Author |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Saniz, R.; Xu, Y.; Matsubara, M.; Amini, M.N.; Dixit, H.; Lamoen, D.; Partoens, B. |
A simplified approach to the band gap correction of defect formation energies : Al, Ga, and In-doped ZnO |
2013 |
The journal of physics and chemistry of solids |
74 |
36 |
UA library record; WoS full record; WoS citing articles |
Matsubara, M.; Amini, M.N.; Saniz, R.; Lamoen, D.; Partoens, B. |
Attracting shallow donors : hydrogen passivation in (Al,Ga,In)-doped ZnO |
2012 |
Physical review : B : condensed matter and materials physics |
86 |
7 |
UA library record; WoS full record; WoS citing articles |
Matsubara, M.; Saniz, R.; Partoens, B.; Lamoen, D. |
Doping anatase TiO2with group V-b and VI-b transition metal atoms: a hybrid functional first-principles study |
2017 |
Physical chemistry, chemical physics |
19 |
19 |
UA library record; WoS full record; WoS citing articles |
Massobrio, C.; Djimbi, D.M.; Matsubara, M.; Scipioni, R.; Boero, M. |
Stability of Ge12C48 and Ge20C40 heterofullerenes : a first principles molecular dynamics study |
2013 |
Chemical physics letters |
556 |
3 |
UA library record; WoS full record; WoS citing articles |
Scipioni, R.; Matsubara, M.; Ruiz, E.; Massobrio, C.; Boero, M. |
Thermal behavior of Si-doped fullerenes vs their structural stability at T = 0 K : a density functional study |
2011 |
Chemical physics letters |
510 |
14 |
UA library record; WoS full record; WoS citing articles |