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“Atomic scale characterization of supported and assembled nanoparticles”. Pauwels B, Yandouzi M, Schryvers D, Van Tendeloo G, Verschoren G, Lievens P, Hou M, van Swygenhoven H, , B8.3 (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Atomic scale modeling of supported and assembled nanoparticles”. Zhurkin E, Hou M, van Swygenhoven H, Pauwels B, Yandouzi M, Schryvers D, Van Tendeloo G, Lievens P, Verschoren G, Kuriplach J, van Peteghem S, Segers D, Dauwe C, , B8.2 (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Catalyst traces after chemical purification in CVD grown carbon nanotubes”. Biró, LP, Khanh NQ, Horváth ZE, Vértesy Z, Kocsonya A, Konya Z, Osváth Z, Koós A, Guylai J, Zhang XB, Van Tendeloo G, Fonseca A, Nagy JB, , 183 (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation”. Stuer C, Steegen A, van Landuyt J, Bender H, Maex K, Institute of physics conference series , 481 (2001)
Abstract: With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Correlation between a remote electron and a two-dimensional electron gas in resonant tunneling devices”. Kato H, Peeters FM, , 843 (2001)
Keywords: P3 Proceeding; Condensed Matter Theory (CMT)
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“Density functional theory approach to artificial molecules”. Partoens B, Peeters FM, , 128 (2001)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“EFTEM study of plasma etched low-k Si-O-C dielectrics”. Hens S, Bender H, Donaton RA, Maex K, Vanhaelemeersch S, van Landuyt J, Institute of physics conference series
T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND , 415 (2001)
Abstract: Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Enhanced spin and isospin blockade in two vertically coupled quantum dots”. Partoens B, Peeters FM, , 1035 (2001)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“High energy transitions and phonon-assisted harmonics of a shallow magneto-donor in GaAs/AlGaAs multiple quantum wells”. Bruno-Alfonso A, Hai G-Q, Peeters FM, Yeo T, Ryu SR, McCombe BD, , 1413 (2001)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“HREM investigation of a Fe/GaN/Fe tunnel junction”. Nistor L, Bender H, van Landuyt J, Nemeth S, Boeve H, De Boeck J, Borghs G, Institute of physics conference series
T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England , 53 (2001)
Abstract: The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Interactions between DC plasma and HF fields”. Cenian A, Chernukho A, Leys C, Bogaerts A, , 389 (2001)
Keywords: P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Large scale synthesis of carbon nanotubes and their composite materials”. Nagy JB, Fonseca A, Pierard N, Willems I, Bister G, Pirlot C, Demortier A, Delhalle J, Mekhalif Z, Niesz K, Bossuot C, Pirard J-P, Biró, LP, Konya Z, Colomer J-F, Van Tendeloo G, Kiricsi I, (2001)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Magnetic traps for excitons in GaAs/AlxGa1-xAs quantum wells”. Freire JAK, Peeters FM, Matulis A, Freire VN, Farias GA, , 503 (2001)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Photographic materials”. Verlinden G, Gijbels R, Geuens I Surface Spectra IM, Chichester, page 727 (2001).
Keywords: H3 Book chapter; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Quantitative EFTEM study of germanium quantum dots”. Hens S, Stuer C, Bender H, Loo R, van Landuyt J, , 345 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Stress analysis with convergent beam electron diffraction around NMOS transistors”. Stuer G, Bender H, van Landuyt J, Eyben P, , 359 (2001)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT); Internet Data Lab (IDLab)
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“Theory of crystal structures of polymerized C60-fullerite and fullerides AC60, A=K, Rb, Cs”. Michel KH, Nikolaev AV, Verberck B s.l. (2001).
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
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“High resolution electron microscopy from imaging towards measuring”. Van Aert S, den Dekker AJ, van den Bos A, Van Dyck D ... IEEE International Instrumentation and Measurement Technology Conference
T2 – Rediscovering measurement in the age of informatics : proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference (IMTC), 2001: vol 3. Ieee, page 2081 (2001).
