Abstract: We have investigated epitaxially grown single-crystalline Ca-doped LaMnO3 thin films using the pulsed laser deposition technique in a case study aimed to explore the possibilities buried in epitaxial stress tailoring in order to control the transport properties of CMR materials beyond the limits set by equilibrium thermodynamics. Depending on the film thickness there is an abrupt transition from pseudomorphic to epitaxial granular growth observable which is related to the epitaxial strain of the films. This is associated with microscopic stress relaxation and leads to well controllable modifications of the atomic arrangements of the Mn-O sublattice in the films. Due to the interrelation of double exchange, spin-, charge- and orbital ordering and the Jahn-Teller effect mediated coupling of the electronic system to the crystal lattice, the magnetotransport properties of the firms can be modified in a controllable way.

Abstract: During the SPASIBA expedition (Scientific Program on Arctic and Siberian Aquatorium) on board RV “Yakov Smirnitzky” to the Laptev Sea 10 samples of aerosols in the marine boundary layer have been collected by nylon meshes in August-September 1991. The composition of the samples was studied by a combined approach of different analytical techniques (single-particle analysis, instrumental neutron activation analysis, and atomic absorption spectrometry). The mass concentration of coarse (>1 mu m) insoluble fraction of aerosols was from 0.08 to 0.46 mu g/m(3). In all samples remains of land vegetation were found as the main component. The organic carbon content of the aerosols ranged from 23 to 49%. The inorganic part of the samples is represented mainly by alumosilicates and quartz, In all samples anthropogenic fly ash particles were detected, Temporal variations of the element concentrations are caused by various air masses transported to the study area.

Abstract: In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.