“Base cation fluxes in mountain landscapes of Lake Baikal southern shore”. Semenov MY, Van Grieken R, Communications in soil science and plant analysis 38, 2635 (2007). http://doi.org/10.1080/00103620701662851
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1080/00103620701662851
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“Basalt addition improves the performance of young grassland monocultures under more persistent weather featuring longer dry and wet spells”. Reynaert S, Vienne A, de Boeck HJ, D'Hose T, Janssens I, Nijs I, Portillo-Estrada M, Verbruggen E, Vicca S, Agricultural and forest meteorology 340, 109610 (2023). http://doi.org/10.1016/J.AGRFORMET.2023.109610
Abstract: Global warming is altering the intra-annual variability of precipitation patterns in the mid-latitudes, including a shift towards longer dry and wet spells compared to historic averages. Such fluctuations will likely alter soil water and nutrient dynamics of managed ecosystems which could negatively influence their functioning (e.g., productivity and fodder quality). Here, we investigated whether basalt addition could attenuate effects of increasingly persistent precipitation regimes (PR) on two agricultural grassland monocultures differing in drought resistance (low: Lolium perenne (LP) vs high: Festulolium (FL)) and digestibility (high: LP, low: FL), while improving soil C sequestration. In total, 32 experimental mesocosms were subjected to either a low (1-day wet/ dry alternation) or a highly (30-day wet/dry alternation) persistent PR over 120 days, keeping total precipitation equal. In half of these mesocosms, we mixed basalt with the top 20 cm soil layer at a rate of 50 t ha-1. Overall, 30-day PR increased average water availability resulting in improved aboveground biomass and shoot digestibility for both species, in spite of elevated physiological stress. These PR also increased shoot Si, K, N and C but reduced Ca accumulation. Basalt addition generally increased soil Al, Ni, Mg, Ca, P, K and Si availability without altering root biomass or total soil carbon. Moreover, differences in root N content and C:N ratio between species were reduced. Interestingly, basalt modified the PR effects on productivity. Within 30-day PR, basalt stimulated aboveground biomass (& PLUSMN;14%) and root Si and K contents without altering plant digestibility, palatability, crude protein content or Ni/Al content. These results indicate that basalt can stimulate grassland productivity and soil nutrient availability under more persistent PR without negatively affecting fodder quality. Hence, basalt application may improve the performance of young temperate grassland monocultures under climate change, though dry soil conditions may limit effects on soil C sequestration during summer.
Keywords: A1 Journal article; Plant and Ecosystems (PLECO) – Ecology in a time of change
Impact Factor: 6.2
DOI: 10.1016/J.AGRFORMET.2023.109610
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“Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility”. Lujan GS, Magnus W, Sorée B, Ragnarsson LA, Trojman L, Kubicek S, De Gendt S, Heyns A, De Meyer K, Microelectronic engineering 80, 82 (2005). http://doi.org/10.1016/j.mee.2005.04.047
Abstract: The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 1
DOI: 10.1016/j.mee.2005.04.047
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“Barrier efficiency of sponge-like La2Zr2O7 buffer layers for YBCO-coated conductors”. Molina L, Tan H, Biermans E, Batenburg KJ, Verbeeck J, Bals S, Van Tendeloo G, Superconductor science and technology 24, 065019 (2011). http://doi.org/10.1088/0953-2048/24/6/065019
Abstract: Solution derived La2Zr2O7 films have drawn much attention for potential applications as thermal barriers or low-cost buffer layers for coated conductor technology. Annealing and coating parameters strongly affect the microstructure of La2Zr2O7, but different film processing methods can yield similar microstructural features such as nanovoids and nanometer-sized La2Zr2O7 grains. Nanoporosity is a typical feature found in such films and the implications for the functionality of the films are investigated by a combination of scanning transmission electron microscopy (STEM), electron energy-loss spectroscopy (EELS) and quantitative electron tomography. Chemical solution based La2Zr2O7 films deposited on flexible Ni5 at.%W substrates with a {100}lang001rang biaxial texture were prepared for an in-depth characterization. A sponge-like structure composed of nanometer-sized voids is revealed by high-angle annular dark-field scanning transmission electron microscopy in combination with electron tomography. A three-dimensional quantification of nanovoids in the La2Zr2O7 film is obtained on a local scale. Mostly non-interconnected highly faceted nanovoids compromise more than one-fifth of the investigated sample volume. The diffusion barrier efficiency of a 170 nm thick La2Zr2O7 film is investigated by STEM-EELS, yielding a 1.8 ± 0.2 nm oxide layer beyond which no significant nickel diffusion can be detected and intermixing is observed. This is of particular significance for the functionality of YBa2Cu3O7 − δ coated conductor architectures based on solution derived La2Zr2O7 films as diffusion barriers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
