“Interband optical properties of concentric type-I nanorings in a normal magnetic field”. Arsoski V, Tadić, M, Peeters FM, Acta physica Polonica: A: general physics, solid state physics, applied physics 117, 733 (2010)
Abstract: Two concentric two-dimensional GaAs/(Al,Ga)As nanorings in a normal magnetic field are theoretically studied. The single-band effective mass approximation is adopted for both the electron and the hole states, and the analytical solutions are given. We find that the electronic single particle states are arranged in pairs, which exhibit anticrossings and the orbital momentum transitions in the energy spectrum when magnetic field increases. Their period is essentially determined by the radius of the outer ring. The oscillator strength for interband transitions is strongly reduced close to each anticrossing. We show that an optical excitonic Aharonov-Bohm effect may occur in concentric nanorings.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 0.469
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“Intercalation of argon in honeycomb structures towards promising strategy for rechargeable Li-ion batteries”. Duden EI, Savaci U, Turan S, Sevik C, Demiroglu I, Journal of physics : condensed matter 35, 085301 (2023). http://doi.org/10.1088/1361-648X/ACA8E7
Abstract: High-performance rechargeable batteries are becoming very important for high-end technologies with their ever increasing application areas. Hence, improving the performance of such batteries has become the main bottleneck to transferring high-end technologies to end users. In this study, we propose an argon intercalation strategy to enhance battery performance via engineering the interlayer spacing of honeycomb structures such as graphite, a common electrode material in lithium-ion batteries (LIBs). Herein, we systematically investigated the LIB performance of graphite and hexagonal boron nitride (h-BN) when argon atoms were sent into between their layers by using first-principles density-functional-theory calculations. Our results showed enhanced lithium binding for graphite and h-BN structures when argon atoms were intercalated. The increased interlayer space doubles the gravimetric lithium capacity for graphite, while the volumetric capacity also increased by around 20% even though the volume was also increased. The ab initio molecular dynamics simulations indicate the thermal stability of such graphite structures against any structural transformation and Li release. The nudged-elastic-band calculations showed that the migration energy barriers were drastically lowered, which promises fast charging capability for batteries containing graphite electrodes. Although a similar level of battery promise was not achieved for h-BN material, its enhanced battery capabilities by argon intercalation also support that the argon intercalation strategy can be a viable route to enhance such honeycomb battery electrodes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.7
DOI: 10.1088/1361-648X/ACA8E7
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“Interface effects on magnetopolarons in GaAs/AlxGa1-xAs quantum wells at high magnetic fields”. Hai GQ, Peeters FM, Studart N, Wang YJ, McCombe BD, Physical review : B : condensed matter and materials physics 58, 7822 (1998). http://doi.org/10.1103/PhysRevB.58.7822
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 8
DOI: 10.1103/PhysRevB.58.7822
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“Interface optical phonon mode coupling in GaAs/AlAs quantum wells at high magnetic fields”. Hai GQ, Peeters FM, Devreese JT, Physica: B : condensed matter 184, 289 (1993). http://doi.org/10.1016/0921-4526(93)90367-F
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 1.319
Times cited: 3
DOI: 10.1016/0921-4526(93)90367-F
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“Interface thermal conductivities induced by van der Waals interactions”. Dong HM, Liang HP, Tao ZH, Duan YF, Milošević, MV, Chang K, Physical chemistry, chemical physics 26, 4047 (2024). http://doi.org/10.1039/D3CP05377F
