Egoavil R (2014) STEM investigation of complex oxides at the atomic scale. Antwerpen
Keywords: Doctoral thesis; Electron microscopy for materials research (EMAT)
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“Atomic layer epitaxy of Ruddlesden-Popper SrO(SrTiO3)n films by means of metalorganic aerosol deposition”. Jungbauer M, Huehn S, Egoavil R, Tan H, Verbeeck J, Van Tendeloo G, Moshnyaga V, Applied physics letters 105, 251603 (2014). http://doi.org/10.1063/1.4905055
Abstract: We report an atomic layer epitaxial growth of Ruddlesden-Popper (RP) thin films of SrO(SrTiO3)(n) (n = infinity, 2, 3, 4) by means of metalorganic aerosol deposition (MAD). The films are grown on SrTiO3(001) substrates by means of a sequential deposition of Sr-O/Ti-O-2 atomic monolayers, monitored in-situ by optical ellipsometry. X-ray diffraction and transmission electron microscopy (TEM) reveal the RP structure with n = 2-4 in accordance with the growth recipe. RP defects, observed by TEM in a good correlation with the in-situ ellipsometry, mainly result from the excess of SrO. Being maximal at the film/substrate interface, the SrO excess rapidly decreases and saturates after 5-6 repetitions of the SrO(SrTiO3)(4) block at the level of 2.4%. This identifies the SrTiO3 substrate surface as a source of RP defects under oxidizing conditions within MAD. Advantages and limitations of MAD as a solution-based and vacuum-free chemical deposition route were discussed in comparison with molecular beam epitaxy. (C) 2014 AIP Publishing LLC.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 32
DOI: 10.1063/1.4905055
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“Atomic resolution mapping of phonon excitations in STEM-EELS experiments”. Egoavil R, Gauquelin N, Martinez GT, Van Aert S, Van Tendeloo G, Verbeeck J, Ultramicroscopy 147, 1 (2014). http://doi.org/10.1016/j.ultramic.2014.04.011
Abstract: Atomically resolved electron energy-loss spectroscopy experiments are commonplace in modern aberration-corrected transmission electron microscopes. Energy resolution has also been increasing steadily with the continuous improvement of electron monochromators. Electronic excitations however are known to be delocalized due to the long range interaction of the charged accelerated electrons with the electrons in a sample. This has made several scientists question the value of combined high spatial and energy resolution for mapping interband transitions and possibly phonon excitation in crystals. In this paper we demonstrate experimentally that atomic resolution information is indeed available at very low energy losses around 100 meV expressed as a modulation of the broadening of the zero loss peak. Careful data analysis allows us to get a glimpse of what are likely phonon excitations with both an energy loss and gain part. These experiments confirm recent theoretical predictions on the strong localization of phonon excitations as opposed to electronic excitations and show that a combination of atomic resolution and recent developments in increased energy resolution will offer great benefit for mapping phonon modes in real space.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 22
DOI: 10.1016/j.ultramic.2014.04.011
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“Atomic scale investigation of a PbTiO3/SrRuO3/DyScO3 heterostructure”. Egoavil R, Tan H, Verbeeck J, Bals S, Smith B, Kuiper B, Rijnders G, Koster G, Van Tendeloo G, Applied physics letters 102, 223106 (2013). http://doi.org/10.1063/1.4809597
Abstract: An epitaxial PbTiO3 thin film grown on self-organized crystalline SrRuO3 nanowires deposited on a DyScO3 substrate with ordered DyO and ScO2 chemical terminations is investigated by transmission electron microscopy. In this PbTiO3/SrRuO3/DyScO3 heterostructure, the SrRuO3 nanowires are assumed to grow on only one type of substrate termination. Here, we report on the structure, morphology, and chemical composition analysis of this heterostructure. Electron energy loss spectroscopy reveals the exact termination sequence in this complex structure. The energy loss near-edge structure of the Ti-L-2,L-3, Sc-L-2,L-3, and O K edges shows intrinsic interfacial electronic reconstruction. Furthermore, PbTiO3 domain walls are observed to start at the end of the nanowires resulting in atomic steps on the film surface. (C) 2013 AIP Publishing LLC.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 12
DOI: 10.1063/1.4809597
