Abstract: The peculiarities of sputtering processes at 0.5-5 keV Ne grazing ion bombardment of Si(001) and SiC(001) surfaces and their possible application for the surface modification have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms regime versus the initial energy of incident ions (E(0) = 0.5-5 keV) and angle of incidence (psi = 0-30 degrees) counted from a target surface have been calculated. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed.

Abstract: Scaling down the size of transistors has been a trend for several decades which has led to improved transistor performance, increased transistor density and hence the overall computation power of IC chips. The trend slowed in recent years due to reliability and power consumption issues at the nanoscale. Hence strain is introduced into transistor channels that has beneficial effects on improving the mobility of charge carriers, providing an alternative pathway for enhancing transistor performance. Therefore, monitoring strain is vital for the semiconductor industry. With the recent trend of decreasing device dimensions (FinFETS ~ 10-20nm) and strain modulation being used throughout, industry needs a reliable and fast method as quality control or defect characterisation. Such a universal strain measurement method does not exist, and one relies on a combination of quantitative in-line methods and complex off-line approaches. In this thesis, I investigated TEM and Raman spectroscopy-based methodologies for strain measurement. In terms of TEM methodologies, advancements are made for the STEM moiré imaging, targeting strain spatial resolution enhancement. I introduce advanced quadrature demodulation and phase stepping interferometry applied to STEM moiré that greatly enhances the spatial resolution while providing enhanced field of view and sensitivity for strain measurement. We introduce ways to reduce scan distortions in strain maps using an alternative scan strategy called “Block scanning” and the non-linear regression applied for strain extraction. Prospects for 3D strain analysis using high-resolution tomography is also investigated which gives direct access for the full second order strain tensors calculation. Finally, we compare strain measurements from TEM techniques with inline techniques like Raman spectroscopy. Raman stress measurement involves sensitive identification of the TO and LO phonon peaks. Raman spectrum of strained Ge transistor channel consists of strongly overlapping peaks within the spectral resolution of the spectrometer. Hence, the process of deconvolution of the two peaks is rather challenging. Hence, we explore new polarisation geometries like radially polarised incoming light which was shown to ease the deconvolution problem resulting in improved precision for Raman stress–strain measurements.