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“Exciton Fine Structure and Lattice Dynamics in InP/ZnSe Core/Shell Quantum Dots”. Brodu A, Ballottin MV, Buhot J, van Harten EJ, Dupont D, La Porta A, Prins PT, Tessier MD, Versteegh MAM, Zwiller V, Bals S, Hens Z, Rabouw FT, Christianen PCM, de Donega CM, Vanmaekelbergh D, ACS Photonics 5, 3353 (2018). http://doi.org/10.1021/ACSPHOTONICS.8B00615
Abstract: Nanocrystalline InP quantum dots (QDs) hold promise for heavy-metal-free optoelectronic applications due to their bright and size tunable emission in the visible range. Photochemical stability and high photoluminescence (PL) quantum yield are obtained by a diversity of epitaxial shells around the InP core. To understand and optimize the emission line shapes, the exciton fine structure of InP core/shell QD systems needs be investigated. Here, we study the exciton fine structure of InP/ZnSe core/shell QDs with core diameters ranging from 2.9 to 3.6 nm (PL peak from 2.3 to 1.95 eV at 4 K). PL decay measurements as a function of temperature in the 10 mK to 300 K range show that the lowest exciton fine structure state is a dark state, from which radiative recombination is assisted by coupling to confined acoustic phonons with energies ranging from 4 to 7 meV, depending on the core diameter. Circularly polarized fluorescence line-narrowing (FLN) spectroscopy at 4 K under high magnetic fields (up to 30 T) demonstrates that radiative recombination from the dark F = +/- 2 state involves acoustic and optical phonons, from both the InP core and the ZnSe shell. Our data indicate that the highest intensity FLN peak is an acoustic phonon replica rather than a zero-phonon line, implying that the energy separation observed between the F = +/- 1 state and the highest intensity peak in the FLN spectra (6 to 16 meV, depending on the InP core size) is larger than the splitting between the dark and bright fine structure exciton states.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 6.756
Times cited: 40
DOI: 10.1021/ACSPHOTONICS.8B00615
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“Interfacial oxidation and photoluminescence of InP-Based core/shell quantum dots”. Tessier MD, Baquero EA, Dupont D, Grigel V, Bladt E, Bals S, Coppel Y, Hens Z, Nayral C, Delpech F, Chemistry of materials 30, 6877 (2018). http://doi.org/10.1021/ACS.CHEMMATER.8B03117
Abstract: Indium phosphide colloidal quantum dots (QDs) are emerging as an efficient cadmium-free alternative for optoelectronic applications. Recently, syntheses based on easy-to-implement aminophosphine precursors have been developed. We show by solid-state nuclear magnetic resonance spectroscopy that this new approach allows oxide-free indium phosphide core or core/shell quantum dots to be made. Importantly, the oxide-free core/shell interface does not help in achieving higher luminescence efficiencies. We demonstrate that in the case of InP/ZnS and InP/ZnSe QDs, a more pronounced oxidation concurs with a higher photoluminescence efficiency. This study suggests that a II-VI shell on a III-V core generates an interface prone to defects. The most efficient InP/ZnS or InP/ZnSe QDs are therefore made with an oxide buffer layer between the core and the shell: it passivates these interface defects but also results in a somewhat broader emission line width.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 9.466
Times cited: 74
DOI: 10.1021/ACS.CHEMMATER.8B03117
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