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“Structural and physical properties of the new superconductor Hg0.5Pb0.5Sr4-xBaxCu2(CO3)O7-\delta”. Huvé, M, Van Tendeloo G, Hervieu M, Maignan A, Raveau B, Physica: C : superconductivity 231, 15 (1994). http://doi.org/10.1016/0921-4534(94)90138-4
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 14
DOI: 10.1016/0921-4534(94)90138-4
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“Lead-mercury-based superconductors –, the 1212-cuprate Pb0.7Hg0.3Sr2+xCa0.7Nd0.3-xCu2O7-\delta and the new oxycarbonate Pb0.7Hg0.3Sr4Cu2CO3O7”. Martin C, Hervieu M, Huvé, M, Michel C, Maignan A, Van Tendeloo G, Raveau B, Physica: C : superconductivity 222, 19 (1994). http://doi.org/10.1016/0921-4534(94)90109-0
Abstract: A new superconducting mercury oxycarbonate, Pb0.7Hg0.3Sr4Cu2CO3O7, has been synthesized. This tetragonal phase (a = 3.824 angstrom, c= 16.468 angstrom) consists of an intergrowth of two nonsuperconducting compounds, Sr2CuO2CO3 and Pb0.7Hg0.3Sr2CuO5. It exhibits after optimization a critical temperature of 70 K, with a sharp transition and a superconducting volume fraction of 50%. Its behavior can be compared to that of thallium oxycarbonates previously isolated. This study is completed by a reinvestigation of the 1212 cuprate of the system Hg-Pb-Sr-Ca-Nd-Cu. A superconducting phase with the 1212 structure, similar to that previously obtained but with a significantly different composition, Pb0.7Hg0.3Sr2+xCa0.7Nd0.3-xCu2O7, has been obtained, with a T(c onset) of 100 K. The behavior of the latter is compared with other lead-based 1212 cuprates.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 49
DOI: 10.1016/0921-4534(94)90109-0
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“SO4-chain formation and ordering in [YSrCa]Sr2Cu2.78(SO4)0.22O7-\delta”. Krekels T, Milat O, Van Tendeloo G, van Landuyt J, Amelinckx S, Slater PR, Greaves C, Physica: C : superconductivity 210, 439 (1993). http://doi.org/10.1016/0921-4534(93)90988-3
Abstract: YBCO-based materials containing SO4-tetrahedra centered on the Cu(1)-sites of the CuO-chain plane have been examined by means of electron diffraction and high resolution electron microscopy. An incommensurate modulation is observed and attributed to the ordering of b-oriented SO4-rich chains in the Cu(1)-S-O-layer, described in terms of an SO4-concentration wave.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 18
DOI: 10.1016/0921-4534(93)90988-3
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“Effects of the annealing conditions on the structural and superconducting properties of Bi2-xPbxSr2Y0.2Ca0.8Cu2Oz”. Calestani G, Salsi G, Francesconi MG, Masini M, Dimesso L, Migliori A, Zhang XF, Van Tendeloo G, Physica: C : superconductivity 206, 33 (1993). http://doi.org/10.1016/0921-4534(93)90698-P
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 10
DOI: 10.1016/0921-4534(93)90698-P
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“Two phase intergrowth in Bi2Sr2Ca0.6Y0.4Cu2Oy single crystals”. Zhang XF, Van Tendeloo G, Ge SL, Emmen JHPM, Brabers VAM, Physica: C : superconductivity 215, 39 (1993). http://doi.org/10.1016/0921-4534(93)90362-T
Abstract: In Bi2Sr2Ca0.6Y0.4Cu2Oy single crystals we have identified the intergrowth of two phases; a normal Bi2Sr2CaCu2Oy type phase with a 4.6b modulation period and a secondary,phase with a 9.4b modulation period. Both the two phases have orthorhombic basic structures with similar lattice parameters but different symmetries, i.e. Bbmb for the normal phase and Ccca for the secondary phase. The c-parameters of these two phases are found to vary independently upon changing the nominal Y content. The modulation characteristics of the secondary phase implies a close structural relation between the two phases. Both phases are discussed from a structural and a compositional point of view.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 17
DOI: 10.1016/0921-4534(93)90362-T
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“Ortho-II structure in ABa2Cu3O7-\delta compounds (A=Er, Nd, Pr, Sm, Yb)”. Krekels T, Zou H, Van Tendeloo G, Wagener D, Buchgeister M, Hosseini SM, Herzog P, Physica: C : superconductivity 196, 363 (1992). http://doi.org/10.1016/0921-4534(92)90458-O
Abstract: Oxygen ordering has been investigated in superconducting ABa2Cu3O7-delta ceramic materials with A = Er, Nd, Sm and Yb, as well as in samples of this type with the rate earth A partially substituted by Pr. The critical temperature T(c) was determined as a function of the oxygen deficiency-delta of the compound and the corresponding microstructures were investigated by electron diffraction and electron microscopy. A distinct relationship exists between the width of the 60 K plateau and the ortho II ordering. Our results show that the ortho II ordered phase is the superconducting phase with a characteristic T(c) of 60 K.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 52