Abstract: The interface heat transfer of two layers induced by van der Waals (vdW) contacts is theoretically investigated, based on first-principles calculations at low temperatures. The results suggest that out-of-plane acoustic phonons with low frequencies dominate the interface thermal transport due to the vdW interaction. The interface thermal conductivity is proportional to the cubic of temperature at very low temperatures, but becomes linearly proportional to temperature as temperature increases. We show that manipulating the strain alters vdW coupling, leading to increased interfacial thermal conductivity at the interface. Our findings provide valuable insights into the interface heat transport in vdW heterostructures and support further design and optimization of electronic and optoelectronic nanodevices based on vdW contacts. The heat transfer induced by van der Waals contacts is dominated by ZA phonons. The interface thermal conductivity is proportional to the cubic of temperature, but becomes linearly proportional to temperature as temperature increases.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.3
DOI: 10.1039/D3CP05377F
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“Interface-dependent phononic and optical properties of GeO/MoSO heterostructures”. Yagmurcukardes M, Sozen Y, Baskurt M, Peeters FM, Sahin H, Nanoscale (2021). http://doi.org/10.1039/D1NR06534C
Abstract: The interface-dependent electronic, vibrational, piezoelectric, and optical properties of van der Waals heterobilayers, formed by buckled GeO (b-GeO) and Janus MoSO structures, are investigated by means of first-principles calculations. The electronic band dispersions show that O/Ge and S/O interface formations result in a type-II band alignment with direct and indirect band gaps, respectively. In contrast, O/O and S/Ge interfaces give rise to the formation of a type-I band alignment with an indirect band gap. By considering the Bethe-Salpeter equation (BSE) on top of G(0)W(0) approximation, it is shown that different interfaces can be distinguished from each other by means of the optical absorption spectra as a consequence of the band alignments. Additionally, the low- and high-frequency regimes of the Raman spectra are also different for each interface type. The alignment of the individual dipoles, which is interface-dependent, either weakens or strengthens the net dipole of the heterobilayers and results in tunable piezoelectric coefficients. The results indicate that the possible heterobilayers of b-GeO/MoSO asymmetric structures possess various electronic, optical, and piezoelectric properties arising from the different interface formations and can be distinguished by means of various spectroscopic techniques.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 7.367
Times cited: 5
DOI: 10.1039/D1NR06534C
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“Interfacial characteristics, Schottky contact, and optical performance of a graphene/Ga2SSe van der Waals heterostructure: Strain engineering and electric field tunability”. Nguyen HTT, Obeid MM, Bafekry A, Idrees M, Vu TV, Phuc H V, Hieu NN, Le Hoa T, Amin B, Nguyen C V, Physical Review B 102, 075414 (2020). http://doi.org/10.1103/PHYSREVB.102.075414
Abstract: Two-dimensional graphene-based van der Waals heterostructures have received considerable interest because of their intriguing characteristics compared with the constituent single-layer two-dimensional materials. Here, we investigate the interfacial characteristics, Schottky contact, and optical performance of graphene/Ga2SSe van der Waals (vdW) heterostructure using first-principles calculations. The effects of stacking patterns, electric gating, and interlayer coupling on the interfacial properties of graphene/Ga2SSe heterostructures are also examined. Our results demonstrate that the Dirac cone of graphene is well preserved at the F point in all stacking patterns due to the weak vdW interactions, which keep the heterostructures feasible such that they can be obtained in further experiments. Moreover, depending on the stacking patterns, a small band gap of about 13-17 meV opens in graphene and has a high carrier mobility, indicating that the graphene/Ga2SSe heterostructures are potential candidates for future high-speed nanoelectronic applications. In the ground state, the graphene/Ga2SSe heterostructures form an n-type Schottky contact. The transformation from an n-type to a p-type Schottky contact or to an Ohmic contact can be forced by electric gating or by varying the interlayer coupling. Our findings could provide physical guidance for designing controllable Schottky nanodevices with high electronic and optical performances.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.7
Times cited: 12
DOI: 10.1103/PHYSREVB.102.075414
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“Interlayer excitons in transition metal dichalcogenide heterostructures”. Van der Donck M, Peeters FM, Physical review B 98, 115104 (2018). http://doi.org/10.1103/PHYSREVB.98.115104