Keywords: H2 Book chapter; Electron microscopy for materials research (EMAT); Vision lab
DOI: 10.1109/IMTC.2001.929564
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“Novel quantitative procedures for in-situ X-ray fluorescence analysis”. Injuk J, Janssens K, van Espen P, Van Grieken R, (2001)
Keywords: P3 Proceeding; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Chemometrics (Mitac 3)
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“Analytical methods to study atmospheric pollution and weathering of materials”. Van Grieken R, Cardell C, Delalieux F, Eyckmans K page 163 (2001).
Keywords: H3 Book chapter; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Application of light beams with non-zero angular momentum in optical study of micrometer-size aerosol particles”. Bekshaev A, Kontush S, Popov A, Van Grieken R, , 288 (2001). http://doi.org/10.1117/12.428282
Keywords: P1 Proceeding; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1117/12.428282
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“Geen vuiltje aan de Noordzeelucht: aërosolen kennen geen grenzen”. Van Grieken R, Eyckmans K, (2001)
Keywords: P3 Proceeding; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Luchtkwaliteit boven de Noordzeekust”. Eyckmans K, Van Grieken R page 9 (2001).
Keywords: H3 Book chapter; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“X-ray fluorescence”. Injuk J, Van Grieken RE page 151 (2001).
Keywords: H3 Book chapter; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Environmental conditions controlling the chemical weathering of the Madara Horseman monument, NE Bulgaria”. Delalieux F, Cardell C, Todorov V, Dekov V, Van Grieken R, Journal of cultural heritage 2, 43 (2001)
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Misfit accommodation of epitaxial La1-xAxMnO3 (A=Ca, Sr) thin films”. Lebedev OI, Van Tendeloo G, Amelinckx S, International journal of inorganic materials 3, 1331 (2001). http://doi.org/10.1016/S1466-6049(01)00155-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1016/S1466-6049(01)00155-6
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“X-ray fluorescence microtomography”. Chukalina M, Simionovici AS, Snigirev A, Drakopoulos M, Snigireva I, Adams F, Janssens K, Poverhnost 3, 40 (2001)
Keywords: A3 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy”. Hens S, van Landuyt J, Bender H, Boullart W, Vanhaelemeersch S, Materials science in semiconductor processing 4, 109 (2001). http://doi.org/10.1016/S1369-8001(00)00147-5
Abstract: The use of an energy-filtering held emission gun transmission electron microscope (CM30 FEG Ultratwin) allows, apart from imaging morphologies down to nanometer scale, the fast acquisition of high-resolution element distributions. Electrons that have lost energy corresponding to characteristic inner-shell loss edges are used to form the element maps. The production of Ultra Large-Scale Integration (ULSI) devices with dimensions below 0.25 mum requires among others the formation of a multilayer metallization scheme by means of repeatedly applying the deposition and etching of dielectrics and metals. In this work the evolution of the surface chemical species on etched Al lines in a post-etch cleaning process has been investigated by energy filtering transmission electron microscopy, with the aim to understand the role of each process step on the removal of the etching residues. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
DOI: 10.1016/S1369-8001(00)00147-5
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“The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures”. Stuer C, van Landuyt J, Bender H, Rooyackers R, Badenes G, Materials science in semiconductor processing 4, 117 (2001). http://doi.org/10.1016/S1369-8001(00)00110-4
Abstract: Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 2.359
Times cited: 6
DOI: 10.1016/S1369-8001(00)00110-4
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“Phase transformations and precipitation in amorphous Ti50Ni25Cu25 ribbons”. Satto C, Ledda A, Potapov P, Janssens JF, Schryvers D, Intermetallics 9, 395 (2001). http://doi.org/10.1016/S0966-9795(01)00015-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.14
Times cited: 16
DOI: 10.1016/S0966-9795(01)00015-2
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