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Numerical investigation of SiO2 coating deposition in wafer processing reactors with SiCl4/O2/Ar inductively coupled plasmas”. Tinck S, De Schepper P, Bogaerts A, Plasma processes and polymers 10, 714 (2013). http://doi.org/10.1002/ppap.201300005
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Special Issue on Numerical Modelling of Low-Temperature Plasmas for Various Applications –, Part I: Review and Tutorial Papers on Numerical Modelling Approaches”. Alves LL, Bogaerts A, Plasma processes and polymers 14, 1690011 (2017). http://doi.org/10.1002/ppap.201690011
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Particle-in-cell/Monte Carlo collisions model for the reactive sputter deposition of nitride layers”. Bultinck E, Mahieu S, Depla D, Bogaerts A, Plasma processes and polymers 6, S784 (2009). http://doi.org/10.1002/ppap.200931904
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Special issue on numerical modelling of low-temperature plasmas for various applications –, part II: Research papers on numerical modelling for various plasma applications”. Bogaerts A, Alves LL, Plasma processes and polymers 14, 1790041 (2017). http://doi.org/10.1002/ppap.201790041
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Effect of electric fields on plasma catalytic hydrocarbon oxidation from atomistic simulations”. Neyts EC, Bal KM, Plasma processes and polymers 14, e1600158 (2017). http://doi.org/10.1002/PPAP.201600158
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Formation of a nanoscale SiO2 capping layer on photoresist lines with an Ar/SiCl4/O2 inductively coupled plasma : a modeling investigation”. Tinck S, Altamirano-Sánchez E, De Schepper P, Bogaerts A, Plasma processes and polymers 11, 52 (2014). http://doi.org/10.1002/ppap.201300062
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Numerical modeling for a better understanding of gas discharge plasmas”. Bogaerts A, de Bleecker K, Georgieva V, Herrebout D, Kolev I, Madani M, Neyts E, High temperature material processes 9, 321 (2005). http://doi.org/10.1615/HighTempMatProc.v9.i3.10
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Plasma processes and polymers third special issue on plasma and cancer”. Laroussi M, Bogaerts A, Barekzi N, Plasma processes and polymers 13, 1142 (2016). http://doi.org/10.1002/ppap.201600193
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Pressure as an additional control handle for non-thermal atmospheric plasma processes”. Belov I, Paulussen S, Bogaerts A, Plasma processes and polymers 14, 1700046 (2017). http://doi.org/10.1002/ppap.201700046
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Atomic structure of alloys close to phase transitions”. Van Tendeloo G, Schryvers D, Nucleation and growth processes in materials 580, 283 (2000)
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Magnetoexcitons in type-II self-assembled quantum dots and quantum-dot superlattices”. Veljkovic D, Tadić, M, Peeters FM, Recent developments in advanced materials and processes 518, 51 (2006)
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Modeling of the synthesis and subsequent growth of nanoparticles in dusty plasmas”. de Bleecker K, Bogaerts A, High temperature material processes 11, 21 (2007). http://doi.org/10.1615/HighTempMatProc.v11.i1.20
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Modeling PECVD growth of nanostructured carbon materials”. Neyts E, Bogaerts A, van de Sanden MCM, High temperature material processes 13, 399 (2009). http://doi.org/10.1615/HighTempMatProc.v13.i3-4.120
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Modeling and tackling resistivity scaling in metal nanowires”. Moors K, Sorée B, Magnus W, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC , 222 (2015)
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Special issue: Plasma Conversion”. Nozaki T, Bogaerts A, Tu X, Sanden R, Plasma processes and polymers 14, 1790061 (2017). http://doi.org/10.1002/ppap.201790061
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Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF6/O2plasmas”. Tinck S, Tillocher T, Georgieva V, Dussart R, Neyts E, Bogaerts A, Plasma processes and polymers 14, 1700018 (2017). http://doi.org/10.1002/ppap.201700018
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Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors”. Verreck D, Verhulst AS, Van de Put ML, Sorée B, Magnus W, Collaert N, Mocuta A, Groeseneken G, Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017) , 29 (2017)
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Ceramide cross-linking leads to pore formation: Potential mechanism behind CAP enhancement of transdermal drug delivery”. Van der Paal J, Fridman G, Bogaerts A, Plasma processes and polymers 16, 1900122 (2019). http://doi.org/10.1002/PPAP.201900122
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The penetration of reactive oxygen and nitrogen species across the stratum corneum”. Duan J, Ma M, Yusupov M, Cordeiro RM, Lu X, Bogaerts A, Plasma Processes And Polymers (2020). http://doi.org/10.1002/ppap.202000005
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The impact of local hydrodynamics on high-rate activated sludge flocculation in laboratory and full-scale reactors”. Balemans S, Vlaeminck SE, Torfs E, Hartog L, Zaharova L, Rehman U, Nopens I, Processes 8, 131 (2020). http://doi.org/10.3390/PR8020131
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Positive and negative streamer propagation in volume dielectric barrier discharges with planar and porous electrodes”. Zhang Q‐Z, Zhang L, Yang D‐Z, Schulze J, Wang Y‐N, Bogaerts A, Plasma Processes And Polymers 18, 2000234 (2021). http://doi.org/10.1002/ppap.202000234
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Molecular understanding of the possible mechanisms of oligosaccharide oxidation by cold plasma”. Yusupov M, Dewaele D, Attri P, Khalilov U, Sobott F, Bogaerts A, Plasma processes and polymers (2022). http://doi.org/10.1002/ppap.202200137
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Plasma‐treated liquids in medicine: Let's get chemical”. Tampieri F, Gorbanev Y, Sardella E, Plasma Processes and Polymers 20, e2300077 (2023). http://doi.org/10.1002/ppap.202300077
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Modelling the dynamics of hydrogen synthesis from methane in nanosecond‐pulsed plasmas”. Morais E, Bogaerts A, Plasma processes and polymers 21 (2024). http://doi.org/10.1002/ppap.202300149
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Toward defining plasma treatment dose : the role of plasma treatment energy of pulsed‐dielectric barrier discharge in dictating in vitro biological responses”. Lin A, Biscop E, Gorbanev Y, Smits E, Bogaerts A, Plasma Processes And Polymers 19, e2100151 (2022). http://doi.org/10.1002/PPAP.202100151
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Ab initio modeling of few-layer dilute magnetic semiconductors”. Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2021, Dallas, TX , 141 (2021). http://doi.org/10.1109/SISPAD54002.2021.9592535
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Ab-initio study of magnetically intercalated Tungsten diselenide”. Reyntjens PD, Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 23-OCT 06, 2020 , 97 (2020). http://doi.org/10.23919/SISPAD49475.2020.9241592
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Carrier transport in a two-dimensional topological insulator nanoribbon in the presence of vacancy defects”. Tiwari S, Van de Put ML, Sorée B, Vandenberghe WG, International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 –, International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 24-26, 2018, Austin, TX , 92 (2018). http://doi.org/10.1109/SISPAD.2018.8551720
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Characterization of colloidal and particulate matter transported by the Magela Creek system, Northern Australia”. Hart BT, Douglas GB, Beckett R, van Put A, Van Grieken R, Hydrological processes 7, 105 (1993)
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Do ICP-MS based methods fulfill the EU monitoring requirements for the determination of elements in our environment?”.Tirez K, Vanhoof C, Bronders J, Seuntjens P, Bleux N, Berghmans P, De Brucker N, Vanhaecke F, Environmental science : processes &, impacts 17, 2034 (2015). http://doi.org/10.1039/C5EM00289C
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