Abstract: Starting from the single-particle Dirac Hamiltonian for charge carriers in monolayer transition metal dichalcogenides (TMDs), we construct a four-band Hamiltonian describing interlayer excitons consisting of an electron in one TMD layer and a hole in the other TMD layer. An expression for the electron-hole interaction potential is derived, taking into account the effect of the dielectric environment above, below, and between the two TMD layers as well as polarization effects in the transition metal layer and in the chalcogen layers of the TMD layers. We calculate the interlayer exciton binding energy and average in-plane interparticle distance for different TMD heterostructures. The effect of different dielectric environments on the exciton binding energy is investigated and a remarkable dependence on the dielectric constant of the barrier between the two layers is found, resulting from competing effects as a function of the in-plane and out-of-plane dielectric constants of the barrier. The polarization effects in the chalcogen layers, which in general reduce the exciton binding energy, can lead to an increase in binding energy in the presence of strong substrate effects by screening the substrate. The excitonic absorbance spectrum is calculated and we show that the interlayer exciton peak depends linearly on a perpendicular electric field, which agrees with recent experimental results.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 41
DOI: 10.1103/PHYSREVB.98.115104
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“Interlink between Abnormal Water Imbibition in Hydrophilic and Rapid Flow in Hydrophobic Nanochannels”. Zhou R, Neek-Amal M, Peeters FM, Bai B, Sun C, Physical Review Letters 132, 184001 (2024). http://doi.org/10.1103/PhysRevLett.132.184001
Abstract: Nanoscale extension and refinement of the Lucas-Washburn model is presented with a detailed analysis of recent experimental data and extensive molecular dynamics simulations to investigate rapid water flow and water imbibition within nanocapillaries. Through a comparative analysis of capillary rise in hydrophilic nanochannels, an unexpected reversal of the anticipated trend, with an abnormal peak, of imbibition length below the size of 3 nm was discovered in hydrophilic nanochannels, surprisingly sharing the same physical origin as the well-known peak observed in flow rate within hydrophobic nanochannels. The extended imbibition model is applicable across diverse spatiotemporal scales and validated against simulation results and existing experimental data for both hydrophilic and hydrophobic
Keywords: A1 Journal Article; CMT
Impact Factor: 8.6
Times cited: 1
DOI: 10.1103/PhysRevLett.132.184001
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“Interminiband spectroscopy of biased superlattices”. Helm M, Hilber W, Strasser G, de Meester R, Peeters FM, Wacker A, Physica. E: Low-dimensional systems and nanostructures 7, 274 (2000). http://doi.org/10.1016/S1386-9477(99)00275-1
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 1
DOI: 10.1016/S1386-9477(99)00275-1
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“International Conference on “Strongly Coupled Coulomb Systems&rdquo, (July 24-29, 2022, Görlitz, Germany)”. Cangi A, Moldabekov ZA, Neilson D, Contributions to plasma physics 63, e202300110 (2023). http://doi.org/10.1002/CTPP.202300110
Keywords: Editorial; Condensed Matter Theory (CMT)
Impact Factor: 1.6
DOI: 10.1002/CTPP.202300110
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“Interplay between lattice dynamics and superconductivity in Nb3Sn thin films”. Couet S, Peelaers H, Trekels M, Houben K, Petermann C, Hu MY, Zhao JY, Bi W, Alp EE, Menéndez E, Partoens B, Peeters FM, Van Bael MJ, Vantomme A, Temst K;, Physical review : B : condensed matter and materials physics 88, 045437 (2013). http://doi.org/10.1103/PhysRevB.88.045437
Abstract: We investigate the link between superconductivity and atomic vibrations in Nb3Sn films with a thickness ranging from 10 to 50 nm. The challenge of measuring the phonon density of states (PDOS) of these films has been tackled by employing the technique of nuclear inelastic scattering by Sn-119 isotopes to reveal the Sn-partial phonon density of states. With the support of ab initio calculations, we evaluate the effect of reduced film thickness on the PDOS. This approach allows us to estimate the changes in superconducting critical temperature T-c induced by phonon confinement, which turned out to be limited to a few tenths of K. The presented method is successful for the Nb3Sn system and paves the way for more systematic studies of the role of phonon confinement in Sn-containing superconductors.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 5
