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“A La2−xGdxZr2O7layer deposited by chemical solution: a promising seed layer for the fabrication of high Jcand low cost coated conductors”. Muguerra H, Pescheux A-C, Meledin A, Van Tendeloo G, Soubeyroux J-L, Journal of materials chemistry C : materials for optical and electronic devices 3, 11766 (2015). http://doi.org/10.1039/C5TC03365A
Abstract: We deposited La2-xGdxZr2O7 seed layers by a chemical solution method on a Ni-5%W substrate to study the influence of these layers on the growth process of a 60 nm-thick La2Zr2O7 layer. We measured the performances of these new buffer layers integrated in a coated conductor with a 300 nm-thick Y0.5Gd0.5Ba2Cu3O7-x layer. For the seed layers{,} we considered two different gadolinium contents (x = 0.2 and x = 0.8) and three different thicknesses for these compositions (20 nm{,} 40 nm{,} and 60 nm). The most promising buffer layer stacks are those with 20 nm of the La1.8Gd0.2Zr2O7 layer or La1.2Gd0.8Zr2O7. Indeed the La2-xGdxZr2O7/La2Zr2O7 films are highly textured{,} similar to a 100 nm-thick La2Zr2O7 layer{,} but their roughness is four times lower. Moreover they contain less and smaller pores in the seed layer than a pure La2Zr2O7 layer. The surface of La2Zr2O7 is also homogenous and crystalline with an orientation deviation from the ideal ?011? (100) direction below 10[degree]. With the 20 nm La2-xGdxZr2O7 seed layers we obtain in the coated conductors an efficiently textured transfer with no gradual degradation from the substrate throughout the superconducting layer. The highest Tc and Jc values are achieved with the La1.8Gd0.2Zr2O7 layer and are{,} respectively{,} 91 K and 1.4 MA cm-2. This trend seems to be due to an improvement of the surface quality of the Ni5%W substrate by the addition of a thin seed layer. Our results offer the potential of the La2-xGdxZr2O7 seed layers as promising alternatives for the classic Ni-5%W/LZO/CeO2/YBCO architectures.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 5.256
Times cited: 4
DOI: 10.1039/C5TC03365A
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“3D porous nanostructured platinum prepared using atomic layer deposition”. Pulinthanathu Sree S, Dendooven J, Geerts L, Ramachandran RK, Javon E, Ceyssens F, Breynaert E, Kirschhock CEA, Puers R, Altantzis T, Van Tendeloo G, Bals S, Detavernier C, Martens JA, Journal of materials chemistry A : materials for energy and sustainability 5, 19007 (2017). http://doi.org/10.1039/C7TA03257A
Abstract: A robust and easy to handle 3D porous platinum structure was created via replicating the 3D channel system
of an ordered mesoporous silica material using atomic layer deposition (ALD) over micrometer distances.
After ALD of Pt in the silica material, the host template was digested using hydrogen fluoride (HF). A fully
connected ordered Pt nanostructure was obtained with morphology and sizes corresponding to that of
the pores of the host matrix, as revealed with high-resolution scanning transmission electron
microscopy and electron tomography. The Pt nanostructure consisted of hexagonal Pt rods originating
from the straight mesopores (11 nm) of the host structure and linking features resulting from Pt
replication of the interconnecting mesopore segments (2–4 nm) present in the silica host structure.
Electron tomography of partial replicas, made by incomplete infilling of Zeotile-4 material with Pt,
provided insight in the connectivity and formation mechanism of the Pt nanostructure by ALD. The Pt
replica was evaluated for its potential use as electrocatalyst for the hydrogen evolution reaction, one of
the half-reactions of water electrolysis, and as microelectrode for biomedical sensing. The Pt replica
showed high activity for the hydrogen evolution reaction and electrochemical characterization revealed
a large impedance improvement in comparison with reference Pt electrodes.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 8.867
Times cited: 9
DOI: 10.1039/C7TA03257A
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