Impact Factor: 2.878
Times cited: 31
DOI: 10.1088/0953-2048/24/6/065019
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“Barium-based manganites Ln1-xBaxMnO3 with Ln = {Pr, La}: phase transitions and magnetoresistance properties”. Barnabé, A, Millange F, Maignan A, Hervieu M, Raveau B, Van Tendeloo G, Laffez P, Chem. mater. 10, 252 (1998). http://doi.org/10.1021/cm9704084
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 48
DOI: 10.1021/cm9704084
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“Barite formation in the Southern Ocean water column”. Stroobants N, Dehairs F, Goeyens L, Vanderheijden N, Van Grieken R, Marine chemistry 35, 411 (1991). http://doi.org/10.1016/S0304-4203(09)90033-0
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1016/S0304-4203(09)90033-0
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“Bandgap measurement of high refractive index materials by off-axis EELS”. Vatanparast M, Egoavil R, Reenaas TW, Verbeeck J, Holmestad R, Vullum PE, Ultramicroscopy 182, 92 (2017). http://doi.org/10.1016/J.ULTRAMIC.2017.06.019
Abstract: In the present work Cs aberration corrected and monochromated scanning transmission electron microscopy electron energy loss spectroscopy (STEM-EELS) has been used to explore experimental setups that allow bandgaps of high refractive index materials to be determined. Semi-convergence and collection angles in the mu rad range were combined with off-axis or dark field EELS to avoid relativistic losses and guided light modes in the low loss range to contribute to the acquired EEL spectra. Off-axis EELS further supressed the zero loss peak and the tail of the zero loss peak. The bandgap of several GaAs-based materials were successfully determined by simple regression analyses of the background subtracted EEL spectra. The presented set-up does not require that the acceleration voltage is set to below the. Cerenkov limit and can be applied over the entire acceleration voltage range of modern TEMs and for a wide range of specimen thicknesses. (C) 2017 Elsevier B.V. All rights reserved.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.843
Times cited: 3
DOI: 10.1016/J.ULTRAMIC.2017.06.019
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“Bandgap engineering of two-dimensional semiconductor materials”. Chaves A, Azadani JG, Alsalman H, da Costa DR, Frisenda R, Chaves AJ, Song SH, Kim YD, He D, Zhou J, Castellanos-Gomez A, Peeters FM, Liu Z, Hinkle CL, Oh S-H, Ye PD, Koester SJ, Lee YH, Avouris P, Wang X, Low T, npj 2D Materials and Applications 4, 29 (2020). http://doi.org/10.1038/S41699-020-00162-4
Abstract: Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride. In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field. We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Times cited: 604
DOI: 10.1038/S41699-020-00162-4
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“Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes”. Bizindavyi J, Verhulst AS, Smets Q, Verreck D, Sorée B, Groeseneken G, IEEE journal of the Electron Devices Society 6, 633 (2018). http://doi.org/10.1109/JEDS.2018.2834825
Abstract: Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs). We resolve this discrepancy for highly-doped, direct-bandgap Esaki diodes by successfully calibrating a semi-classical model for high-doping-induced ballistic band-tails tunneling currents at multiple temperatures with two In0.53Ga0.47As Esaki diodes using their SIMS doping profiles, C-V characteristics and their forward-bias current density in the negative differential resistance (NDR) regime. The current swing in the NDR regime is shown not to be linked to the band-tails Urbach energy. We further demonstrate theoretically that the calibrated band-tails contribution is also the dominant band-tails contribution to the subthreshold swing of the corresponding TFETs. Lastly, we verify that the presented procedure is applicable to all direct-bandgap semiconductors by successfully applying it to InAs Esaki diodes in literature.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.141
Times cited: 5
DOI: 10.1109/JEDS.2018.2834825
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“Band-gap tuning of graphene by Be doping and Be, B co-doping : a DFT study”. Ullah S, Hussain A, Syed WA, Saqlain MA, Ahmad I, Leenaerts O, Karim A, RSC advances 5, 55762 (2015). http://doi.org/10.1039/c5ra08061d