DOI: 10.1103/PhysRevB.88.045437
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“Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport”. Yang W, Chang K, Wu XG, Zheng HZ, Peeters FM;, Applied physics letters 89 (2006). http://doi.org/10.1063/1.2357888
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 10
DOI: 10.1063/1.2357888
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“Interplay between snake and quantum edge states in a graphene Hall bar with a pn-junction”. Milovanović, SP, Masir MR, Peeters FM, Applied physics letters 105, 123507 (2014). http://doi.org/10.1063/1.4896769
Abstract: The magneto- and Hall resistance of a locally gated cross shaped graphene Hall bar is calculated. The edge of the top gate is placed diagonally across the center of the Hall cross. Four-probe resistance is calculated using the Landauer-Büttiker formalism, while the transmission coefficients are obtained using the non-equilibrium Green's function approach. The interplay between transport due to edge channels and snake states is investigated. When two edge channels are occupied, we predict oscillations in the Hall and the bend resistance as function of the magnetic field, which are a consequence of quantum interference between the occupied snake states.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 18
DOI: 10.1063/1.4896769
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“Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs”. de Keyser A, Bogaerts R, Karavolas VC, van Bockstal L, Herlach F, Peeters FM, van de Graaf W, Borghs G, Solid state electronics 40, 395 (1996). http://doi.org/10.1016/0038-1101(96)84617-X
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.504
Times cited: 2
DOI: 10.1016/0038-1101(96)84617-X
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“Interplay of model ingredients affecting aggregate shape plasticity in diffusion-limited aggregation”. Duarte-Neto P, Stosic T, Stosic B, Lessa R, Milošević, MV, Physical review : E : statistical, nonlinear, and soft matter physics 90, 012312 (2014). http://doi.org/10.1103/PhysRevE.90.012312
Abstract: We analyze the combined effect of three ingredients of an aggregation model-surface tension, particle flow and particle source-representing typical characteristics of many aggregation growth processes in nature. Through extensive numerical experiments and for different underlying lattice structures we demonstrate that the location of incoming particles and their preferential direction of flow can significantly affect the resulting general shape of the aggregate, while the surface tension controls the surface roughness. Combining all three ingredients increases the aggregate shape plasticity, yielding a wider spectrum of shapes as compared to earlier works that analyzed these ingredients separately. Our results indicate that the considered combination of effects is fundamental for modeling the polymorphic growth of a wide variety of structures in confined geometries and/or in the presence of external fields, such as rocks, crystals, corals, and biominerals.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.366
Times cited: 3
DOI: 10.1103/PhysRevE.90.012312
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“Intersubband plasmons in quasi-one-dimensional electron systems on a liquid helium surface”. Tavares MRS, Hai G-Q, Peeters FM, Studart N, Physical review : B : condensed matter and materials physics 68, 140504 (2003). http://doi.org/10.1103/PhysRevB.68.140504
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 3
DOI: 10.1103/PhysRevB.68.140504
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“Intersubband transitions in InAs/GaSb superlattices in a parallel magnetic field”. de Meester RHJ, Peeters FM, Lakrimi M, Nicholas RJ, Poulter AJL, Mason NJ, Walker PJ, Physica. E: Low-dimensional systems and nanostructures 7, 93 (2000)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.221
Times cited: 1
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“Intersubband-coupling and screening effects on the electron transport in a quasi-two-dimensional δ-doped semiconductor system”. Hai G-Q, Studart N, Peeters FM, Koenraad PM, Wolter JH, Journal of applied physics 80, 5809 (1996). http://doi.org/10.1063/1.363573
