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“The study of partially ordered 11/20 alloys by HREM”. De Meulenaere P, Van Tendeloo G, van Landuyt J, Microscopy research and technique 25, 169 (1993). http://doi.org/10.1002/jemt.1070250208
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.154
DOI: 10.1002/jemt.1070250208
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“Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport”. Volkov VV, van Heurck C, van Landuyt J, Amelinckx S, Zhukov EG, Polulyak ES, Novotortsev VM, Crystal research and technology 28, 1051 (1993). http://doi.org/10.1002/crat.2170280804
Abstract: The growth features of FeCr2S4 spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr7S12 and FeCr8S12, both based on the NiAs structure, can essentially inhibit the growth of large FeCr2S4 spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.935
Times cited: 1
DOI: 10.1002/crat.2170280804
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“Structural aspects of CVD idamond wafers grown at different hydrogen flow rates”. Nistor L, van Landuyt J, Ralchenko V, Physica status solidi: A: applied research 171, 5 (1999). http://doi.org/10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 15
DOI: 10.1002/(SICI)1521-396X(199907)174:1<5::AID-PSSA5>3.3.CO;2-3
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“Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Physica status solidi: A: applied research
T2 –, International Conference on Extended Defects in Semiconductors (EDS 98), Sept. 06-11, 1998, Jaszowiec, Poland 171, 147 (1999). http://doi.org/10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
Abstract: In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and self-interstitial atoms on {111}- and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}- and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {133}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 40
DOI: 10.1002/(SICI)1521-396X(199901)171:1<147::AID-PSSA147>3.0.CO;2-U
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“TEM study on precipitation behavior in Cu-Co alloys”. Takeda M, Suzuki N, Shinohara G, Endo T, van Landuyt J, Physica status solidi: A: applied research 168, 27 (1998). http://doi.org/10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 18
DOI: 10.1002/(SICI)1521-396X(199807)168:1<27::AID-PSSA27>3.0.CO;2-S
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“Transmission electron microscopy studies of (111) twinned silver halide microcrystals”. Goessens C, Schryvers D, van Landuyt J, Microscopy research and technique 42, 85 (1998). http://doi.org/10.1002/(SICI)1097-0029(19980715)42:2<85::AID-JEMT3>3.0.CO;2-M
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.147
Times cited: 8
DOI: 10.1002/(SICI)1097-0029(19980715)42:2<85::AID-JEMT3>3.0.CO;2-M
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“A 2a2b3c superstructure in hexagonal NiS1-x: a study by means of electron diffraction and HREM”. Lioutas CB, Manolikas C, Van Tendeloo G, van Landuyt J, Journal of crystal growth 126, 457 (1993)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 4
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“Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation”. Stuer C, Steegen A, van Landuyt J, Bender H, Maex K, Institute of physics conference series , 481 (2001)
Abstract: With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these technologies. In this study, convergent beam electron diffraction (CBED) measurements and finite element modelling (FEM) are performed to evaluate the local stress components in the silicon substrate, induced in STI structures with a 45 nm or a 85 nm CoSi2 silicidation. High compressive stresses in the active area and tensile stress around the trench corners are observed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Characteristic mosaic texture related to orderingin AuCu-9at.%Ag pseudobinary alloy”. Yasuda K, Hisatsune K, Udoh K, Tanaka Y, Van Tendeloo G, van Landuyt J, Dentistry in Japan 29, 91 (1992)
Keywords: A3 Journal article; Electron microscopy for materials research (EMAT)
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“Characterization of crystal defects and analysis of iodide distribution in mixed tabular silver halide grains by conventional transmission electron microscopy, X-ray diffractometry and back-scattered electron imaging”. Goessens C, Schryvers D, van Landuyt J, Amelinckx S, Geuens I, Gijbels R, Jacob W, Verbeeck A, de Keyzer R, (1991)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Characterization of crystal defects in mixed tabular silver halide grains by conventional transmission electron microscopy and X-ray diffractometry”. Goessens C, Schryvers D, van Landuyt J, Amelinckx S, Verbeeck A, de Keyzer R, Journal of crystal growth 110, 930 (1991)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.698
Times cited: 40
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“Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas”. Volkov VV, van Landuyt J, Marushkin KM, Gijbels R, Férauge C, Vasilyev MG, Shelyakin AA, Sokolovsky AA, Journal of crystal growth 173, 285 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.751
Times cited: 4
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“Charcaterization by high-resolution transmission electron microscopy”. van Landuyt J, Van Tendeloo G Stt, Den Haag, page 187 (1998).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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“Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy”. De Gryse O, Clauws P, Vanhellemont J, Lebedev O, van Landuyt J, Simoen E, Claeys C, , 183 (2002)
Abstract: Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet precipitates has been determined by transmission electron microscopy measurements. Our analysis shows that in samples with moderate doping levels (<10(18) B cm(-3)) SiOgamma precipitates are formed with stoichiometry as in the lightly doped case. In the heavily (>10(18) cm(-3)) boron doped samples, however, the measured spectra of the precipitates are consistent with a mixture of SiO2 and B2O3. with a volume fraction of B2O3 as high as 0.41 in the most heavily doped case.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Clustering of vacancies on {113} planes in Si layers close to Si-Si3N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation”. Fedina L, Gutakovskii A, Aseev A, van Landuyt J, Vanhellemont J, Institute of physics conference series