Abstract: First-principles density functional theory (DFT) calculations were carried out to investigate the structural and electronic properties of beryllium (Be) doped and Be and boron (B) co-doped graphene systems. We observed that not only the concentration of impurity atoms is important to tune the band-gap to some desired level, but also the specific substitution sites play a key role. In our system, which consists of 32 atoms, a maximum of 4Be and, in the co-doped state, 2Be and 3B atom substitutions are investigated. Both dopants are electron deficient relative to C atoms and cause the Fermi level to shift downward (p-type doping). A maximum band gap of 1.44 eV can be achieved on incorporation of 4Be atoms. The introduction of Be is more sensitive in terms of geometry and stability than B. However, in opening the energy gap, Be is more effective than B and N (nitrogen). Our results offer the possibility to modify the band-gap of graphene sufficiently for utilization in diverse electronic device applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.108
Times cited: 33
DOI: 10.1039/c5ra08061d
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“Band-gap formation and morphing in alpha-T-3 superlattices”. Cunha SM, de Costa DR, Pereira Jr JM, Costa Filho RN, Van Duppen B, Peeters FM, Physical Review B 104, 115409 (2021). http://doi.org/10.1103/PHYSREVB.104.115409
Abstract: Electrons in alpha-T-3 lattices behave as condensed-matter analogies of integer-spin Dirac fermions. The three atoms making up the unit cell bestow the energy spectrum with an additional energy band that is completely flat, providing unique electronic properties. The interatomic hopping term, alpha, is known to strongly affect the electronic spectrum of the two-dimensional (2D) lattice, allowing it to continuously morph from graphenelike responses to the behavior of fermions in a dice lattice. For pristine lattice structures the energy bands are gapless, but small deviations in the atomic equivalence of the three sublattices will introduce gaps in the spectrum. It is unknown how these affect transport and electronic properties such as the energy spectrum of superlattice minibands. Here we investigate the dependency of these properties on the parameter a accounting for different symmetry-breaking terms, and we show how it affects band-gap formation. Furthermore, we find that superlattices can force band gaps to close and shift in energy. Our results demonstrate that alpha-T-3 superlattices provide a versatile material for 2D band-gap engineering purposes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 9
DOI: 10.1103/PHYSREVB.104.115409
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“Band structure, density of states, and transmission in graphene bilayer superlattices”. Barbier M, Vasilopoulos P, Peeters FM, Pereira JM, AIP conference proceedings 1199, 547 (2009). http://doi.org/10.1063/1.3295550
Abstract: The energy spectrum and density of states of graphene bilayer superlattices (SLs) are evaluated. We take into account doping and/or gating of the layers as well as tunnel coupling between them. In addition, we evaluate the transmission through such SLs and through single or double barriers. The transmission exhibits a strong dependence on the direction of the incident wave vector.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
DOI: 10.1063/1.3295550
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“Band structure quantization in nanometer sized ZnO clusters”. Schouteden K, Zeng Y-J, Lauwaet K, Romero CP, Goris B, Bals S, Van Tendeloo G, Lievens P, Van Haesendonck C, Nanoscale 5, 3757 (2013). http://doi.org/10.1039/c3nr33989k
Abstract: Nanometer sized ZnO clusters are produced in the gas phase and subsequently deposited on clean Au(111) surfaces under ultra-high vacuum conditions. The zinc blende atomic structure of the approximately spherical ZnO clusters is resolved by high resolution scanning transmission electron microscopy. The large band gap and weak n-type conductivity of individual clusters are determined by scanning tunnelling microscopy and spectroscopy at cryogenic temperatures. The conduction band is found to exhibit clear quantization into discrete energy levels, which can be related to finite-size effects reflecting the zero-dimensional confinement. Our findings illustrate that gas phase cluster production may provide unique possibilities for the controlled fabrication of high purity quantum dots and heterostructures that can be size selected prior to deposition on the desired substrate under controlled ultra-high vacuum conditions.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 7.367
Times cited: 13
DOI: 10.1039/c3nr33989k
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“Band structure of a two-dimensional electron gas in the presence of two-dimensional electric and magnetic modulations and a perpendicular magnetic field”. Wang XF, Vasilopoulos P, Peeters FM, Physical review : B : condensed matter and materials physics 70, 155312 (2004). http://doi.org/10.1103/PhysRevB.70.155312