Abstract: The effects due to intersubband coupling and screening on the ionized impurity scattering are studied for a quasi-two-dimensional electron system in delta-doped semiconductors. We found that intersubband coupling plays an essential role in describing the screening properties and the effect of ionized impurity scattering on the mobility in a multisubband system. At the onset of the occupation of a higher subband, the screening due to the intersubband coupling leads to a reduction of the small angle scattering rate in the lower subband. We showed that such an effect is significant in a delta-doped quantum well and results in a pronounced increase of the quantum mobility at the onset of the occupation of a higher subband. (C) 1996 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.183
Times cited: 40
DOI: 10.1063/1.363573
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“Intersublevel absorption in stacked n-type doped self-assembled quantum dots”. Veljkovic D, Tadić, M, Peeters FM, Materials science forum 494, 37 (2005)
Abstract: The intersublevel absorption in n-doped InAs/GaAs self-assembled quantum-dot molecules composed of three quantum dots is theoretically considered. The transition matrix elements and the transition energies are found to vary considerably with the spacer thickness. For s polarized light, decreasing the thickness of the spacer between the dots brings about crossings between the transition matrix elements, but the overall absorption is not affected by the variation of the spacer thickness. For p-polarized light and thick spacers, there are no available transitions in the single quantum dot, but a few of them emerge as a result of the electron state splitting in the stacks of coupled quantum dots, which leads to a considerable increase of the transition matrix elements, exceeding by an order of magnitude values of the matrix elements for s-polarized light.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
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“Intersublevel magnetoabsorption in the valence band of p-type InAs/GaAs and Ge/Si self-assembled quantum dots”. Tadić, M, Peeters FM, Physical review : B : condensed matter and materials physics 71, 125342 (2005). http://doi.org/10.1103/PhysRevB.71.125342
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 7
DOI: 10.1103/PhysRevB.71.125342
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“Intra-zero-energy Landau level crossings in bilayer graphene at high electric fields”. Xiang F, Gupta A, Chaves A, Krix ZE, Watanabe K, Taniguchi T, Fuhrer MS, Peeters FM, Neilson D, Milošević, MV, Hamilton AR, Nano letters 23, 9683 (2023). http://doi.org/10.1021/ACS.NANOLETT.3C01456
Abstract: The highly tunable band structure of the zero-energy Landau level (zLL) of bilayer graphene makes it an ideal platform for engineering novel quantum states. However, the zero-energy Landau level at high electric fields has remained largely unexplored. Here we present magnetotransport measurements of bilayer graphene in high transverse electric fields. We observe previously undetected Landau level crossings at filling factors nu = -2, 1, and 3 at high electric fields. These crossings provide constraints for theoretical models of the zero-energy Landau level and show that the orbital, valley, and spin character of the quantum Hall states at high electric fields is very different from low electric fields. At high E, new transitions between states at nu = -2 with different orbital and spin polarization can be controlled by the gate bias, while the transitions between nu = 0 -> 1 and nu = 2 -> 3 show anomalous behavior.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 10.8
Times cited: 1
DOI: 10.1021/ACS.NANOLETT.3C01456
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“Intrinsic control of interlayer exciton generation in Van der Waals materials via Janus layers”. Torun E, Paleari F, Milošević, MV, Wirtz L, Sevik C, Nano letters 23, 3159 (2023). http://doi.org/10.1021/ACS.NANOLETT.2C04724