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“Chemical insight into electroforming of resistive switching manganite heterostructures”. Borgatti F, Park C, Herpers A, Offi F, Egoavil R, Yamashita Y, Yang A, Kobata M, Kobayashi K, Verbeeck J, Panaccione G, Dittmann R;, Nanoscale 5, 3954 (2013). http://doi.org/10.1039/c3nr00106g
Abstract: We have investigated the role of the electroforming process in the establishment of resistive switching behaviour for Pt/Ti/Pr0.5Ca0.5MnO3/SrRuO3 layered heterostructures (Pt/Ti/PCMO/SRO) acting as non-volatile Resistance Random Access Memories (RRAMs). Electron spectroscopy measurements demonstrate that the higher resistance state resulting from electroforming of as-prepared devices is strictly correlated with the oxidation of the top electrode Ti layer through field-induced electromigration of oxygen ions. Conversely, PCMO exhibits oxygen depletion and downward change of the chemical potential for both resistive states. Impedance spectroscopy analysis, supported by the detailed knowledge of these effects, provides an accurate model description of the device resistive behaviour. The main contributions to the change of resistance from the as-prepared (low resistance) to the electroformed (high resistance) states are respectively due to reduced PCMO at the boundary with the Ti electrode and to the formation of an anisotropic np junction between the Ti and the PCMO layers.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.367
Times cited: 40
DOI: 10.1039/c3nr00106g
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“Enhanced local magnetization by interface engineering in perovskite-type correlated oxide heterostructures”. Huijben M, Liu Y, Boschker H, Lauter V, Egoavil R, Verbeeck J, te Velthuis SGE, Rijnders G, Koster G, Advanced Materials Interfaces 2, 1400416 (2015). http://doi.org/10.1002/admi.201400416
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.279
Times cited: 30
DOI: 10.1002/admi.201400416
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“Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping”. Chen YZ, Trier F, Wijnands T, Green RJ, Gauquelin N, Egoavil R, Christensen DV, Koster G, Huijben M, Bovet N, Macke S, He F, Sutarto R, Andersen NH, Sulpizio JA, Honig M, Prawiroatmodjo GEDK, Jespersen TS, Linderoth S, Ilani S, Verbeeck J, Van Tendeloo G, Rijnders G, Sawatzky GA, Pryds N, Nature materials 14, 801 (2015). http://doi.org/10.1038/nmat4303
Abstract: Two-dimensional electron gases (2DEGs) formed at the interface of insulating complex oxides promise the development of all-oxide electronic devices. These 2DEGs involve many-body interactions that give rise to a variety of physical phenomena such as superconductivity, magnetism, tunable metalinsulator transitions and phase separation. Increasing the mobility of the 2DEG, however, remains a major challenge. Here, we show that the electron mobility is enhanced by more than two orders of magnitude by inserting a single-unit-cell insulating layer of polar La1−xSrxMnO3 (x = 0, 1/8, and 1/3) at the interface between disordered LaAlO3 and crystalline SrTiO3 produced at room temperature. Resonant X-ray spectroscopy and transmission electron microscopy show that the manganite layer undergoes unambiguous electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. At low temperatures, the modulation-doped 2DEG exhibits Shubnikovde Haas oscillations and fingerprints of the quantum Hall effect, demonstrating unprecedented high mobility and low electron density.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 39.737
Times cited: 170
DOI: 10.1038/nmat4303
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“High resolution mapping of surface reduction in ceria nanoparticles”. Turner S, Lazar S, Freitag B, Egoavil R, Verbeeck J, Put S, Strauven Y, Van Tendeloo G, Nanoscale 3, 3385 (2011). http://doi.org/10.1039/c1nr10510h