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 6
DOI: 10.1103/PhysRevB.70.155312
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“Band gap and magnetism engineering in Dirac half-metallic Na2C nanosheet via layer thickness, strain and point defects”. Bafekry A, Mortazavic B, Shayesteh SF, Journal of magnetism and magnetic materials 491, 165565 (2019). http://doi.org/10.1016/J.JMMM.2019.165565
Abstract: Na2C is a novel two-dimensional material with Dirac Half-metal (DHM) characteristic, exhibiting a combination of single-spin massless Dirac fermions and half-semimetal. In this paper based on the first-principles calculations, we studied the mechanical, electronic, magnetic and optical properties of Na2C nanosheet. The elastic modulus of Na2C was measured to 18.5 N/m and isotropic, whereas it shows anisotropic tensile strengths of 2.85 and 2.04 N/m, for the loading along the zigzag and armchair directions, respectively. We found that Na2C, is a DHM with band gap of 0.7 eV in the up-spin channel and has 2 mu(B) magnetic moment per unit cell. In addition, we investigated the effects of number of atomic layers (thickness), electric field and strain on the possibility of further tuning of the electronic and magnetic properties of Na2C. Our calculations show that by increasing the number of layers from monolayer to bulk, a transition from DHM to ferromagnetic metal occurs with a high magnetic moments in the range of 16-30 mu(B). With applying an electric field on the Na2C bilayer (within the ferromagnetic and anti-ferromagnetic orders), energy band gap is slightly increased. In addition our results indicate that the electronic structure can be significantly modified by applying the mechanical straining. In this regard, under the biaxial strain (from 0% to – 8%) or large uniaxial strains (> – 6%), we observed the DHM to ferromagnetic-metal transition. Moreover, vacancy defects and atom substitutions can also effect the electronic and magnetic properties of Na2C nanosheet. Defective Na2C with single and double vacancies, was found to show the metallic response. With various atom substitutions this nanosheet exhibits; ferromagnetic-metal (Si and Be) with 5.2 and 3 mu(B); dilute-magnetic semiconductor (B and N) with 3 and 7 mu(B) magnetic moments, respectively. In the case of B or N atoms replacing the native C atom, the down-spin channel yields about 1 eV band gap. Interestingly, replacing the Na atoms in the native Na2C lattice with the Li can result in the formation of magnetic topological insulator phase with nontrivial band gap in the down-spin channel (25 meV and 0.15 eV) and up-spin channel (0.75 eV), in addition exhibit 8 mu(B) magnetic moment in the ground state.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.63
Times cited: 13
DOI: 10.1016/J.JMMM.2019.165565
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“Band flattening in buckled monolayer graphene”. Milovanović, SP, Andelkovic M, Covaci L, Peeters FM, Physical Review B 102, 245427 (2020). http://doi.org/10.1103/PHYSREVB.102.245427
Abstract: The strain fields of periodically buckled graphene induce a periodic pseudomagnetic field (PMF) that modifies the electronic band structure. From the geometry, amplitude, and period of the periodic pseudomagnetic field, we determine the necessary conditions to access the regime of correlated phases by examining the band flattening. As compared to twisted bilayer graphene the proposed system has the advantages that (1) only a single layer of graphene is needed, (2) one is not limited to hexagonal superlattices, and (3) narrower flat bandwidth and larger separation between flat bands can be induced. We, therefore, propose that periodically strained graphene single layers can become a platform for the exploration of exotic many-body phases.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.7
Times cited: 27
DOI: 10.1103/PHYSREVB.102.245427
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“Band alignment of lateral two-dimensional heterostructures with a transverse dipole”. Leenaerts O, Vercauteren S, Partoens B, Applied physics letters 110, 181602 (2017). http://doi.org/10.1063/1.4982791
Abstract: It was recently shown that the electronic band alignment in lateral two-dimensional heterostructures is strongly dependent on the system geometry, such as heterostructure width and layer thickness. This is so even in the absence of polar edge terminations because of the appearance of an interface dipole between the two different materials. In this study, this work is expanded to include two-dimensional materials that possess an electronic dipole over their surface, i.e., in the direction transverse to the crystal plane. To this end, a heterostucture consisting of polar hydrofluorinated graphene and non-polar graphane layers is studied with first-principles calculations. As for nonpolar heterostructures, a significant geometry dependence is observed with two different limits for the band offset. For infinitely wide heterostructures, the potential step in the vacuum is equally divided over the two sides of the heterostructure, resulting in a finite potential step in the heterostructure. For infinitely thick heterostructure slabs, on the other hand, the band offset is reduced, similar to the three-dimensional case.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 4
