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“HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited)”. Schryvers D, Van Tendeloo G, van Landuyt J, Le Tanner, , 659 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“HREM study of Rb6C60 and helical shaped carbon nanotubules”. Bernaerts D, Zhang X, Zhang X, Van Tendeloo G, Vanlanduyt J, Amelinckx S, Sciences , 305 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Laser ionization mass-spectrometry for the characterization of solid materials”. van Vaeck L, Vanroy W, Gijbels R, Analusis : chimie analytique, méthodes physiques d'analyse, composition de la matière 20, S29 (1992)
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Mécanismes de la non-stoechiométrie dans les nouveaux supraconducteurs à, haute Tc”. Hervieu M, Michel C, Martin C, Huvé, M, Van Tendeloo G, Maignan A, Pelloquin D, Goutenoire F, Raveau B, Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation 4, 2057 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Micro and surface analysis of individual silver halide microcrystals using a scanning ion microprobe”. Geuens I, Gijbels R, Dekeyzer R, Verbeeck A, Papers , 27 (1994)
Keywords: P1 Proceeding; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Molecular structure, crystal field and orientational order in solid C60”. Lamoen D, Michel KH s.l., page 183 (1994).
Keywords: H1 Book chapter; Condensed Matter Theory (CMT)
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“Nucleation and growth of bainitic Ni5Al3 in B2 austenite and 3R martensite”. Schryvers D, Ma Y, Toth L, Tanner LE, Solid-solid state phase transformations , 929 (1994)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Nucleation and growth of Ni5Al3 in austenite and martensite matrices”. Schryvers D, Ma Y, Toth L, Tanner LE, Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences , 509 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“On the quasi-random entropy of linear species”. Slanina Z, Martin JML, François JP, Gijbels R, Theochem: applications of theoretical chemistry to organic, inorganic and biological problems 99, 83 (1993)
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
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“Ordering and defects in BanTaxTiyO3n ternary oxides”. Nistor L, Van Tendeloo G, Amelinckx S, Shpanchenko RV, van Landuyt J, Electron Microscopy 1994, Vols 2a And 2b: Applications In Materials Sciences , 869 (1994)
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
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“Polaron cyclotron resonance spectrum with interface optical phonon modes in GaAs/AlAs quantum wells”. Hai GQ, Peeters FM, Devreese JT Kluwer, Dordrecht, page 243 (1993).
Keywords: H3 Book chapter; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
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“Structural aspects of the combination of Si and YBa2Cu3O7-x”. Vasiliev AL, Van Tendeloo G, Boikov Y, Olsson E, Ivanov Z, Claeson T, Kiselev NA, Institute of physics conference series 146, 333 (1995)
Abstract: The microstructure of defects and interfaces as well as interfacial reactions of the YBa2Cu3O7-x (YBCO) thin films on Si or Si on sapphire with single Y-stabilized ZrO2 (YSZ), double CeO2/YSZ or triple MgO/CeO2/YSZ buffer layer has been characterized by transmission electron microscopy The complex buffer made it possible to prevent detrimental interdiffusion and to control the orientation of YBCO layers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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“Structural description of high Tc cuprate superconductors”. Milat O, Van Tendeloo G, Amelinckx S, Spie 2697, 95 (1996). http://doi.org/10.1117/12.250232
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
DOI: 10.1117/12.250232
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“Structural instabilities associated with phase transitions: an electron microscopy study”. Van Tendeloo G, Schryvers D, Tanner LE, , 107 (1992)
Keywords: P3 Proceeding; Electron microscopy for materials research (EMAT)
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“Study of quasi-fractal many-particle-systems and percolation networks by zero-loss spectroscopic imaging, electron energy-loss spectroscopy and digital image analysis”. Oleshko V, Kindratenko V, Gijbels R, van Espen P, Jacob W, Mikrochimica acta: supplementum 13, 443 (1996)
Abstract: Submicron colloidal Ag particles and nano-sized filaments forming a statistical percolation network during ''in situ'' development of double structure tabular microcrystals of AgRr(I) emulsions have been studied by electron energy-loss spectroscopy and zero-loss electron spectroscopic imaging (EELS/ZLESI). Image analysis has shown that random quasi-fractal clusters were formed in the colloid. ZLESI has been applied to characterise the morphology and defect structure of aggregated particles and filaments. Their energy-loss spectra revealed plasmon excitations and interband 4d electron transitions between 4-32 eV energy-loss. To study the cluster structure and its relation to the physical properties, fractal analysis including estimations of cluster fractal dimensions and of density autocorrelation functions has been performed. Mechanisms of fractal aggregation based on known models of diffusion limited aggregation, cluster-cluster aggregation and percolation are discussed.
Keywords: A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); Chemometrics (Mitac 3)
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“TEM characterization of structural defects”. Van Tendeloo G Plenum Press, New York, page 473 (1996).
