|
“Evolution of charged particle densities after laser-induced photodetachment in a strongly electronegative RF discharge”. Yan M, Bogaerts A, Gijbels R, IEEE transactions on plasma science 30, 132 (2002). http://doi.org/10.1109/TPS.2002.1003959
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.052
DOI: 10.1109/TPS.2002.1003959
|
|
|
“Elemental analysis of aerosols using proton-scattering”. Nelson JW, Williams I, Johansson TB, Van Grieken RE, IEEE transactions on nuclear science Ns21, 618 (1974). http://doi.org/10.1109/TNS.1974.4327522
Abstract: Elemental analysis for all of the light elements up through chlorine by elastic scattering of 16 MeV protons has been shown to be feasible. Basic problems associated with such measurements are discussed including kinematics, angular distribution, and sample backings. Spectra are presented for air particulate matter for both a total filter (Nuclepore) and a size fractionated air impactor (polystyrene backed) sample. The method is absolute, non destructive and can be used in conjunction with proton induced x-ray fluorescence to quantitatively analyze all elements in the same sample in minutes of time.
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1109/TNS.1974.4327522
|
|
|
“High-resolution electron microscopy : from imaging toward measuring”. Van Aert S, den Dekker AJ, van den Bos A, van Dyck D, IEEE transactions on instrumentation and measurement 51, 611 (2002). http://doi.org/10.1109/TIM.2002.802250
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.456
Times cited: 13
DOI: 10.1109/TIM.2002.802250
|
|
|
“Signature of ballistic band-tail tunneling current in tunnel FET”. Bizindavyi J, Verhulst AS, Sorée B, Groeseneken G, Ieee Transactions On Electron Devices 67, 3486 (2020). http://doi.org/10.1109/TED.2020.3004119
Abstract: To improve the interpretation of the tunnel field-effect transistor (TFET) measurements, we theoretically identify the signatures of the ballistic band-tail (BT) tunneling (BTT) current in the transfer and output characteristics of the TFETs. In particular, we demonstrate that the temperature dependence of a BTT-dominated subthreshold swing (SS) is in agreement with the reported experimental results. We explain how the temperature dependence of the output characteristics can be used to distinguish between a current dominated by BTT and a current dominated by trap-assisted tunneling. Finally, we propose an expression that relates the energetic extension of the quasi-extended BT states in the bandgap to the onset voltage for tunneling.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.1
DOI: 10.1109/TED.2020.3004119
|
|
|
“Optimization of gate-on-source-only tunnel FETs with counter-doped pockets”. Kao K-H, Verhulst AS, Vandenberghe WG, Sorée B, Magnus W, Leonelli D, Groeseneken G, De Meyer K, IEEE transactions on electron devices 59, 2070 (2012). http://doi.org/10.1109/TED.2012.2200489
Abstract: We investigate a promising tunnel FET configuration having a gate on the source only, which is simultaneously exhibiting a steeper subthreshold slope and a higher ON-current than the lateral tunneling configuration with a gate on the channel. Our analysis is performed based on a recently developed 2-D quantum-mechanical simulator calculating band-to-band tunneling and including quantum confinement (QC). It is shown that the two disadvantages of the structure, namely, the sensitivity to gate alignment and the physical oxide thickness, are mitigated by placing a counter-doped parallel pocket underneath the gate-source overlap. The pocket also significantly reduces the field-induced QC. The findings are illustrated with all-Si and all-Ge gate-on-source-only tunnel field-effect transistor simulations.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.605
Times cited: 72
DOI: 10.1109/TED.2012.2200489
|
|
|
“Direct and indirect band-to-band tunneling in germanium-based TFETs”. Kao K-H, Verhulst AS, Vandenberghe WG, Sorée B, Groeseneken G, De Meyer K, IEEE transactions on electron devices 59, 292 (2012). http://doi.org/10.1109/TED.2011.2175228
