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Author Sarmadian, N.; Saniz, R.; Partoens, B.; Lamoen, D.
Title Easily doped p-type, low hole effective mass, transparent oxides Type A1 Journal article
Year 2016 Publication Scientific reports Abbreviated Journal Sci Rep-Uk
Volume 6 Issue 6 Pages 20446
Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Abstract Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications – i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron rest mass, and good p-type dopability. Furthermore, for La2SeO2 it is explicitly shown that Na impurities substituting La are shallow acceptors in moderate to strong anion-rich growth conditions, with low formation energy, and that they will not be compensated by anion vacancies VO or VSe.
Address EMAT, Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
Corporate Author Thesis
Publisher Place of Publication Editor
Language English Wos 000369568900001 Publication Date 2016-02-08
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2045-2322 ISBN Additional Links UA library record; WoS full record; WoS citing articles
Impact Factor 4.259 Times cited (up) 55 Open Access
Notes We acknowledge the financial support of FWO-Vlaanderen through project G.0150.13 and of a GOA fund from the University of Antwerp. The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center) and the HPC infrastructure of the University of Antwerp (CalcUA), both funded by the Hercules Foundation and the Flemish Government–department EWI. Approved Most recent IF: 4.259
Call Number c:irua:131611 Serial 4036
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Author Shuhui Sun, Gaixia Zhang, Nicolas Gauquelin, Ning Chen, Jigang Zhou, Songlan Yang, Weifeng Chen, Xiangbo Meng, Dongsheng Geng, Mohammad N. Banis, Ruying Li, Siyu Ye, Shanna Knights, Gianluigi A. Botton, Tsun-Kong Sham & Xueliang Sun
Title Single-atom Catalysis Using Pt/Graphene Achieved through Atomic Layer Deposition Type A1 Journal Article
Year 2013 Publication Scientific Reports Abbreviated Journal
Volume 3 Issue Pages 1775
Keywords A1 Journal Article; Electron Microscopy for Materials Science (EMAT) ;
Abstract Platinum-nanoparticle-based catalysts are widely used in many important chemical processes and

automobile industries. Downsizing catalyst nanoparticles to single atoms is highly desirable to maximize

their use efficiency, however, very challenging. Here we report a practical synthesis for isolated single Pt

atoms anchored to graphene nanosheet using the atomic layer deposition (ALD) technique. ALD offers the

capability of precise control of catalyst size span from single atom, subnanometer cluster to nanoparticle.

The single-atom catalysts exhibit significantly improved catalytic activity (up to 10 times) over that of the

state-of-the-art commercial Pt/C catalyst. X-ray absorption fine structure (XAFS) analyses reveal that the

low-coordination and partially unoccupied densities of states of 5d orbital of Pt atoms are responsible for the

excellent performance. This work is anticipated to form the basis for the exploration of a next generation of

highly efficient single-atom catalysts for various applications.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Wos 000318334300004 Publication Date 2013-05-03
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Additional Links
Impact Factor Times cited (up) 345 Open Access
Notes Approved Most recent IF: NA
Call Number EMAT @ emat @ Serial 4543
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