T2 –, Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND , 495 (1999)
Abstract: In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals”. Buschmann V, Schryvers D, van Landuyt J, van Roost C, de Keyzer R, The journal of imaging science and technology 40, 189 (1996)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.349
Times cited: 4
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“Comparative study of structural properties and photoluminescence in InGaN layers with a high In content”. Vantomme A, Wu MF, Hogg S, van Landuyt J, et al, Internet journal of nitride semiconductor research
T2 –, Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS 5, art. no.-W11.38 (2000)
Abstract: Rutherford backscattering and channeling spectrometry (RBS), photoluminescence (PL) spectroscopy and transmission electron microscopy (TEM) have been used to investigate macroscopic and microscopic segregation in MOCVD grown InGaN layers. The PL peak energy and In content (measured by RES) were mapped at a large number of distinct points on the samples. An indium concentration of 40%, the highest measured in this work, corresponds to a PL peak of 710 nn strongly suggesting that the light-emitting regions of the sample me very indium-rich compared to the average measured by RES. Cross-sectional TEM observations show distinctive layering of the InGaN films. The TEM study further reveals that these layers consist of amorphous pyramidal contrast features with sizes of order 10 nm The composition of these specific contrast features is shown to be In-rich compared to the nitride matrix.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Computational comparisons between the conventional multislice method and the third-order multislice method for calculating high-energy electron diffraction and imaging”. Chen JH, van Dyck D, op de Beeck M, van Landuyt J, Ultramicroscopy 69, 219 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.843
Times cited: 11
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“Conventional and HREM study of structural defects in nanostructured silver halides”. Schryvers D, Goessens C, van Renterghem W, van Landuyt J, de Keyzer R, , 1 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Crystallography of fullerites and related graphene textures”. van Landuyt J, Van Tendeloo G, Amelinckx S, Zhang XF, Zhang XB, Luyten W, Materials science forum 150/151, 53 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Defect induced thickness growth in silver chloride (111) tabular crystals: a TEM study”. Van Renterghem W, Schryvers D, van Landuyt J, Bollen D, Van Roost C, De Keyzer RB, , 38 (2000)
Abstract: Defects in AgG tabular crystals with {111} surfaces are characterised by transmission electron microscopy (TEM) and their influence on the growth process is discussed. In the tabular crystals, twins parallel to the tabular face as well as dislocations along different directions are observed. The twins induce the tabular growth, while the dislocations do not influence the morphology. In 10 to 30% of the crystals that have been characterised, thickness growth is observed and it is shown that in all cases twins on other planes than the tabular ones are present. Two configurations occur more frequently and are analysed in detail. For the first group, twins parallel to the tabular face as well as a microtwin along a non-parallel {111} plane and ending inside the crystal are present. In the crystals of the second group only one extra non-parallel twin occurs giving rise to a bicrystal built up by a tetrahedral shaped part and a flat triangular or trapezoidal part. More complex twin configurations give rise to various, less characteristic morphologies.
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
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“Defect related growth of tabular AgCl(100) crystals: a TEM study”. van Renterghem W, Schryvers D, van Landuyt J, van Roost C, , 389 (1998)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Defects in AgCl and AgBr(100) tabular crystals studied by TEM”. van Renterghem W, Goessens C, Schryvers D, van Landuyt J, Verrept P, Bollen D, van Roost C, de Keyzer R, , 6 (1998)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Direct observation of clusters in some FCC alloys by HREM”. De Meulenaere P, Van Tendeloo G, van Landuyt J, Icem 13, 447 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“EFTEM study of plasma etched low-k Si-O-C dielectrics”. Hens S, Bender H, Donaton RA, Maex K, Vanhaelemeersch S, van Landuyt J, Institute of physics conference series
T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND , 415 (2001)
Abstract: Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Electron diffraction evidence for ordering of interstitial silver ions in silver bromide microcrystals”. Goessens C, Schryvers D, van Dyck D, van Landuyt J, de Keyzer R, Icem 13 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
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“Electron microscopical investigation of tetrahedral-shaped AgBr microcrystals”. Goessens C, Schryvers D, van Landuyt J, de Keyzer R, Journal of crystal growth 172, 426 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.751
Times cited: 15
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“Electron microscopy and diffraction study of the composition dependency of the 3R microtwinned martensite in Ni-Al”. Schryvers D, de Saegher B, van Landuyt J, Materials research bulletin 26, 57 (1991)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.288
Times cited: 11
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“Electron microscopy of fullerenes and fullerene related structures”. Van Tendeloo G, van Landuyt J, Amelinckx S, , 498 (1994)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Electron microscopy of interfaces in new materials”. Van Tendeloo G, Goessens C, Schryvers D, van Haverbergh J, de Veirman A, van Landuyt J s.l., page 200 (1991).
Keywords: H3 Book chapter; Electron microscopy for materials research (EMAT)
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