Abstract: Germanium is a widely used material for tunnel FETs because of its small band gap and compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is considered. However, direct band-to-band tunneling (BTBT) in Ge should be included in tunnel FET modeling and simulations since the energy difference between the Ge conduction band edges at the L and G valleys is only 0.14 eV at room temperature. In this paper, we theoretically calculate the parameters A and B of Kane's direct and indirect BTBT models at different tunneling directions ([100], [110], and [111]) for Si, Ge and unstrained Si1-xGex. We highlight how the direct BTBT component becomes more important as the Ge mole fraction increases. The calculation of the band-to-band generation rate in the uniform electric field limit reveals that direct tunneling always dominates over indirect tunneling in Ge. The impact of the direct transition in Ge on the performance of two realistic tunnel field-effect transistor configurations is illustrated with TCAD simulations. The influence of field-induced quantum confinement is included in the analysis based on a back-of-the-envelope calculation.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.605
Times cited: 212
DOI: 10.1109/TED.2011.2175228
|
|
|
“Prediction of the decomposition tendency of C5F10O on discharged metal surfaces”. Cui Z, Jafarzadeh A, Hao Y, Liu L, Li L, Zheng Y, IEEE transactions on dielectrics and electrical insulation 30, 1365 (2023). http://doi.org/10.1109/TDEI.2023.3263129
Abstract: In this letter, a dipole sheet method is proposed to theoretically study the adsorption and decomposition of C5F10O over-discharged Cu (111) and Al (111) surfaces. A synergistic effect of external electric fields and surface excess charges shows up for jointly promoting the adsorption of C5F10O, accompanied by the enhancement of C-F bond elongation and charge transfer process. The decomposition of C5F10O is facilitated in the discharged region and the initial decomposition is found most likely to occur via the cleavage of the C-F single bond. The results indicate that the decomposition of C5F10O over the metal electrode surfaces is much accelerated when discharge faults occur and free F atoms could be generated from C5F10O before its carbon chain breakage. These findings help to elucidate the underlying decomposition tendency of C5F10O in discharged systems and provide a practical method for evaluating and designing new insulation gases.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.1
DOI: 10.1109/TDEI.2023.3263129
|
|
|
“Modeling of electroporation induced by pulsed electric fields in irregularly shaped cells”. Mescia L, Chiapperino MA, Bia P, Gielis J, Caratelli D, IEEE transactions on biomedical engineering 65, 414 (2018). http://doi.org/10.1109/TBME.2017.2771943
Abstract: During the past decades, the poration of cell membrane induced by pulsed electric fields has been widely investigated. Since the basic mechanisms of this process have not yet been fully clarified, many research activities are focused on the development of suitable theoretical and numerical models. To this end, a nonlinear, nonlocal, dispersive, and space-time numerical algorithm has been developed and adopted to evaluate the transmembrane voltage and pore density along the perimeter of realistic irregularly shaped cells. The presented model is based on the Maxwell's equations and the asymptotic Smoluchowski's equation describing the pore dynamics. The dielectric dispersion of the media forming the cell has been modeled by using a general multirelaxation Debye-based formulation. The irregular shape of the cell is described by using the Gielis' superformula. Different test cases pertaining to red blood cells, muscular cells, cell in mitosis phase, and cancer-like cell have been investigated. For each type of cell, the influence of the relevant shape, the dielectric properties, and the external electric pulse characteristics on the electroporation process has been analyzed. The numerical results demonstrate that the proposed model is an efficient numerical tool to study the electroporation problem in arbitrary-shaped cells.
