Records |
Author |
Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
Title |
Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas |
Type |
A1 Journal article |
Year |
1997 |
Publication |
Journal of crystal growth |
Abbreviated Journal |
J Cryst Growth |
Volume |
173 |
Issue |
|
Pages |
285-296 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
|
Address |
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Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1997XC98100008 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-0248 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.751 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.751; 1997 IF: 1.259 |
Call Number |
UA @ lucian @ c:irua:20459 |
Serial |
324 |
Permanent link to this record |
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|
|
Author |
Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. |
Title |
A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals |
Type |
A1 Journal article |
Year |
1996 |
Publication |
The journal of imaging science and technology |
Abbreviated Journal |
J Imaging Sci Techn |
Volume |
40 |
Issue |
|
Pages |
189-201 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Springfield, Va |
Editor |
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Language |
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Wos |
A1996VL09200003 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1062-3701 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
0.349 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 135/271 Q2 # PHYSICS, APPLIED 70/145 Q2 # PHYSICS, CONDENSED MATTER 40/67 Q3 # |
Call Number |
UA @ lucian @ c:irua:15428 |
Serial |
418 |
Permanent link to this record |
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|
|
Author |
Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K. |
Title |
Defects in high-dose oxygen implanted silicon : a TEM study |
Type |
A1 Journal article |
Year |
1991 |
Publication |
Vacuum: the international journal and abstracting service for vacuum science and technology
T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND |
Abbreviated Journal |
Vacuum |
Volume |
42 |
Issue |
5-6 |
Pages |
367-369 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Oxford |
Editor |
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Language |
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Wos |
A1991EV61700007 |
Publication Date |
2002-10-19 |
Series Editor |
|
Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0042-207X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.858 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 # |
Call Number |
UA @ lucian @ c:irua:104022 |
Serial |
629 |
Permanent link to this record |
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|
|
Author |
Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
Title |
In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates |
Type |
A1 Journal article |
Year |
2001 |
Publication |
Journal of materials research |
Abbreviated Journal |
J Mater Res |
Volume |
16 |
Issue |
3 |
Pages |
701-708 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000167407200011 |
Publication Date |
2008-03-06 |
Series Editor |
|
Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0884-2914;2044-5326; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.673 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.673; 2001 IF: 1.539 |
Call Number |
UA @ lucian @ c:irua:103926 |
Serial |
1588 |
Permanent link to this record |
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|
|
Author |
van Landuyt, J.; van Bockstael, M.H.G.; van Royen, J. |
Title |
Microscopy of gemmological materials |
Type |
H3 Book chapter |
Year |
1997 |
Publication |
|
Abbreviated Journal |
|
Volume |
|
Issue |
|
Pages |
293-320 |
Keywords |
H3 Book chapter; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
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Corporate Author |
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Thesis |
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Publisher |
Vch |
Place of Publication |
Weinheim |
Editor |
|
Language |
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Wos |
A1995BC72X00044 |
Publication Date |
0000-00-00 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:21419 |
Serial |
2037 |
Permanent link to this record |
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|
|
Author |
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A.L. |
Title |
Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope |
Type |
A1 Journal article |
Year |
1996 |
Publication |
Nuclear instruments and methods in physics research |
Abbreviated Journal |
Nucl Instrum Meth B |
Volume |
B112 |
Issue |
|
Pages |
133-138 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
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Wos |
A1996UW20100029 |
Publication Date |
2002-07-26 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.124 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:15453 |
Serial |
2423 |
Permanent link to this record |
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|
|
Author |
Zhang, Z.; Ma, L.N.; Liao, X.Z.; van Landuyt, J. |
Title |
A transmission electron-microscopy study of crystalline surface domains on al-co decagonal quasi-crystals and the \tau2-Al13CO4 approximant |