Abstract: Surface reduction of ceria nano octahedra with predominant {111} and {100} type surfaces is studied using a combination of aberration-corrected Transmission Electron Microscopy (TEM) and spatially resolved electron energy-loss spectroscopy (EELS) at high energy resolution and atomic spatial resolution. The valency of cerium ions at the surface of the nanoparticles is mapped using the fine structure of the Ce M4,5 edge as a fingerprint. The valency of the surface cerium ions is found to change from 4+ to 3+ owing to oxygen deficiency (vacancies) close to the surface. The thickness of this Ce3+ shell is measured using atomic-resolution Scanning Transmission Electron Microscopy (STEM)-EELS mapping over a {111} surface (the predominant facet for this ceria morphology), {111} type surface island steps and {100} terminating planes. For the {111} facets and for {111} surface islands, the reduction shell is found to extend over a single fully reduced surface plane and 12 underlying mixed valency planes. For the {100} facets the reduction shell extends over a larger area of 56 oxygen vacancy-rich planes. This finding provides a plausible explanation for the higher catalytic activity of the {100} surface facets in ceria.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 7.367
Times cited: 127
DOI: 10.1039/c1nr10510h
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“Homogeneity and composition of AlInGaN : a multiprobe nanostructure study”. Krause FF, Ahl JP, Tytko D, Choi PP, Egoavil R, Schowalter M, Mehrtens T, Müller-Caspary K, Verbeeck J, Raabe D, Hertkorn J, Engl K, Rosenauer A, Ultramicroscopy 156, 29 (2015). http://doi.org/10.1016/j.ultramic.2015.04.012
Abstract: The electronic properties of quaternary AlInGaN devices significantly depend on the homogeneity of the alloy. The identification of compositional fluctuations or verification of random-alloy distribution is hence of grave importance. Here, a comprehensive multiprobe study of composition and compositional homogeneity is presented, investigating AlInGaN layers with indium concentrations ranging from 0 to 17 at% and aluminium concentrations between 0 and 39 at% employing high-angle annular dark field scanning electron microscopy (HAADF STEM), energy dispersive X-ray spectroscopy (EDX) and atom probe tomography (APT). EDX mappings reveal distributions of local concentrations which are in good agreement with random alloy atomic distributions. This was hence investigated with HAADF STEM by comparison with theoretical random alloy expectations using statistical tests. To validate the performance of these tests, HAADF STEM image simulations were carried out for the case of a random-alloy distribution of atoms and for the case of In-rich clusters with nanometer dimensions. The investigated samples, which were grown by metal-organic vapor phase epitaxy (MOVPE), were thereby found to be homogeneous on this nanometer scale. Analysis of reconstructions obtained from APT measurements yielded matching results. Though HAADF STEM only allows for the reduction of possible combinations of indium and aluminium concentrations to the proximity of isolines in the two-dimensional composition space. The observed ranges of composition are in good agreement with the EDX and APT results within the respective precisions.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 11
DOI: 10.1016/j.ultramic.2015.04.012
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“Interlayer structure in YBCO-coated conductors prepared by chemical solution deposition”. Molina L, Egoavil R, Turner S, Thersleff T, Verbeeck J, Holzapfel B, Eibl O, Van Tendeloo G, Superconductor science and technology 26, 075016 (2013). http://doi.org/10.1088/0953-2048/26/7/075016
Abstract: The functionality of YBa2Cu3O7−δ (YBCO)-coated conductor technology depends on the reliability and microstructural properties of a given tape or wire architecture. Particularly, the interface to the metal tape is of interest since it determines the adhesion, mechanical stability of the film and thermal contact of the film to the substrate. A trifluoroacetate (TFA)metal organic deposition (MOD) prepared YBCO film deposited on a chemical solution-derived buffer layer architecture based on CeO2/La2Zr2O7 and grown on a flexible Ni5 at.%W substrate with a {100}⟨001⟩ biaxial texture was investigated. The YBCO film had a thickness was 440 nm and a jc of 1.02 MA cm−2 was determined at 77 K and zero external field. We present a sub-nanoscale analysis of a fully processed solution-derived YBCO-coated conductor by aberration-corrected scanning transmission electron microscopy (STEM) combined with electron energy-loss spectroscopy (EELS). For the first time, structural and chemical analysis of the valence has been carried out on the sub-nm scale. Intermixing of Ni, La, Ce, O and Ba takes place at these interfaces and gives rise to nanometer-sized interlayers which are a by-product of the sequential annealing process. Two distinct interfacial regions were analyzed in detail: (i) the YBCO/CeO2/La2Zr2O7 region (10 nm interlayer) and (ii) the La2Zr2O7/Ni5 at.%W substrate interface region (20 nm NiO). This is of particular significance for the functionality of these YBCO-coated conductor architectures grown by chemical solution deposition.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.878
