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“Engineering Structural Diversity in Gold Nanocrystals by Ligand-Mediated Interface Control”. Wang Y, Sentosun K, Li A, Coronado-Puchau M, Sánchez-Iglesias A, Li S, Su X, Bals S, Liz-Marzán LM, Chemistry of materials 27, 8032 (2015). http://doi.org/10.1021/acs.chemmater.5b03600
Abstract: Surface and interface control is fundamentally important for crystal growth engineering, catalysis, surface enhanced spectroscopies, and self-assembly, among other processes and applications. Understanding the role of ligands in regulating surface properties of plasmonic metal nanocrystals during growth has received considerable attention. However, the underlying mechanisms and the diverse functionalities of ligands are yet to be fully addressed. In this contribution,
we report a systematic study of ligand-mediated interface control in seeded growth of gold nanocrystals, leading to diverse and exotic nanostructures with an improved surface enhanced Raman scattering (SERS) activity. Three dimensional transmission electron microscopy (3D TEM) revealed an intriguing gold shell growth process mediated by the bifunctional ligand 1,4-benzenedithiol (BDT), which leads to a unique crystal growth mechanism as compared to other ligands, and subsequently to the concept of interfacial energy control mechanism. Volmer-Weber growth mode was proposed to be responsible for BDT-mediated seeded growth, favoring the strongest interfacial energy and generating an asymmetric island growth pathway with internal crevices/gaps. This additionally favors incorporation of BDT at the plasmonic nanogaps, thereby generating strong SERS activity with a maximum efficiency for a core-semishell configuration obtained along seeded growth. Numerical modeling was used to explain this observation. Interestingly, the same strategy can be used to engineer the structural diversity of this system, by using gold nanoparticle seeds with various sizes and shapes, and varying the [Au3+]/[Au0] ratio. This rendered a series of diverse and exotic plasmonic nanohybrids such as semishell-coated gold nanorods, with embedded Raman-active tags and Janus surface with distinct surface functionalities.
These would greatly enrich the plasmonic nanostructure toolbox for various studies and applications such as anisotropic nanocrystal engineering, SERS, and high-resolution Raman bioimaging or nanoantenna devices.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 18
DOI: 10.1021/acs.chemmater.5b03600
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“The scaling relationships of leaf biomass vs. leaf surface area of 12 bamboo species”. Huang W, Su X, Ratkowsky DA, Niklas KJ, Gielis J, Shi P, Global ecology and conservation 20, e00793 (2019). http://doi.org/10.1016/J.GECCO.2019.E00793
Abstract: There is convincing evidence for a scaling relationship between leaf dry weight (DW) and leaf surface area (A) for broad-leaved plants, and most estimates of the scaling exponent of DW vs. A are greater than unity. However, the scaling relationship of leaf fresh weight (FW) vs. A has been largely neglected. In the present study, we examined whether there is a statistically strong scaling relationship between FW and A and compared the goodness of fit to that of DW vs. A. Between 250 and 520 leaves from each of 12 bamboo species within 2 genera (Phyllostachys and Pleioblastus) were investigated. The reduced major axis regression protocols were used to determine scaling relationships. The fit for the linearized scaling relationship of FW vs. A was compared with that of DW vs. A using the coefficient of determination (i.e., r2). A stronger scaling relationship between FW and A than that between DW and A was observed for each of the 12 bamboo species investigated. Among the 12 species examined, five had significantly smaller scaling exponents of FW vs. A compared to those of DW vs. A; only one species had a scaling exponent of FW vs. A greater than that of DW vs. A. No significant difference between the two scaling exponents was observed for the remaining 6 species. Researchers conducting future studies might be well advised to consider the influence of leaf fresh weight when exploring the scaling relationships of foliar biomass allocation patterns.
Keywords: A1 Journal article; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
DOI: 10.1016/J.GECCO.2019.E00793
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“Ferroelectric engineering : enhanced thermoelectric performance by local structural heterogeneity”. Meng X, Chen S, Peng H, Bai H, Zhang S, Su X, Tan G, Van Tendeloo G, Sun Z, Zhang Q, Tang X, Wu J, Science China : materials (2022). http://doi.org/10.1007/S40843-021-1927-9
Abstract: Although traditional ferroelectric materials are usually dielectric and nonconductive, GeTe is a typical ferroelectric semiconductor, possessing both ferroelectric and semiconducting properties. GeTe is also a widely studied thermoelectric material, whose performance has been optimized by doping with various elements. However, the impact of the ferroelectric domains on the thermoelectric properties remains unclear due to the difficulty to directly observe the ferroelectric domains and their evolutions under actual working conditions where the material is exposed to high temperatures and electric currents. Herein, based on in-situ investigations of the ferroelectric domains and domain walls in both pure and Sb-doped GeTe crystals, we have been able to analyze the dynamic evolution of the ferroelectric domains and domain walls, exposed to an electric field and temperature. Local structural heterogeneities and nano-sized ferroelectric domains are generated due to the interplay of the Sb3+ dopant and the Ge-vacancies, leading to the increased number of charged domain walls and a much improved thermoelectric performance. This work reveals the fundamental mechanism of ferroelectric thermoelectrics and provides insights into the decoupling of previously interdependent properties such as thermo-power and electrical conductivity.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 8.1
DOI: 10.1007/S40843-021-1927-9
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“Resistive switching in Ag₂Te semiconductor modulated by Ag+-ion diffusion and phase transition”. Guo A, Bai H, Liang Q, Feng L, Su X, Van Tendeloo G, Wu J, Advanced Electronic Materials , 2200850 (2022). http://doi.org/10.1002/AELM.202200850
Abstract: Memristors are considered to be the fourth circuit element and have great potential in areas like logic operations, information storage, and neuromorphic computing. The functional material in a memristor, which has a nonlinear resistance, is the key component to be developed. Herein, resistive switching is demonstrated and the structural evolutions in Ag2Te are examined under an external electric field. It is shown that the electroresistance effect is originating from an electronically triggered phase transition together with directional Ag+-ion diffusion. Using in situ transmission electron microscopy, the phase transition from the monoclinic alpha-Ag2Te into the face-centered cubic beta-Ag2Te, accompanied by a change in resistance, is directly observed. Diffusion of Ag+-ions modulates the localized density of Ag+-ion vacancies, leading to a change in electrical conductivity and influences the threshold voltage to trigger the phase transition. During the electric field-driven phase transition, the spontaneous and localized multiple polarizations from the low-symmetry alpha-Ag2Te (referring to an antiferroelectric structure) are vanishing in the cubic beta-Ag2Te (referring to a paraelectric structure). The abrupt resistance change of thin Ag2Te caused by the phase transition and modulated by the applied electric field demonstrates its great potential as functional material in volatile memory and memristors with a low-energy consumption.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 6.2
DOI: 10.1002/AELM.202200850
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