Abstract: We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. We investigate different MoS2@Janus layer combinations using first-principles methods including excitons and exciton-phonon coupling. The direction of the intrinsic electric field from the Janus layer modifies the electronic band alignments and, consequently, the energy separation between dark interlayer exciton states and bright in-plane excitons. We find that in-plane lattice vibrations strongly couple the two states, so that exciton-phonon scattering may be a viable generation mechanism for interlayer excitons upon light absorption. In particular, in the case of MoS2@WSSe, the energy separation of the low-lying interlayer exciton from the in-plane exciton is resonant with the transverse optical phonon modes (40 meV). We thus identify this heterobilayer as a prime candidate for efficient generation of charge-separated electron-hole pairs.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 10.8
DOI: 10.1021/ACS.NANOLETT.2C04724
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“Intrinsic magnetism in penta-hexa-graphene: A first-principles study”. Aierken Y, Leenaerts O, Peeters FM, Physical review B 94, 155410 (2016). http://doi.org/10.1103/PHYSREVB.94.155410
Abstract: Recently, several monolayer carbon allotropes have been proposed. The magnetic properties of these metal-free materials are investigated, and we explore a special type of all carbon system having an intrinsic magnetic ground state. The structure is composed of mixing pentagonal and hexagonal rings of carbon atoms, such that the unit cell consists of eleven atoms, where two C atoms each have an unpaired electron each with a local magnetic moment. The antiferromagnetic (AFM) state has a lower energy than the ferromagnetic (FM) one. However, a strain-driven transition to the FM ground state is possible. The application of strain not only lowers the energy of the FM state but it also induces an energy barrier of about 13 meV/(magnetic atom) to protect the FM state from excitation. Our findings based on first-principles calculations will motivate other works on similar metal-free magnetic monolayer materials and will have an impact on their possible applications in spintronic devices.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 13
DOI: 10.1103/PHYSREVB.94.155410
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“Intrinsic optical anisotropy of [001]-grown short-period InAs/GaSb superlattices”. Li LL, Xu W, Peeters FM, Physical review : B : condensed matter and materials physics 82, 235422 (2010). http://doi.org/10.1103/PhysRevB.82.235422
Abstract: We theoretically investigate the intrinsic optical anisotropy or polarization induced by the microscopic interface asymmetry (MIA) in no-common-atom (NCA) InAs/GaSb superlattices (SLs) grown along the [001] direction. The eight-band K⋅P model is used to calculate the electronic band structures and incorporates the MIA effect. A Boltzmann equation approach is employed to calculate the optical properties. We found that in NCA InAs/GaSb SLs, the MIA effect causes a large in-plane optical anisotropy for linearly polarized light and the largest anisotropy occurs for light polarized along the [110] and [11̅ 0] directions. The relative difference between the optical-absorption coefficient for [110]-polarized light and that for [11̅ 0]-polarized light is found to be larger than 50%. The dependence of the in-plane optical anisotropy on temperature, photoexcited carrier density, and layer width is examined in detail. This study is important for optical devices which require the polarization control and selectivity.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 18
DOI: 10.1103/PhysRevB.82.235422
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“Introducing novel electronic and magnetic properties in C3N nanosheets by defect engineering and atom substitution”. Bafekry A, Shayesteh SF, Peeters FM, Physical chemistry, chemical physics 21, 21070 (2019). http://doi.org/10.1039/C9CP03853A
Abstract: Using first-principles calculations the effect of topological defects, vacancies, Stone-Wales and anti-site and substitution of atoms, on the structure and electronic properties of monolayer C3N are investigated. Vacancy defects introduce localized states near the Fermi level and a local magnetic moment. While pristine C3N is an indirect semiconductor with a 0.4 eV band gap, with substitution of O, S and Si atoms for C, it remains a semiconductor with a band gap in the range 0.25-0.75 eV, while it turns into a metal with H, Cl, B, P, Li, Na, K, Be and Mg substitution. With F substitution, it becomes a dilute-magnetic semiconductor, while with Ca substitution it is a ferromagnetic-metal. When replacing the N host atom, C3N turns into: a metal (H, O, S, C, Si, P, Li and Be), ferromagnetic-metal (Mg), half-metal (Ca) and spin-glass semiconductor (Na and K). Moreover, the effects of charging and strain on the electronic properties of Na atom substitution in C3N are investigated. We found that the magnetic moment decreases or increases depending on the type and size of strain (tensile or compression). Our study shows how the band gap and magnetism in monolayer C3N can be tuned by introducing defects and atom substitution. The so engineered C3N can be a good candidate for future low dimensional devices.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 59