Keywords: H1 Book chapter; Electron microscopy for materials research (EMAT)
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“Towards quantitative high resolution electron microscopy?”.Van Tendeloo G, op de Beeck M, De Meulenaere P, van Dyck D, Institute of physics conference series 147, 67 (1995)
Abstract: The basics of the interpretation of high resolution images showing detail of the order of 0.1 nm are shortly explained here. The use of a field emission source, a CCD camera and an adapted reconstruction method for restoring the projected crystal potential (focus variation method) allows a quantitative interpretation of HREM images. Examples of partially disordered alloys and carbonate ordering in high Tc superconductors are presented.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab
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“Tuning of energy levels in a superlattice”. Peeters FM, Materials Research Society symposium proceedings 325, 471 (1994)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Electron relaxation times and resistivity in metallic nanowires due to tilted grain boundary planes”. Moors K, Soree B, Tokei Z, Magnus W, On Ultimate Integration On Silicon (eurosoi-ulis) , 201 (2015)
Abstract: We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzmann transport equation and Fermi's golden rule, retrieving correct state-dependent relaxation times. The standard approximation schemes for the relaxation times are shown to fail when grain boundary tilt is considered. Grain boundaries tilted under the same angle or randomly tilted induce a resistivity decrease.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Luminescence of fixed site Ag nanoclusters in a simple oxyfluoride glass host and plasmon absorption of amorphous Ag nanoparticles in a complex oxyfluoride glass host”. Shestakov MV, Meledina M, Turner S, Baekelant W, Verellen N, Chen X, Hofkens J, Van Tendeloo G, Moshchalkov VV, Proceedings of the Society of Photo-optical Instrumentation Engineers
T2 –, 8th International Conference on Photonics, Devices, and System VI, AUG 27-29, 2014, Prague, CZECH REPUBLIC , Unsp 94501n (2015). http://doi.org/10.1117/12.2068198
Abstract: Ag nanocluster-doped glasses have been prepared by a conventional melt-quenching method. The effect of melt temperature and dwell time on the formation of Ag nanoclusters and Ag nanoparticles in simple host oxyfluoride glasses has been studied. The increase of melt temperature and dwell time results in the dissolution of Ag nanoparticles and substantial red-shift of absorption and photoluminescence spectra of the prepared glasses. The quantum yield of the glasses is similar to 5% and does not depend on melt temperature and dwell time. The prepared glasses may be used as red phosphors or down-conversion layers for solar-cells.
Keywords: P1 Proceeding; Electron microscopy for materials research (EMAT)
DOI: 10.1117/12.2068198
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“Perspective of tunnel-FET for future low-power technology nodes”. Verhulst AS, Verreck D, Smets Q, Kao K-H, Van de Put M, Rooyackers R, Sorée B, Vandooren A, De Meyer K, Groeseneken G, Heyns MM, Mocuta A, Collaert N, Thean AV-Y, 2014 Ieee International Electron Devices Meeting (iedm) (2014)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Resistivity scaling model for metals with conduction band anisotropy”. De Clercq M, Moors K, Sankaran K, Pourtois G, Dutta S, Adelmann C, Magnus W, Sorée B, Physical review materials 2, 033801 (2018). http://doi.org/10.1103/PHYSREVMATERIALS.2.033801
Abstract: It is generally understood that the resistivity of metal thin films scales with film thickness mainly due to grain boundary and boundary surface scattering. Recently, several experiments and ab initio simulations have demonstrated the impact of crystal orientation on resistivity scaling. The crystal orientation cannot be captured by the commonly used resistivity scaling models and a qualitative understanding of its impact is currently lacking. In this work, we derive a resistivity scaling model that captures grain boundary and boundary surface scattering as well as the anisotropy of the band structure. The model is applied to Cu and Ru thin films, whose conduction bands are (quasi-) isotropic and anisotropic, respectively. After calibrating the anisotropy with ab initio simulations, the resistivity scaling models are compared to experimental resistivity data and a renormalization of the fitted grain boundary reflection coefficient can be identified for textured Ru.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
DOI: 10.1103/PHYSREVMATERIALS.2.033801
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“Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures”. Loo R, Arimura H, Cott D, Witters L, Pourtois G, Schulze A, Douhard B, Vanherle W, Eneman G, Richard O, Favia P, Mitard J, Mocuta D, Langer R, Collaert N, Semiconductor Process Integration 10 , 241 (2017). http://doi.org/10.1149/08004.0241ECST
Abstract: Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees C. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during the Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions.