Type |
A1 Journal article |
Year |
1994 |
Publication |
Philosophical magazine letters |
Abbreviated Journal |
Phil Mag Lett |
Volume |
70 |
Issue |
5 |
Pages |
303-310 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Twin-domains of a b.c.c. crystalline phase with a = 0.29 nm have been found in a surface layer on surfaces of Al-Co decagonal quasicrystals and the coexisting tau(2)-Al13Co4 crystalline approximant. These surface layer domains are introduced during the preparation of electron microscopy thin films by ion milling. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1994PQ20900008 |
Publication Date |
2007-07-08 |
Series Editor |
|
Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0950-0839;1362-3036; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.087 |
Times cited |
4 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:99816 |
Serial |
3715 |
Permanent link to this record |
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|
|
Author |
de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. |
Title |
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM |
Type |
A1 Journal article |
Year |
2001 |
Publication |
Physica: B : condensed matter
T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY |
Abbreviated Journal |
Physica B |
Volume |
308 |
Issue |
|
Pages |
294-297 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier science bv |
Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
000173660100073 |
Publication Date |
2002-10-15 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0921-4526; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.386 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 1.386; 2001 IF: 0.663 |
Call Number |
UA @ lucian @ c:irua:103389 |
Serial |
345 |
Permanent link to this record |
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|
|
Author |
Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Pervov, V.S.; Makhonina, E.V. |
Title |
Electron microscopic and X-ray structural analysis of the layered crystals TaReSe4: structure, defect structure, and microstructure, including rotation twins |
Type |
A1 Journal article |
Year |
1998 |
Publication |
Journal of solid state chemistry |
Abbreviated Journal |
J Solid State Chem |
Volume |
135 |
Issue |
|
Pages |
235-255 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
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Corporate Author |
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Thesis |
|
Publisher |
|
Place of Publication |
London |
Editor |
|
Language |
|
Wos |
000072900200008 |
Publication Date |
2002-10-07 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-4596; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.299 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.299; 1998 IF: 1.432 |
Call Number |
UA @ lucian @ c:irua:29672 |
Serial |
938 |
Permanent link to this record |
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|
|
Author |
Luyten, W.; Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Férauge, C.; Gijbels, R.; Vasilev, M.G.; Shelyakin, A.A.; Lazarev, V.B. |
Title |
Electron microscopy and mass-spectrometry study of In0.72Ga0.28As0.62P0.38 lasers grown by liquid phase epitaxy |
Type |
A1 Journal article |
Year |
1993 |
Publication |
Physica status solidi: A: applied research |
Abbreviated Journal |
|
Volume |
140 |
Issue |
2 |
Pages |
453-462 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
Broad area as well as buried heterostructure lasers based on In0.72Ga0.28As0.62P0.38/InP and emitting at 1.3 mum are grown by liquid phase epitaxy and are studied in detail by means of transmission electron microscopy, X-ray diffraction, secondary ion mass-spectrometry, and electroluminescence. The InGaAsP epilayer is found to be well lattice-matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in the InGaAsP alloy. We also report on the high performance characteristics of the infrared lasers. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Berlin |
Editor |
|
Language |
|
Wos |
A1993MP79700015 |
Publication Date |
2007-01-12 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0031-8965;1521-396X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
|
Call Number |
UA @ lucian @ c:irua:6156 |
Serial |
946 |
Permanent link to this record |
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|
|
Author |
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J. |
Title |
High resolution TEM observation of in situ colloid formation in CaF2 crystals |
Type |
A1 Journal article |
Year |
1997 |
Publication |
Materials science forum |
Abbreviated Journal |
|
Volume |
239-241 |
Issue |
|
Pages |
671-674 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
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Corporate Author |
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Thesis |
|
Publisher |
|
Place of Publication |
Lausanne |
Editor |
|
Language |
|
Wos |
A1997BH33W00145 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0255-5476; 1662-9752 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:21404 |
Serial |
1460 |
Permanent link to this record |
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|
|
Author |
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
Title |
