Abstract: The rate of iron(II) oxidation in North Sea water of pH 5.510 in the range 1025°C has been studied. The oxygenation rate depends linearly on the iron(II) and dissolved oxygen concentrations. The second-order dependence on [OH−], found by several investigators for synthetic solutions, was confirmed in seawater, but only for pOH > 6.9. For pOH < 5.9 the rate appeared to be independent of the pOH. In the intermediate range, pOH 5.96.9, corresponding to the natural pH of seawater, a first-order dependence on the pOH is obeyed. The important discrepancy in the literature between the second-order rate constant for NaCHO3 solutions and for seawater can be attributed predominantly to the incorrect assumption of a second-order pOH dependence in natural seawater. The results can be useful, for example, in predicting the effect of dumping acidic iron waste from the titanium-dioxide industry into the ocean.

Abstract: For column structures, such as fee-based alloys viewed along the cube direction, the concept of electron channelling through the atom columns is more and more used to interpret the corresponding HREM images. In the case of(partially) disordered columns, the projected potential approach which is used in the channelling description must be questioned since the arrangement of the atoms along the beam direction might affect the exit wave of the electrons. In this paper, we critically inspect this top-bottom effect using multi-slice calculations. A modified channelling theory is introduced which turns out to be very appropriate for the interpretation of these results. For substitutionally disordered column structures, it is also discussed how to link the chemical composition of the material to statistical data of the HREM image. This results in a convenient tool to discern images taken at different thicknesses and focus values.

Abstract: In this paper a particularly simple but efficient method is presented by which samples of alkali-doped C-60 materials or other air-sensitive materials can be prepared and transferred into a transmission electron microscope for direct observations and investigations. Flexible, transparent glove bags are used which are filled to a slight overpressure with dry nitrogen. Under this protective atmosphere, the air-sensitive sample is mounted in the specimen holder and inserted in the vacuum of the electron microscope. Rb6C60 which is prepared and transferred into the microscope in this way has been investigated by transmission electron microscopy (TEM). The results confirm the bcc structure and especially the location of the rubidium atoms.

Abstract: The sulphite and sulphate concentrations in weathering products of limestone and in wet and total deposition samples were measured by the modified West-Gaeke method and by ion chromatography. The sulphite content in the weathering crust and in the runoff rainwater of two historical buildings in Belgium, was always much lower than the sulphate content. The maximum sulphite to sulphate ratio was 2·5%. The sulphite concentration in wet and total deposition samples was in the low or sub ppm range except during two misty periods when the sulphite concentration was 6·8 and 21 mg litre−1. In those samples a high sulphate concentration was also found (nl. 57 and 137 mg litre−1, respectively).

Abstract: In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si.

Abstract: The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.

Abstract: Bilayers of carbon, consisting of a layer of natural carbon and a second layer highly enriched in 13C, were investigated with the LAMMA 500-® instrument. When such a bilayer is perforated by the laser beam, comparable amounts of 12C and 13C are evaporated and partly ionized so that geometry effects and recombination reactions during laser-induced ionization can straightforwardly be studied.