Number of records found: 138
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Citations
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Direct current glow discharge mass spectrometric analysis of Macor ceramic using a secondary cathode”. Schelles W, Van Grieken R, Analytical chemistry 68, 3570 (1996). http://doi.org/10.1021/AC960441U
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D- centers probed by resonant tunneling spectroscopy”. Lok JGS, Geim AK, Maan JC, Marmorkos I, Peeters FM, Mori N, Eaves L, Forster TJ, Main PC, Sakai JW, Henini M, Physical review : B : condensed matter and materials physics 53, 9554 (1996)
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Effects of DX centers on electronic structure of a ?-doped quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, , 2355 (1996)
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Effects of marine spray and air pollution on monuments in the Mediterranean coastal environment”. Torfs K, Van Grieken R page 170 (1996).
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Effects of the DX centers on electronic structure of a δ-doped quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, , 2355 (1996)
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Electron capture in GaAs quantum wells via electron-electron and optic phonon scattering”. Kálna K, Mo×ko M, Peeters FM, Applied physics letters 68, 117 (1996)
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Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+”. Frangis N, van Landuyt J, Grimaldi MG, Calcagno L, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 –, Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France 120, 186 (1996). http://doi.org/10.1016/S0168-583X(96)00506-X
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Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate”. Frangis N, Van Tendeloo G, van Landuyt J, Muret P, Nguyen TTA, Applied surface science 102, 163 (1996). http://doi.org/10.1016/0169-4332(96)00040-2
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Electron probe X-ray microanalysis for the assessment of homogeneity of candidate reference materials at the nanogram level”. Hoornaert S, Treiger B, Van Grieken R, Valkovic V page 29 (1996).
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Electronic structure of a Si \delta-doped layer in a GaAs/AlxGa1-xAs/GaAs quantum barrier”. Shi JM, Koenraad PM, van de Stadt AFW, Peeters FM, Devreese JT, Wolter JH, Physical Review B 54, 7996 (1996). http://doi.org/10.1103/PhysRevB.54.7996
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Electronic structure, screening and charging effects at a metal/organic tunneling junction: a first principles study”. Lamoen D, Ballone P, Parrinello M, Physical review B 54, 5097 (1996)
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Electrons in a periodic magnetic field”. Ibrahim IS, Peeters FM, Surface science : a journal devoted to the physics and chemistry of interfaces 361/362, 341 (1996). http://doi.org/10.1016/0039-6028(96)00417-7
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Energy-filtering TEM and electron energy-loss spectroscopy of double structure tabular microcrystals of silver halide emulsions”. Oleshko V, Gijbels R, Jacob W, Journal of microscopy 183, 27 (1996). http://doi.org/10.1046/j.1365-2818.1996.73068.x
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Evolution of superconducting islands in a square mesoscopic loop”. Fomin VM, Misko VR, Devreese JT, Moshchalkov VV, Phantoms newsletter 12, 7 (1996)
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Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields”. Bogaerts R, Herlach F, de Keyser A, Peeters FM, DeRosa F, Palmstrøm CJ, Brehmer D, Allen SJ, Physical review : B : condensed matter and materials physics 53, 15951 (1996). http://doi.org/10.1103/PhysRevB.53.15951
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From Bi4V2O11 to Bi4V2O10.66: the VV-VIV transformation in the Aurovillius-type framework”. Huvé, M, Vannier R-N, Nowogrocki G, Mairesse G, Van Tendeloo G, Journal of materials chemistry 6, 1339 (1996). http://doi.org/10.1039/jm9960601339
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Geometry and electronic structure of porphyrines and porphyrazines”. Lamoen D, Parrinello M, Chemical Physics Letters 248, 309 (1996)
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Gypsum and other calcium-rich particles above the North Sea”. Hoornaert S, van Malderen H, Van Grieken R, Environmental science and technology 30, 1515 (1996). http://doi.org/10.1021/ES9504350
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High crystalline quality erbium silicide films on (100) silicon grown in high vacuum”. Kaltsas G, Travlos A, Nassiopoulos AG, Frangis N, van Landuyt J, Applied surface science 102, 151 (1996). http://doi.org/10.1016/0169-4332(96)00036-0
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How to interpret short-range order HREM images”. De Meulenaere P, Van Tendeloo G, van Landuyt J, (1996)
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HREM investigation of martensite precursor effects and stacking sequences in Ni-Mn-Ti alloys”. Schryvers D, Lahjouji DE, Slootmaekers B, Potapov PL, Scripta metallurgica et materialia 35, 1235 (1996). http://doi.org/10.1016/1359-6462(96)00271-0
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HREM of ceramic high Tc superconductors”. Van Tendeloo G, Krekels T, Journal of the European Ceramic Society 16, 367 (1996). http://doi.org/10.1016/0955-2219(95)00193-X
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HREM study of short-range order in Cu-Pd alloys”. Rodewald M, Rodewald K, De Meulenaere P, Van Tendeloo G, (1996)
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IDAS: a Windows based software package for cluster analysis”. Bondarenko I, Treiger B, Van Grieken R, van Espen P, Spectrochimica acta: part B : atomic spectroscopy 51, 441 (1996)
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Identification of individual aerosol particles containing Cr, Pb, and Zn above the North Sea”. van Malderen H, Hoornaert S, Van Grieken R, Environmental science and technology 30, 489 (1996). http://doi.org/10.1021/ES950205L
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Impurity band and magnetic-field-induced metal-insulator transition in a doped GaAs/AlxGa1-xAs superlattice”. Hilber W, Helm M, Peeters FM, Alavi K, Pathak RN, Physical review : B : condensed matter and materials physics 53, 6919 (1996). http://doi.org/10.1103/PhysRevB.53.6919
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Inclusions in magnetron sputtered YBa2Cu3-x MxO7-d thin films: a study by means of electron microscopy”. Verbist K, Van Tendeloo G, Ye M, Schroeder J, Mehbod M, Deltour R, Microscopy, microanalysis, microstructures 7, 17 (1996). http://doi.org/10.1051/mmm:1996104
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Interplay of 2D and 3D charge carriers in Si-δ-doped InSb layers grown epitaxially on GaAs”. de Keyser A, Bogaerts R, Karavolas VC, van Bockstal L, Herlach F, Peeters FM, van de Graaf W, Borghs G, Solid state electronics 40, 395 (1996). http://doi.org/10.1016/0038-1101(96)84617-X
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Intersubband-coupling and screening effects on the electron transport in a quasi-two-dimensional δ-doped semiconductor system”. Hai G-Q, Studart N, Peeters FM, Koenraad PM, Wolter JH, Journal of applied physics 80, 5809 (1996). http://doi.org/10.1063/1.363573
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Ion beam synthesis of \beta-SiC at 950 degrees C and structural characterization”. Frangis N, Nejim A, Hemment PLF, Stoemenos J, van Landuyt J, Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 –, Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing –, Fr 112, 325 (1996). http://doi.org/10.1016/0168-583X(95)01236-2
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