Interaction of a Ti-capped Co thin film with Si3N4 |
Type |
A1 Journal article |
Year |
2000 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
Volume |
77 |
Issue |
26 |
Pages |
4307-4309 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7]. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000166120500021 |
Publication Date |
2002-07-26 |
Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0003-6951; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
3.411 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 3.411; 2000 IF: 3.906 |
Call Number |
UA @ lucian @ c:irua:104225 |
Serial |
1683 |
Permanent link to this record |
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|
|
Author |
Volkov, V.V.; van Landuyt, J.; Marushkin, K.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. |
Title |
LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas |
Type |
A1 Journal article |
Year |
1997 |
Publication |
Sensors and actuators : A : physical |
Abbreviated Journal |
Sensor Actuat A-Phys |
Volume |
62 |
Issue |
1/3 |
Pages |
624-632 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
Highly effective IR light-emitting diodes operating at the wavelength 1.66 mu m and based on the buried heterostructure In0.88Ga0.12As0.26P0.74/ In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP have been grown by liquid-phase epitaxy (LPE) and characterized in detail by means of transmission electron microscopy (TEM), high-resolution electron microscopy (HREM),electron diffraction (ED), X-ray diffraction (XRD), secondary-ion mass spectrometry (SIMS) and electroluminescence measurements. The InGaAsP epilayers are found to be well lattice matched and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective CK, gas sensor has been developed and fabricated an the basis of the IR light-emitting diode mentioned above. Especially designed for the remote control of CH4 gas via fibre optics, an integrated optoelectronic readout scheme has been developed and tested, It is shown that the proposed type of sensor can be used for the quantitative remote control of CH4 gas concentration (0.2-100%) via a fibre glass line up to a distance of 2 x 1 km. (C) 1997 Elsevier Science S.A. |
Address |
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Corporate Author |
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Thesis |
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Publisher |
|
Place of Publication |
Lausanne |
Editor |
|
Language |
|
Wos |
A1997YD90600029 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0924-4247; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.499 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.499; 1997 IF: 0.635 |
Call Number |
UA @ lucian @ c:irua:20455 |
Serial |
1855 |
Permanent link to this record |
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|
|
Author |
Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K. |
Title |
Microstructure of Mn-doped, spin-cast FeSi2 |
Type |
A1 Journal article |
Year |
1997 |
Publication |
Journal of electron microscopy |
Abbreviated Journal |
Microscopy-Jpn |
Volume |
46 |
Issue |
3 |
Pages |
221-225 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
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Corporate Author |
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Thesis |
|
Publisher |
|
Place of Publication |
Tokyo |
Editor |
|
Language |
|
Wos |
A1997XP43400004 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-0744; 1477-9986 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
0.9 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:21410 |
Serial |
2070 |
Permanent link to this record |
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|
|
Author |
Ignatova, V.A.; Lebedev, O.I.; Wätjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. |
Title |
Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation |
Type |
A1 Journal article |
Year |
2002 |
Publication |
Microchimica acta |
Abbreviated Journal |
Microchim Acta |
Volume |
139 |
Issue |
|
Pages |
77-81 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Wien |
Editor |
|
Language |
|
Wos |
000175560300012 |
Publication Date |
2003-03-05 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0026-3672;1436-5073; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
4.58 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 4.58; 2002 IF: NA |
Call Number |
UA @ lucian @ c:irua:38378 |
Serial |
2420 |
Permanent link to this record |
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|
Author |
Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O. |
Title |
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon |
Type |
A1 Journal article |
Year |
2002 |
Publication |
Journal of physics : condensed matter
T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY |
Abbreviated Journal |
J Phys-Condens Mat |
Volume |
14 |
Issue |
48 |
Pages |