DOI: 10.1016/0921-4534(92)90458-O
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“On the interpretation of HREM images of partially ordered alloys”. De Meulenaere P, Van Tendeloo G, van Landuyt J, van Dyck D, Ultramicroscopy 60, 265 (1995). http://doi.org/10.1016/0304-3991(95)00065-9
Abstract: The ordering for 11/20 alloys has been studied by high-resolution electron microscopy (HREM). The distribution of the intensity maxima in the HREM image have been statistically examined, which provides a profound basis for the image interpretation. Processing of the HREM images allows ''dark-field'' images to be obtained, exhibiting a two-dimensional distribution of those columns which contain the most information in order to interpret the short-range order correlations. Pair correlations and higher cluster correlations between projected columns can be visualised, providing unique information about the ordering as retrieved from an experimental result without any other assumption. The method has been applied to Au4Cr and to Au4Mn to interpret the quenched short-range order state and the transition to long-range order.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 20
DOI: 10.1016/0304-3991(95)00065-9
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“Dynamical electron diffraction in substitutionally disordered column structures”. De Meulenaere P, van Dyck D, Van Tendeloo G, van Landuyt J, Ultramicroscopy 60, 171 (1995). http://doi.org/10.1016/0304-3991(95)00040-8
Abstract: For column structures, such as fee-based alloys viewed along the cube direction, the concept of electron channelling through the atom columns is more and more used to interpret the corresponding HREM images. In the case of(partially) disordered columns, the projected potential approach which is used in the channelling description must be questioned since the arrangement of the atoms along the beam direction might affect the exit wave of the electrons. In this paper, we critically inspect this top-bottom effect using multi-slice calculations. A modified channelling theory is introduced which turns out to be very appropriate for the interpretation of these results. For substitutionally disordered column structures, it is also discussed how to link the chemical composition of the material to statistical data of the HREM image. This results in a convenient tool to discern images taken at different thicknesses and focus values.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 14
DOI: 10.1016/0304-3991(95)00040-8
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“The reciprocal space of carbon tubes: a detailed interpretation of the electron diffraction effects”. Zhang XB, Zhang XF, Amelinckx S, Van Tendeloo G, van Landuyt J, Ultramicroscopy 54, 237 (1994). http://doi.org/10.1016/0304-3991(94)90123-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 59
DOI: 10.1016/0304-3991(94)90123-6
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“A simple preparation method for air-sensitive specimens for transmission electron microscopy demonstrated by Rb6C60”. Zhang XF, Zhang XB, Bernaerts D, Van Tendeloo G, Amelinckx S, van Landuyt J, Werner H, Ultramicroscopy 55, 25 (1994). http://doi.org/10.1016/0304-3991(94)90077-9
Abstract: In this paper a particularly simple but efficient method is presented by which samples of alkali-doped C-60 materials or other air-sensitive materials can be prepared and transferred into a transmission electron microscope for direct observations and investigations. Flexible, transparent glove bags are used which are filled to a slight overpressure with dry nitrogen. Under this protective atmosphere, the air-sensitive sample is mounted in the specimen holder and inserted in the vacuum of the electron microscope. Rb6C60 which is prepared and transferred into the microscope in this way has been investigated by transmission electron microscopy (TEM). The results confirm the bcc structure and especially the location of the rubidium atoms.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 2
DOI: 10.1016/0304-3991(94)90077-9
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“Electron diffraction effects of conical, helically wound, graphite whiskers”. Luyten W, Krekels T, Amelinckx S, Van Tendeloo G, van Dyck D, van Landuyt J, Ultramicroscopy 49, 123 (1993). http://doi.org/10.1016/0304-3991(93)90219-N
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 14
