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  Author Title Year Publication Volume Times cited (up) Additional Links Links
Fedina, L.; Lebedev, O.I.; Van Tendeloo, G.; van Landuyt, J. In-situ HREM irradiation study of point defect clustering in strained GexSi1-x/(001)Si heterostructure 1997 Conference series of the Institute of Physics 157 1 UA library record; WoS full record; WoS citing articles
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. Morphology and defects in shallow trench isolation structures 1999 Conference series of the Institute of Physics 164 1 UA library record; WoS full record; WoS citing articles
Goessens, C.; Schryvers, D.; van Landuyt, J.; de Keyzer, R. New method to determine the parity of the number of twin planes in tabular silver halide microcrystals from top views 1997 The journal of imaging science and technology 41 1 UA library record; WoS full record; WoS citing articles
Fedina, L.; van Landuyt, J.; Vanhellemont, J.; Aseev, A. Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope 1996 Materials Research Society symposium proceedings 404 1 UA library record; WoS full record; WoS citing articles
De Meulenaere, P.; Van Tendeloo, G.; van Landuyt, J.; Mommaert, C.; Severne, G. Radiation defects and ordered radiation patterns in Ni and Ni4Mo: a study by electron microscopy 1993 Philosophical magazine: A: physics of condensed matter: defects and mechanical properties 67 1 UA library record; https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993; WoS full record; WoS citing articles pdf doi
Schryvers, D.; Van Tendeloo, G.; van Landuyt, J.; Amelinckx, S. Some examples of electron microscopy studies of microstructures and phase transitions in solids 1995 Meccanica 30 1 UA library record; WoS full record; WoS citing articles doi
Frangis, N.; van Landuyt, J.; Grimaldi, M.G.; Calcagno, L. Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with He+ 1996 Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms T2 – Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France 120 2 UA library record; WoS full record; WoS citing articles doi
Romano-Rodriguez, A.; Perez-Rodriguez, A.; Serre, C.; van Landuyt, J.; et al. Epitaxial growth of \beta-SiC on ion-beam synthesized \beta-SiC : structural characterization 2000 Materials science forum T2 – International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA 338-3 2 UA library record; WoS full record; WoS citing articles
Teodorescu, V.S.; Mihailescu, I.N.; Dinescu, M.; Chitica, N.; Nistor, L.C.; van Landuyt, J.; Barborica, A. Laser induced phase transition in iron thin films 1994 Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation 4 2 UA library record; WoS full record; WoS citing articles doi
Zhang, X.F.; Zhang, X.B.; Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; van Landuyt, J.; Werner, H. A simple preparation method for air-sensitive specimens for transmission electron microscopy demonstrated by Rb6C60 1994 Ultramicroscopy 55 2 UA library record; WoS full record; WoS citing articles pdf doi
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J.; Dinescu, M. TEM study of laser induced phase transition in iron thin films 1994 Materials research bulletin 29 2 UA library record; WoS full record; WoS citing articles pdf doi
Amelinckx, S.; Van Tendeloo, G.; van Landuyt, J. The study of high Tc-superconducting materials by electron microscopy and electron diffraction 1991 Superconductor science and technology T2 – SATELLITE CONF TO THE 19TH INTERNATIONAL CONF ON LOW TEMPERATURE PHYSICS : HIGH TEMPERATURE SUPERCONDUCTIVITY, AUG 13-15, 1990, QUEENS COLL, CAMBRIDGE, ENGLAND 4 2 UA library record; WoS full record; WoS citing articles pdf doi
de Gryse, O.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Vanhellemont, J.; Claeys, C.; Simoen, E. Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM 2001 Physica: B : condensed matter T2 – 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY 308 3 UA library record; WoS full record; WoS citing articles pdf doi
Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Pervov, V.S.; Makhonina, E.V. Electron microscopic and X-ray structural analysis of the layered crystals TaReSe4: structure, defect structure, and microstructure, including rotation twins 1998 Journal of solid state chemistry 135 3 UA library record; WoS full record; WoS citing articles pdf doi
