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“TEM observation of aggregation steps in room-temperature silicalite-1 zeolite formation”. Liang D, Follens LRA, Aerts A, Martens JA, Van Tendeloo G, Kirschhock CEA, Journal of physical chemistry C 111, 14283 (2007). http://doi.org/10.1021/jp074960k
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 4.536
Times cited: 41
DOI: 10.1021/jp074960k
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“Tetramethylbenzidine-TetrafluoroTCNQ (TMB-TCNQF(4)) : a narrow-gap semiconducting salt with room-temperature relaxor ferroelectric behavior”. Canossa S, Ferrari E, Sippel P, Fischer JKH, Pfattner R, Frison R, Masino M, Mas-Torrent M, Lunkenheimer P, Rovira C, Girlando A, Journal Of Physical Chemistry C 125, 25816 (2021). http://doi.org/10.1021/ACS.JPCC.1C07131
Abstract: We present an extension and revision of the spectroscopic and structural data of the mixed-stack charge-transfer (CT) crystal 3,3 ',5,5 '-tetramethylbenzidine-tetrafluorotetracyano-quinodimethane (TMB-TCNQF4), associated with new electric and dielectric measurements. Refinement of synchrotron structural data at low temperature has led to revise the previously reported C2/m structure. The revised structure is P2(1)/m, with two dimerized stacks per unit cell, and is consistent with the low temperature vibrational data. However, polarized Raman data in the low-frequency region also indicate that by increasing temperature above 200 K, the structure presents an increasing degree of disorder, mainly along the stack axis. X-ray diffraction data at room temperature have confirmed that the correct structure is P2(1)/ m -no phase transitions -but did not allow substantiating the presence of disorder. On the other hand, dielectric measurements have evidenced a typical relaxor ferroelectric behavior already at room temperature, with a peak in the real part of dielectric constant epsilon'(T,v) around 200 K and 0.1 Hz. The relaxor behavior is explained in terms of the presence of spin solitons separating domains of opposite polarity that yield to ferroelectric nanodomains. TMB-TCNQF(4) is confirmed to be a narrow-gap band semiconductor (Ea similar to 0.3 eV) with a room-temperature conductivity of similar to 10(-4) Omega(-1) cm(-1).
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 4.536
DOI: 10.1021/ACS.JPCC.1C07131
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“Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing”. Nourbakhsh A, Cantoro M, Klekachev A, Clemente F, Sorée B, van der Veen MH, Vosch T, Stesmans A, Sels B, de Gendt S, Journal Of Physical Chemistry C 114, 6894 (2010). http://doi.org/10.1021/jp910085n
Abstract: The effects of thermal annealing in inert Ar gas atmosphere of SiO2-supported, exfoliated single-layer graphene are investigated in this work. A systematic, reproducible change in the electronic properties of graphene is observed after annealing. The most prominent Raman features in graphene, the G and 2D peaks, change in accord to what is expected in the case of hole doping. The results of electrical characterization performed on annealed, back-gated field-effect graphene devices show that the neutrality point voltage VNP increases monotonically with the annealing temperature, confirming the occurrence of excess hole accumulation. No degradation of the structural properties of graphene is observed after annealing at temperatures as high as 400 °C. Thermal annealing of single-layer graphene in controlled Ar atmosphere can therefore be considered a technique to reproducibly modify the electronic structure of graphene by tuning its Fermi level.
Keywords: A1 Journal article; Electron Microscopy for Materials Science (EMAT);
Impact Factor: 4.536
Times cited: 54
DOI: 10.1021/jp910085n
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