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FIB/SEM applied to quantitative 3D analysis of precipitates in Ni-Ti”. Cao S, Nishida M, Schryvers D, Diffusion and defect data : solid state data : part B : solid state phenomena 172/174, 1284 (2011). http://doi.org/10.4028/www.scientific.net/SSP.172-174.1284
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Fine structure of CMR perovskites by HREM and CBEM”. Van Tendeloo G, Richard O, Schuddinck W, Hervieu M, Electron microscopy: vol. 1 , 383 (1998)
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First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs”. Rosenauer A, Schowalter M, Glas F, Lamoen D, 107, 151 (2005)
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From the lattice measurements of the austenite and the martensite cells to the macroscopic mechanical behavior of shape memory alloys”. Lexcellent C, Vivet A, Bouvet C, Blanc P, Satto C, Schryvers D, Journal de physique: 4 11, 317 (2001)
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HREM imaging analysis in the study of pretransition and nucleation phenomena in alloys (Invited)”. Schryvers D, Van Tendeloo G, van Landuyt J, Le Tanner, , 659 (1994)
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HREM investigation of a Fe/GaN/Fe tunnel junction”. Nistor L, Bender H, van Landuyt J, Nemeth S, Boeve H, De Boeck J, Borghs G, Institute of physics conference series T2 –, Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England , 53 (2001)
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HREM investigation of La(1-x)Ca(x)MnO3-delta thin films”. Lebedev O, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier HU, , 517 (1998)
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HREM investigation of La1-xCaxMnO3- thin films”. Lebedev OI, Van Tendeloo G, Amelinckx S, Leibold B, Habermeier H-U, Electron microscopy: vol. 2 , 517 (1998)
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HREM of defects in cubic boron nitride single crystals”. Nistor LC, van Landuyt J, Dincã, G, , 695 (1998)
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HREM study of Rb6C60 and helical shaped carbon nanotubules”. Bernaerts D, Zhang X, Zhang X, Van Tendeloo G, Vanlanduyt J, Amelinckx S, Sciences , 305 (1994)
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Imaging from atomic structure to electronic structure”. Xu Q, Zandbergen HW, van Dyck D, Micron 43, 524 (2012). http://doi.org/10.1016/j.micron.2011.10.024
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The influence of crystal thickness on the image tone”. van Renterghem W, Schryvers D, van Landuyt J, van Roost C, de Keyzer R, Journal of imaging science 47, 133 (2003)
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Influence of the characteristics of the STM-tip on the electroluminescence spectra”. Croitoru MD, Gladilin VN, Fomin VM, Devreese JT, Kemerink M, Koenraad PM, Sauthoff K, Wolter JH, Physica. E: Low-dimensional systems and nanostructures 27, 13 (2005). http://doi.org/10.1016/j.physe.2004.10.002
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Influence of twinning on the morphology of AgBr and AgCl microcrystals”. van Renterghem W, Goessens C, Schryvers D, van Landuyt J, Bollen D, de Keyzer R, van Roost C, The journal of imaging science and technology 45, 349 (2001)
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Laser thermotreatment of the SnO2layers”. Rembeza SI, Loginov VA, Svistova TV, Podkopaeva OI, Rembeza ES, van Landuyt J, Eurosensors XII, vols 1 and 2 , 481 (1998)
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Layered structures accomodating stoichiometry in M2X2O7 systems, as seen by diffraction and HREM”. Nihoul G, Leroux C, Cesari C, Van Tendeloo G, Electron microscopy: vol. 2 , 295 (1998)
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The local structure of YBCO based materials by TEM”. Van Tendeloo G, Lebedev OI, Verbist K, Abakumov AM, Shpanchenko RV, Antipov EV, Blank DHA Kluwer Academic, Dordrecht, page 11 (1999).
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Loss rate of a plasticizer in a nylon matrix calculated using macroscopic reaction-diffusion kinetics”. Zhang M-L, March NH, Peeters A, van Alsenoy C, Howard I, Lamoen D, Leys F, Journal Of Applied Physics 93, 1525 (2003). http://doi.org/10.1063/1.1535230
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Measurement of the mean inner potential of ZnO nanorods by transmission electron holography”. Müller E, Kruse P, Gerthsen D, Schowalter M, Rosenauer A, Lamoen D, Kling R, Microscopy of Semiconducting Materials 107SPRINGER PROCEEDINGS IN PHYSICS, 303 (2005)
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Mécanismes de la non-stoechiométrie dans les nouveaux supraconducteurs à, haute Tc”. Hervieu M, Michel C, Martin C, Huvé, M, Van Tendeloo G, Maignan A, Pelloquin D, Goutenoire F, Raveau B, Journal de physique: 3: applied physics, materials science, fluids, plasma and instrumentation 4, 2057 (1994)
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Microstructural investigation of a La1.9Sr0.1CuO4 thin film grown by MBE under a large compressive strain”. Seo JW, Perret J, Fompeyrine J, Loquet J-P, Van Tendeloo G, Electron microscopy: vol. 2 , 287 (1998)
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Microstructural investigation of La1.9Sr0.1CuO4 thin film grown by MBE”. Seo JW, Perret J, Fompeyrine J, Van Tendeloo G, Loquet J-P s.l., page 300 (1998).
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Microstructural mechanism of development in photothermographic materials”. Potapov PL, Schryvers D, Strijckers H, van Roost C, The journal of imaging science and technology 47, 115 (2003)
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A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films”. Nistor LC, Richard O, Zhao O, Bender H, Stesmans A, Van Tendeloo G, Institute of physics conference series T2 –, Microscopy of semiconducting materials , 397 (2003)
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Microstructure of α-axis oriented YBCO films on SrTiO3 substrates using a new template layer La4BaCu5O13”. Prouteau C, Verbist K, Hamet JF, Mercey B, Hervieu M, Raveau B, Van Tendeloo G, Physica: C : superconductivity 288, 231 (1997)
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Microstructure of artificial [100] 45 degrees twist grain boundaries in YBa2Cu3O7-delta”. Verbist K, Tafuri F, Granozio FM, Di Chiara S, Van Tendeloo G, Electron Microscopy 1998, Vol 2: Materials Science 1 , 593 (1998)
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Microstructure of artificial [100] 45°, twist grain boundaries in YBa2Cu3O7-”. Verbist K, Tafuri F, Miletto Granozio F, di Chiara S, Van Tendeloo G, Electron microscopy: vol. 2 , 593 (1998)
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Microstructure of CuXMo6S8 Chevrel phase thin films on R-plane sapphire”. Richard O, Van Tendeloo G, Lemée N, le Lannic J, Guilloux-Viry M, Perrin A, Journal of electron microscopy 49, 493 (2000). http://doi.org/10.1093/oxfordjournals.jmicro.a023834
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Microstructure of YBa2Cu3O7-\delta Josephson junctions in relation to their properties”. Verbist K, Lebedev OI, Verhoeven MAJ, Winchern R, Rijnders AJHM, Blank DHA, Tafuri F, Bender H, Van Tendeloo G, Superconductor science and technology 11, 13 (1998). http://doi.org/10.1088/0953-2048/11/1/004
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Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1-xInxAs/GaAs quantum wells”. Titantah JT, Lamoen D, Schowalter M, Rosenauer A, Journal of applied physics 105, 084310 (2009). http://doi.org/10.1063/1.3115407
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