Luyten, W.; Volkov, V.V.; van Landuyt, J.; Amelinckx, S.; Férauge, C.; Gijbels, R.; Vasilev, M.G.; Shelyakin, A.A.; Lazarev, V.B. Electron microscopy and mass-spectrometry study of In0.72Ga0.28As0.62P0.38 lasers grown by liquid phase epitaxy 1993 Physica status solidi: A: applied research 140 3 UA library record; WoS full record; WoS citing articles doi
Teodorescu, V.S.; Nistor, L.C.; van Landuyt, J. High resolution TEM observation of in situ colloid formation in CaF2 crystals 1997 Materials science forum 239-241 3 UA library record; WoS full record; WoS citing articles
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. Interaction of a Ti-capped Co thin film with Si3N4 2000 Applied physics letters 77 3 UA library record; WoS full record; WoS citing articles pdf doi
Volkov, V.V.; van Landuyt, J.; Marushkin, K.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. LPE growth and characterization of InGaAsP/InP heterostructures: IR-emitting diodes at 1.66 μm: application to the remote monitoring of methane gas 1997 Sensors and actuators : A : physical 62 3 UA library record; WoS full record; WoS citing articles pdf doi
Morimura, T.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Hasaka, M.; Hisatsune, K. Microstructure of Mn-doped, spin-cast FeSi2 1997 Journal of electron microscopy 46 3 UA library record; WoS full record; WoS citing articles
Ignatova, V.A.; Lebedev, O.I.; Wätjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. Observation of Sb203 nanocrystals in SiO2 after Sb ion implantation 2002 Microchimica acta 139 3 UA library record; WoS full record; WoS citing articles doi
Simoen, E.; Loo, R.; Claeys, C.; de Gryse, O.; Clauws, P.; van Landuyt, J.; Lebedev, O. Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon 2002 Journal of physics : condensed matter T2 – Conference on Extended Defects in Semiconductors (EDS 2002), JUN 01-06, 2002, BOLOGNA, ITALY 14 3 UA library record; WoS full record; WoS citing articles pdf url doi
Muret, P.; Nguyen, T.T.A.; Frangis, N.; Van Tendeloo, G.; van Landuyt, J. Photoelectric and electrical responses of several erbium silicide/silicon interfaces 1996 Applied surface science T2 – International Symposium on Si Heterostructures – From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE 102 3 UA library record; WoS full record; WoS citing articles pdf doi
Goessens, C.; Schryvers, D.; van Landuyt, J.; Geuens, I.; Gijbels, R.; Jacob, W.; de Keyzer, R. A temperature study of mixed AgBr-AgBrI tabular crystals 1995 3 UA library record; WoS full record; WoS citing articles
Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. A 2a2b3c superstructure in hexagonal NiS1-x: a study by means of electron diffraction and HREM 1993 Journal of crystal growth 126 4 UA library record; WoS full record; WoS citing articles
Lioutas, C.B.; Manolikas, C.; Van Tendeloo, G.; van Landuyt, J. A 2a2a3c superstructure in hexagonal Ni1-xS : a study by means of electron-diffraction and HRTEM 1993 Journal of crystal growth 126 4 UA library record; WoS full record; WoS citing articles pdf doi
de Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; van Landuyt, J.; Simoen, E.; Claeys, C. A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon 2003 Physica: B : condensed matter T2 – 22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK 340 4 UA library record; WoS full record; WoS citing articles doi
Volkov, V.V.; van Landuyt, J.; Marushkin, K.M.; Gijbels, R.; Férauge, C.; Vasilyev, M.G.; Shelyakin, A.A.; Sokolovsky, A.A. Characterization of LPE grown InGaAsP/InP heterostructures: IR-LED at 1.66 μm used for the remote monitoring of methane gas 1997 Journal of crystal growth 173 4 UA library record; WoS full record; WoS citing articles
Buschmann, V.; Schryvers, D.; van Landuyt, J.; van Roost, C.; de Keyzer, R. A comparative investigation of replication techniques used for the study of (S+Au) sensitized AgBr microcrystals 1996 The journal of imaging science and technology 40 4 UA library record; WoS full record; WoS citing articles
Deveirman, A.; van Landuyt, J.; Vanhellemont, J.; Maes, H.E.; Yallup, K. Defects in high-dose oxygen implanted silicon : a TEM study 1991 Vacuum: the international journal and abstracting service for vacuum science and technology T2 – 1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND 42 4 UA library record; WoS full record; WoS citing articles pdf doi
Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates 2001 Journal of materials research 16 4 UA library record; WoS full record; WoS citing articles doi
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