13185-13193 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Results are presented on the photoluminescence (PL) characterization of heavily doped p(+) Czochralski silicon, which has been subjected to a two-step, oxygen precipitation heat treatment. It will be shown that the presence of oxygen precipitates gives rise to the D1, D2 and D5 lines, where the energy of the D1 line shifts to lower values for a stronger degree of precipitation. The occurrence of these PL features is also a function of the boron concentration in the p(+) material. The PL results are compared with Fourier transform infrared absorption data and with transmission electron microscope, results. From this, it is concluded that PL has a good potential for use in the assessment of oxygen precipitation in heavily doped silicon. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
London |
Editor |
|
Language |
|
Wos |
000180091100068 |
Publication Date |
2002-11-23 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0953-8984; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.649 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.649; 2002 IF: 1.775 |
Call Number |
UA @ lucian @ c:irua:103326 |
Serial |
2477 |
Permanent link to this record |
|
|
|
Author |
Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. |
Title |
Photoelectric and electrical responses of several erbium silicide/silicon interfaces |
Type |
A1 Journal article |
Year |
1996 |
Publication |
Applied surface science
T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE |
Abbreviated Journal |
Appl Surf Sci |
Volume |
102 |
Issue |
|
Pages |
173-177 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
In this work, photoelectric yield and electrical properties of several types of epitaxial erbium silicide on silicon Schottky diodes are studied, Different preparation conditions are used simultaneously on n- and p-Si(111) substrates for the 200 Angstrom thick silicide films. A last type of sample consists in 1.3 monolayer of epitaxial silicide with root 3 X root 3 superstructure on the Si substrate and covered by silver on the top. Photocurrent measurements are done as a function of photon energy at several temperatures. All these samples show barrier heights near 1 eV on p-type Si, even for the interface comprising only 1.3 monolayer of silicide whereas barrier heights on n-rype Si span the range from 0.28 to 0.67 eV for this last kind of sample, the sum of the barriers always exceeding the silicon band gap, These photoelectric results are confirmed by electrical characterisations, All these results show that the Fermi level is pinned 0.1 eV below the conduction band edge on p-type Si but shifts to various positions lower within the band gap on n-type Si. This fact leads to the hypothesis of a density of -7 interface states close to the charge change in the Si depletion zone from p- to n-type, namely 10(12) eV(-1) cm(-2). Although some inhomogeneities and defects at the interface are detected by electron microscopy for samples annealed at 750 degrees C, Fermi level position seems rather insensitive to the structural details of the interface while the silicide thickness plays a role on n-type Si. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1996VJ86100039 |
Publication Date |
2003-05-12 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0169-4332; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.711 |
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:104392 |
Serial |
2611 |
Permanent link to this record |
|
|
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R. |
Title |
A temperature study of mixed AgBr-AgBrI tabular crystals |
Type |
H1 Book chapter |
Year |
1995 |
Publication |
|
Abbreviated Journal |
|
Volume |
|
Issue |
|
Pages |
70-76 |
Keywords |
H1 Book chapter; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Hawaii |
Editor |
|
Language |
|
Wos |
A1995RY19900011 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
39 |
Series Issue |
1 |
Edition |
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
3 |
Open Access |
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
Call Number |
UA @ lucian @ c:irua:8459 |
Serial |
3501 |
Permanent link to this record |
|
|
|
Author |
Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. |
Title |
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ |
Type |
A1 Journal article |
Year |
1996 |
Publication |
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms
T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France |
Abbreviated Journal |
Nucl Instrum Meth B |
Volume |
120 |
Issue |
1-4 |
Pages |
186-189 |
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
Abstract |
6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Elsevier |
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1996VZ24500040 |
Publication Date |
2002-07-26 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0168-583X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
1.124 |
Times cited |
2 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:95882 |
Serial |
947 |
Permanent link to this record |
|
|
|
Author |
Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. |
Title |
Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization |
Type |
A1 Journal article |
Year |
2000 |
Publication |
Materials science forum
T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA |
Abbreviated Journal |
Mater Sci Forum |
Volume |
338-3 |
Issue |
|
Pages |
309-312 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
Trans tech publications ltd |
Place of Publication |
Zurich-uetikon |
Editor |
|
Language |
|
Wos |
000165996700075 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0255-5476 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