Keywords: A1 Journal article; Sustainable Energy, Air and Water Technology (DuEL)
DOI: 10.1109/TBME.2017.2771943
|
|
|
“Transmission electron microscopy on interface engineered superconducting thin films”. Bals S, Van Tendeloo G, Rijnders G, Huijben M, Leca V, Blank DHA, IEEE transactions on applied superconductivity 13, 2834 (2003). http://doi.org/10.1109/TASC.2003.812023
Abstract: Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2Ox buffer layer can avoid a variable interface configuration in YBa2Cu3O7-delta thin films grown on SrTiO3. The growth can also be controlled at an atomic level by, using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0.85La0.15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 13
DOI: 10.1109/TASC.2003.812023
|
|
|
“Large variation in temperature dependence of band-to-band tunneling current in tunnel devices”. Bizindavyi J, Verhulst AS, Verreck D, Sorée B, Groeseneken G, IEEE electron device letters 40, 1864 (2019). http://doi.org/10.1109/LED.2019.2939668
Abstract: The observation of a significant temperature-dependent variation in the ${I}$ – ${V}$ characteristics of tunneling devices is often interpreted as a signature of a trap-assisted-tunneling dominated current. In this letter, we use a ballistic 2D quantum-mechanical simulator, calibrated using the measured temperature-dependent ${I}$ – ${V}$ characteristics of Esaki diodes, to demonstrate that the temperature dependence of band-to-band tunneling (BTBT) current can vary significantly in both Esaki diodes and tunnel FETs. The variation of BTBT current with temperature is impacted by doping concentration, gate voltage, possible presence of a highly-doped pocket at the tunnel junction, and material.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.048
DOI: 10.1109/LED.2019.2939668
|
|
|
“Modeling of edge scattering in graphene interconnects”. Contino A, Ciofi I, Wu X, Asselberghs I, Celano U, Wilson CJ, Tokei Z, Groeseneken G, Sorée B, IEEE electron device letters 39, 1085 (2018). http://doi.org/10.1109/LED.2018.2833633
Abstract: Graphene interconnects are being considered as a promising candidate for beyond CMOS applications, thanks to the intrinsic higher carrier mobility, lower aspect ratio and better reliability with respect to conventional Cu damascene interconnects. However, similarly to Cu, line edge roughness can seriously affect graphene resistance, something which must be taken into account when evaluating the related performance benefits. In this letter, we present a model for assessing the impact of edge scattering on the resistance of graphene interconnects. Our model allows the evaluation of the total mean free path in graphene lines as a function of graphene width, diffusive scattering probability and edge roughness standard deviation and autocorrelation length. We compare our model with other models from literature by benchmarking them using the same set of experimental data. We show that, as opposed to the considered models from literature, our model is capable to describe the mobility drop with scaling caused by significantly rough edges.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.048
Times cited: 1
DOI: 10.1109/LED.2018.2833633
|
|
|
“Intrinsic tailing of resistive states distributions in amorphous <tex>HfOx </tex>, and TaOx based resistive random access memories”. Clima S, Chen YY, Fantini A, Goux L, Degraeve R, Govoreanu B, Pourtois G, Jurczak M, IEEE electron device letters 36, 769 (2015). http://doi.org/10.1109/LED.2015.2448731
Abstract: We report on the ineffectiveness of programming oxide-based resistive random access memory (OxRAM) at low current with a program and verify algorithm due to intrinsic relaxation of the verified distribution to the natural state distribution obtained by single-pulse programming without verify process. Based on oxygen defect formation thermodynamics and on their diffusion barriers in amorphous HfOx and TaOx, we describe the intrinsic nature of tailing of the verified low resistive state and high resistive state distributions. We introduce different scenarios to explain fast distribution widening phenomenon, which is a fundamental limitation for OxRAM current scaling and device reliability.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.048
Times cited: 33
DOI: 10.1109/LED.2015.2448731
|
|
|
“Superior reliability of junctionless pFinFETs by reduced oxide electric field”. Toledano-Luque M, Matagne P, Sibaja-Hernandez A, Chiarella T, Ragnarsson L-A, Sorée B, Cho M, Mocuta A, Thean A, IEEE electron device letters 35, 1179 (2014). http://doi.org/10.1109/LED.2014.2361769
Abstract: Superior reliability of junctionless (JL) compared with inversion-mode field-effect transistors (FETs) is experimentally demonstrated on bulk FinFET wafers. The reduced negative bias temperature instability (NBTI) of JL pFETs outperforms the previously reported best NBTI reliability data obtained with Si channel devices and guarantees 10-year lifetime at typical operating voltages and high temperature. This behavior is understood through the reduced oxide electric field and lessened interaction between charge carriers and oxide traps during device operation. These findings encourage the investigation of JL devices with alternative channels as a promising alternative for 7-nm technology nodes meeting reliability targets.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.048