DOI: 10.1063/1.4982791
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“Ballistic thermoelectric properties of monolayer semiconducting transition metal dichalcogenides and oxides”. Ozbal G, Senger RT, Sevik C, Sevincli H, Physical review B 100, 085415 (2019). http://doi.org/10.1103/PHYSREVB.100.085415
Abstract: Combining first-principles calculations with Landauer-Mittiker formalism, ballistic thermoelectric transport properties of semiconducting two-dimensional transition metal dichalcogenides (TMDs) and oxides (TMOs) (namely MX2 with M = Cr, Mo, W, Ti, Zr, Hf; X = O, S, Se, Te) are investigated in their 2H and 1T phases. Having computed structural, as well as ballistic electronic and phononic transport properties for all structures, we report the thermoelectric properties of the semiconducting ones. We find that 2H phases of four of the studied structures have very promising thermoelectric properties, unlike their 1T phases. The maximum room temperature p-type thermoelectric figure of merit (ZT) of 1.57 is obtained for 2H-HfSe2, which can be as high as 3.30 at T = 800 K. Additionally, 2H-ZrSe2, 2H-ZrTe2, and 2H-HfS2 have considerable ZT values (both nand p-type), that are above 1 at room temperature. The 1T phases of Zr and Hf-based oxides possess relatively high power factors, however their high lattice thermal conductance values limit their ZT values to below 1 at room temperature.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
DOI: 10.1103/PHYSREVB.100.085415
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“Ballistic spin transport through electronic stub tuners : spin precession, selection, and square-wave transmission”. Wang XF, Vasilopoulos P, Peeters FM, Applied physics letters 80, 1400 (2002). http://doi.org/10.1063/1.1455146
Abstract: Ballistic spin transport is studied through electronic tuners with double stubs attached to them. The spins precess due to the spin-orbit interaction. Injected polarized spins can exit the structure polarized in the opposite direction. A nearly square-wave spin transmission, with values 1 and 0, can be obtained using a periodic system of symmetric stubs and changing their length or width. The gaps in the transmission can be widened using asymmetric stubs. An additional modulation is obtained upon combining stub structures with different values of the spin-orbit strength. D 2002 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 49
DOI: 10.1063/1.1455146
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“Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene”. Lane TLM, Andelkovic M, Wallbank JR, Covaci L, Peeters FM, Fal'ko VI, Physical review B 97, 045301 (2018). http://doi.org/10.1103/PHYSREVB.97.045301
Abstract: <script type='text/javascript'>document.write(unpmarked('We show that delaminations in bilayer graphene (BLG) with electrostatically induced interlayer symmetry can provide one with ballistic channels for electrons with energies inside the electrostatically induced BLG gap. These channels are formed by a combination of valley-polarized evanescent states propagating along the delamination edges (which persist in the presence of a strong magnetic field) and standing waves bouncing between them inside the delaminated region (in a strong magnetic field, these transform into Landau levels in the monolayers). For inverted stackings in BLGs on the left and right of the delamination (AB-2ML-BA or BA-2ML-AB, where 2ML indicates two decoupled monolayers of graphene), the lowest-energy ballistic channels are gapless, have linear dispersion, and appear to be weakly topologically protected. When BLG stackings on both sides of the delamination are the same (AB-2ML-AB or BA-2ML-BA), the lowest-energy ballistic channels are gapped, with a gap epsilon(g) scaling as epsilon(g) alpha W-1 with delamination width and epsilon(g) alpha delta(-1) with the on-layer energy difference in the delaminated part of the structure. Depending on the width, delaminations may also support several \u0022higher-energy\u0022 waveguide modes. Our results are based on both the analytical study of the wave matching of Dirac states and tight-binding model calculations, and we analyze in detail the dependence of the delamination spectrum on the electrostatic conditions in the structure, such as the vertical displacement field.'));
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 11
DOI: 10.1103/PHYSREVB.97.045301
