Number of records found: 224
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Citations
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Atomic and microstructure of CMR materials”. Van Tendeloo G, Lebedev OI, Amelinckx S, Journal of magnetism and magnetic materials 211, 73 (2000). http://doi.org/10.1016/S0304-8853(99)00716-7
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Antiferroelectric phase transition in Sr9In(PO4)7”. Stefanovich SY, Belik AA, Azuma M, Takano M, Baryshnikova OV, Morozov VA, Lazoryak BI, Lebedev OI, Van Tendeloo G, Physical review : B : condensed matter and materials physics 70, 172103 (2004). http://doi.org/10.1103/PhysRevB.70.172103
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Anion ordering and defect structure in Ruddlesden-Popper strontium niobium oxynitrides”. Tobías G, Beltrán-Porter D, Lebedev OI, Van Tendeloo G, Rodríguez-Carvajal J, Fuertes A, Inorganic chemistry 43, 8010 (2004). http://doi.org/10.1021/ic049236k
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An effective morphology control of hydroxyapatite crystals via hydrothermal synthesis”. Neira IS, Kolen'ko YV, Lebedev OI, Van Tendeloo G, Gupta HS, Guitián F, Yoshimura M, Crystal growth &, design 9, 466 (2009). http://doi.org/10.1021/cg800738a
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Aluminum incorporation into MCM-48 toward the creation of Brønsted acidity”. Collart O, Cool P, van der Voort P, Meynen V, Vansant EF, Houthoofd KJ, Grobet PJ, Lebedev OI, Van Tendeloo G, The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical 108, 13905 (2004). http://doi.org/10.1021/jp049837x
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Accurate measurements of atomic displacements in La0.9Sr0.1MnO3 thin films grown on a SrTiO3 substrate”. Geuens P, Lebedev OI, van Dyck D, Van Tendeloo G s.l., page 1133 (2000).
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A-site ordering versus electronic inhomogeneity in colossally magnetoresistive manganite films”. Moshnyaga V, Sudheendra L, Lebedev OI, Koster SA, Gehrke K, Shapoval O, Belenchuk A, Damaschke B, Van Tendeloo G, Samwer K, Physical review letters 97, 107205 (2006). http://doi.org/10.1103/PhysRevLett.97.107205
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A-site ordering and stripe phases in manganite films”. Sudheendra L, Moshnyaga V, Lebedev OI, Gehrke K, Belenciuc A, Shapoval O, Van Tendeloo G, Samwer K, Physica: B : condensed matter T2 –, International Conference on Strongly Correlated Electron Systems (SCES, 2007), MAY 13-18, 2007, Houston, TX 403, 1645 (2008). http://doi.org/10.1016/j.physb.2007.10.332
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A study of the domain structure of epitaxial (La-Ca)MnO3 films by high-resolution transmission electron microscopy”. Lebedev OI, Van Tendeloo G, Abakumov AM, Amelinckx S, Leibold B, Habermeier H-U, Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 79, 1461 (1999). http://doi.org/10.1080/01418619908210372
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A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction”. Verbist K, Lebedev OI, Van Tendeloo G, Tafuri F, Granozio FM, Di Chiara A, Bender H, Applied physics letters 74, 1024 (1999). http://doi.org/10.1063/1.123443
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A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon”. de Gryse O, Vanhellemont J, Clauws P, Lebedev O, van Landuyt J, Simoen E, Claeys C, Physica: B : condensed matter T2 –, 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK 340, 1013 (2003). http://doi.org/10.1016/j.physb.2003.09.194
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A new structure type of the ternary sulfide Eu1.3Nb1.9S5”. Khasanova NR, Van Tendeloo G, Lebedev OI, Amelinckx S, Grippa AY, Abakumov AM, Istomin SY, D'yachenko OG, Antipov EV, Journal of solid state chemistry 164, 345 (2002). http://doi.org/10.1006/jssc.2001.9501
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A new iron oxophosphate SrFe3(PO4)3O with chain-like structure”. Morozov VA, Pokholok KV, Lazoryak BI, Malakho AP, Lachgar A, Lebedev OI, Van Tendeloo G, Journal of solid state chemistry 170, 411 (2003). http://doi.org/10.1016/S0022-4596(02)00133-0
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A counterion-catalyzed (S0H+)(X-I+) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions”. Cassiers K, van der Voort P, Linssen T, Vansant EF, Lebedev O, van Landuyt J, The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical 107, 3690 (2003). http://doi.org/10.1021/jp026696v
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