Times cited: 13
DOI: 10.1109/LED.2014.2361769
|
|
|
“Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations”. Clima S, Kaczer B, Govoreanu B, Popovici M, Swerts J, Verhulst AS, Jurczak M, De Gendt S, Pourtois G, IEEE electron device letters 34, 402 (2013). http://doi.org/10.1109/LED.2013.2238885
Abstract: First-principle complex band structures have been computed for rutile TiO2 and tetragonal ZrO2 insulating materials that are of current technological relevance to dynamic random accessmemorymetal-insulator-metal (MIM) capacitors. From the magnitude of the complex wave vectors in different orientations, the most penetrating orientations have been identified. Tunneling effective masses m(tunnel) have been extracted, are shown to be a crucial parameter for the intrinsic leakage, and are identified to be an important parameter in further scaling of MIM capacitors.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 3.048
Times cited: 3
DOI: 10.1109/LED.2013.2238885
|
|
|
“Temperature-dependent modeling and characterization of through-silicon via capacitance”. Katti G, Stucchi M, Velenis D, Sorée B, de Meyer K, Dehaene W, IEEE electron device letters 32, 563 (2011). http://doi.org/10.1109/LED.2011.2109052
Abstract: A semianalytical model of the through-silicon via (TSV) capacitance for elevated operating temperatures is derived and verified with electrical measurements. The effect of temperature on the increase in TSV capacitance over different technology parameters is explored, and it is shown that higher oxide thickness reduces the impact of temperature rise on TSV capacitance, while with low doped substrates, which are instrumental for reducing the TSV capacitance, the sensitivity of TSV capacitance to temperature is large and cannot be ignored.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.048
Times cited: 27
DOI: 10.1109/LED.2011.2109052
|
|
|
“Low Loss Atomic Layer Deposited Al2O3 Waveguides for Applications in On-Chip Optical Amplifiers”. Demirtas M, Odaci C, Perkgoz NK, Sevik C, Ay F, IEEE journal of selected topics in quantum electronics 24, 3100508 (2018). http://doi.org/10.1109/JSTQE.2018.2825880
Abstract: We present the growth and optimization of ultralow loss Si-based Al2O3 planar waveguides, which have a high potential to boost the performance of rare-earth ion doped waveguide devices operating at visible and C-band wavelength ranges. The planar waveguide structures are grown using thermal atomic layer deposition. Systematic characterization of the obtained thin films is performed by spectroscopic ellipsometry, X-ray diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy analyses, and the optimum parameters are identified. The optical loss measurements for both transverse electric (TE) and transverse magnetic polarized light at 633, 829, and 1549 nm are performed. The lowest propagation loss value of 0.04 +/- 0.02 dB/cm for the Al2O3 waveguides for TE polarization at 1549 nm is demonstrated.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
DOI: 10.1109/JSTQE.2018.2825880
|
|
|
“A multisensor hyperspectral benchmark dataset for unmixing of intimate mixtures”. Koirala B, Rasti B, Bnoulkacem Z, de Lima Ribeiro A, Madriz Y, Herrmann E, Gestels A, De Kerf T, Lorenz S, Fuchs M, Janssens K, Steenackers G, Gloaguen R, Scheunders P, IEEE sensors journal 24, 4694 (2024). http://doi.org/10.1109/JSEN.2023.3343552
Abstract: Optical hyperspectral cameras capture the spectral reflectance of materials. Since many materials behave as heterogeneous intimate mixtures with which each photon interacts differently, the relationship between spectral reflectance and material composition is very complex. Quantitative validation of spectral unmixing algorithms requires high-quality ground truth fractional abundance data, which are very difficult to obtain. In this work, we generated a comprehensive laboratory ground truth dataset of intimately mixed mineral powders. For this, five clay powders (Kaolin, Roof clay, Red clay, mixed clay, and Calcium hydroxide) were mixed homogeneously to prepare 325 samples of 60 binary, 150 ternary, 100 quaternary, and 15 quinary mixtures. Thirteen different hyperspectral sensors have been used to acquire the reflectance spectra of these mixtures in the visible, near, short, mid, and long-wavelength infrared regions (350-15385) nm. Overlaps in wavelength regions due to the operational ranges of each sensor and variations in acquisition conditions resulted in a large amount of spectral variability. Ground truth composition is given by construction, but to verify that the generated samples are sufficiently homogeneous, XRD and XRF elemental analysis is performed. We believe these data will be beneficial for validating advanced methods for nonlinear unmixing and material composition estimation, including studying spectral variability and training supervised unmixing approaches. The datasets can be downloaded from the following link: https://github.com/VisionlabHyperspectral/Multisensor_datasets.