Times cited: 11
DOI: 10.1088/0953-2048/26/7/075016
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“Mapping electronic reconstruction at the metal-insulator interface in LaVO3/SrVO3 heterostructures”. Tan H, Egoavil R, Béché, A, Martinez GT, Van Aert S, Verbeeck J, Van Tendeloo G, Rotella H, Boullay P, Pautrat A, Prellier W, Physical review : B : condensed matter and materials physics 88, 155123 (2013). http://doi.org/10.1103/PhysRevB.88.155123
Abstract: A (LaVO3)6/(SrVO3)(3) superlattice is studied with a combination of sub-A resolved scanning transmission electron microscopy and monochromated electron energy-loss spectroscopy. The V oxidation state is mapped with atomic spatial resolution enabling us to investigate electronic reconstruction at the LaVO3/SrVO3 interfaces. Surprisingly, asymmetric charge distribution is found at adjacent chemically symmetric interfaces. The local structure is proposed and simulated with a double channeling calculation which agrees qualitatively with our experiment. We demonstrate that local strain asymmetry is the likely cause of the electronic asymmetry of the interfaces. The electronic reconstruction at the interfaces extends much further than the chemical composition, varying from 0.5 to 1.2 nm. This distance corresponds to the length of charge transfer previously found in the (LaVO3)./(SrVO3). metal/insulating and the (LaAlO3)./(SrTiO3). insulating/insulating interfaces.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 15
DOI: 10.1103/PhysRevB.88.155123
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“Perovskite-like Mn2O3 : a path to new manganites”. Ovsyannikov SV, Abakumov AM, Tsirlin AA, Schnelle W, Egoavil R, Verbeeck J, Van Tendeloo G, Glazyrin KV, Hanfland M, Dubrovinsky L, Angewandte Chemie 52, 1494 (2013). http://doi.org/10.1002/anie.201208553
Abstract: Korund-artiges ε-Mn2O3 und Perowskit-artiges ζ-Mn2O3, zwei neue Phasen von Mn2O3, wurden unter hohen Drücken bei hohen Temperaturen synthetisiert. Die Manganatome können vollständig die A- und B-Positionen der Perowskitstruktur besetzen. ζ-Mn2O3 (siehe Bild, A-Positionsordnung) enthält Mn in den drei Oxidationsstufen +II, +III und +IV.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 11.994
Times cited: 84
DOI: 10.1002/anie.201208553
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“Phase problem in the B-site ordering of La2CoMnO6 : impact on structure and magnetism”. Egoavil R, Huehn S, Jungbauer M, Gauquelin N, Béché, A, Van Tendeloo G, Verbeeck, Moshnyaga V, Nanoscale 7, 9835 (2015). http://doi.org/10.1039/c5nr01642h
Abstract: Epitaxial double perovskite La2CoMnO6 (LCMO) films were grown by metalorganic aerosol deposition on SrTiO3(111) substrates. A high Curie temperature, T-C = 226 K, and large magnetization close to saturation, M-S(5 K) = 5.8 mu(B)/f.u., indicate a 97% degree of B-site (Co,Mn) ordering within the film. The Co/Mn ordering was directly imaged at the atomic scale by scanning transmission electron microscopy with energy-dispersive X-ray spectroscopy (STEM-EDX). Local electron-energy-loss spectroscopy (EELS) measurements reveal that the B-sites are predominantly occupied by Co2+ and Mn4+ ions in quantitative agreement with magnetic data. Relatively small values of the (1/2 1/2 1/2) superstructure peak intensity, obtained by X-ray diffraction (XRD), point out the existence of ordered domains with an arbitrary phase relationship across the domain boundary. The size of these domains is estimated to be in the range 35-170 nm according to TEM observations and modelling the magnetization data. These observations provide important information towards the complexity of the cation ordering phenomenon and its implications on magnetism in double perovskites, and similar materials.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.367
Times cited: 37
DOI: 10.1039/c5nr01642h
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“Preventing the reconstruction of the polar discontinuity at oxide heterointerfaces”. Boschker H, Verbeeck J, Egoavil R, Bals S, Van Tendeloo G, Huijben M, Houwman EP, Koster G, Blank DHA, Rijnders G, Advanced functional materials 22, 2235 (2012). http://doi.org/10.1002/adfm.201102763