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“Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology”. Pourghaderi MA, Magnus W, Sorée B, Meuris M, de Meyer K, Heyns M, Journal of applied physics 106, 053702 (2009). http://doi.org/10.1063/1.3197635
Abstract: In this study we investigate the effect of device topology on the ballistic current in n-channel metal-oxide-semiconductor field-effect transistors. Comparison of the nanoscale planar and double-gate devices reveals that, down to a certain thickness of the double gate film, the ballistic current flowing in the double gate device is twice as large compared to its planar counterpart. On the other hand, further thinning of the film beyond this threshold is found to change noticeably the confinement and transport characteristics, which are strongly depending on the film material and the surface orientation. For double gate Ge and Si devices there exists a critical film thickness below which the transverse gate field is no longer effectively screened by the inversion layer electron gas and mutual inversion of the two gates is turned on. In the case of GaAs and other similar IIIV compounds, a decrease in the film thickness may drastically change the occupation of the L-valleys and therefore amend the transport properties. The simulation results show that, in both cases, the ballistic current and the transconductance are considerably enhanced.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 3
DOI: 10.1063/1.3197635
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“Ball milling effect on the structure of single-wall carbon nanotubes”. Pierard N, Fonseca A, Colomer J-F, Bossuot C, Benoit J-M, Van Tendeloo G, Pirard J-P, Nagy JB, Carbon 42, 1691 (2004). http://doi.org/10.1016/j.carbon.2004.02.031
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 6.337
Times cited: 133
DOI: 10.1016/j.carbon.2004.02.031
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“Balancing flocs and granules by external selectors to increase capacity in high-rate activated sludge systems”. Van Winckel T, De Clippeleir H, Mancell-Egala A, Rahman A, Wett B, Bott C, Sturm B, Vlaeminck SE, Al-Omari A, Murthy S, , 6 p.
T2 (2016)
Keywords: P3 Proceeding; Engineering sciences. Technology; Sustainable Energy, Air and Water Technology (DuEL)
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“BaHfO3artificial pinning centres in TFA-MOD-derived YBCO and GdBCO thin films”. Erbe M, Hänisch J, Hühne R, Freudenberg T, Kirchner A, Molina-Luna L, Damm C, Van Tendeloo G, Kaskel S, Schultz L, Holzapfel B, Superconductor science and technology 28, 114002 (2015). http://doi.org/10.1088/0953-2048/28/11/114002
Abstract: Chemical solution deposition (CSD) is a promising way to realize REBa2Cu3O7−x (REBCO;RE = rare earth (here Y, Gd))-coated conductors with high performance in applied magnetic fields. However, the preparation process contains numerous parameters which need to be tuned to achieve high-quality films. Therefore, we investigated the growth of REBCO thin films containing nanometre-scale BaHfO3 (BHO) particles as pinning centres for magnetic flux lines, with emphasis on the influence of crystallization temperature and substrate on the microstructure and superconductivity. Conductivity, microscopy and x-ray investigations show an enhanced performance of BHO nano-composites in comparison to pristine REBCO. Further, those measurements reveal the superiority of GdBCO to YBCO—e.g. by inductive critical current densities, Jc, at self-field and 77 K. YBCO is outperformed by more than 1 MA cm−2 with Jc values of up to 5.0 MA cm−2 for 265 nm thick layers of GdBCO(BHO) on lanthanum aluminate. Transport in-field Jc measurements demonstrate high pinning force maxima of around 4 GN m−3 for YBCO(BHO) and GdBCO(BHO). However, the irreversibility fields are appreciably higher for GdBCO. The critical temperature was not significantly reduced upon BHO addition to both YBCO and GdBCO, indicating a low tendency for Hf diffusion into the REBCO matrix. Angular-dependent Jc measurements show a reduction of the anisotropy in the same order of magnitude for both REBCO compounds. Theoretical models suggest that more than one sort of pinning centre is active in all CSD films.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.878
Times cited: 36
DOI: 10.1088/0953-2048/28/11/114002
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“Badanie składu powietrza w zabytkowych kościołach”. Samek L, Worobiec A, Spolnik Z, Van Grieken R, Analytika , 26 (2006)
Keywords: A3 Journal article; Laboratory Experimental Medicine and Pediatrics (LEMP); AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Bacterial inactivation by plasma treated water enhanced by reactive nitrogen species”. Shaw P, Kumar N, Kwak HS, Park JH, Uhm HS, Bogaerts A, Choi EH, Attri P, Scientific reports 8, 11268 (2018). http://doi.org/10.1038/s41598-018-29549-6
