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“Lattice deformations at martensite-martensite interfaces in Ni-Al”. Schryvers D, Boullay P, Kohn R, Ball J, Journal de physique: 4 11, 23 (2001). http://doi.org/10.1051/jp4:2001804
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 9
DOI: 10.1051/jp4:2001804
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“Microstructure of quenched Ni-rich Ni-Ti shape memory alloys”. Somsen C, Kästner J, Wassermann EF, Boullay P, Schryvers D, Journal de physique: 4
T2 –, 8th European Symposium on Martensitic Transformations (ESOMAT2000), SEP 04-08, 2000, COMO, ITALY 11, 445 (2001). http://doi.org/10.1051/jp4:2001874
Abstract: Microstructural investigations with transmission electron microscopy were carried out on quenched Ni-Ti alloys with 52 and 54.5 at% Ni. For the Ni52Ti48 specimen long time exposed diffraction patterns of a single grain show besides the expected reflections of the B2-phase, two sets of extra reflections in different zones. The first type of spots is explained by lattice displacement waves, which are regarded as precursors of the martensitic Ni-Ti phases, B 19' and R-phase, respectively. The second set of reflection with more diffuse intensity than the other reflections is related to Ni4Ti3 precipitates in an early state of formation. For the Ni-richer Ni54.5Ti45.5 alloy only Ni4Ti3 precipitates in an early state of formation are found but no precursors of the B 19'- and R-phase.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1051/jp4:2001874
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“Nanoscale inhomogeneities in melt-spun Ni-Al”. Potapov P, Ochin P, Pons J, Schryvers D, Journal de physique: 4 11, 439 (2001). http://doi.org/10.1051/jp4:2001873
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
DOI: 10.1051/jp4:2001873
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“Structural characterisation of melt-spun Ti-Ni-Cu-ribbons”. Schryvers D, Potapov P, Ledda A, Shelyakov A, Journal de physique: 4 11, 363 (2001). http://doi.org/10.1051/jp4:2001861
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 1
DOI: 10.1051/jp4:2001861
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“The influence of the h-BN morphology and structure on the c-BN growth”. Nistor L, Teodorescu V, Ghica C, van Landuyt J, Dinca G, Georgeoni P, Diamond and related materials
T2 –, 11th European Conference on Diamond, Diamond-like Materials, Carbon, Nanotubes, Nitrides and Silicon Carbide (Diamond 2000), SEP 03-08, 2000, OPORTO, PORTUGAL 10, 1352 (2001). http://doi.org/10.1016/S0925-9635(00)00377-0
Abstract: The morphology and structure of hexagonal graphitic BN (h-BN) powders with graphitization indices GI <5, used as precursors for the synthesis of cubic BN (c-BN) crystals, has been investigated by transmission electron microscopy in diffraction contrast and high resolution. We show that besides the GI, which is a general parameter for controlling the structural quality of h-EN ponders, some other microstructural features strongly influence the synthesis of c-BN. In our opinion, the high reactivity of some h-BN powders results from the presence of some nucleation centers for c-BN, observed at the edges of the h-BN particles. They are formed by a rearrangement of the graphitic (0002) planes by bending back, joining in pairs and forming locally nanoarches (half nanotubes). In these particular places, the nature of bonding locally turns towards sp(3), as in the case of c-BN, (C) 2001 Elsevier Science B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.561
Times cited: 17
DOI: 10.1016/S0925-9635(00)00377-0
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“Phase transformations and precipitation in amorphous Ti50Ni25Cu25 ribbons”. Satto C, Ledda A, Potapov P, Janssens JF, Schryvers D, Intermetallics 9, 395 (2001). http://doi.org/10.1016/S0966-9795(01)00015-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.14
Times cited: 16
DOI: 10.1016/S0966-9795(01)00015-2
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“Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy”. Hens S, van Landuyt J, Bender H, Boullart W, Vanhaelemeersch S, Materials science in semiconductor processing 4, 109 (2001). http://doi.org/10.1016/S1369-8001(00)00147-5
Abstract: The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
DOI: 10.1016/S1369-8001(00)00147-5
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“The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, Rooyackers R, Badenes G, Materials science in semiconductor processing 4, 117 (2001). http://doi.org/10.1016/S1369-8001(00)00110-4
Abstract: Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
Times cited: 6
DOI: 10.1016/S1369-8001(00)00110-4
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“Misfit accommodation of epitaxial La1-xAxMnO3 (A=Ca, Sr) thin films”. Lebedev OI, Van Tendeloo G, Amelinckx S, International journal of inorganic materials 3, 1331 (2001). http://doi.org/10.1016/S1466-6049(01)00155-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1016/S1466-6049(01)00155-6