2 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:104262 |
Serial |
1071 |
Permanent link to this record |
|
|
|
Author |
Teodorescu, V.S.; Mihailescu, I.N.; Dinescu, M.; Chitica, N.; Nistor, L.C.; van Landuyt, J.; Barborica, A. |
Title |
Laser induced phase transition in iron thin films |
Type |
A1 Journal article |
Year |
1994 |
Publication |
Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation |
Abbreviated Journal |
|
Volume |
4 |
Issue |
|
Pages |
127-130 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Les Ulis |
Editor |
|
Language |
|
Wos |
A1994NT08700028 |
Publication Date |
2007-07-16 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1155-4339; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
2 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:10003 |
Serial |
1787 |
Permanent link to this record |
|
|
|
Author |
Zhang, X.F.; Zhang, X.B.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J.; Werner, H. |
Title |
A simple preparation method for air-sensitive specimens for transmission electron microscopy demonstrated by Rb6C60 |
Type |
A1 Journal article |
Year |
1994 |
Publication |
Ultramicroscopy |
Abbreviated Journal |
Ultramicroscopy |
Volume |
55 |
Issue |
|
Pages |
25-30 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
In this paper a particularly simple but efficient method is presented by which samples of alkali-doped C-60 materials or other air-sensitive materials can be prepared and transferred into a transmission electron microscope for direct observations and investigations. Flexible, transparent glove bags are used which are filled to a slight overpressure with dry nitrogen. Under this protective atmosphere, the air-sensitive sample is mounted in the specimen holder and inserted in the vacuum of the electron microscope. Rb6C60 which is prepared and transferred into the microscope in this way has been investigated by transmission electron microscopy (TEM). The results confirm the bcc structure and especially the location of the rubidium atoms. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Amsterdam |
Editor |
|
Language |
|
Wos |
A1994PE30800005 |
Publication Date |
2002-10-18 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0304-3991; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.436 |
Times cited |
2 |
Open Access |
|
Notes |
|
Approved |
CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 # |
Call Number |
UA @ lucian @ c:irua:10007 |
Serial |
3002 |
Permanent link to this record |
|
|
|
Author |
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.; Dinescu, M. |
Title |
TEM study of laser induced phase transition in iron thin films |
Type |
A1 Journal article |
Year |
1994 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
Volume |
29 |
Issue |
1 |
Pages |
63-71 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
Laser induced phase transition from b.c.c.(alpha) to f.c.c.(gamma) iron thin films is studied by high resolution TEM. The iron film has been covered on both sides with carbon layers to protect it against oxidation. Single pulse, tau FWHM = 20ns KrF (lambda = 248nm) excimer laser irradiation was performed in air with the film on the substrate. The laser pulse acts like a heat pulse followed by a rapid quenching revealing sequential aspects of the phase transition process. The presence of a fine mixture of the alpha + gamma phases between the alpha and gamma regions of the film has been interpreted as an incomplet transformation. The results are explained by assuming that the transformation took place via a phonon drag mechanism. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
Language |
|
Wos |
A1994ML03000008 |
Publication Date |
2003-06-21 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0025-5408; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.288 |
Times cited |
2 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:99945 |
Serial |
3488 |
Permanent link to this record |
|
|
|
Author |
Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. |
Title |
The study of high Tc-superconducting materials by electron microscopy and electron diffraction |
Type |
A1 Journal article |
Year |
1991 |
Publication |
Superconductor science and technology
T2 – SATELLITE CONF TO THE 19TH INTERNATIONAL CONF ON LOW TEMPERATURE PHYSICS : HIGH TEMPERATURE SUPERCONDUCTIVITY, AUG 13-15, 1990, QUEENS COLL, CAMBRIDGE, ENGLAND |
Abbreviated Journal |
Supercond Sci Tech |
Volume |
4 |
Issue |
s:[1] |
Pages |
S19-S34 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
A survey is given of the application of different electron microscopic techniques to the study of structural features of high T(c)-superconducting materials. Emphasis is laid in this contribution on those structural aspects for the study of which electron microscopy has been essential or has contributed to a significant extent. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Bristol |
Editor |
|
Language |
|
Wos |
A1991FA42000004 |
Publication Date |
2002-08-25 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0953-2048;1361-6668; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.325 |
Times cited |
2 |
Open Access |
|
Notes |
|
Approved |
PHYSICS, APPLIED 47/145 Q2 # |