Abstract: Perovskite oxide heteroepitaxy receives much attention because of the possibility to combine the diverse functionalities of perovskite oxide building blocks. A general boundary condition for the epitaxy is the presence of polar discontinuities at heterointerfaces. These polar discontinuities result in reconstructions, often creating new functionalities at the interface. However, for a significant number of materials these reconstructions are unwanted as they alter the intrinsic materials properties at the interface. Therefore, a strategy to eliminate this reconstruction of the polar discontinuity at the interfaces is required. We show that the use of compositional interface engineering can prevent the reconstruction at the La0.67Sr0.33MnO3/SrTiO3 (LSMO/STO) interface. The polar discontinuity at this interface can be removed by the insertion of a single La0.33Sr0.67O layer, resulting in improved interface magnetization and electrical conductivity.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 72
DOI: 10.1002/adfm.201102763
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“Pulsed laser deposition of SrTiO3 on a H-terminated Si substrate”. Spreitzer M, Egoavil R, Verbeeck J, Blank DHA, Rijnders G, Journal of materials chemistry C : materials for optical and electronic devices 1, 5216 (2013). http://doi.org/10.1039/c3tc30913d
Abstract: Interfacing oxides with silicon is a long-standing problem related to the integration of multifunctional oxides with semiconductor devices and the replacement of SiO2 with high-k gate oxides. In our study, pulsed laser deposition was used to prepare a SrTiO3 (STO) thin film on a H-terminated Si substrate. The main purpose of our work was to verify the ability of H-termination against the oxidation of Si during the PLD process and to analyze the resulting interfaces. In the first part of the study, the STO was deposited directly on the Si, leading to the formation of a preferentially textured STO film with a (100) orientation. In the second part, SrO was used as a buffer layer, which enabled the partial epitaxial growth of STO with STO(110)parallel to Si(100) and STO[001]parallel to Si[001]. The change in the growth direction induced by the application of a SrO buffer was governed by the formation of a SrO(111) intermediate layer and subsequently by the minimization of the lattice misfit between the STO and the SrO. Under the investigated conditions, approximately 10 nm thick interfacial layers formed between the STO and the Si due to reactions between the deposited material and the underlying H-terminated Si. In the case of direct STO deposition, SiOx formed at the interface with the silicon, while in the case when SrO was used as a buffer, strontium silicate grew directly on the silicon, which improves the growth quality of the uppermost STO.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.256
Times cited: 23
DOI: 10.1039/c3tc30913d
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“Site-specific mapping of transition metal oxygen coordination in complex oxides”. Turner S, Egoavil R, Batuk M, Abakumov AA, Hadermann J, Verbeeck J, Van Tendeloo G, Applied physics letters 101, 241910 (2012). http://doi.org/10.1063/1.4770512
Abstract: We demonstrate site-specific mapping of the oxygen coordination number for transition metals in complex oxides using atomically resolved electron energy-loss spectroscopy in an aberration-corrected scanning transmission electron microscope. Pb2Sr2Bi2Fe6O16 contains iron with a constant Fe3+ valency in both octahedral and tetragonal pyramidal coordination and is selected to demonstrate the principle of site-specific coordination mapping. Analysis of the site-specific Fe-L2,3 data reveals distinct variations in the fine structure that are attributed to Fe in a six-fold (octahedron) or five-fold (distorted tetragonal pyramid) oxygen coordination. Using these variations, atomic resolution coordination maps are generated that are in excellent agreement with simulations.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 3.411
Times cited: 12
DOI: 10.1063/1.4770512
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“Co-Rich ZnCoO Nanoparticles Embedded in Wurtzite Zn1-xCoxO Thin Films: Possible Origin of Superconductivity”. Zeng Y-J, Gauquelin N, Li D-Y, Ruan S-C, He H-P, Egoavil R, Ye Z-Z, Verbeeck J, Hadermann J, Van Bael MJ, Van Haesendonck C, ACS applied materials and interfaces 7, 22166 (2015). http://doi.org/10.1021/acsami.5b06363
