Records |
Author |
Abreu, Y.; Cruz, C.M.; van Espen, P.; Pérez, C.; Piñera, I.; Leyva, A.; Cabal, A.E. |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Electric field gradient calculations in ZnO samples implanted with 111In(111Cd) |
Type |
A1 Journal article |
Year |
2012 |
Publication |
Solid state communications |
Abbreviated Journal |
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Volume |
152 |
Issue |
5 |
Pages |
399-402 |
Keywords |
A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
Abstract |
A first-principles study of the electric field gradient (EFG) calculated for ideal and In-111(Cd-111) implanted ZnO samples is reported in the present work. The study was made for ZnO ideal hexagonal structures and supercells were introduced in order to consider the possible implantation environments. The calculation was done using the “WIEN2k” code within the density functional theory, the exchange and correlation effects were determined by the GGA approximation. Three possible In-111(Cd-111) implantation configurations were studied, one substitutional incorporation at cation site and two interstitials. The obtained EFG values for the ideal structure and the substitutional site are in good agreement with the experimental reports measured by perturbed angular correlation (PAC) and high precision nuclear magnetic resonance (NMR). Thus, the ascription of substitutional incorporation of In-111(Cd-111) probe atom at the ZnO cation site after annealing was confirmed. (C) 2011 Elsevier Ltd. All rights reserved. |
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Wos |
000301329200016 |
Publication Date |
2011-12-09 |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0038-1098 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
Call Number |
UA @ admin @ c:irua:97821 |
Serial |
7857 |
Permanent link to this record |
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Author |
Abreu, Y.; Cruz, C.M.; van Espen, P.; Piñera, I.; Leyva, A.; Cabal, A.E. |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Multiscale modeling of radiation damage and annealing in Si samples implanted with 57-Mn radioactive ions |
Type |
P1 Proceeding |
Year |
2011 |
Publication |
IEEE conference record
T2 – IEEE Nuclear Science Symposium/Medical Imaging Conference (NSS/MIC)/18th, International Workshop on Room-Temperature Semiconductor X-Ray and, Gamma-Ray Detectors, OCT 23-29, 2011, Valencia, SPAIN |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
1754-1756 |
Keywords |
P1 Proceeding; Engineering sciences. Technology; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
Abstract |
The radiation damage created in silicon materials by Mn-57 -> Fe-57 ion implantation has been studied and characterized by Mossbauer spectroscopy showing four main lines, assigned to: substitutional, interstitial and damaged configuration sites of the implanted ions. Nevertheless, the Mossbauer spectrum of Fe-57 in this materials remains with some ambiguous identification regarding the implantation configurations before and after annealing, specially the damaged configurations and its evolution. In the present work some possible implantation configurations are suggested and evaluated using a multiscale approach by Monte Carlo ion transport and electronic structure calculations within DFT. The proposed implantation environments were evaluated in terms of stability and the Fe-57 hyperfine parameters were calculated to establish the connections with the experimental observations. Good agreement was found between the experimental and the calculated hyperfine parameters for some configurations; suggesting which ones could be the implantation environments before and after sample annealing. |
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Wos |
000304755601202 |
Publication Date |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
978-1-4673-0120-6 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
Call Number |
UA @ admin @ c:irua:113073 |
Serial |
8289 |
Permanent link to this record |
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Author |
Piñera, I.; Abreu, Y.; van Espen, P.; Diaz, A.; Leyva, A.; Cruz, C.M. |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Radiation damage evaluation on LYSO and LuYAP materials through Dpa calculation assisted by Monte Carlo method |
Type |
P1 Proceeding |
Year |
2011 |
Publication |
IEEE conference record
T2 – IEEE Nuclear Science Symposium/Medical Imaging Conference (NSS/MIC)/18th, International Workshop on Room-Temperature Semiconductor X-Ray and, Gamma-Ray Detectors, OCT 23-29, 2011, Valencia, SPAIN |
Abbreviated Journal |
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Volume |
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Issue |
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Pages |
1609-1611 |
Keywords |
P1 Proceeding; Engineering sciences. Technology; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
Abstract |
The aim of the present work is to study the radiation damage induced in LYSO and LuYAP crystals by the gamma radiation and the secondary electrons/positrons generated. The displacements per atom (dpa) distributions inside each material were calculated following the Monte Carlo assisted Classical Method (MCCM) introduced by the authors. As gamma sources were used Sc-44, Na-22 and V-48. Also the energy of gammas from the annihilation processes (511 keV) was included in the study. This procedure allowed studying the in-depth dpa distributions inside each crystal for all four sources. It was also possible to obtain the separate contribution from each atom to the total dpa. The LYSO crystals were found to receive more damage, mainly provoked by the displacements of silicon and oxygen atoms. |
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Wos |
000304755601169 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
978-1-4673-0120-6 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
Call Number |
UA @ admin @ c:irua:113072 |
Serial |
8447 |
Permanent link to this record |
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Author |
Piñera, I.; Cruz, C.M.; van Espen, P.; Abreu, Y.; Leyva, A. |
Title ![sorted by Title field, ascending order (up)](img/sort_asc.gif) |
Study of dpa distributions in electron irradiated YBCO slabs through MCCM algorithm |
Type |
A1 Journal article |
Year |
2012 |
Publication |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms |
Abbreviated Journal |
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Volume |
274 |
Issue |
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Pages |
191-194 |
Keywords |
A1 Journal article; Engineering sciences. Technology; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation) |
Abstract |
The Monte Carlo assisted Classical Method (MCCM) consists on a calculation procedure for determining the displacements per atom (dpa) distribution in solid materials. This algorithm allows studying the gamma and electron irradiation damage in different materials. It is based on the electrons elastic scattering classic theories and the use of Monte Carlo simulation for the physical processes involved. The present study deals with the Monte Carlo simulation of electron irradiation effects on YBa2Cu3O7-x (YBCO) slabs using the MCNPX code system. Displacements per atom distributions are obtained through the MCCM for electron irradiation up to 10 MeV. In-depth dpa profiles for electrons and positrons are obtained and analysed. Also, dpa contributions from each atomic specie in the material are calculated. It was found that the dpa distribution is more homogeneous in the material volume when increasing energy of incident electrons. Also, the dpa produced by positrons has no relevance when irradiating with electrons, in contrast with previous similar gamma irradiation studies. All the results are presented and discussed in this contribution. (C) 2011 Elsevier B.V. All rights reserved. |
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Wos |
000301611900031 |
Publication Date |
2011-12-05 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-583x |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
Call Number |
UA @ admin @ c:irua:97819 |
Serial |
8595 |
Permanent link to this record |