Keywords: A1 Journal article; Engineering sciences. Technology; Vision lab; Antwerp X-ray Imaging and Spectroscopy (AXIS)
Impact Factor: 4.3
DOI: 10.1109/JSEN.2023.3343552
|
|
|
“Anisotropic etching of CVD grown graphene for ammonia sensing”. Yagmurcukardes N, Bayram A, Aydin H, Yagmurcukardes M, Acikbas Y, Peeters FM, Celebi C, IEEE sensors journal 22, 3888 (2022). http://doi.org/10.1109/JSEN.2022.3146220
Abstract: Bare chemical vapor deposition (CVD) grown graphene (GRP) was anisotropically etched with various etching parameters. The morphological and structural characterizations were carried out by optical microscopy and the vibrational properties substrates were obtained by Raman spectroscopy. The ammonia adsorption and desorption behavior of graphene-based sensors were recorded via quartz crystal microbalance (QCM) measurements at room temperature. The etched samples for ambient NH3 exhibited nearly 35% improvement and showed high resistance to humidity molecules when compared to bare graphene. Besides exhibiting promising sensitivity to NH3 molecules, the etched graphene-based sensors were less affected by humidity. The experimental results were collaborated by Density Functional Theory (DFT) calculations and it was shown that while water molecules fragmented into H and O, NH3 interacts weakly with EGPR2 sample which reveals the enhanced sensing ability of EGPR2. Apparently, it would be more suitable to use EGRP2 in sensing applications due to its sensitivity to NH3 molecules, its stability, and its resistance to H2O molecules in humid ambient.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.3
Times cited: 4
DOI: 10.1109/JSEN.2022.3146220
|
|
|
“FLCS-PON : a 100 Gbit/s flexible passive optical network: concepts and field trial”. Borkowski R, Straub M, Ou Y, Lefevre Y, Jelić, ŽL, Lanneer W, Kaneda N, Mahadevan A, Hueckstaedt V, van Veen D, Houtsma V, Coomans W, Bonk R, Maes J, Journal Of Lightwave Technology 39, 5314 (2021). http://doi.org/10.1109/JLT.2021.3102383
Abstract: We demonstrate concepts and results of a field trial for a flexible-rate passive optical network (FLCS-PON), which delivers bitrates up to 100 Gbit/s and allows for adaptations in the transmission method to match the users' channel conditions and optimize throughput. FLCS-PON builds on top of the hardware ecosystem that will be developed for ITU-T 50 Gbit/s PON and employs three new ingredients: optical network unit (ONU) grouping, flexible modulation format, and flexible forward error correction (FEC) code rate. Together, these techniques take advantage of the optical distribution network (ODN) statistics to realize a system capable of more than twofold throughput increase compared to the upcoming 50 Gbit/s PON, but still able to support a full array of deployed fiber edge cases, which are problematic for legacy PONs. In this paper we explain the concepts behind enabling techniques of FLCS-PON. We then report on a field trial over a deployed fiber infrastructure, using a system consisting of one FLCS-PON OLT and two ONUs. We report both pre- and post-forward-error-correction (post-FEC) performance of our system, demonstrating achievable net bitrate over an operator's fiber infrastructure. We realize a downlink transmission at double the speed of ITU-T 50 Gbit/s PON for ONUs exhibiting lower optical path loss (OPL), while simultaneously continue to support ONUs at high OPLs. We additionally realize a record-high 31.5 dB loss budget for 100 Gbit/s transmission using a direct-detection ONU with an optical preamplifier.