Abstract: Co-rich ZnCoO nanoparticles embedded in wurtzite Zn0.7Co0.3O thin films are grown by pulsed laser deposition on a Si substrate. Local superconductivity with an onset Tc at 5.9 K is demonstrated in the hybrid system. The unexpected superconductivity probably results from Co(3+) in the Co-rich ZnCoO nanoparticles or from the interface between the Co-rich nanoparticles and the Zn0.7Co0.3O matrix.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.504
Times cited: 13
DOI: 10.1021/acsami.5b06363
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“Domain Selectivity in BiFeO3Thin Films by Modified Substrate Termination”. Solmaz A, Huijben M, Koster G, Egoavil R, Gauquelin N, Van Tendeloo G, Verbeeck J, Noheda B, Rijnders G, Advanced functional materials 26, 2882 (2016). http://doi.org/10.1002/adfm.201505065
Abstract: Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial role in attaining unique ferroelectric and magnetic properties. In this study, controlled ordering of domains in BiFeO3 film is presented, as well as a controlled selectivity between two types of domain walls is presented, i.e., 71° and 109°, by modifying the substrate termination. The experiments on two different substrates, namely SrTiO3 and TbScO3, strongly indicate that the domain selectivity is determined by the growth kinetics of the initial BiFeO3 layers.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 12.124
Times cited: 34
DOI: 10.1002/adfm.201505065
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“Charge-ordering transition in iron oxide Fe4O5 involving competing dimer and trimer formation”. Ovsyannikov SV, Bykov M, Bykova E, Kozlenko DP, Tsirlin AA, Karkin AE, Shchennikov VV, Kichanov SE, Gou H, Abakumov AM, Egoavil R, Verbeeck J, McCammon C, Dyadkin V, Chernyshov D, van Smaalen S, Dubrovinsky LS, Nature chemistry 8, 501 (2016). http://doi.org/10.1038/nchem.2478
Abstract: Phase transitions that occur in materials, driven, for instance, by changes in temperature or pressure, can dramatically change the materials' properties. Discovering new types of transitions and understanding their mechanisms is important not only from a fundamental perspective, but also for practical applications. Here we investigate a recently discovered Fe4O5 that adopts an orthorhombic CaFe3O5-type crystal structure that features linear chains of Fe ions. On cooling below approximately 150 K, Fe4O5 undergoes an unusual charge-ordering transition that involves competing dimeric and trimeric ordering within the chains of Fe ions. This transition is concurrent with a significant increase in electrical resistivity. Magnetic-susceptibility measurements and neutron diffraction establish the formation of a collinear antiferromagnetic order above room temperature and a spin canting at 85 K that gives rise to spontaneous magnetization. We discuss possible mechanisms of this transition and compare it with the trimeronic charge ordering observed in magnetite below the Verwey transition temperature.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 25.87
Times cited: 51
DOI: 10.1038/nchem.2478
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“TEM and AES investigations of the natural surface nano-oxide layer of an AISI 316L stainless steel microfibre”. Ramachandran D, Egoavil R, Crabbe A, Hauffman T, Abakumov A, Verbeeck J, Vandendael I, Terryn H, Schryvers D, Journal of microscopy 264, 207 (2016). http://doi.org/10.1111/jmi.12434
Abstract: The chemical composition, nanostructure and electronic structure of nanosized oxide scales naturally formed on the surface of AISI 316L stainless steel microfibres used for strengthening of composite materials have been characterised using a combination of scanning and transmission electron microscopy with energy-dispersive X-ray, electron energy loss and Auger spectroscopy. The analysis reveals the presence of three sublayers within the total surface oxide scale of 5.0-6.7 nm thick: an outer oxide layer rich in a mixture of FeO.Fe2 O3 , an intermediate layer rich in Cr2 O3 with a mixture of FeO.Fe2 O3 and an inner oxide layer rich in nickel.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.692
Times cited: 12
DOI: 10.1111/jmi.12434
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“Melamine–Formaldehyde Microcapsules: Micro- and Nanostructural Characterization with Electron Microscopy”. Heidari H, Rivero G, Idrissi H, Ramachandran D, Cakir S, Egoavil R, Kurttepeli M, Crabbé, AC, Hauffman T, Terryn H, Du Prez F, Schryvers D, Microscopy and microanalysis 22, 1222 (2016). http://doi.org/10.1017/S1431927616012484