DOI: 10.1016/0304-3991(93)90219-N
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“Structures and phase transitions in C60 and C70 fullerites”. Van Tendeloo G, Amelinckx S, Muto S, Verheijen MA, van Loosdrecht PHM, Meijer G, Ultramicroscopy 51, 168 (1993). http://doi.org/10.1016/0304-3991(93)90145-N
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 17
DOI: 10.1016/0304-3991(93)90145-N
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“Selective imaging of sublattices in complex structures”. Amelinckx S, Milat O, Van Tendeloo G, Ultramicroscopy 51, 90 (1993). http://doi.org/10.1016/0304-3991(93)90138-N
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 8
DOI: 10.1016/0304-3991(93)90138-N
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“Selective imaging of the “substructures&rdquo, in incommensurately modulated intergrowth crystal structures”. Milat O, Van Tendeloo G, Amelinckx S, Ultramicroscopy 41, 65 (1992). http://doi.org/10.1016/0304-3991(92)90095-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 5
DOI: 10.1016/0304-3991(92)90095-2
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“Inelastic scattering of high-energy electrons in a crystal in thermal equilibrium with the environment: 1: theoretical framework”. Fanidis C, van Dyck D, van Landuyt J, Ultramicroscopy 41, 55 (1992). http://doi.org/10.1016/0304-3991(92)90094-Z
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.436
Times cited: 17
DOI: 10.1016/0304-3991(92)90094-Z
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“In situ HREM study of electron irradiation effects in AgCl microcrystals”. Goessens C, Schryvers D, van Landuyt J, de Keyzer R, Ultramicroscopy 40, 151 (1992). http://doi.org/10.1016/0304-3991(92)90056-P
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
Times cited: 10
DOI: 10.1016/0304-3991(92)90056-P
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“The evolution of HVEM application in antwerp”. van Landuyt J, Ultramicroscopy
T2 –, 2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan 39, 287 (1991). http://doi.org/10.1016/0304-3991(91)90208-N
Abstract: The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.436
DOI: 10.1016/0304-3991(91)90208-N
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“The structure of different phases of pure C70 crystals”. Verheijen MA, Meekes H, Meijer G, Bennema P, de Boer JL, van Smaalen S, Van Tendeloo G, Amelinckx S, Muto S, van Landuyt J, Chemical physics 166, 287 (1992). http://doi.org/10.1016/0301-0104(92)87026-6
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.652
Times cited: 168
DOI: 10.1016/0301-0104(92)87026-6
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“Photoelectric and electrical responses of several erbium silicide/silicon interfaces”. Muret P, Nguyen TTA, Frangis N, Van Tendeloo G, van Landuyt J, Applied surface science
T2 –, International Symposium on Si Heterostructures –, From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE 102, 173 (1996). http://doi.org/10.1016/0169-4332(96)00042-6
Abstract: In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 3
DOI: 10.1016/0169-4332(96)00042-6
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“Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate”. Frangis N, Van Tendeloo G, van Landuyt J, Muret P, Nguyen TTA, Applied surface science 102, 163 (1996). http://doi.org/10.1016/0169-4332(96)00040-2
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 9
DOI: 10.1016/0169-4332(96)00040-2
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“High crystalline quality erbium silicide films on (100) silicon grown in high vacuum”. Kaltsas G, Travlos A, Nassiopoulos AG, Frangis N, van Landuyt J, Applied surface science 102, 151 (1996). http://doi.org/10.1016/0169-4332(96)00036-0
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 14
DOI: 10.1016/0169-4332(96)00036-0
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“Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry”. Vanhellemont J, Maes HE, Schaekers M, Armigliato A, Cerva H, Cullis A, de Sande J, Dinges H, Hallais J, Nayar V, Pickering C, Stehlé, JL, Van Landuyt J, Walker C, Werner H, Salieri P;, Applied surface science
T2 –, SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE 63, 45 (1993). http://doi.org/10.1016/0169-4332(93)90062-G
Abstract: The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.711
Times cited: 13
DOI: 10.1016/0169-4332(93)90062-G
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“Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope”. Fedina L, van Landuyt J, Vanhellemont J, Aseev AL, Nuclear instruments and methods in physics research B112, 133 (1996). http://doi.org/10.1016/0168-583X(95)01277-X