Call Number |
UA @ lucian @ c:irua:104503 |
Serial |
3596 |
Permanent link to this record |
|
|
|
Author |
Volkov, V.V.; van Heurck, C.; van Landuyt, J.; Amelinckx, S.; Zhukov, E.G.; Polulyak, E.S.; Novotortsev, V.M. |
Title |
Electron microscopy and X-ray study of the growth of FeCr2S4 spinel single crystals by chemical vapour transport |
Type |
A1 Journal article |
Year |
1993 |
Publication |
Crystal research and technology |
Abbreviated Journal |
Cryst Res Technol |
Volume |
28 |
Issue |
8 |
Pages |
1051-1061 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
The growth features of FeCr2S4 spinel single crystals prepared by chemical vapour transport were studied by means of scanning electron microscopy, transmission electron microscopy, high resolution electron microscopy, electron diffraction and X-ray analysis. Our results indicate that the epitaxial growth of the new phases FeCr7S12 and FeCr8S12, both based on the NiAs structure, can essentially inhibit the growth of large FeCr2S4 spinel single crystals in the octahedral habit. The new phases are fully characterised and the effects of defect ordering in these new phases are also reported. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Berlin |
Editor |
|
Language |
|
Wos |
A1993MN86700003 |
Publication Date |
2007-01-13 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0232-1300;1521-4079; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
0.935 |
Times cited |
1 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:6788 |
Serial |
952 |
Permanent link to this record |
|
|
|
Author |
Schryvers, D.; van Landuyt, J.T. |
Title |
Electron microscopy study of twin sequences and branching in Ni66Al34 3r martensite |
Type |
P1 Proceeding |
Year |
1993 |
Publication |
Proceedings Of The International Conference On Martensitic Transformations (icomat-92) |
Abbreviated Journal |
|
Volume |
|
Issue |
|
Pages |
263-268 |
Keywords |
P1 Proceeding; Engineering sciences. Technology; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Wos |
A1993BD05K00039 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
1 |
Open Access |
|
Notes |
|
Approved |
no |
Call Number |
UA @ lucian @ c:irua:104492 |
Serial |
975 |
Permanent link to this record |
|
|
|
Author |
Volkov, V.V.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S.; Busheva, E.E.; Shabunina, G.G.; Aminov, T.G.; Novotortsev, V.M. |
Title |
HREM image analysis up to structure determination of SbCrSe3: a new 1D ferromagnet |
Type |
A1 Journal article |
Year |
1997 |
Publication |
Journal of solid state chemistry |
Abbreviated Journal |
J Solid State Chem |
Volume |
132 |
Issue |
|
Pages |
257-266 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
London |
Editor |
|
Language |
|
Wos |
A1997YE01700005 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0022-4596 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
2.299 |
Times cited |
1 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 2.299; 1997 IF: 1.486 |
Call Number |
UA @ lucian @ c:irua:21421 |
Serial |
1500 |
Permanent link to this record |
|
|
|
Author |
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J. |
Title |
In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure |
Type |
A1 Journal article |
Year |
1997 |
Publication |
Conference series of the Institute of Physics |
Abbreviated Journal |
|
Volume |
157 |
Issue |
|
Pages |
55-58 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
London |
Editor |
|
Language |
|
Wos |
000071954600008 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0305-2346 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
1 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:21432 |
Serial |
1578 |
Permanent link to this record |
|
|
|
Author |
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
Title |
Morphology and defects in shallow trench isolation structures |
Type |
A1 Journal article |
Year |
1999 |
Publication |
Conference series of the Institute of Physics |
Abbreviated Journal |
|
Volume |
164 |
Issue |
|
Pages |
443-446 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
London |
Editor |
|
Language |
|
Wos |
000166835300094 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0305-2346 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
|
Times cited |
1 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: NA |
Call Number |
UA @ lucian @ c:irua:29690 |
Serial |
2206 |
Permanent link to this record |
|
|
|
Author |
Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. |
Title |
New method to determine the parity of the number of twin planes in tabular silver halide microcrystals from top views |
Type |
A1 Journal article |
Year |
1997 |
Publication |
The journal of imaging science and technology |
Abbreviated Journal |
J Imaging Sci Techn |
Volume |
41 |
Issue |
|
Pages |
301-307 |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
Springfield, Va |
Editor |
|
Language |
|
Wos |
000077457600017 |
Publication Date |
0000-00-00 |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1062-3701 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
Impact Factor |
0.348 |
Times cited |
1 |
Open Access |
|
Notes |
|
Approved |
Most recent IF: 0.348; 1997 IF: NA |
Call Number |
UA @ lucian @ c:irua:21346 |
Serial |
2324 |
Permanent link to this record |