Abstract: A systematic study has been carried out to compare the surface morphology, shell thickness, mechanical properties, and binding behavior of melamine–formaldehyde microcapsules of 5–30 μm diameter size with various amounts of core content by using scanning and transmission electron microscopy including electron tomography, in situ nanomechanical tensile testing, and electron energy-loss spectroscopy. It is found that porosities are present on the outside surface of the capsule shell, but not on the inner surface of the shell. Nanomechanical tensile tests on the capsule shells reveal that Young’s modulus of the shell material is higher than that of bulk melamine–formaldehyde and that the shells exhibit a larger fracture strain compared with the bulk. Core-loss elemental analysis of microcapsules embedded in epoxy indicates that during the curing process, the microcapsule-matrix interface remains uniform and the epoxy matrix penetrates into the surface micro-porosities of the capsule shells.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 1.891
Times cited: 2
DOI: 10.1017/S1431927616012484
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“Bandgap measurement of high refractive index materials by off-axis EELS”. Vatanparast M, Egoavil R, Reenaas TW, Verbeeck J, Holmestad R, Vullum PE, Ultramicroscopy 182, 92 (2017). http://doi.org/10.1016/J.ULTRAMIC.2017.06.019
Abstract: In the present work Cs aberration corrected and monochromated scanning transmission electron microscopy electron energy loss spectroscopy (STEM-EELS) has been used to explore experimental setups that allow bandgaps of high refractive index materials to be determined. Semi-convergence and collection angles in the mu rad range were combined with off-axis or dark field EELS to avoid relativistic losses and guided light modes in the low loss range to contribute to the acquired EEL spectra. Off-axis EELS further supressed the zero loss peak and the tail of the zero loss peak. The bandgap of several GaAs-based materials were successfully determined by simple regression analyses of the background subtracted EEL spectra. The presented set-up does not require that the acceleration voltage is set to below the. Cerenkov limit and can be applied over the entire acceleration voltage range of modern TEMs and for a wide range of specimen thicknesses. (C) 2017 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 3
DOI: 10.1016/J.ULTRAMIC.2017.06.019
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“Growth mechanism of epitaxial SrTiO3 on a (1 x 2) + (2 x 1) reconstructed Sr(1/2 ML)/Si(001) surface”. Spreitzer M, Klement D, Egoavil R, Verbeeck J, Kovac J, Zaloznik A, Koster G, Van Tendeloo G, Suvorov D, Rijnders G, Journal Of Materials Chemistry C 8, 518 (2020). http://doi.org/10.1039/C9TC04092G
Abstract: Sub-monolayer control over the growth at silicon-oxide interfaces is a prerequisite for epitaxial integration of complex oxides with the Si platform, enriching it with a variety of functionalities. However, the control over this integration is hindered by the intense reaction of the constituents. The most suitable buffer material for Si passivation is metallic strontium. When it is overgrown with a layer of SrTiO3 (STO) it can serve as a pseudo-substrate for the integration with functional oxides. In our study we determined a mechanism for epitaxial integration of STO with a (1 x 2) + (2 x 1) reconstructed Sr(1/2 ML)/Si(001) surface using all-pulsed laser deposition (PLD) technology. A detailed analysis of the initial deposition parameters was performed, which enabled us to develop a complete protocol for integration, taking into account the peculiarities of the PLD growth, STO critical thickness, and process thermal budget, in order to kinetically trap the reaction between STO and Si and thus to minimize the thickness of the interface layer. The as-prepared oxide layer exhibits STO(001)8Si(001) out-of-plane and STO[110]8Si[100] in-plane orientation and together with recent advances in large-scale PLD tools these results represent a new technological solution for the implementation of oxide electronics on demand.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.4
Times cited: 12
DOI: 10.1039/C9TC04092G
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