Keywords: A1 Journal article; Mass communications; Condensed Matter Theory (CMT)
Impact Factor: 3.671
DOI: 10.1109/JLT.2021.3102383
|
|
|
“HRTF measurement by means of unsupervised head movements with respect to a single fixed speaker”. Reijniers J, Partoens B, Steckel J, Peremans H, Ieee Access 8, 92287 (2020). http://doi.org/10.1109/ACCESS.2020.2994932
Abstract: In a standard state-of-the-art measurement the head-related transfer function (HRTF) is obtained in an anechoic room with an elaborate setup involving multiple calibrated loudspeakers. In search for a simplified method that would open up the possibility for an HRTF measurement in a home environment, it has been suggested that this setup could be replaced with one with a single, fixed loudspeaker. In such a setup, the subject samples different directions by moving the head with respect to this loudspeaker, while the head movements are tracked in some way. In this paper, the feasibility of such an approach is studied. To this end, the HRTF is measured in an unmodified (non-anechoic) room by means of a single external speaker and a high resolution head tracking system. The differences between the dynamically obtained HRTF and the standard static HRTF are investigated, and are shown to be mostly due to variable torso reflections.
Keywords: A1 Journal article; Mass communications; Engineering Management (ENM); Condensed Matter Theory (CMT); Co-Design of Cyber-Physical Systems (Cosys-Lab)
Impact Factor: 3.9
Times cited: 4
DOI: 10.1109/ACCESS.2020.2994932
|
|
|
“Monte Carlo model for the argon ions and fast argon atoms in a radio-frequency discharge”. Bogaerts A, Gijbels R, IEEE transactions on plasma science 27, 1406 (1999). http://doi.org/10.1109/27.799819
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.052
Times cited: 15
DOI: 10.1109/27.799819
|
|
|
“Semianalytical description of nonlocal secondary electrons in a radio-frequency capacitively coupled plasma at intermediate pressures”. Berezhnoi S, Kaganovich I, Misina M, Bogaerts A, Gijbels R, IEEE transactions plasma science 27, 1339 (1999). http://doi.org/10.1109/27.799810
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 1.052
Times cited: 7
DOI: 10.1109/27.799810
|
|
|
“High-resolution X-ray fluorescence microtomography of homogeneous samples”. Simionovici AS, Chukalina M, Schroer C, Drakopoulos M, Snigirev A, Snigireva I, Lengeler B, Janssens K, Adams F, IEEE transactions on nuclear science 47, 2736 (2000). http://doi.org/10.1109/23.901180
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Impact Factor: 1.171
DOI: 10.1109/23.901180
|
|
|
“Structure solution and refinement of metal-ion battery cathode materials using electron diffraction tomography”. Hadermann J, Abakumov AM, And Materials 75, 485 (2019). http://doi.org/10.1107/S2052520619008291
Abstract: The applicability of electron diffraction tomography to the structure solution and refinement of charged, discharged or cycled metal-ion battery positive electrode (cathode) materials is discussed in detail. As these materials are often only available in very small amounts as powders, the possibility of obtaining single-crystal data using electron diffraction tomography (EDT) provides unique access to crucial information complementary to X-ray diffraction, neutron diffraction and high-resolution transmission electron microscopy techniques. Using several examples, the ability of EDT to be used to detect lithium and refine its atomic position and occupancy, to solve the structure of materials ex situ at different states of charge and to obtain in situ data on structural changes occurring upon electrochemical cycling in liquid electrolyte is discussed.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 2
DOI: 10.1107/S2052520619008291
|
|
|
“XRDUA : crystalline phase distribution maps by two-dimensional scanning and tomographic (micro) X-ray powder diffraction”. de Nolf W, Vanmeert F, Janssens K, Journal of applied crystallography 47, 1107 (2014). http://doi.org/10.1107/S1600576714008218
Abstract: Imaging of crystalline phase distributions in heterogeneous materials, either plane projected or in virtual cross sections of the object under investigation, can be achieved by scanning X-ray powder diffraction employing X-ray micro beams and X-ray-sensitive area detectors. Software exists to convert the two-dimensional powder diffraction patterns that are recorded by these detectors to one-dimensional diffractograms, which may be analysed by the broad variety of powder diffraction software developed by the crystallography community. However, employing these tools for the construction of crystalline phase distribution maps proves to be very difficult, especially when employing micro-focused X-ray beams, as most diffraction software tools have mainly been developed having structure solution in mind and are not suitable for phase imaging purposes. XRDUA has been developed to facilitate the execution of the complete sequence of data reduction and interpretation steps required to convert large sequences of powder diffraction patterns into a limited set of crystalline phase maps in an integrated fashion.
