Number of records found: 2
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Citations
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Defect characterization in high temperature implanted 6H-SiC using TEM”. Suvorov AV, Lebedev OI, Suvorova AA, van Landuyt J, Usov IO, Nuclear instruments and methods in physics research: B 127/128, 347 (1997). http://doi.org/10.1016/S0168-583X(96)00954-8
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HREM study of ion implantation in 6H-SiC at high temperatures”. Lebedev OI, Van Tendeloo G, Suvorova AA, Usov IO, Suvorov AV, Journal of electron microscopy 46, 271 (1997)
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