) offer the attractive possibility of harvesting infrared (IR) solar energy beyond absorption of silicon photovoltaics. These CQDs exhibit facets (nonpolar (100)) undisplayed in small-diameter CQDs; and the materials chemistry of smaller nanocrystals fails consequently to translate to materials for the short-wavelength IR regime. A new colloidal management strategy targeting the passivation of both (100) and (111) facets is demonstrated using distinct choices of cations and anions. The approach leads to narrow-bandgap CQDs with impressive colloidal stability and photoluminescence quantum yield. Photophysical studies confirm a reduction both in Stokes shift (approximate to 47 meV) and Urbach tail (approximate to 29 meV). This approach provides a approximate to 50% increase in the power conversion efficiency of IR photovoltaics compared to controls, and a approximate to 70% external quantum efficiency at their excitonic peak.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 74
DOI: 10.1002/ADMA.201805580
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“Diluted oxide interfaces with tunable ground states”. Gan Y, Christensen DV, Zhang Y, Zhang H, Krishnan D, Zhong Z, Niu W, Carrad DJ, Norrman K, von Soosten M, Jespersen TS, Shen B, Gauquelin N, Verbeeck J, Sun J, Pryds N, Chen Y, Advanced materials 31, 1805970 (2019). http://doi.org/10.1002/ADMA.201805970
Abstract: The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial properties such as the ground state and metal-insulator transitions remains challenging. Here, an unforeseen tunability of the phase diagram of LAO/STO is reported by alloying LAO with a ferromagnetic LaMnO3 insulator without forming lattice disorder and at the same time without changing the polarity of the system. By increasing the Mn-doping level, x, of LaAl1-xMnxO3/STO (0 <= x <= 1), the interface undergoes a Lifshitz transition at x = 0.225 across a critical carrier density of n(c) = 2.8 x 10(13) cm(-2), where a peak T-SC approximate to 255 mK of superconducting transition temperature is observed. Moreover, the LaAl1-xMnxO3 turns ferromagnetic at x >= 0.25. Remarkably, at x = 0.3, where the metallic interface is populated by only d(xy) electrons and just before it becomes insulating, a same device with both signatures of superconductivity and clear anomalous Hall effect (7.6 x 10(12) cm(-2) < n(s) <= 1.1 x 10(13) cm(-2)) is achieved reproducibly. This provides a unique and effective way to tailor oxide interfaces for designing on-demand electronic and spintronic devices.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 31
DOI: 10.1002/ADMA.201805970
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“Liquid-alloy-assisted growth of 2D ternaryGa2In4S9 toward high-performance UV photodetection”. Wang F, Gao T, Zhang Q, Hu Z-Y, Jin B, Li L, Zhou X, Li H, Van Tendeloo G, Zhai T, Advanced materials 31, 1806306 (2019). http://doi.org/10.1002/ADMA.201806306
Abstract: 2D ternary systems provide another degree of freedom of tuning physical properties through stoichiometry variation. However, the controllable growth of 2D ternary materials remains a huge challenge that hinders their practical applications. Here, for the first time, by using a gallium/indium liquid alloy as the precursor, the synthesis of high-quality 2D ternary Ga2In4S9 flakes of only a few atomic layers thick (approximate to 2.4 nm for the thinnest samples) through chemical vapor deposition is realized. Their UV-light-sensing applications are explored systematically. Photodetectors based on the Ga2In4S9 flakes display outstanding UV detection ability (R-lambda = 111.9 A W-1, external quantum efficiency = 3.85 x 10(4)%, and D* = 2.25 x 10(11) Jones@360 nm) with a fast response speed (tau(ring) approximate to 40 ms and tau(decay) approximate to 50 ms). In addition, Ga2In4S9-based phototransistors exhibit a responsivity of approximate to 10(4) A W-1@360 nm above the critical back-gate bias of approximate to 0 V. The use of the liquid alloy for synthesizing ultrathin 2D Ga2In4S9 nanostructures may offer great opportunities for designing novel 2D optoelectronic materials to achieve optimal device performance.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 19.791
Times cited: 29
DOI: 10.1002/ADMA.201806306
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