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Author |
Sarmadian, N.; Saniz, R.; Partoens, B.; Lamoen, D. |
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Title |
Easily doped p-type, low hole effective mass, transparent oxides |
Type |
A1 Journal article |
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Year |
2016 |
Publication |
Scientific reports |
Abbreviated Journal |
Sci Rep-Uk |
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Volume |
6 |
Issue |
6 |
Pages |
20446 |
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Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT) |
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Abstract |
Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications – i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron rest mass, and good p-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Na impurities substituting La are shallow acceptors in moderate to strong anion-rich growth conditions, with low formation energy, and that they will not be compensated by anion vacancies VO or VSe. |
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Address |
EMAT, Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium |
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Language |
English |
Wos |
000369568900001 |
Publication Date |
2016-02-08 |
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Edition |
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ISSN |
2045-2322 |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
4.259 |
Times cited  |
55 |
Open Access |
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Notes |
We acknowledge the financial support of FWO-Vlaanderen through project G.0150.13 and of a GOA fund from the University of Antwerp. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center) and the HPC infrastructure of the University of Antwerp (CalcUA), both funded by the Hercules Foundation and the Flemish Government–department EWI. |
Approved |
Most recent IF: 4.259 |
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Call Number |
c:irua:131611 |
Serial |
4036 |
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Author |
Shuhui Sun, Gaixia Zhang, Nicolas Gauquelin, Ning Chen, Jigang Zhou, Songlan Yang, Weifeng Chen, Xiangbo Meng, Dongsheng Geng, Mohammad N. Banis, Ruying Li, Siyu Ye, Shanna Knights, Gianluigi A. Botton, Tsun-Kong Sham & Xueliang Sun |
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Title |
Single-atom Catalysis Using Pt/Graphene Achieved through Atomic Layer Deposition |
Type |
A1 Journal Article |
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Year |
2013 |
Publication |
Scientific Reports |
Abbreviated Journal |
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Volume |
3 |
Issue |
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Pages |
1775 |
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Keywords |
A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ; |
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Abstract |
Platinum-nanoparticle-based catalysts are widely used in many important chemical processes and
automobile industries. Downsizing catalyst nanoparticles to single atoms is highly desirable to maximize
their use efficiency, however, very challenging. Here we report a practical synthesis for isolated single Pt
atoms anchored to graphene nanosheet using the atomic layer deposition (ALD) technique. ALD offers the
capability of precise control of catalyst size span from single atom, subnanometer cluster to nanoparticle.
The single-atom catalysts exhibit significantly improved catalytic activity (up to 10 times) over that of the
state-of-the-art commercial Pt/C catalyst. X-ray absorption fine structure (XAFS) analyses reveal that the
low-coordination and partially unoccupied densities of states of 5d orbital of Pt atoms are responsible for the
excellent performance. This work is anticipated to form the basis for the exploration of a next generation of
highly efficient single-atom catalysts for various applications. |
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Wos |
000318334300004 |
Publication Date |
2013-05-03 |
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Impact Factor |
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Times cited |
345 |
Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
EMAT @ emat @ |
Serial |
4543 |
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