Abstract: There is a growing body of literature that recognizes the importance of plasma treated water (PTW)for inactivation of microorganism. However, very little attention has been paid to the role of reactive nitrogen species (RNS) in deactivation of bacteria. The aim of this study is to explore the role of RNS in bacterial killing, and to develop a plasma system with increased sterilization efficiency. To increase the concentration of reactive oxygen and nitrogen species (RONS) in solution, we have used vapor systems (DI water/HNO3 at different wt%) combined with plasma using N2 as working gas. The results show that the addition of the vapor system yields higher RONS contents. Furthermore, PTW produced by N2 + 0.5 wt% HNO3 vapor comprises a large amount of both RNS and ROS, while PTW created by N2 + H2O vapor consists of a large amount of ROS, but much less RNS. Interestingly, we observed more deactivation of E. Coli with PTW created by N2 + 0.5 wt% HNO3 vapor plasma as compared to PTW generated by the other plasma systems. This work provides new insight into the role of RNS along with ROS for deactivation of bacteria.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
Impact Factor: 4.259
Times cited: 17
DOI: 10.1038/s41598-018-29549-6
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“Background aerosol concentrations at the Namib-Atlantic interface”. Annegarn HJ, Van Grieken RE, Winchester JW, Sellschop JPF, von Blottnitz F, (1979)
Keywords: P3 Proceeding; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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“Background aerosol composition in the Namib Desert, South West-Africa (Namibia)”. Annegarn HJ, Van Grieken RE, Dibby DM, Von Blottnitz F, Atmospheric environment : an international journal 17, 2045 (1983). http://doi.org/10.1016/0004-6981(83)90361-X
Abstract: A remote site in the Namib Desert was selected for sampling background aerosols in southern Africa, as one of a wide network of stations spanning the Southern Hemisphere in a programme designed to measure the background concentrations of trace elements in the atmosphere. A series of samples was collected over a 6-month period using a single-orifice cascade impactor, which fractionated the particles into six size groups. Analysis was performed using particle-induced X-ray emission (PIXE), yielding results for S, Cl, K, Ca, Ti, Mn, Fe, Br and Sr, and occasionally also for V, Cr, Ni, Cu, Zn and Pb. No direct correlations with wind direction were observed excluding strong local or regional sources of particles. K, Ca, Ti, Mn and Fe can be identified with a dust dispersion source. Cl, large particle S and Br, and part of the K and Sr are derived from sea spray. Relative to the soil components small particle K is not enriched as it normally is in regions with less scarce vegetation. Cr, V, Ni, Cu, Zn and Pb concentrations and enrichments in the aerosol are lower than practically all values measured at any other location hitherto. The concentration of the small particle sulphur, 200 ng m−3, is believed to be related to anaerobic conditions and plankton blooms in the ocean upwelling zones off Namibia.
Keywords: A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
DOI: 10.1016/0004-6981(83)90361-X
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“Background aerosol composition at Gobabeb, South West Africa”. Annegarn H, Van Grieken R, van Espen P, von Blottnitz F, Sellschop J, Winchester J, Maenhaut W, Madoqua , 107 (1976)
Keywords: A3 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Chemometrics (Mitac 3)
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“Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions”. Devolder T, Bultynck O, Bouquin P, Nguyen VD, Rao S, Wan D, Sorée B, Radu IP, Kar GS, Couet S, Physical Review B 102, 184406 (2020). http://doi.org/10.1103/PHYSREVB.102.184406
Abstract: We analyze the phenomenon of back hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot time-resolved conductance measurements of the pulse-induced back hopping. Studying several material variants reveals that the back hopping is a feature of the nominally fixed system of the tunnel junction. The back hopping is found to proceed by two sequential switching events that lead to a final state P' of conductance close to-but distinct from-that of the conventional parallel state. The P' state does not exist at remanence. It generally relaxes to the conventional antiparallel state if the current is removed. The P' state involves a switching of the sole spin-polarizing part of the fixed layers. The analysis of literature indicates that back hopping occurs only when the spin-polarizing layer is too weakly coupled to the rest of the fixed system, which justifies a posteriori the mitigation strategies of back hopping that were implemented empirically in spin-transfer-torque magnetic random access memories.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.7
DOI: 10.1103/PHYSREVB.102.184406
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