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 4
DOI: 10.1016/0168-583X(95)01277-X
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“Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization”. Frangis N, Nejim A, Hemment PLF, Stoemenos J, van Landuyt J, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 –, Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing –, Fr 112, 325 (1996). http://doi.org/10.1016/0168-583X(95)01236-2
Abstract: The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 1.124
Times cited: 9
DOI: 10.1016/0168-583X(95)01236-2
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“In-situ TEM study of the Ni5Al3 to B2 + L12 decomposition in Ni65Al35”. Schryvers D, Ma Y, Materials letters 23, 105 (1995). http://doi.org/10.1016/0167-577X(95)00030-5
Abstract: Homogenised and quenched Ni65Al35 samples were heated and studied in situ in a CM20 electron microscope up to 900 degrees C. The Ni5Al3 phase first forming around 550 degrees C in the quenched L1(0) microtwinned martensite starts to decompose around 800 degrees C yielding B2 precipitates in a twinned L1(2) matrix. The latter twinning is a remainder of the microtwinning in the original room temperature martensite. Also the crystallographic relations between precipitates and matrix can be traced back to the original formation of twinned martensite plates within the austenite. Some aspects of the dynamics of the process are discussed on the basis of snap shots and video recordings.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.489
Times cited: 5
DOI: 10.1016/0167-577X(95)00030-5
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“Defects in high-dose oxygen implanted silicon : a TEM study”. Deveirman A, van Landuyt J, Vanhellemont J, Maes HE, Yallup K, Vacuum: the international journal and abstracting service for vacuum science and technology
T2 –, 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND 42, 367 (1991). http://doi.org/10.1016/0042-207X(91)90055-N
Abstract: Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.858
Times cited: 4
DOI: 10.1016/0042-207X(91)90055-N
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“EM, XPS and LEED study of deposition of Ag on hydrogenated Si substrate prepared by wet chemical treatments”. Zhang XB, Vasiliev AL, Van Tendeloo G, He Y, Yu L-M, Thiry PA, Surface science : a journal devoted to the physics and chemistry of interfaces 340, 317 (1995). http://doi.org/10.1016/0039-6028(95)00699-0
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.925
Times cited: 11
DOI: 10.1016/0039-6028(95)00699-0
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“Long period surface ordering of iodine ions in mixed tabular AgBr-AgBrI microcrystals”. Goessens C, Schryvers D, van Landuyt J, Amelinckx S, de Keyzer R, Surface science : a journal devoted to the physics and chemistry of interfaces 337, 153 (1995). http://doi.org/10.1016/0039-6028(95)00000-3
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.925
Times cited: 10
DOI: 10.1016/0039-6028(95)00000-3
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“Molecular orientation and conductivity in highly oriented poly(p-phenylene vinylene)”. Briers J, Eevers W, Cos P, Geise HJ, Mertens R, Nagels P, Zhang XB, Van Tendeloo G, Herrebout W, van der Veken B, Polymer 35, 4569 (1994). http://doi.org/10.1016/0032-3861(94)90804-4
Keywords: A1 Journal article; Molecular Spectroscopy (MolSpec); Electron microscopy for materials research (EMAT)
Impact Factor: 3.562
Times cited: 16
DOI: 10.1016/0032-3861(94)90804-4
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“TEM study of laser induced phase transition in iron thin films”. Teodorescu VS, Nistor LC, van Landuyt J, Dinescu M, Materials research bulletin 29, 63 (1994). http://doi.org/10.1016/0025-5408(94)90106-6
Abstract: Laser induced phase transition from b.c.c.(alpha) to f.c.c.(gamma) iron thin films is studied by high resolution TEM. The iron film has been covered on both sides with carbon layers to protect it against oxidation. Single pulse, tau FWHM = 20ns KrF (lambda = 248nm) excimer laser irradiation was performed in air with the film on the substrate. The laser pulse acts like a heat pulse followed by a rapid quenching revealing sequential aspects of the phase transition process. The presence of a fine mixture of the alpha + gamma phases between the alpha and gamma regions of the film has been interpreted as an incomplet transformation. The results are explained by assuming that the transformation took place via a phonon drag mechanism.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.288
Times cited: 2
DOI: 10.1016/0025-5408(94)90106-6
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