DOI: 10.1039/C9CP03853A
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“Inverse flux quantum periodicity of magnetoresistance oscillations in two-dimensional short-period surface superlattices”. Wang XF, Vasilopoulos P, Peeters FM, Physical review : B : condensed matter and materials physics 69, 035331 (2004). http://doi.org/10.1103/PhysRevB.69.035331
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 10
DOI: 10.1103/PhysRevB.69.035331
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“Investigation of properties limiting efficiency in Cu2ZnSnSe4-based solar cells”. Brammertz G, Oueslati S, Buffiere M, Bekaert J, El Anzeery H, Messaoud KB, Sahayaraj S, Nuytten T, Koble C, Meuris M, Poortmans J;, IEEE journal of photovoltaics 5, 649 (2015). http://doi.org/10.1109/JPHOTOV.2014.2376053
Abstract: We have investigated different nonidealities in Cu2ZnSnSe4CdSZnO solar cells with 9.7% conversion efficiency, in order to determine what is limiting the efficiency of these devices. Several nonidealities could be observed. A barrier of about 300 meV is present for electron flow at the absorberbuffer heterojunction leading to a strong crossover behavior between dark and illuminated currentvoltage curves. In addition, a barrier of about 130 meV is present at the Moabsorber contact, which could be reduced to 15 meV by inclusion of a TiN interlayer. Admittance spectroscopy results on the devices with the TiN backside contact show a defect level with an activation energy of 170 meV. Using all parameters extracted by the different characterization methods for simulations of the two-diode model including injection and recombination currents, we come to the conclusion that our devices are limited by the large recombination current in the depletion region. Potential fluctuations are present in the devices as well, but they do not seem to have a special degrading effect on the devices, besides a probable reduction in minority carrier lifetime through enhanced recombination through the band tail defects.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 3.712
Times cited: 13
DOI: 10.1109/JPHOTOV.2014.2376053
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“Investigation of strain and doping on the electronic properties of single layers of C₆N₆, and C₆N₈: a first principles study”. Bafekry A, Nguyen C V, Goudarzi A, Ghergherehchi M, Shafieirad M, Rsc Advances 10, 27743 (2020). http://doi.org/10.1039/D0RA04463F
Abstract: In this work, by performing first-principles calculations, we explore the effects of various atom impurities on the electronic and magnetic properties of single layers of C(6)N(6)and C6N8. Our results indicate that atom doping may significantly modify the electronic properties. Surprisingly, doping Cr into a holey site of C(6)N(6)monolayer was found to exhibit a narrow band gap of 125 meV upon compression strain, considering the spin-orbit coupling effect. Also, a C atom doped in C(6)N(8)monolayer shows semi-metal nature under compression strains larger than -2%. Our results propose that Mg or Ca doped into strained C(6)N(6)may exhibit small band gaps in the range of 10-30 meV. In addition, a magnetic-to-nonmagnetic phase transition can occur under large tensile strains in the Ca doped C(6)N(8)monolayer. Our results highlight the electronic properties and magnetism of C(6)N(6)and C(6)N(8)monolayers. Our results show that the electronic properties can be effectively modified by atom doping and mechanical strain, thereby offering new possibilities to tailor the electronic and magnetic properties of C(6)N(6)and C(6)N(8)carbon nitride monolayers.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.9
Times cited: 11
DOI: 10.1039/D0RA04463F
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Bafekry A (2020) Investigation of the effects of defects and impurities on nanostructures consisting of Group IV and V elements using First-principles calculations. 126 p
Keywords: Doctoral thesis; Condensed Matter Theory (CMT)
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