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
Times cited: 62
DOI: 10.1107/S1600576714008218
|
|
|
“KSm(MoO4)2, an incommensurately modulated and partially disordered scheelite-like structure”. Arakcheeva A, Pattison P, Chapuis G, Rossell M, Filaretov A, Morozov V, Van Tendeloo G, Acta crystallographica: section B: structural science 64, 160 (2008). http://doi.org/10.1107/S0108768108001870
Abstract: The incommensurately modulated scheelite-like KSm( MoO4)(2) structure has been refined in the monoclinic superspace group I2/b(alpha beta 0)00 by the Rietveld method on the basis of synchrotron radiation powder diffraction data. The systematic broadening of satellite reflections has been accounted for by applying anisotropic microstrain line-broadening. The microstructure has been studied by transmission electron microscopy (TEM). The partial disorder of the K and Sm cations in the A position is best approximated by a combination of harmonic and complex crenel functions with (0.952Sm + 0.048K) and (0.952K + 0.048Sm) atomic domains. This combination yields a compositional wave distribution from {KMoO4} to {SmMoO4} observed in the ab structure projection along q. The specific features of KSm(MoO4)(2) and degree of the A-cation ordering are discussed in comparison with the previously reported structure of KNd(MoO4)(2).
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 23
DOI: 10.1107/S0108768108001870
|
|
|
“Electron-diffraction structure refinement of Ni4Ti3 precipitates in Ni52Ti48”. Tirry W, Schryvers D, Jorissen K, Lamoen D, Acta crystallographica: section B: structural science 62, 966 (2006). http://doi.org/10.1107/S0108768106036457
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Times cited: 30
DOI: 10.1107/S0108768106036457
|
|
|
“The phase transition and crystal structures of Ba3RM2O7.5 complex oxides (R=rare-earth elements, M = Al,Ga)”. Abakumov AM, Shpanchenko RV, Lebedev OI, Van Tendeloo G, Amelinckx S, Antipov EV, Acta crystallographica: section A: foundations of crystallography 55, 828 (1999). http://doi.org/10.1107/S0108767399002068
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.725
Times cited: 7
DOI: 10.1107/S0108767399002068
|
|
|
“Room temperature and low-temperature structure of Nd1-xCaxMnO3 (0.3*x*0.5)”. Richard O, Schuddinck W, Van Tendeloo G, Millange F, Hervieu M, Caignaert C, Raveau B, Acta crystallographica: section A: foundations of crystallography 55, 704 (1999). http://doi.org/10.1107/S0108767398012215
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.725
Times cited: 24
DOI: 10.1107/S0108767398012215
|
|
|
“Orientational order and disorder in solid C60 : theory and diffraction experiments”. Michel KH, Lamoen D, David WIF, Acta crystallographica: section A: foundations of crystallography 51, 365 (1995). http://doi.org/10.1107/S0108767394013280
Abstract: Starting from a microscope model of the intermolecular potential, a unified description is presented of the Bragg scattering law in the orientationally disordered and in the ordered phase of solid C-60. The orientational structure factor is expanded in terms of symmetry-adapted surface harmonics. The expansion coefficients are calculated from theory and compared with experiment Their temperature evolution is studied in the disordered phase at the 260 K transitions and in the ordered phase. In the ordered phase, new results from high-resolution neutron powder diffraction are given. In the disordered phase, space group Fm $($) over bar$$ 3m, the reflections have A(1g) symmetry; in the ordered phase, space group Pa $$($) over bar 3, reflections of T-2g symmetry appear and in addition the A(1g) reflections are renormalized. The orientational density distribution is calculated. The effective crystal-field potential is constructed, its temperature evolution in the ordered phase is studied and related to the occurrence of an orientational glass.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.307
Times cited: 14
DOI: 10.1107/S0108767394013280
|
|