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Records |
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Author |
Bogaerts, A.; Gijbels, R. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Two-dimensional model of a direct current glow discharge : description of the argon metastable atoms, sputtered atoms and ions |
Type |
A1 Journal article |
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Year |
1996 |
Publication |
Analytical chemistry |
Abbreviated Journal |
Anal Chem |
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Volume |
68 |
Issue |
15 |
Pages |
2676-2685 |
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Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
A two-dimensional model is presented that describes the behavior of argon metastable atoms, copper atoms, and copper ions in an argon direct. current glow discharge, in the standard cell of the VG9000 glow discharge mass spectrometer for analyzing flat samples. The model is combined with a previously developed model for the electrons, argon ions, and atoms in the same cell to obtain an overall picture of the glow discharge, The results of the present model comprise the number densities of the described plasma species, the relative contributions of different production and loss processes for the argon metastable atoms, the thermalization profile of the sputtered copper atoms, the relative importance of the different ionization mechanisms for the copper atoms, the ionization degree of copper, the copper ion-to-argon ion density ratio, and the relative roles of copper ions, argon ions, and atoms in the sputtering process. All these quantities are calculated for a range of voltages and pressures, Moreover, since the sticking coefficient of copper atoms on solid surfaces is not well-known in the literature, the influence of this parameter on the results is briefly discussed. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington, D.C. |
Editor |
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Language |
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Wos |
A1996VA00300042 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-2700;1520-6882; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
5.636 |
Times cited |
57 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:16242 |
Serial |
3775 |
Permanent link to this record |
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Author |
Bogaerts, A.; Gijbels, R.; Goedheer, W.J. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Two-dimensional model of a direct current glow discharge: description of the electrons, argon ions and fast argon atoms |
Type |
A1 Journal article |
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Year |
1996 |
Publication |
Analytical chemistry |
Abbreviated Journal |
Anal Chem |
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Volume |
68 |
Issue |
14 |
Pages |
2296-2303 |
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Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Washington, D.C. |
Editor |
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Language |
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Wos |
A1996UY08700002 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-2700;1520-6882; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
5.636 |
Times cited |
70 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:16241 |
Serial |
3776 |
Permanent link to this record |
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Author |
Charlier, E.; van Doorselaer, M.; Gijbels, R.; de Keyzer, R.; Geuens, I. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Unveiling the composition of sulphur sensitization specks by their interactions with TAI |
Type |
A1 Journal article |
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Year |
2000 |
Publication |
Journal Of Imaging Science And Technology |
Abbreviated Journal |
J Imaging Sci Techn |
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Volume |
44 |
Issue |
3 |
Pages |
235-241 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
A two-step process for the formation of sensitivity centers different from earlier described two-step processes was found for sulfur sensitized emulsions. After deposition of sulfur in the first step, it was found that the second step does not consist of rearrangement of sulfur over the surface, but of the supply of silver interstitial ions towards the deposited sulfur clusters. The two processes could be separated by adsorbing and desorbing TAI (4-hydroxy-1, 3,3a, 7-tetraazaindene) at/from the silver halide surface. When 1.5 mmol TAI/mol Ag is added before the sulfur reaction, the silver interstitials are immobilized but sulfur still can be deposited at the same level. By lowering the pH to 2.50 after this sulfur reaction, TAI is desorbed from the surface and the released interstitials then cause a restoration of the properties of a sulfur system without TAI. These effects could be demonstrated via diffuse reflectance spectroscopy (DRS), sensitometry and dielectric loss measurements. We could also confirm the isolation of silver sulfide clusters by TAI from other chemicals in the solution, by adsorption of TAI on the clusters. |
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Publisher |
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Place of Publication |
Springfield, Va |
Editor |
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Wos |
000087651100010 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1062-3701 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
0.348 |
Times cited |
16 |
Open Access |
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Notes |
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Approved |
Most recent IF: 0.348; 2000 IF: NA |
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Call Number |
UA @ lucian @ c:irua:34075 |
Serial |
3820 |
Permanent link to this record |
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Author |
Conard, T.; de Witte, H.; Loo, R.; Verheyen, P.; Vandervorst, W.; Caymax, M.; Gijbels, R. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers |
Type |
A1 Journal article |
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Year |
1999 |
Publication |
Thin solid films : an international journal on the science and technology of thin and thick films |
Abbreviated Journal |
Thin Solid Films |
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Volume |
343/344 |
Issue |
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Pages |
583-586 |
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Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam : Elsevier |
Editor |
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Language |
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Wos |
000081103100149 |
Publication Date |
2002-07-26 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0040-6090; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.879 |
Times cited |
1 |
Open Access |
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Notes |
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Approved |
Most recent IF: 1.879; 1999 IF: 1.101 |
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Call Number |
UA @ lucian @ c:irua:24934 |
Serial |
3926 |
Permanent link to this record |
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Author |
de Witte, H.; Conard, T.; Sporken, R.; Gouttebaron, R.; Magnee, R.; Vandervorst, W.; Caudano, R.; Gijbels, R. |
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Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
XPS study of ion induced oxidation of silicon with and without oxygen flooding |
Type |
P3 Proceeding |
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Year |
2000 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
73-76 |
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Keywords |
P3 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:34079 |
Serial |
3927 |
Permanent link to this record |