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1149/08004.0241ECST
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“Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors”. Verreck D, Verhulst AS, Van de Put ML, Sorée B, Magnus W, Collaert N, Mocuta A, Groeseneken G, Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017) , 29 (2017)
Abstract: Heterostructures of III-V materials under a mechanical strain are being actively researched to enhance the performance of the tunnel field-effect transistor (TFET). In scaled III-V device structures, however, the interplay between the effects of strain and quantum confinement on the semiconductor band structure and hence the performance is highly non-trivial. We have therefore developed a computationally efficient quantum mechanical simulator Pharos, which enables self-consistent full-zone k.p-based simulations of III-V TFETs under a general non-uniform strain. We present the self-consistent procedure and demonstrate it on confined staggered bandgap GaAs0.5Sb0.5/In0.53Ga0.47As TFETs. We find a large performance degradation due to size-induced quantum confinement compared to non-confined devices. We show that some performance can be regained either by applying a uniform biaxial tensile strain or through the non-uniform strain profile at a lattice-mismatched heterostructure.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs”. Bizindavyi J, Verhulst AS, Sorée B, Groeseneken G, Conference digest
T2 –, 76th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA (2018)
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs”. Bizindavyi J, Verhulst AS, Sorée B, Groeseneken G, Conference digest
T2 –, 76th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA (2018). http://doi.org/10.1109/DRC.2018.8442246
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
DOI: 10.1109/DRC.2018.8442246
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“Machine Learning for Fast Characterization of Magnetic Logic Devices”. Kaintura A, Foss K, Couckuyt I, Dhaene T, Zografos O, Vaysset A, Sorée B, (edaps 2018) (2018)
Abstract: Non-charge-based logic devices are promising candidates for future logic circuits. Interest in studying and developing these devices has grown dramatically in the past decade as they possess key advantages over conventional CMOS technology. Due to their novel designs, a large number of micromagnetic simulations are required to fully characterize the behavior of these devices. The number and complexity of these simulations place large computational requirements on device development. We use state-of-the-art machine learning techniques to expedite identification of their behavior. Several intelligent sampling strategies are combined with machine learning multi-class classification models. These techniques are applied to a recently developed exchange-driven magnetic logic scheme that utilizes direct exchange coupling as the main driver.
Keywords: P1 Proceeding; Condensed Matter Theory (CMT)
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“A 2D model of a gliding arc discharge for CO2conversion”. Paunska T, Trenchev G, Bogaerts A, Kolev S, AIP conference proceedings
T2 –, 10th Jubilee Conference of the Balkan-Physical-Union (BPU), AUG 26-30, 2018, Sofia, BULGARIA (2019). http://doi.org/10.1063/1.5091186
Abstract: The study presents a 2D fluid plasma model of a gliding arc discharge for dissociation of CO2 which allows its subsequent conversion into value-added chemicals. The model is based on the balance equations of charged and neutral particles, the electron energy balance equation, the gas thermal balance equation and the current continuity equation. By choosing the modeling domain to be the plane perpendicular to the arc current, the numerical calculations are significantly simplified. Thus, the model allows us to explore the influence of the gas instabilities (turbulences) on the energy efficiency of CO2 conversion. This paper presents results for plasma parameters at different values of the effective turbulent thermal conductivity leading to enhanced energy transport.
Keywords: P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1063/1.5091186
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“Getting rid of anti-solvents: gas quenching for high performance perovskite solar cells”. Conings B, Babayigit A, Klug M, Bai S, Gauquelin N, Sakai N, Wang JT-W, Verbeeck J, Boyen H-G, Snaith H, 2018 Ieee 7th World Conference On Photovoltaic Energy Conversion (wcpec)(a Joint Conference Of 45th Ieee Pvsc, 28th Pvsec &, 34th Eu Pvsec) (2018). http://doi.org/10.1109/PVSC.2018.8547987
Abstract: As the field of perovskite optoelectronics developed, a plethora of strategies has arisen to control their electronic and morphological characteristics for the purpose of producing high efficiency devices. Unfortunately, despite this wealth of deposition approaches, the community experiences a great deal of irreproducibility between different laboratories, batches and preparation methods. Aiming to address this issue, we developed a simple deposition method based on gas quenching that yields smooth films for a wide range of perovskite compositions, in single, double, triple and quadruple cation varieties, and produces planar heterojunction devices with competitive efficiencies, so far up to 20%.
Keywords: P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
DOI: 10.1109/PVSC.2018.8547987
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“All crystal clear : 18th-century glass à, la façon de Bohème from the cistercian nunnery of Clairefontaine, Belgium”. Herremans D, Cagno S, Vincke A, Janssens K, De Clercq W, Journal of glass studies 55, 137 (2013)
Abstract: Excavations at the Cistercian nunnery of Clairefontaine, located near Arlon in the south of Belgium, revealed an assemblage of 18th-century colorless glass. The morphology of the vessels and the engraved decoration suggest a central European origin or, at least, stylistic inspiration. The composition of the glass points to a recipe combining silica, lime, and potash: a colorless potash glass a la facon de Boheme. This article considers the technology, morphology, and origin of the vessels. The art-historical analysis is supported by chemical research (scanning electron microscopy energy-dispersive X-ray spectroscopy [SEM-EDX]). The finds are also discussed in light of the emerging northwestern European glass industry, changing consumer practices during the 18th century, and their meaning for the inhabitants of the abbey.
Keywords: A1 Journal article; Art; History; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation)
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