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“X-ray fluorescence microtomography”. Chukalina M, Simionovici AS, Snigirev A, Drakopoulos M, Snigireva I, Adams F, Janssens K, Poverhnost 3, 40 (2001)
Keywords: A3 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Environmental conditions controlling the chemical weathering of the Madara Horseman monument, NE Bulgaria”. Delalieux F, Cardell C, Todorov V, Dekov V, Van Grieken R, Journal of cultural heritage 2, 43 (2001)
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Atomic scale characterization of supported and assembled nanoparticles”. Pauwels B, Yandouzi M, Schryvers D, Van Tendeloo G, Verschoren G, Lievens P, Hou M, van Swygenhoven H, , B8.3 (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Atomic scale modeling of supported and assembled nanoparticles”. Zhurkin E, Hou M, van Swygenhoven H, Pauwels B, Yandouzi M, Schryvers D, Van Tendeloo G, Lievens P, Verschoren G, Kuriplach J, van Peteghem S, Segers D, Dauwe C, , B8.2 (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Catalyst traces after chemical purification in CVD grown carbon nanotubes”. Biró, LP, Khanh NQ, Horváth ZE, Vértesy Z, Kocsonya A, Konya Z, Osváth Z, Koós A, Guylai J, Zhang XB, Van Tendeloo G, Fonseca A, Nagy JB, , 183 (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation”. Stuer C, Steegen A, van Landuyt J, Bender H, Maex K, Institute of physics conference series , 481 (2001)
Abstract: With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Correlation between a remote electron and a two-dimensional electron gas in resonant tunneling devices”. Kato H, Peeters FM, , 843 (2001)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Density functional theory approach to artificial molecules”. Partoens B, Peeters FM, , 128 (2001)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“EFTEM study of plasma etched low-k Si-O-C dielectrics”. Hens S, Bender H, Donaton RA, Maex K, Vanhaelemeersch S, van Landuyt J, Institute of physics conference series
T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND , 415 (2001)
Abstract: Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Enhanced spin and isospin blockade in two vertically coupled quantum dots”. Partoens B, Peeters FM, , 1035 (2001)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“High energy transitions and phonon-assisted harmonics of a shallow magneto-donor in GaAs/AlGaAs multiple quantum wells”. Bruno-Alfonso A, Hai G-Q, Peeters FM, Yeo T, Ryu SR, McCombe BD, , 1413 (2001)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“HREM investigation of a Fe/GaN/Fe tunnel junction”. Nistor L, Bender H, van Landuyt J, Nemeth S, Boeve H, De Boeck J, Borghs G, Institute of physics conference series
T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England , 53 (2001)
Abstract: The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Interactions between DC plasma and HF fields”. Cenian A, Chernukho A, Leys C, Bogaerts A, , 389 (2001)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Large scale synthesis of carbon nanotubes and their composite materials”. Nagy JB, Fonseca A, Pierard N, Willems I, Bister G, Pirlot C, Demortier A, Delhalle J, Mekhalif Z, Niesz K, Bossuot C, Pirard J-P, Biró, LP, Konya Z, Colomer J-F, Van Tendeloo G, Kiricsi I, (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Magnetic traps for excitons in GaAs/AlxGa1-xAs quantum wells”. Freire JAK, Peeters FM, Matulis A, Freire VN, Farias GA, , 503 (2001)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Photographic materials”. Verlinden G, Gijbels R, Geuens I Surface Spectra IM, Chichester, page 727 (2001).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Quantitative EFTEM study of germanium quantum dots”. Hens S, Stuer C, Bender H, Loo R, van Landuyt J, , 345 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Stress analysis with convergent beam electron diffraction around NMOS transistors”. Stuer G, Bender H, van Landuyt J, Eyben P, , 359 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab)
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“Theory of crystal structures of polymerized C60-fullerite and fullerides AC60, A=K, Rb, Cs”. Michel KH, Nikolaev AV, Verberck B s.l. (2001).
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
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“High resolution electron microscopy from imaging towards measuring”. Van Aert S, den Dekker AJ, van den Bos A, Van Dyck D ... IEEE International Instrumentation and Measurement Technology Conference
T2 – Rediscovering measurement in the age of informatics : proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference (IMTC), 2001: vol 3. Ieee, page 2081 (2001).
Keywords: H2 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
DOI: 10.1109/IMTC.2001.929564
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“Novel quantitative procedures for in-situ X-ray fluorescence analysis”. Injuk J, Janssens K, van Espen P, Van Grieken R, (2001)
Keywords: P3 Proceeding; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Chemometrics (Mitac 3)
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